TWI647348B - 使用矽碳化物晶種來生產大塊矽碳化物的方法和器具 - Google Patents
使用矽碳化物晶種來生產大塊矽碳化物的方法和器具 Download PDFInfo
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- TWI647348B TWI647348B TW103130960A TW103130960A TWI647348B TW I647348 B TWI647348 B TW I647348B TW 103130960 A TW103130960 A TW 103130960A TW 103130960 A TW103130960 A TW 103130960A TW I647348 B TWI647348 B TW I647348B
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- Prior art keywords
- silicon carbide
- seed
- crucible
- item
- patent application
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 239000013078 crystal Substances 0.000 title claims description 74
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 title 2
- 229910003468 tantalcarbide Inorganic materials 0.000 title 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 228
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 224
- 239000002243 precursor Substances 0.000 claims abstract description 52
- 238000000859 sublimation Methods 0.000 claims abstract description 33
- 230000008022 sublimation Effects 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 239000012212 insulator Substances 0.000 claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 61
- 239000010410 layer Substances 0.000 claims description 61
- 229910002804 graphite Inorganic materials 0.000 claims description 31
- 239000010439 graphite Substances 0.000 claims description 31
- 229910052799 carbon Inorganic materials 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 239000011247 coating layer Substances 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 238000010899 nucleation Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 28
- 239000002245 particle Substances 0.000 description 27
- 230000007547 defect Effects 0.000 description 16
- 239000007787 solid Substances 0.000 description 15
- 210000001161 mammalian embryo Anatomy 0.000 description 10
- 239000011856 silicon-based particle Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 210000002257 embryonic structure Anatomy 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 239000011236 particulate material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001931 thermography Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000008241 heterogeneous mixture Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361874620P | 2013-09-06 | 2013-09-06 | |
| US61/874,620 | 2013-09-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201522723A TW201522723A (zh) | 2015-06-16 |
| TWI647348B true TWI647348B (zh) | 2019-01-11 |
Family
ID=52624260
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103130960A TWI647348B (zh) | 2013-09-06 | 2014-09-09 | 使用矽碳化物晶種來生產大塊矽碳化物的方法和器具 |
| TW107144169A TWI665343B (zh) | 2013-09-06 | 2014-09-09 | 使用矽碳化物晶種來生產大塊矽碳化物的方法和器具 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107144169A TWI665343B (zh) | 2013-09-06 | 2014-09-09 | 使用矽碳化物晶種來生產大塊矽碳化物的方法和器具 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10793971B2 (enExample) |
| JP (1) | JP6473455B2 (enExample) |
| KR (1) | KR102245507B1 (enExample) |
| CN (2) | CN105518189B (enExample) |
