DE112014004088B4 - Verfahren zur BIldung von Siliciumcarbid - Google Patents

Verfahren zur BIldung von Siliciumcarbid

Info

Publication number
DE112014004088B4
DE112014004088B4 DE112014004088.6T DE112014004088T DE112014004088B4 DE 112014004088 B4 DE112014004088 B4 DE 112014004088B4 DE 112014004088 T DE112014004088 T DE 112014004088T DE 112014004088 B4 DE112014004088 B4 DE 112014004088B4
Authority
DE
Germany
Prior art keywords
silicon carbide
seed crystal
crucible
procedure according
micrometers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112014004088.6T
Other languages
German (de)
English (en)
Other versions
DE112014004088T5 (de
Inventor
Roman V. Drachev
Parthasarathy Santhanaraghavan
Andriy M. Andrukhiv
David S. Lyttle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
Original Assignee
GTAT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of DE112014004088T5 publication Critical patent/DE112014004088T5/de
Application granted granted Critical
Publication of DE112014004088B4 publication Critical patent/DE112014004088B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
DE112014004088.6T 2013-09-06 2014-09-05 Verfahren zur BIldung von Siliciumcarbid Active DE112014004088B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874620P 2013-09-06 2013-09-06
US61/874,620 2013-09-06
PCT/US2014/054274 WO2015035152A1 (en) 2013-09-06 2014-09-05 Method and apparatus for producing bulk silicon carbide using a silicon carbide seed

Publications (2)

Publication Number Publication Date
DE112014004088T5 DE112014004088T5 (de) 2016-06-23
DE112014004088B4 true DE112014004088B4 (de) 2026-05-13

Family

ID=52624260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112014004088.6T Active DE112014004088B4 (de) 2013-09-06 2014-09-05 Verfahren zur BIldung von Siliciumcarbid

Country Status (7)

Country Link
US (2) US10793971B2 (enExample)
JP (1) JP6473455B2 (enExample)
KR (1) KR102245507B1 (enExample)
CN (2) CN105518189B (enExample)
DE (1) DE112014004088B4 (enExample)
TW (2) TWI665343B (enExample)
WO (1) WO2015035152A1 (enExample)

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US10793971B2 (en) * 2013-09-06 2020-10-06 Gtat Corporation Method and apparatus for producing bulk silicon carbide using a silicon carbide seed
CN110670124B (zh) * 2013-09-06 2021-07-30 Gtat公司 生产大块硅碳化物的方法
US10633762B2 (en) 2013-09-06 2020-04-28 GTAT Corporation. Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide
WO2015035170A1 (en) * 2013-09-06 2015-03-12 Gtat Corporation Bulk silicon carbide having low defect density
CN106480503B (zh) * 2016-12-09 2018-11-20 河北同光晶体有限公司 一种颗粒状碳化硅单晶的生长方法
US11339498B2 (en) * 2016-12-20 2022-05-24 Senic Inc. Method for growing single crystal silicon carbide ingot having large diameter
US10793972B1 (en) 2017-07-11 2020-10-06 Ii-Vi Delaware, Inc. High quality silicon carbide crystals and method of making the same
CN108468089B (zh) * 2018-05-16 2022-06-21 福建北电新材料科技有限公司 一种高效高温固化碳化硅籽晶的工艺
CN111074338B (zh) * 2018-10-22 2022-09-20 赛尼克公司 具有保护膜的籽晶及其制备方法和附着方法、采用该籽晶的晶锭的制备方法
CN109234810A (zh) * 2018-10-31 2019-01-18 福建北电新材料科技有限公司 一种无需粘结籽晶的碳化硅单晶生长装置
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) * 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
CN110453285A (zh) * 2019-09-09 2019-11-15 福建北电新材料科技有限公司 坩埚盖及坩埚
CN110872728B (zh) * 2019-11-28 2021-05-28 山东大学 一种简单、高效降低SiC单晶中碳包裹物的方法
CN110886014B (zh) * 2019-12-18 2021-07-27 福建北电新材料科技有限公司 晶体生长装置
CN111321472B (zh) * 2020-03-25 2022-02-22 哈尔滨科友半导体产业装备与技术研究院有限公司 AlN籽晶精确扩径的装置及方法
CN113981535A (zh) * 2020-07-27 2022-01-28 环球晶圆股份有限公司 碳化硅晶种及碳化硅晶体的制造方法
RU2770838C1 (ru) * 2021-05-04 2022-04-22 Юрий Николаевич Макаров СПОСОБ ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛОВ КАРБИДА КРЕМНИЯ С ПРОВОДИМОСТЬЮ n-ТИПА
CN117109301B (zh) * 2023-10-25 2023-12-22 山西第三代半导体技术创新中心有限公司 一种用于制备大孔径碳化硅粉料的坩埚结构
CN117431522B (zh) * 2023-10-26 2024-06-21 北京北方华创微电子装备有限公司 清洁装置、清洁腔室及其控制方法、半导体工艺设备

