CN110709967B - 改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法 - Google Patents

改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法 Download PDF

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CN110709967B
CN110709967B CN201880036516.8A CN201880036516A CN110709967B CN 110709967 B CN110709967 B CN 110709967B CN 201880036516 A CN201880036516 A CN 201880036516A CN 110709967 B CN110709967 B CN 110709967B
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substrate
amorphous silicon
layer
patterned features
implementations
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CN110709967A (zh
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程睿
Y·杨
陈一宏
K·嘉纳基拉曼
A·B·玛里克
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Applied Materials Inc
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201880036516.8A 2017-07-24 2018-05-24 改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法 Active CN110709967B (zh)

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US201762536275P 2017-07-24 2017-07-24
US62/536,275 2017-07-24
PCT/US2018/034439 WO2019022826A1 (en) 2017-07-24 2018-05-24 PRETREATMENT APPARATUS FOR IMPROVING THE CONTINUITY OF ULTRA-THIN AMORPHOUS SILICON FILM ON SILICON OXIDE

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KR20190035036A (ko) * 2017-09-25 2019-04-03 삼성전자주식회사 박막 형성 장치 및 이를 이용한 비정질 실리콘 막 형성방법
US11315787B2 (en) * 2019-04-17 2022-04-26 Applied Materials, Inc. Multiple spacer patterning schemes
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
US11198606B2 (en) * 2019-09-23 2021-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
CN112645277B (zh) * 2020-12-11 2023-11-07 上海集成电路研发中心有限公司 一种新型红外探测器及制备方法
US11640905B2 (en) * 2020-12-17 2023-05-02 Applied Materials, Inc. Plasma enhanced deposition of silicon-containing films at low temperature
CN112599619A (zh) * 2020-12-29 2021-04-02 成都晔凡科技有限公司 制造太阳能电池片的方法和太阳能电池片
KR20240032126A (ko) 2021-07-09 2024-03-08 램 리써치 코포레이션 실리콘-함유 막들의 플라즈마 강화 원자 층 증착
KR20240046605A (ko) * 2021-08-24 2024-04-09 램 리써치 코포레이션 멀티-패터닝에서 인-시츄 코어 보호
TW202419657A (zh) * 2022-07-20 2024-05-16 美商應用材料股份有限公司 共形鉬沉積
CN120153457A (zh) * 2022-09-06 2025-06-13 朗姆研究公司 掺杂硅或硼层的形成
US20250112039A1 (en) * 2023-10-03 2025-04-03 Applied Materials, Inc. Seam-free single operation amorphous silicon gap fill

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