TWI647348B - 使用矽碳化物晶種來生產大塊矽碳化物的方法和器具 - Google Patents

使用矽碳化物晶種來生產大塊矽碳化物的方法和器具 Download PDF

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Publication number
TWI647348B
TWI647348B TW103130960A TW103130960A TWI647348B TW I647348 B TWI647348 B TW I647348B TW 103130960 A TW103130960 A TW 103130960A TW 103130960 A TW103130960 A TW 103130960A TW I647348 B TWI647348 B TW I647348B
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Taiwan
Prior art keywords
silicon carbide
seed
crucible
item
patent application
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TW103130960A
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English (en)
Chinese (zh)
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TW201522723A (zh
Inventor
羅曼Ｖ 達拉奇夫
拉斯拉斯 聖斯拉夫恩
安卓瑞Ｍ 安德拉柯
大衛Ｓ 萊特爾
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美商Ｇｔａｔ公司
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Publication of TW201522723A publication Critical patent/TW201522723A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Physical Vapour Deposition (AREA)
TW103130960A 2013-09-06 2014-09-09 使用矽碳化物晶種來生產大塊矽碳化物的方法和器具 TWI647348B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361874620P 2013-09-06 2013-09-06
US61/874,620 2013-09-06

Publications (2)

Publication Number Publication Date
TW201522723A TW201522723A (zh) 2015-06-16
TWI647348B true TWI647348B (zh) 2019-01-11

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TW103130960A TWI647348B (zh) 2013-09-06 2014-09-09 使用矽碳化物晶種來生產大塊矽碳化物的方法和器具
TW107144169A TWI665343B (zh) 2013-09-06 2014-09-09 使用矽碳化物晶種來生產大塊矽碳化物的方法和器具

Family Applications After (1)

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Country Status (7)

