CN110578172B - 使用硅碳化物晶种来生产大块硅碳化物的方法和器具 - Google Patents

使用硅碳化物晶种来生产大块硅碳化物的方法和器具 Download PDF

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CN110578172B
CN110578172B CN201910876001.5A CN201910876001A CN110578172B CN 110578172 B CN110578172 B CN 110578172B CN 201910876001 A CN201910876001 A CN 201910876001A CN 110578172 B CN110578172 B CN 110578172B
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silicon carbide
seed
crucible
microns
silicon
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CN110578172A (zh
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R·V·德切夫
P·萨坦纳日哈瓦
A·M·安德凯威
D·S·李特尔
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Gtat Co
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Physical Vapour Deposition (AREA)
CN201910876001.5A 2013-09-06 2014-09-05 使用硅碳化物晶种来生产大块硅碳化物的方法和器具 Active CN110578172B (zh)

Applications Claiming Priority (4)

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US201361874620P 2013-09-06 2013-09-06
US61/874,620 2013-09-06
CN201480049104.XA CN105518189B (zh) 2013-09-06 2014-09-05 使用硅碳化物晶种来生产大块硅碳化物的方法和器具
PCT/US2014/054274 WO2015035152A1 (en) 2013-09-06 2014-09-05 Method and apparatus for producing bulk silicon carbide using a silicon carbide seed

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US (2) US10793971B2 (enExample)
JP (1) JP6473455B2 (enExample)
KR (1) KR102245507B1 (enExample)
CN (2) CN110578172B (enExample)
DE (1) DE112014004088B4 (enExample)
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CN105518187B (zh) * 2013-09-06 2019-11-08 Gtat公司 生产大块硅碳化物的方法
CN105518190B (zh) * 2013-09-06 2021-08-27 Gtat公司 从硅碳化物先驱物来生产大块硅碳化物的方法和器具
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CN108468089B (zh) * 2018-05-16 2022-06-21 福建北电新材料科技有限公司 一种高效高温固化碳化硅籽晶的工艺
CN111074338B (zh) 2018-10-22 2022-09-20 赛尼克公司 具有保护膜的籽晶及其制备方法和附着方法、采用该籽晶的晶锭的制备方法
CN109234810A (zh) * 2018-10-31 2019-01-18 福建北电新材料科技有限公司 一种无需粘结籽晶的碳化硅单晶生长装置
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US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
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CN110453285A (zh) * 2019-09-09 2019-11-15 福建北电新材料科技有限公司 坩埚盖及坩埚
CN110872728B (zh) * 2019-11-28 2021-05-28 山东大学 一种简单、高效降低SiC单晶中碳包裹物的方法
CN110886014B (zh) * 2019-12-18 2021-07-27 福建北电新材料科技有限公司 晶体生长装置
CN111321472B (zh) * 2020-03-25 2022-02-22 哈尔滨科友半导体产业装备与技术研究院有限公司 AlN籽晶精确扩径的装置及方法
TWI811746B (zh) * 2020-07-27 2023-08-11 環球晶圓股份有限公司 碳化矽晶種及其製造方法、碳化矽晶體的製造方法
RU2770838C1 (ru) * 2021-05-04 2022-04-22 Юрий Николаевич Макаров СПОСОБ ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛОВ КАРБИДА КРЕМНИЯ С ПРОВОДИМОСТЬЮ n-ТИПА
CN117109301B (zh) * 2023-10-25 2023-12-22 山西第三代半导体技术创新中心有限公司 一种用于制备大孔径碳化硅粉料的坩埚结构
CN117431522B (zh) * 2023-10-26 2024-06-21 北京北方华创微电子装备有限公司 清洁装置、清洁腔室及其控制方法、半导体工艺设备

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TWI665343B (zh) 2019-07-11
JP2016534973A (ja) 2016-11-10
TWI647348B (zh) 2019-01-11
CN105518189B (zh) 2019-10-15
TW201522723A (zh) 2015-06-16
US10793971B2 (en) 2020-10-06
DE112014004088T5 (de) 2016-06-23
KR102245507B1 (ko) 2021-04-28
US20150068446A1 (en) 2015-03-12
US20210095392A1 (en) 2021-04-01
CN105518189A (zh) 2016-04-20
WO2015035152A1 (en) 2015-03-12
TW201920783A (zh) 2019-06-01
KR20160052685A (ko) 2016-05-12
US11421343B2 (en) 2022-08-23
CN110578172A (zh) 2019-12-17
DE112014004088B4 (de) 2026-05-13
JP6473455B2 (ja) 2019-02-20

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