| DE (1) | DE112014004088T5 (enExample) |
| TW (2) | TWI647348B (enExample) |
| WO (1) | WO2015035152A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105518189B (zh) * | 2013-09-06 | 2019-10-15 | Gtat公司 | 使用硅碳化物晶种来生产大块硅碳化物的方法和器具 |
| KR102245506B1 (ko) * | 2013-09-06 | 2021-04-28 | 지티에이티 코포레이션 | 탄화규소 전구체로부터 벌크 탄화규소를 제조하기 위한 방법 및 장치 |
| CN110670124B (zh) * | 2013-09-06 | 2021-07-30 | Gtat公司 | 生产大块硅碳化物的方法 |
| US9512542B2 (en) * | 2013-09-06 | 2016-12-06 | Gtat Corporation | Bulk silicon carbide having low defect density |
| CN106480503B (zh) * | 2016-12-09 | 2018-11-20 | 河北同光晶体有限公司 | 一种颗粒状碳化硅单晶的生长方法 |
| WO2018117645A2 (ko) * | 2016-12-20 | 2018-06-28 | 에스케이씨 주식회사 | 대구경 탄화규소 단결정 잉곳의 성장 방법 |
| US10793972B1 (en) | 2017-07-11 | 2020-10-06 | Ii-Vi Delaware, Inc. | High quality silicon carbide crystals and method of making the same |
| CN108468089B (zh) * | 2018-05-16 | 2022-06-21 | 福建北电新材料科技有限公司 | 一种高效高温固化碳化硅籽晶的工艺 |
| CN111074338B (zh) * | 2018-10-22 | 2022-09-20 | 赛尼克公司 | 具有保护膜的籽晶及其制备方法和附着方法、采用该籽晶的晶锭的制备方法 |
| CN109234810A (zh) * | 2018-10-31 | 2019-01-18 | 福建北电新材料科技有限公司 | 一种无需粘结籽晶的碳化硅单晶生长装置 |
| US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
| US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10611052B1 (en) * | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| CN110453285A (zh) * | 2019-09-09 | 2019-11-15 | 福建北电新材料科技有限公司 | 坩埚盖及坩埚 |
| CN110872728B (zh) * | 2019-11-28 | 2021-05-28 | 山东大学 | 一种简单、高效降低SiC单晶中碳包裹物的方法 |
| CN110886014B (zh) * | 2019-12-18 | 2021-07-27 | 福建北电新材料科技有限公司 | 晶体生长装置 |
| CN111321472B (zh) * | 2020-03-25 | 2022-02-22 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | AlN籽晶精确扩径的装置及方法 |
| US11781241B2 (en) * | 2020-07-27 | 2023-10-10 | Globalwafers Co., Ltd. | Silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot |
| RU2770838C1 (ru) * | 2021-05-04 | 2022-04-22 | Юрий Николаевич Макаров | СПОСОБ ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛОВ КАРБИДА КРЕМНИЯ С ПРОВОДИМОСТЬЮ n-ТИПА |
| CN117109301B (zh) * | 2023-10-25 | 2023-12-22 | 山西第三代半导体技术创新中心有限公司 | 一种用于制备大孔径碳化硅粉料的坩埚结构 |
| CN117431522B (zh) * | 2023-10-26 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 清洁装置、清洁腔室及其控制方法、半导体工艺设备 |
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| US20020083892A1 (en) * | 2000-12-28 | 2002-07-04 | Hiroyuki Kondo | Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal |
| US20080026591A1 (en) * | 2006-07-28 | 2008-01-31 | Caracal, Inc. | Sintered metal components for crystal growth reactors |
| US20120103249A1 (en) * | 2009-03-26 | 2012-05-03 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
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| JPH06316499A (ja) * | 1993-04-30 | 1994-11-15 | Sharp Corp | 炭化珪素単結晶の製造方法 |
| US5944890A (en) * | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
| JP4288792B2 (ja) * | 1999-10-15 | 2009-07-01 | 株式会社デンソー | 単結晶製造方法及び単結晶製造装置 |
| US6451112B1 (en) * | 1999-10-15 | 2002-09-17 | Denso Corporation | Method and apparatus for fabricating high quality single crystal |
| JP4880164B2 (ja) * | 2000-02-15 | 2012-02-22 | ザ フォックス グループ，インコーポレイティド | 低欠陥密度炭化ケイ素材料 |
