CN106145193B - 一种双金属共掺杂二维纳米电极材料的制备方法 - Google Patents
一种双金属共掺杂二维纳米电极材料的制备方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 35
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 25
- 229910052742 iron Inorganic materials 0.000 claims abstract description 24
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 21
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 18
- 239000011572 manganese Substances 0.000 claims abstract description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 18
- 239000011733 molybdenum Substances 0.000 claims abstract description 18
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000009830 intercalation Methods 0.000 claims abstract description 14
- 230000002687 intercalation Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000011065 in-situ storage Methods 0.000 claims abstract description 9
- 239000002114 nanocomposite Substances 0.000 claims abstract description 3
- 239000002086 nanomaterial Substances 0.000 claims description 25
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 21
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- CMXPERZAMAQXSF-UHFFFAOYSA-M sodium;1,4-bis(2-ethylhexoxy)-1,4-dioxobutane-2-sulfonate;1,8-dihydroxyanthracene-9,10-dione Chemical compound [Na+].O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=CC=C2O.CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC CMXPERZAMAQXSF-UHFFFAOYSA-M 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 8
- 150000002696 manganese Chemical class 0.000 claims description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 4
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 4
- 239000012498 ultrapure water Substances 0.000 claims description 4
- 238000001291 vacuum drying Methods 0.000 claims description 4
- 229910021380 Manganese Chloride Inorganic materials 0.000 claims description 3
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 150000007513 acids Chemical class 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims description 3
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 claims description 3
- 229910000360 iron(III) sulfate Inorganic materials 0.000 claims description 3
- 239000011565 manganese chloride Substances 0.000 claims description 3
- 235000002867 manganese chloride Nutrition 0.000 claims description 3
- 229940099607 manganese chloride Drugs 0.000 claims description 3
- 229940099596 manganese sulfate Drugs 0.000 claims description 3
- 239000011702 manganese sulphate Substances 0.000 claims description 3