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US20070283880A1 (en) 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
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US20110111171A1 (en) 2008-07-04 2011-05-12 Showa Denko K.K. Seed crystal for silicon carbide single crystal growth, method for producing the seed crystal, silicon carbide single crystal, and method for producing the single crystal
US20110214606A1 (en) 2010-03-04 2011-09-08 Bridgestone Corporation Apparatus and method for producing silicon carbide single crystal
US20120006255A1 (en) 2009-11-30 2012-01-12 Sumitomo Electric Industries, Ltd Method of manufacturing single crystal
JP4860164B2 (ja) 2005-02-25 2012-01-25 第一三共株式会社 シームレスカプセル
US20120103249A1 (en) 2009-03-26 2012-05-03 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus
KR20120139398A (ko) 2011-06-17 2012-12-27 동의대학교 산학협력단 4Ｈ-ＳｉＣ단결정 성장방법 및 성장장치
JP2013124196A (ja) 2011-12-14 2013-06-24 Sumitomo Electric Ind Ltd 種結晶の接着状態の検査方法
JP2013136494A (ja) 2011-12-28 2013-07-11 Toyota Central R&D Labs Inc 単結晶製造装置、ＳｉＣ単結晶、ウェハ、及び、半導体デバイス
US20140158042A1 (en) 2011-07-29 2014-06-12 Lg Innotek Co., Ltd. Apparatus for fabricating ingot
US20140220298A1 (en) 2013-02-05 2014-08-07 Dow Corning Corporation Sic crystal with low dislocation density
EP2954101B1 (en) 2013-02-05 2020-02-19 DDP Specialty Electronic Materials US 9, LLC Method and system for forming a sic crystal

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WO1997007265A1 (de) 1995-08-16 1997-02-27 Siemens Aktiengesellschaft KEIMKRISTALL ZUM HERSTELLEN VON EINKRISTALLEN, VERWENDUNG DES KEIMKRISTALLS UND VERFAHREN ZUM HERSTELLEN VON SiC-EINKRISTALLEN ODER EINKRISTALLINEN SiC-SCHICHTEN
US5944890A (en) 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
JP2001114599A (ja) 1999-10-15 2001-04-24 Denso Corp 単結晶製造方法及び単結晶製造装置
US6451112B1 (en) 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
WO2001063020A1 (en) 2000-02-15 2001-08-30 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
US20020083892A1 (en) 2000-12-28 2002-07-04 Hiroyuki Kondo Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal
US20030094132A1 (en) 2001-02-14 2003-05-22 Vodakov Yury Alexandrovich Apparatus for growing low defect density silicon carbide
US20060102068A1 (en) 2004-11-17 2006-05-18 Tsvetkov Valeri F Reduction of subsurface damage in the production of bulk SiC crystals
JP4860164B2 (ja) 2005-02-25 2012-01-25 第一三共株式会社 シームレスカプセル
US20070283880A1 (en) 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
US20080026591A1 (en) 2006-07-28 2008-01-31 Caracal, Inc. Sintered metal components for crystal growth reactors
JP2008115033A (ja) 2006-11-02 2008-05-22 Nippon Steel Corp 炭化珪素単結晶成長用黒鉛坩堝及び炭化珪素単結晶製造装置
JP2009256159A (ja) 2008-04-14 2009-11-05 Incubation Alliance Inc 結晶炭化珪素基板の製造方法
US20110111171A1 (en) 2008-07-04 2011-05-12 Showa Denko K.K. Seed crystal for silicon carbide single crystal growth, method for producing the seed crystal, silicon carbide single crystal, and method for producing the single crystal
US20120103249A1 (en) 2009-03-26 2012-05-03 Ii-Vi Incorporated Sic single crystal sublimation growth method and apparatus
JP2011020860A (ja) 2009-07-13 2011-02-03 Nippon Steel Corp 炭化珪素単結晶製造用坩堝及び炭化珪素単結晶の製造方法
US20120006255A1 (en) 2009-11-30 2012-01-12 Sumitomo Electric Industries, Ltd Method of manufacturing single crystal
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US20110214606A1 (en) 2010-03-04 2011-09-08 Bridgestone Corporation Apparatus and method for producing silicon carbide single crystal
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US20140158042A1 (en) 2011-07-29 2014-06-12 Lg Innotek Co., Ltd. Apparatus for fabricating ingot
JP2013124196A (ja) 2011-12-14 2013-06-24 Sumitomo Electric Ind Ltd 種結晶の接着状態の検査方法
JP2013136494A (ja) 2011-12-28 2013-07-11 Toyota Central R&D Labs Inc 単結晶製造装置、ＳｉＣ単結晶、ウェハ、及び、半導体デバイス
US20140220298A1 (en) 2013-02-05 2014-08-07 Dow Corning Corporation Sic crystal with low dislocation density
WO2014123636A1 (en) 2013-02-05 2014-08-14 Dow Corning Corporation Sic crystal with low dislocation density
EP2954100B1 (en) 2013-02-05 2019-05-15 Dow Silicones Corporation Method for manufacturing a sic crystal with low dislocation density
EP2954101B1 (en) 2013-02-05 2020-02-19 DDP Specialty Electronic Materials US 9, LLC Method and system for forming a sic crystal

Also Published As

Publication number Publication date
CN110578172A (zh) 2019-12-17
WO2015035152A1 (en) 2015-03-12
US20150068446A1 (en) 2015-03-12
TW201920783A (zh) 2019-06-01
TWI647348B (zh) 2019-01-11
US10793971B2 (en) 2020-10-06
CN105518189B (zh) 2019-10-15
CN110578172B (zh) 2022-10-28
JP2016534973A (ja) 2016-11-10
CN105518189A (zh) 2016-04-20
US11421343B2 (en) 2022-08-23
DE112014004088T5 (de) 2016-06-23
TWI665343B (zh) 2019-07-11
TW201522723A (zh) 2015-06-16
JP6473455B2 (ja) 2019-02-20
KR102245507B1 (ko) 2021-04-28
US20210095392A1 (en) 2021-04-01
KR20160052685A (ko) 2016-05-12

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