| US6863728B2 (en) | 2001-02-14 | 2005-03-08 | The Fox Group, Inc. | Apparatus for growing low defect density silicon carbide |
| US7300519B2 (en) | 2004-11-17 | 2007-11-27 | Cree, Inc. | Reduction of subsurface damage in the production of bulk SiC crystals |
| US7323052B2 (en) * | 2005-03-24 | 2008-01-29 | Cree, Inc. | Apparatus and method for the production of bulk silicon carbide single crystals |
| JP4775091B2 (ja) * | 2006-04-14 | 2011-09-21 | トヨタ自動車株式会社 | 車両の走行制御装置 |
| JP4926655B2 (ja) * | 2006-11-02 | 2012-05-09 | 新日本製鐵株式会社 | 炭化珪素単結晶成長用黒鉛坩堝及び炭化珪素単結晶製造装置 |
| JP2009256159A (ja) | 2008-04-14 | 2009-11-05 | Incubation Alliance Inc | 結晶炭化珪素基板の製造方法 |
| JP5102697B2 (ja) * | 2008-05-21 | 2012-12-19 | 株式会社ブリヂストン | 炭化珪素単結晶の製造方法 |
| JP2010095397A (ja) * | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
| JP5146418B2 (ja) * | 2009-07-13 | 2013-02-20 | 新日鐵住金株式会社 | 炭化珪素単結晶製造用坩堝及び炭化珪素単結晶の製造方法 |
| CN101985773B (zh) * | 2009-11-05 | 2013-12-18 | 新疆天科合达蓝光半导体有限公司 | 一种籽晶处理方法和生长碳化硅单晶的方法 |
| WO2011065060A1 (ja) * | 2009-11-30 | 2011-06-03 | 住友電気工業株式会社 | 単結晶の製造方法 |
| JP2011184208A (ja) * | 2010-03-04 | 2011-09-22 | Bridgestone Corp | 炭化ケイ素単結晶の製造装置及び炭化ケイ素単結晶の製造方法 |
| JP5808668B2 (ja) | 2011-12-28 | 2015-11-10 | 株式会社豊田中央研究所 | 単結晶製造装置 |
| US9738991B2 (en) * | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| CN105518189B (zh) * | 2013-09-06 | 2019-10-15 | Gtat公司 | 使用硅碳化物晶种来生产大块硅碳化物的方法和器具 |
-
2014
- 2014-09-05 CN CN201480049104.XA patent/CN105518189B/zh active Active
- 2014-09-05 WO PCT/US2014/054274 patent/WO2015035152A1/en not_active Ceased
- 2014-09-05 JP JP2016540416A patent/JP6473455B2/ja active Active
- 2014-09-05 US US14/478,567 patent/US10793971B2/en active Active
- 2014-09-05 DE DE112014004088.6T patent/DE112014004088T5/de active Pending
- 2014-09-05 KR KR1020167008941A patent/KR102245507B1/ko active Active
- 2014-09-05 CN CN201910876001.5A patent/CN110578172B/zh active Active
- 2014-09-09 TW TW103130960A patent/TWI647348B/zh active
- 2014-09-09 TW TW107144169A patent/TWI665343B/zh active
-
2020
- 2020-09-15 US US17/021,691 patent/US11421343B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020083892A1 (en) * | 2000-12-28 | 2002-07-04 | Hiroyuki Kondo | Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal |
| US20080026591A1 (en) * | 2006-07-28 | 2008-01-31 | Caracal, Inc. | Sintered metal components for crystal growth reactors |
| US20120103249A1 (en) * | 2009-03-26 | 2012-05-03 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105518189B (zh) | 2019-10-15 |
| US10793971B2 (en) | 2020-10-06 |
| JP6473455B2 (ja) | 2019-02-20 |
| DE112014004088T5 (de) | 2016-06-23 |
| US20210095392A1 (en) | 2021-04-01 |
| TW201920783A (zh) | 2019-06-01 |
| KR20160052685A (ko) | 2016-05-12 |
| TWI665343B (zh) | 2019-07-11 |
| CN110578172A (zh) | 2019-12-17 |
| CN105518189A (zh) | 2016-04-20 |
| KR102245507B1 (ko) | 2021-04-28 |
| TW201522723A (zh) | 2015-06-16 |
| WO2015035152A1 (en) | 2015-03-12 |
| JP2016534973A (ja) | 2016-11-10 |
| CN110578172B (zh) | 2022-10-28 |
| US11421343B2 (en) | 2022-08-23 |
| US20150068446A1 (en) | 2015-03-12 |
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