CN110216279B - 一种过渡金属掺杂二维薄片的制备方法 - Google Patents
一种过渡金属掺杂二维薄片的制备方法 Download PDFInfo
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 9
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- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 7
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- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- BJQWBACJIAKDTJ-UHFFFAOYSA-N tetrabutylphosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CCCC BJQWBACJIAKDTJ-UHFFFAOYSA-N 0.000 description 1
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/0551—Flake form nanoparticles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/068—Flake-like particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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- C01B25/003—Phosphorus
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/19—Preparation by exfoliation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
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CN112795209B (zh) * | 2019-11-14 | 2021-11-30 | 清华大学 | 环境稳定、导电性以及机械性能优异的二维碳化钛薄膜及其制备方法与应用 |
CN110963505B (zh) * | 2019-12-06 | 2023-04-28 | 深圳市中科墨磷科技有限公司 | 一种Li插层H型二维纳米片的制备方法及其在光电固氮中的应用 |
CN111333045B (zh) * | 2020-03-22 | 2022-08-12 | 昆明理工大学 | 一种电化学辅助制备掺杂纳米黑磷的方法 |
CN111517294A (zh) * | 2020-06-26 | 2020-08-11 | 昆明理工大学 | 一种金属掺杂纳米黑磷的制备方法 |
CN112635620A (zh) * | 2020-12-21 | 2021-04-09 | 昆明理工大学 | 一种Gr/MX2/Si太阳能电池的制备方法 |
CN112811401B (zh) * | 2021-01-11 | 2022-09-13 | 厦门大学 | 一种大量获得少层二维碲烯的制备方法 |
CN113880060A (zh) * | 2021-10-21 | 2022-01-04 | 化学与精细化工广东省实验室 | 一种电化学辅助剥离硫代磷酸铁晶体同步掺杂单原子的方法 |
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JP2009184861A (ja) * | 2008-02-05 | 2009-08-20 | Seoul National Univ Industry Foundation | 黒燐及び黒燐炭素複合体の製造方法、製造された黒燐及び黒燐炭素複合体及びそれを含むリチウム二次電池とその使用方法 |
KR20150027870A (ko) * | 2013-08-29 | 2015-03-13 | 연세대학교 산학협력단 | 그래핀 기반 나노복합소재의 합성 방법 및 상기 방법을 이용하여 합성된 그래핀 기반 나노복합소재 |
CN104779380B (zh) * | 2015-04-10 | 2017-03-08 | 北京石油化工学院 | 一种利用电化学制备磷烯的方法 |
CN105293580A (zh) * | 2015-10-15 | 2016-02-03 | 南京大学 | 一种制备过渡金属硫化物二维纳米片层分散液的方法 |
CN105405677A (zh) * | 2015-11-23 | 2016-03-16 | 复旦大学 | 一种由石墨直接制备石墨烯-二氧化锰复合材料的方法及其应用 |
CN105671604B (zh) * | 2016-01-26 | 2018-08-21 | 临沂大学 | 二维电化学构建纳微电学元件的改进方法 |
CN106145193B (zh) * | 2016-07-05 | 2017-06-30 | 济南大学 | 一种双金属共掺杂二维纳米电极材料的制备方法 |
CN106315515B (zh) * | 2016-08-04 | 2019-03-19 | 河北大学 | 一种金属氧化物二维材料及其制备方法和应用 |
CN107937949B (zh) * | 2016-10-13 | 2020-04-21 | 香港中文大学 | 制备二维层状垂直异质结的方法 |
CN106582766B (zh) * | 2016-12-28 | 2019-03-05 | 山东理工大学 | 用限域微反应器制备过渡金属和氮共掺杂的二维石墨烯 |
EP3379595B1 (en) * | 2017-03-24 | 2022-11-23 | Vestel Elektronik Sanayi ve Ticaret A.S. | Storage device and method |
CN107946090B (zh) * | 2017-11-20 | 2019-07-02 | 宝鸡文理学院 | 一种高容量钴离子插层多孔二氧化锰电极材料及其制备方法 |
CN109019540A (zh) * | 2018-08-17 | 2018-12-18 | 深圳市中科墨磷科技有限公司 | 一种制备黑磷纳米片的方法 |
CN109023298B (zh) * | 2018-08-21 | 2020-11-24 | 清华-伯克利深圳学院筹备办公室 | 一种过渡金属掺杂二硫化钼薄层材料及其制备方法和用途 |
CN109216648B (zh) * | 2018-08-21 | 2021-08-17 | 中国科学院金属研究所 | 离子预嵌入二维层状材料构筑的插层电极及其制备方法和应用 |
CN109306498B (zh) * | 2018-10-26 | 2020-08-11 | 浙江大学 | 一种二维超薄二硫化铌纳米片的制备方法及产品和应用 |
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Effective date of registration: 20240516 Address after: 1068 No. 518055 Guangdong city of Shenzhen province Nanshan District Shenzhen University city academy Avenue Patentee after: SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY CHINESE ACADEMY OF SCIENCES Country or region after: China Address before: 443007 No. 66-2 Ting Ting Road, Ting Ting District, Yichang, Hubei Patentee before: HUBEI MOPHOS TECHNOLOGY Co.,Ltd. Country or region before: China |
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