CN110164820B - 处理晶圆的方法 - Google Patents

处理晶圆的方法 Download PDF

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Publication number
CN110164820B
CN110164820B CN201910110077.7A CN201910110077A CN110164820B CN 110164820 B CN110164820 B CN 110164820B CN 201910110077 A CN201910110077 A CN 201910110077A CN 110164820 B CN110164820 B CN 110164820B
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China
Prior art keywords
wafer
protective film
opposite
buffer layer
applying
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Chinese (zh)
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CN110164820A (zh
Inventor
卡尔·海因茨·普利瓦西尔
R·齐默尔曼
星野仁志
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass
    • B23K37/04—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
    • B23K37/0408—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work for planar work
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/52—Ceramics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/54—Glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/7418—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. a chip mounting substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201910110077.7A 2018-02-14 2019-02-11 处理晶圆的方法 Active CN110164820B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018202254.2 2018-02-14
DE102018202254.2A DE102018202254A1 (de) 2018-02-14 2018-02-14 Verfahren zum Bearbeiten eines Wafers

Publications (2)

Publication Number Publication Date
CN110164820A CN110164820A (zh) 2019-08-23
CN110164820B true CN110164820B (zh) 2023-11-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910110077.7A Active CN110164820B (zh) 2018-02-14 2019-02-11 处理晶圆的方法

Country Status (7)