- 235000007079 manganese sulphate Nutrition 0.000 claims description 3
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 claims description 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 claims description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 17
- 230000005518 electrochemistry Effects 0.000 abstract description 11
- 239000004408 titanium dioxide Substances 0.000 abstract description 11
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- 239000000126 substance Substances 0.000 abstract description 7
- 239000002055 nanoplate Substances 0.000 abstract description 5
- 238000007146 photocatalysis Methods 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 239000000356 contaminant Substances 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 239000010970 precious metal Substances 0.000 abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 229910015136 FeMn Inorganic materials 0.000 abstract 2
- 239000002135 nanosheet Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 19
- 238000012360 testing method Methods 0.000 description 8
- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical compound [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 description 5
- 229910001437 manganese ion Inorganic materials 0.000 description 5
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- -1 iron ion Chemical class 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 241000790917 Dioxys <bee> Species 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QKNYBSVHEMOAJP-UHFFFAOYSA-N 2-amino-2-(hydroxymethyl)propane-1,3-diol;hydron;chloride Chemical compound Cl.OCC(N)(CO)CO QKNYBSVHEMOAJP-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- HGWOWDFNMKCVLG-UHFFFAOYSA-N [O--].[O--].[Ti+4].[Ti+4] Chemical compound [O--].[O--].[Ti+4].[Ti+4] HGWOWDFNMKCVLG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003426 co-catalyst Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000005580 one pot reaction Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/06—Sulfides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
- C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
- C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
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- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
本发明公开了一种无贵金属掺杂、成本低、制备简单、高光电化学活性的双金属共掺杂二维纳米电极材料的制备方法。该方法在铁、锰共插层的二硫化钼纳米片上原位复合铁、锰共掺杂的二氧化钛纳米片材料,一锅法制备了铁、锰共掺杂二氧化钛纳米方块原位复合二硫化钼的二维纳米复合材料FeMn‑TiO2/MoS2。所制备的FeMn‑TiO2/MoS2可应用于太阳能光伏电池制备、光电化学传感器构建以及光催化水分解制氢、光催化降解有机污染物等领域。本发明属于新型纳米功能材料与绿色能源技术领域。