Country Link
US (2) US10793971B2 (enExample)
JP (1) JP6473455B2 (enExample)
KR (1) KR102245507B1 (enExample)
CN (2) CN110578172B (enExample)
DE (1) DE112014004088B4 (enExample)
TW (2) TWI647348B (enExample)
WO (1) WO2015035152A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6473455B2 (ja) * 2013-09-06 2019-02-20 ジーティーエイティー コーポレーションＧｔａｔ Ｃｏｒｐｏｒａｔｉｏｎ 炭化ケイ素シードを用いたバルクの炭化ケイ素の製造方法及び装置
CN105518187B (zh) * 2013-09-06 2019-11-08 Gtat公司 生产大块硅碳化物的方法
CN105518190B (zh) * 2013-09-06 2021-08-27 Gtat公司 从硅碳化物先驱物来生产大块硅碳化物的方法和器具
US9512542B2 (en) * 2013-09-06 2016-12-06 Gtat Corporation Bulk silicon carbide having low defect density
CN106480503B (zh) * 2016-12-09 2018-11-20 河北同光晶体有限公司 一种颗粒状碳化硅单晶的生长方法
CN110168147B (zh) * 2016-12-20 2022-01-28 赛尼克公司 大直径碳化硅单晶锭的培养方法
US10793972B1 (en) 2017-07-11 2020-10-06 Ii-Vi Delaware, Inc. High quality silicon carbide crystals and method of making the same
CN108468089B (zh) * 2018-05-16 2022-06-21 福建北电新材料科技有限公司 一种高效高温固化碳化硅籽晶的工艺
CN111074338B (zh) 2018-10-22 2022-09-20 赛尼克公司 具有保护膜的籽晶及其制备方法和附着方法、采用该籽晶的晶锭的制备方法
CN109234810A (zh) * 2018-10-31 2019-01-18 福建北电新材料科技有限公司 一种无需粘结籽晶的碳化硅单晶生长装置
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) * 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
CN110453285A (zh) * 2019-09-09 2019-11-15 福建北电新材料科技有限公司 坩埚盖及坩埚
CN110872728B (zh) * 2019-11-28 2021-05-28 山东大学 一种简单、高效降低SiC单晶中碳包裹物的方法
CN110886014B (zh) * 2019-12-18 2021-07-27 福建北电新材料科技有限公司 晶体生长装置
CN111321472B (zh) * 2020-03-25 2022-02-22 哈尔滨科友半导体产业装备与技术研究院有限公司 AlN籽晶精确扩径的装置及方法
TWI811746B (zh) * 2020-07-27 2023-08-11 環球晶圓股份有限公司 碳化矽晶種及其製造方法、碳化矽晶體的製造方法
RU2770838C1 (ru) * 2021-05-04 2022-04-22 Юрий Николаевич Макаров СПОСОБ ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛОВ КАРБИДА КРЕМНИЯ С ПРОВОДИМОСТЬЮ n-ТИПА
CN117109301B (zh) * 2023-10-25 2023-12-22 山西第三代半导体技术创新中心有限公司 一种用于制备大孔径碳化硅粉料的坩埚结构
CN117431522B (zh) * 2023-10-26 2024-06-21 北京北方华创微电子装备有限公司 清洁装置、清洁腔室及其控制方法、半导体工艺设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020083892A1 (en) * 2000-12-28 2002-07-04 Hiroyuki Kondo Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal
US20080026591A1 (en) * 2006-07-28 2008-01-31 Caracal, Inc. Sintered metal components for crystal growth reactors
US20120103249A1 (en) * 2009-03-26 2012-05-03 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06316499A (ja) * 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
JP4056562B2 (ja) 1995-08-16 2008-03-05 エスアイクリスタル アクチエンゲゼルシャフト 単結晶を製造するための種結晶、種結晶の使用方法並びにＳｉＣ単結晶或いは単結晶ＳｉＣ膜の製造方法
US5944890A (en) 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US6451112B1 (en) * 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
JP4288792B2 (ja) 1999-10-15 2009-07-01 株式会社デンソー 単結晶製造方法及び単結晶製造装置
WO2001063020A1 (en) 2000-02-15 2001-08-30 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
US6863728B2 (en) 2001-02-14 2005-03-08 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
US7300519B2 (en) 2004-11-17 2007-11-27 Cree, Inc. Reduction of subsurface damage in the production of bulk SiC crystals
JP4860164B2 (ja) 2005-02-25 2012-01-25 第一三共株式会社 シームレスカプセル
US7323052B2 (en) 2005-03-24 2008-01-29 Cree, Inc. Apparatus and method for the production of bulk silicon carbide single crystals
JP4775091B2 (ja) * 2006-04-14 2011-09-21 トヨタ自動車株式会社 車両の走行制御装置
JP4926655B2 (ja) 2006-11-02 2012-05-09 新日本製鐵株式会社 炭化珪素単結晶成長用黒鉛坩堝及び炭化珪素単結晶製造装置
JP2009256159A (ja) * 2008-04-14 2009-11-05 Incubation Alliance Inc 結晶炭化珪素基板の製造方法
JP5102697B2 (ja) * 2008-05-21 2012-12-19 株式会社ブリヂストン 炭化珪素単結晶の製造方法
JP5250321B2 (ja) 2008-07-04 2013-07-31 昭和電工株式会社 炭化珪素単結晶成長用種結晶の製造方法並びに炭化珪素単結晶の製造方法
JP2010095397A (ja) * 2008-10-15 2010-04-30 Nippon Steel Corp 炭化珪素単結晶及び炭化珪素単結晶ウェハ
JP5146418B2 (ja) 2009-07-13 2013-02-20 新日鐵住金株式会社 炭化珪素単結晶製造用坩堝及び炭化珪素単結晶の製造方法
CN101985773B (zh) * 2009-11-05 2013-12-18 新疆天科合达蓝光半导体有限公司 一种籽晶处理方法和生长碳化硅单晶的方法
WO2011065060A1 (ja) 2009-11-30 2011-06-03 住友電気工業株式会社 単結晶の製造方法
JP2011184208A (ja) 2010-03-04 2011-09-22 Bridgestone Corp 炭化ケイ素単結晶の製造装置及び炭化ケイ素単結晶の製造方法
KR20120139398A (ko) 2011-06-17 2012-12-27 동의대학교 산학협력단 4Ｈ-ＳｉＣ단결정 성장방법 및 성장장치
KR20130014272A (ko) 2011-07-29 2013-02-07 엘지이노텍 주식회사 잉곳 제조 장치
JP2013124196A (ja) 2011-12-14 2013-06-24 Sumitomo Electric Ind Ltd 種結晶の接着状態の検査方法
JP5808668B2 (ja) 2011-12-28 2015-11-10 株式会社豊田中央研究所 単結晶製造装置
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
JP6473455B2 (ja) * 2013-09-06 2019-02-20 ジーティーエイティー コーポレーションＧｔａｔ Ｃｏｒｐｏｒａｔｉｏｎ 炭化ケイ素シードを用いたバルクの炭化ケイ素の製造方法及び装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020083892A1 (en) * 2000-12-28 2002-07-04 Hiroyuki Kondo Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal
US20080026591A1 (en) * 2006-07-28 2008-01-31 Caracal, Inc. Sintered metal components for crystal growth reactors
US20120103249A1 (en) * 2009-03-26 2012-05-03 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus

Also Published As

Publication number Publication date
TWI665343B (zh) 2019-07-11
JP2016534973A (ja) 2016-11-10
CN105518189B (zh) 2019-10-15
TW201522723A (zh) 2015-06-16
US10793971B2 (en) 2020-10-06
CN110578172B (zh) 2022-10-28
DE112014004088T5 (de) 2016-06-23
KR102245507B1 (ko) 2021-04-28
US20150068446A1 (en) 2015-03-12
US20210095392A1 (en) 2021-04-01
CN105518189A (zh) 2016-04-20
WO2015035152A1 (en) 2015-03-12
TW201920783A (zh) 2019-06-01
KR20160052685A (ko) 2016-05-12
US11421343B2 (en) 2022-08-23
CN110578172A (zh) 2019-12-17
DE112014004088B4 (de) 2026-05-13
JP6473455B2 (ja) 2019-02-20

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