Country Link
US (1) US10727128B2 (https=)
JP (2) JP6962523B2 (https=)
KR (1) KR102351842B1 (https=)
CN (1) CN110164820B (https=)
DE (1) DE102018202254A1 (https=)
SG (1) SG10201900566PA (https=)
TW (1) TWI742343B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017208405B4 (de) * 2017-05-18 2024-05-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzfolie
TWI846849B (zh) 2019-03-27 2024-07-01 日商三井化學東賽璐股份有限公司 保護膜及其貼附方法以及半導體零件的製造方法
JP7341606B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7301480B2 (ja) * 2019-10-17 2023-07-03 株式会社ディスコ ウェーハの加工方法
JP7387228B2 (ja) * 2019-10-17 2023-11-28 株式会社ディスコ ウェーハの加工方法
JP7376322B2 (ja) 2019-11-06 2023-11-08 株式会社ディスコ 樹脂シート固定装置
JP7335136B2 (ja) * 2019-11-06 2023-08-29 株式会社ディスコ 樹脂保護部材形成装置
JP2021077720A (ja) * 2019-11-07 2021-05-20 株式会社ディスコ ウェーハの加工方法
JP7418184B2 (ja) * 2019-11-14 2024-01-19 株式会社ディスコ 保護部材の設置方法、被加工物の加工方法及び保護部材の製造方法
WO2021153120A1 (ja) * 2020-01-29 2021-08-05 Ｊｘ金属株式会社 リン化インジウム基板
JP7582798B2 (ja) * 2020-06-09 2024-11-13 株式会社東京精密 加工装置及び方法
DE102020210104B4 (de) * 2020-08-10 2025-02-06 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7463036B2 (ja) * 2020-08-21 2024-04-08 株式会社ディスコ シート貼着方法及びシート貼着装置
CN114121597B (zh) * 2020-08-31 2025-11-25 矽磐微电子(重庆)有限公司 晶圆贴膜方法
JP7650583B2 (ja) * 2020-12-15 2025-03-25 株式会社ディスコ チップの製造方法
MY198402A (en) * 2020-12-17 2023-08-28 Inari Tech Sdn Bhd A Method For Fabricating Semiconductor Articles And System Thereof
JP7620443B2 (ja) * 2021-02-09 2025-01-23 株式会社ディスコ 保護部材貼着装置及び保護部材の貼着方法
WO2022249889A1 (ja) 2021-05-26 2022-12-01 株式会社ディスコ 裏面研削用粘着シート及び半導体ウエハの製造方法、基材シート
US20240254368A1 (en) 2021-05-26 2024-08-01 Disco Corporation Adhesive sheet for rear surface grinding, semiconductor wafer manufacturing method, and base material sheet
CN115881533A (zh) * 2021-08-12 2023-03-31 江苏鲁汶仪器股份有限公司 一种刻蚀方法
DE102021209979A1 (de) * 2021-09-09 2023-03-09 Disco Corporation Verfahren zur bearbeitung eines substrats
JP7801914B2 (ja) * 2022-03-01 2026-01-19 株式会社ディスコ 保護シートの貼着方法、及び、ウェーハの加工方法
CN115602598A (zh) * 2022-10-11 2023-01-13 北京灵汐科技有限公司（Cn） 支撑系统、晶圆服务器及其制备方法、任务处理方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109433A (ja) * 2004-03-31 2005-04-21 Disco Abrasive Syst Ltd 半導体ウエーハの切削方法および研削用のバンプ保護部材
CN1722371A (zh) * 2004-06-17 2006-01-18 株式会社迪斯科 保护带安装方法及保护带安装装置
JP2007096115A (ja) * 2005-09-29 2007-04-12 Fujitsu Ltd 半導体装置の製造方法
JP2007165636A (ja) * 2005-12-14 2007-06-28 Nippon Zeon Co Ltd 半導体素子の製造方法
JP2008078430A (ja) * 2006-09-22 2008-04-03 Matsushita Electric Ind Co Ltd 電子部品の製造方法
JP2013243223A (ja) * 2012-05-18 2013-12-05 Disco Abrasive Syst Ltd ウエーハ保護部材
CN106409761A (zh) * 2015-08-03 2017-02-15 株式会社迪思科 被加工物的加工方法
JP2017050536A (ja) * 2015-08-31 2017-03-09 株式会社ディスコ ウェハを処理する方法
TW201724231A (zh) * 2015-08-31 2017-07-01 凱爾Ｈ 普瑞渥瑟 處理晶圓的方法及用於該方法的保護片
CN107112256A (zh) * 2014-12-29 2017-08-29 卡尔·海因茨·普利瓦西尔 在处理半导体尺寸晶片中使用的保护片及半导体尺寸晶片处理方法
KR20170114728A (ko) * 2016-04-06 2017-10-16 주식회사 엘지화학 반도체 웨이퍼 표면 보호용 점착 필름
WO2018002035A2 (en) * 2016-06-28 2018-01-04 Karl Heinz Priewasser Method of processing wafer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3957506B2 (ja) * 2001-12-26 2007-08-15 Ｎｅｃエレクトロニクス株式会社 基板表面保護シート貼り付け装置および貼り付け方法
US7186629B2 (en) 2003-11-19 2007-03-06 Advanced Materials Sciences, Inc. Protecting thin semiconductor wafers during back-grinding in high-volume production
JP2006156567A (ja) 2004-11-26 2006-06-15 Sharp Corp 表面保護テープおよび半導体装置の製造方法
JP5356748B2 (ja) * 2008-07-31 2013-12-04 アキレス株式会社 ウエハ研削テープ用基材フィルム
US8252665B2 (en) 2009-09-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Protection layer for adhesive material at wafer edge
JP5623798B2 (ja) 2010-06-10 2014-11-12 株式会社ディスコ サファイア基板の加工方法
JP5393902B2 (ja) * 2011-08-09 2014-01-22 三井化学東セロ株式会社 半導体装置の製造方法およびその方法に用いられる半導体ウエハ表面保護用フィルム
JP6341709B2 (ja) 2014-03-18 2018-06-13 株式会社ディスコ ウェーハの加工方法
US9786643B2 (en) * 2014-07-08 2017-10-10 Micron Technology, Inc. Semiconductor devices comprising protected side surfaces and related methods
US9893116B2 (en) 2014-09-16 2018-02-13 Toshiba Memory Corporation Manufacturing method of electronic device and manufacturing method of semiconductor device
CN104241094A (zh) 2014-10-08 2014-12-24 上海朕芯微电子科技有限公司 一种避免超薄硅片边缘破损的加工方法
JP6560040B2 (ja) 2015-07-06 2019-08-14 株式会社ディスコ ウエーハの加工方法
JP6200611B1 (ja) * 2016-03-17 2017-09-20 古河電気工業株式会社 半導体ウェハ加工用粘着テープ、半導体ウェハ加工用粘着テープの製造方法および半導体ウェハの加工方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109433A (ja) * 2004-03-31 2005-04-21 Disco Abrasive Syst Ltd 半導体ウエーハの切削方法および研削用のバンプ保護部材
CN1722371A (zh) * 2004-06-17 2006-01-18 株式会社迪斯科 保护带安装方法及保护带安装装置
JP2007096115A (ja) * 2005-09-29 2007-04-12 Fujitsu Ltd 半導体装置の製造方法
JP2007165636A (ja) * 2005-12-14 2007-06-28 Nippon Zeon Co Ltd 半導体素子の製造方法
JP2008078430A (ja) * 2006-09-22 2008-04-03 Matsushita Electric Ind Co Ltd 電子部品の製造方法
JP2013243223A (ja) * 2012-05-18 2013-12-05 Disco Abrasive Syst Ltd ウエーハ保護部材
CN107112256A (zh) * 2014-12-29 2017-08-29 卡尔·海因茨·普利瓦西尔 在处理半导体尺寸晶片中使用的保护片及半导体尺寸晶片处理方法
CN106409761A (zh) * 2015-08-03 2017-02-15 株式会社迪思科 被加工物的加工方法
JP2017050536A (ja) * 2015-08-31 2017-03-09 株式会社ディスコ ウェハを処理する方法
TW201724231A (zh) * 2015-08-31 2017-07-01 凱爾Ｈ 普瑞渥瑟 處理晶圓的方法及用於該方法的保護片
KR20170114728A (ko) * 2016-04-06 2017-10-16 주식회사 엘지화학 반도체 웨이퍼 표면 보호용 점착 필름
WO2018002035A2 (en) * 2016-06-28 2018-01-04 Karl Heinz Priewasser Method of processing wafer

Also Published As

Publication number Publication date
JP2019140387A (ja) 2019-08-22
CN110164820A (zh) 2019-08-23
TW201941287A (zh) 2019-10-16
JP2021158383A (ja) 2021-10-07
JP6962523B2 (ja) 2021-11-05
DE102018202254A1 (de) 2019-08-14
KR20190098722A (ko) 2019-08-22
US20190252254A1 (en) 2019-08-15
JP7319017B2 (ja) 2023-08-01
TWI742343B (zh) 2021-10-11
US10727128B2 (en) 2020-07-28
KR102351842B1 (ko) 2022-01-18
SG10201900566PA (en) 2019-09-27

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