Description
技术领域
本发明涉及一种二维纳米电极材料的制备方法,所制备的二维纳米电极材料具有光电化学活性,可应用于太阳能光伏电池制备、光电化学传感器构建以及光催化水分解制氢、光催化降解有机污染物等领域。本发明属于新型纳米功能材料与绿色能源技术领域。
背景技术
太阳能电池又称为“太阳能芯片”或“光电池”,是一种利用太阳光直接发电的光电半导体薄片。它只要被满足一定照度条件的光照到,瞬间就可输出电压及在有回路的情况下产生电流。在物理学上称为太阳能光伏,简称光伏。太阳能电池是通过光电效应或者光化学效应直接把光能转化成电能的装置。光伏电池中常用的电极材料主要包括氧化硅、二氧化钛、氧化锌等多种半导体,其中二氧化钛(TiO2)因其氧化能力强,化学性质稳定无毒,并且可以被作为光催化剂,用来光催化水分解制氢和光催化降解有机污染物。然而,要充分发挥二氧化钛的实际应用水平,需要一方面通过调控其材料形貌以暴露更多高活性晶面来提高光电化学活性,另一方面通过掺杂不同金属或金属氧化物调控光敏波长向可见光范围扩展来提高太阳光的利用率。由于二维二氧化钛纳米材料,如二氧化钛纳米片、二氧化钛纳米方块等,能够暴露更多的高活性晶面,具有更高的光电化学活性,二氧化钛纳米片具有比纳米粒子更好地应用前景,对于二氧化钛纳米片的研究也备受关注。而单一的二氧化钛纳米材料的光敏波长一般在紫外区,而且由于分散性差、易堆叠而互相影响,从而降低光电化学活性,不利于实际应用。因此,研发成本低、制备简单的高光电化学活性的二氧化钛纳米材料具有重要的科学意义和应用价值。
二硫化钼(化学式为MoS2)纳米材料,具有二维层状结构,是应用最广泛的固体润滑剂之一。其剥离后的片状二维纳米材料,是性能优异的半导体纳米材料,除了具有大的比表面积,可以作为催化剂和生物抗体的载体,提高负载量,同时作为助催化剂也具有优良的电子传递性能。
目前,大多数的合成手段都是分开合成后,再将催化剂与载体进行复合,过程繁琐,产率不高。因此,对于原位复合制备具有优良催化性能的催化剂具有广泛的应用前景和重要的科学意义。
综上可知,在合适的载体上设计、制备高光电化学活性、高分散稳定性的二氧化钛纳米片,是制备二氧化钛纳米材料并进而制备高光电化学活性的二维纳米电极材料的关键技术。
发明内容
本发明的目的在于提供一种无贵金属掺杂、成本低、制备简单、具有高光电化学活性的二维纳米电极材料。
本发明采用的技术方案如下:
1. 一种双金属共掺杂二维纳米电极材料的制备方法,所述的双金属共掺杂二维纳米电极材料为铁、锰共掺杂二氧化钛纳米方块原位复合二硫化钼的二维纳米复合材料FeMn-TiO2/MoS2,其特征在于,所述的FeMn-TiO2/MoS2的制备步骤为:
(1)由于二硫化钼为二维层状结构,可以利用锂离子对其进行插层处理,以达到利于剥离从而制备片状结构二硫化钼薄层二维纳米材料的目的,因此,本发明首先取0.6 g二硫化钼粉末、0.2 ~ 2.0 mmol铁盐和0.2 ~ 2.0 mmol锰盐共同加入到3~10 mL正丁基锂溶液中,在氮气保护和30 ~ 60 ℃下,搅拌12 ~ 48小时,该反应是利用半径较小锂离子和半径较大的铁离子、锰离子相继插层到二硫化钼中,将二硫化钼块体材料层层分离,反应充分后,得到反应后的溶液;
(2)利用非极性溶剂洗涤步骤(1)中反应后的溶液,使用孔径为450 μm的滤膜进行过滤,将所得固体溶于乙醇水溶液中,然后在30 ~ 60 ℃下进行水浴超声处理,将锂离子和铁离子、锰离子共插层的二硫化钼进行超声剥离,处理完后,再利用乙醇洗涤处理后的溶液,将半径较小的锂离子洗涤去掉后,真空干燥,得到铁、锰共插层的二硫化钼纳米材料,由于剥离后的二硫化钼片状二维薄层纳米材料,具有较大的比表面积,吸附了反应中的铁离子、锰离子,因此所制得的铁、锰共插层的二硫化钼纳米材料为吸附有铁离子、锰离子的二硫化钼片状二维纳米材料;
(3)取10 ~ 500 mg步骤(2)制得的铁、锰共插层的二硫化钼纳米材料加入到5 mL钛酸四丁酯中,搅拌1小时后,边搅拌边缓慢加入0.5 ~ 0.8 mL氢氟酸,然后160~180 ℃下在反应釜中反应18 ~ 20小时,使得二氧化钛纳米片在二硫化钼片状二维纳米材料上原位复合,形成复合纳米材料,由于二硫化钼片状二维纳米材料上吸附的铁离子、锰离子在二氧化钛纳米片生长过程中,参与反应过程,得到了铁、锰共掺杂的二氧化钛纳米方块材料,并很好的分散在二硫化钼片状二维纳米材料上;
(4)将步骤(3)所得的反应产物,用超纯水和无水乙醇离心洗涤三次后,50 ℃下真空干燥,即制得FeMn-TiO2/MoS2;
所述的正丁基锂溶液为正丁基锂的己烷溶液,浓度为1.6 mol/L;
所述的铁盐选自下列之一:硫酸铁、氯化铁、硝酸铁、有机铁化合物;
所述的锰盐选自下列之一:硫酸锰、氯化锰、硝酸锰、有机锰化合物;
所述的非极性溶剂选自下列之一:己烷、环己烷、四氯化碳、苯、甲苯;
所述的乙醇水溶液,该水溶液中乙醇和水的体积比为0.5~3(乙醇):1(水);
所述的水浴超声处理,处理时间为1小时。
本发明的有益成果
(1)本发明所述的二维纳米电极材料制备方法简单、快速,无贵金属掺杂、成本低,具有市场发展前景;
(2)本发明首次采用原位复合的方法制备了新型纳米电极材料FeMn-TiO2/MoS2,该方法主要有三个优势:一是,由于铁、锰在二氧化钛纳米方块上的原位生长而充分与二氧化钛纳米方块接触,利用铁、锰的金属表面等离子体作用以及二者的协同作用,有效阻止了光生电子-空穴对的复合,极大地提高了光催化活性,由于金属离子的作用,拓宽了光敏波长地范围,实现了在可见光区地光电转换,极大地提高了太阳光地利用效率,解决了二维二氧化钛纳米材料虽然光催化效果好,但是在太阳光照射下光催化效果差、光电转换率低的技术问题;二是,由于二硫化钼片状二维纳米材料的负载特性和二氧化钛纳米方块在其上的充分分散,解决了二维二氧化钛纳米材料不利于分散而降低光电转换率的技术问题;三是,由于铁、锰离子在该过程中既作为插层材料又作为反应掺杂材料,最后采用原位复合的方法实现了该复合材料的一锅制备,不但节省了时间、材料损耗,而且使得制备的铁、锰共掺杂的二氧化钛纳米方块能够更好地均匀分散到二硫化钼片状二维纳米材料上面。因此,该材料的有效制备,具有重要的科学意义和应用价值;
