CN110622320B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110622320B
CN110622320B CN201880019440.8A CN201880019440A CN110622320B CN 110622320 B CN110622320 B CN 110622320B CN 201880019440 A CN201880019440 A CN 201880019440A CN 110622320 B CN110622320 B CN 110622320B
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CN
China
Prior art keywords
range
surface electrode
semiconductor device
body region
semiconductor substrate
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CN201880019440.8A
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English (en)
Chinese (zh)
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CN110622320A (zh
Inventor
永冈达司
山下侑佑
浦上泰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
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Denso Corp
Toyota Motor Corp
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Publication of CN110622320A publication Critical patent/CN110622320A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/158—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201880019440.8A 2017-03-22 2018-01-26 半导体装置 Active CN110622320B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017055344A JP6666292B2 (ja) 2017-03-22 2017-03-22 半導体装置
JP2017-055344 2017-03-22
PCT/JP2018/002487 WO2018173477A1 (ja) 2017-03-22 2018-01-26 半導体装置

Publications (2)

Publication Number Publication Date
CN110622320A CN110622320A (zh) 2019-12-27
CN110622320B true CN110622320B (zh) 2023-08-08

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CN201880019440.8A Active CN110622320B (zh) 2017-03-22 2018-01-26 半导体装置

Country Status (4)

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US (1) US11393902B2 (enExample)
JP (1) JP6666292B2 (enExample)
CN (1) CN110622320B (enExample)
WO (1) WO2018173477A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018133433B4 (de) * 2018-12-21 2023-07-06 Infineon Technologies Ag Siliziumcarbid-Körper enthaltende Halbleitervorrichtung und Herstellungsverfahren
JP7103435B2 (ja) * 2018-12-21 2022-07-20 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2021005692A (ja) * 2019-06-27 2021-01-14 株式会社デンソー 半導体装置
JP7256771B2 (ja) * 2020-03-16 2023-04-12 株式会社東芝 半導体装置
JP7381424B2 (ja) * 2020-09-10 2023-11-15 株式会社東芝 半導体装置
JP7614896B2 (ja) * 2021-03-19 2025-01-16 株式会社東芝 半導体装置及びその製造方法
CN117581383A (zh) * 2021-07-20 2024-02-20 株式会社电装 半导体装置
WO2026134136A1 (ja) * 2024-12-16 2026-06-25 富士電機株式会社 半導体装置および製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101325198A (zh) * 2007-06-14 2008-12-17 株式会社电装 半导体器件
CN101552274A (zh) * 2004-06-30 2009-10-07 先进模拟科技公司 半导体器件及其制造处理方法
WO2012141121A1 (ja) * 2011-04-12 2012-10-18 ルネサスエレクトロニクス株式会社 半導体装置
CN105830217A (zh) * 2013-12-17 2016-08-03 丰田自动车株式会社 半导体装置
CN106463529A (zh) * 2014-04-28 2017-02-22 丰田自动车株式会社 半导体装置以及半导体装置的制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3916793B2 (ja) * 1999-03-15 2007-05-23 株式会社東芝 半導体装置
JP5045733B2 (ja) * 2008-12-24 2012-10-10 株式会社デンソー 半導体装置
JP5680299B2 (ja) 2009-12-25 2015-03-04 トヨタ自動車株式会社 半導体装置
MX2014002269A (es) * 2011-08-30 2014-04-25 Toyota Motor Co Ltd Dispositivo de semiconductor.
JP2014003095A (ja) * 2012-06-15 2014-01-09 Denso Corp 半導体装置
JP2014150113A (ja) * 2013-01-31 2014-08-21 Toyota Motor Corp 半導体装置及び半導体装置の製造方法
JP2014154849A (ja) * 2013-02-13 2014-08-25 Toshiba Corp 半導体装置
JP2014187080A (ja) * 2013-03-22 2014-10-02 Panasonic Corp 半導体素子、半導体装置及び複合モジュール
WO2016039071A1 (ja) * 2014-09-08 2016-03-17 富士電機株式会社 半導体装置及びその製造方法
JP6428503B2 (ja) * 2015-06-24 2018-11-28 株式会社デンソー 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101552274A (zh) * 2004-06-30 2009-10-07 先进模拟科技公司 半导体器件及其制造处理方法
CN101325198A (zh) * 2007-06-14 2008-12-17 株式会社电装 半导体器件
WO2012141121A1 (ja) * 2011-04-12 2012-10-18 ルネサスエレクトロニクス株式会社 半導体装置
CN105830217A (zh) * 2013-12-17 2016-08-03 丰田自动车株式会社 半导体装置
CN106463529A (zh) * 2014-04-28 2017-02-22 丰田自动车株式会社 半导体装置以及半导体装置的制造方法

Also Published As

Publication number Publication date
CN110622320A (zh) 2019-12-27
US11393902B2 (en) 2022-07-19
JP6666292B2 (ja) 2020-03-13
US20200043823A1 (en) 2020-02-06
JP2018160488A (ja) 2018-10-11
WO2018173477A1 (ja) 2018-09-27

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