(3)本发明制备的纳米电极材料FeMn-TiO2/MoS2,由于光催化活性高、具有高效的光电转化效率,易于成膜,而且自身的生物相容性好、大的比表面积、高的表面介孔吸附特性,可以作为基质材料,制备各类传感器,如光电化学传感器、电致化学发光传感器、电化学传感器等,具有广泛的潜在使用价值。
具体实施方式
实施例1 FeMn-TiO2/MoS2的制备
(1)取0.6 g二硫化钼粉末、0.2 mmol铁盐和0.2 mmol锰盐共同加入到3 mL正丁基锂溶液中,在氮气保护和60 ℃下,搅拌12小时,得到反应后的溶液;
(2)利用非极性溶剂洗涤步骤(1)中反应后的溶液,然后在60 ℃下进行水浴超声处理,处理完后,再利用非极性溶剂洗涤处理后的溶液,真空干燥,得到铁、锰共插层的二硫化钼纳米材料;
(3)取500 mg步骤(2)制得的铁、锰共插层的二硫化钼纳米材料加入到5 mL钛酸四丁酯中,搅拌1小时后,边搅拌边缓慢加入0.5 mL氢氟酸,然后160 ℃下在反应釜中反应18小时;
(4)将步骤(3)所得的反应产物,用超纯水和无水乙醇离心洗涤三次后,50 ℃下真空干燥,即制得FeMn-TiO2/MoS2;
所述的正丁基锂溶液为正丁基锂的己烷溶液,浓度为1.6 mol/L;
所述的铁盐为硫酸铁;
所述的锰盐为硫酸锰;
所述的非极性溶剂为己烷;
所述的水浴超声处理,处理时间为1小时。
实施例2 FeMn-TiO2/MoS2的制备
(1)取0.6 g二硫化钼粉末、1.0 mmol铁盐和1.0 mmol锰盐共同加入到5 mL正丁基锂溶液中,在氮气保护和30 ℃下,搅拌24小时,得到反应后的溶液;
(2)利用非极性溶剂洗涤步骤(1)中反应后的溶液,然后在30 ℃下进行水浴超声处理,处理完后,再利用非极性溶剂洗涤处理后的溶液,真空干燥,得到铁、锰共插层的二硫化钼纳米材料;
(3)取200 mg步骤(2)制得的铁、锰共插层的二硫化钼纳米材料加入到5 mL钛酸四丁酯中,搅拌1小时后,边搅拌边缓慢加入0.6 mL氢氟酸,然后180 ℃下在反应釜中反应20小时;
(4)将步骤(3)所得的反应产物,用超纯水和无水乙醇离心洗涤三次后,50 ℃下真空干燥,即制得FeMn-TiO2/MoS2;
所述的正丁基锂溶液为正丁基锂的己烷溶液,浓度为1.6 mol/L;
所述的铁盐为氯化铁;
所述的锰盐为氯化锰;
所述的非极性溶剂为四氯化碳;
所述的水浴超声处理,处理时间为1小时。
实施例3 FeMn-TiO2/MoS2的光电化学测试
将实施例1所制备的FeMn-TiO2/MoS2溶于水中,制得浓度为 5 mg/mL的FeMn-TiO2/MoS2溶胶,取0.02 mL FeMn-TiO2/MoS2溶胶修饰到ITO电极上,以饱和甘汞电极作为参比电极,铂丝电极作为辅助电极,共同组成三电极系统,连接到光电化学检测设备上;在电解槽中先后加入15mL pH=5.4的Tris–HCl缓冲溶液和5 mL 10 mmol/L的L-抗坏血酸-2-磷酸三钠盐AAP溶液;采用i-t测试手段,测试所得光电流强度,可达到0.2 mA,说明本发明所制备的FeMn-TiO2/MoS2具有实际应用价值。
实施例4 FeMn-TiO2/MoS2的光催化活性测试
将实施例2所制备的FeMn-TiO2/MoS2溶于水中,制得浓度为 5 mg/mL的FeMn-TiO2/MoS2溶胶,取0.02 mL FeMn-TiO2/MoS2溶胶修饰到ITO电极上,以饱和甘汞电极作为参比电极,铂丝电极作为辅助电极,共同组成三电极系统,连接到光电化学检测设备上;在电解槽中先后加入15mL pH=5.4的Tris–HCl缓冲溶液和5 mL 10 mmol/L的L-抗坏血酸-2-磷酸三钠盐AAP溶液;采用i-t测试手段,测试所得光电流强度,可达到0.2 mA,说明本发明所制备的FeMn-TiO2/MoS2具有实际应用价值。
Claims (1)
1.一种双金属共掺杂二维纳米电极材料的制备方法,所述的双金属共掺杂二维纳米电极材料为铁、锰共掺杂二氧化钛纳米方块与二硫化钼原位复合的二维纳米复合材料FeMn-TiO2/MoS2,其特征在于,所述的FeMn-TiO2/MoS2的制备步骤为:
(1)取0.6 g二硫化钼粉末、0.2 ~ 2.0 mmol铁盐和0.2 ~ 2.0 mmol锰盐共同加入到3~10 mL正丁基锂溶液中,在氮气保护和30 ~ 60 ℃下,搅拌12 ~ 48小时,得到反应后的溶液;
(2)利用非极性溶剂洗涤步骤(1)中反应后的溶液,然后在30 ~ 60 ℃下进行水浴超声处理,处理完后,再利用非极性溶剂洗涤处理后的溶液,真空干燥,得到铁、锰共插层的二硫化钼纳米材料;
(3)取10 ~ 500 mg步骤(2)制得的铁、锰共插层的二硫化钼纳米材料加入到5 mL钛酸四丁酯中,搅拌1小时后,边搅拌边缓慢加入0.5 ~ 0.8 mL氢氟酸,然后160~180 ℃下在反应釜中反应18 ~ 20小时;
(4)将步骤(3)所得的反应产物,用超纯水和无水乙醇离心洗涤三次后,50 ℃下真空干燥,即制得FeMn-TiO2/MoS2;
所述的正丁基锂溶液为正丁基锂的己烷溶液,浓度为1.6 mol/L;
所述的铁盐选自下列之一:硫酸铁、氯化铁、硝酸铁、有机铁化合物;
所述的锰盐选自下列之一:硫酸锰、氯化锰、硝酸锰、有机锰化合物;
所述的非极性溶剂选自下列之一:己烷、环己烷、四氯化碳、苯、甲苯;
所述的水浴超声处理,处理时间为1小时。
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