JP6962523B2 - ウェハの処理方法 - Google Patents

ウェハの処理方法 Download PDF

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Publication number
JP6962523B2
JP6962523B2 JP2019007860A JP2019007860A JP6962523B2 JP 6962523 B2 JP6962523 B2 JP 6962523B2 JP 2019007860 A JP2019007860 A JP 2019007860A JP 2019007860 A JP2019007860 A JP 2019007860A JP 6962523 B2 JP6962523 B2 JP 6962523B2
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Prior art keywords
wafer
protective film
grinding
along
cushion layer
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Japanese (ja)
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JP2019140387A (ja
Inventor
ハインツ プリーヴァッサー カール
ツィマーマン ローランド
仁志 星野
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Disco Corp
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Disco Corp
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Priority to JP2021106501A priority Critical patent/JP7319017B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass
    • B23K37/04—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
    • B23K37/0408—Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work for planar work
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/52—Ceramics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/54—Glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/7418—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. a chip mounting substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2019007860A 2018-02-14 2019-01-21 ウェハの処理方法 Active JP6962523B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021106501A JP7319017B2 (ja) 2018-02-14 2021-06-28 ウェハの処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018202254.2 2018-02-14
DE102018202254.2A DE102018202254A1 (de) 2018-02-14 2018-02-14 Verfahren zum Bearbeiten eines Wafers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021106501A Division JP7319017B2 (ja) 2018-02-14 2021-06-28 ウェハの処理方法

Publications (2)

Publication Number Publication Date
JP2019140387A JP2019140387A (ja) 2019-08-22
JP6962523B2 true JP6962523B2 (ja) 2021-11-05

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019007860A Active JP6962523B2 (ja) 2018-02-14 2019-01-21 ウェハの処理方法
JP2021106501A Active JP7319017B2 (ja) 2018-02-14 2021-06-28 ウェハの処理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021106501A Active JP7319017B2 (ja) 2018-02-14 2021-06-28 ウェハの処理方法

Country Status (7)

Country Link
US (1) US10727128B2 (https=)
JP (2) JP6962523B2 (https=)
KR (1) KR102351842B1 (https=)
CN (1) CN110164820B (https=)
DE (1) DE102018202254A1 (https=)
SG (1) SG10201900566PA (https=)
TW (1) TWI742343B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017208405B4 (de) * 2017-05-18 2024-05-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzfolie
TWI846849B (zh) 2019-03-27 2024-07-01 日商三井化學東賽璐股份有限公司 保護膜及其貼附方法以及半導體零件的製造方法
JP7341606B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP7301480B2 (ja) * 2019-10-17 2023-07-03 株式会社ディスコ ウェーハの加工方法
JP7387228B2 (ja) * 2019-10-17 2023-11-28 株式会社ディスコ ウェーハの加工方法
JP7376322B2 (ja) 2019-11-06 2023-11-08 株式会社ディスコ 樹脂シート固定装置
JP7335136B2 (ja) * 2019-11-06 2023-08-29 株式会社ディスコ 樹脂保護部材形成装置
JP2021077720A (ja) * 2019-11-07 2021-05-20 株式会社ディスコ ウェーハの加工方法
JP7418184B2 (ja) * 2019-11-14 2024-01-19 株式会社ディスコ 保護部材の設置方法、被加工物の加工方法及び保護部材の製造方法
WO2021153120A1 (ja) * 2020-01-29 2021-08-05 Ｊｘ金属株式会社 リン化インジウム基板
JP7582798B2 (ja) * 2020-06-09 2024-11-13 株式会社東京精密 加工装置及び方法
DE102020210104B4 (de) * 2020-08-10 2025-02-06 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7463036B2 (ja) * 2020-08-21 2024-04-08 株式会社ディスコ シート貼着方法及びシート貼着装置
CN114121597B (zh) * 2020-08-31 2025-11-25 矽磐微电子(重庆)有限公司 晶圆贴膜方法
JP7650583B2 (ja) * 2020-12-15 2025-03-25 株式会社ディスコ チップの製造方法
MY198402A (en) * 2020-12-17 2023-08-28 Inari Tech Sdn Bhd A Method For Fabricating Semiconductor Articles And System Thereof
JP7620443B2 (ja) * 2021-02-09 2025-01-23 株式会社ディスコ 保護部材貼着装置及び保護部材の貼着方法
WO2022249889A1 (ja) 2021-05-26 2022-12-01 株式会社ディスコ 裏面研削用粘着シート及び半導体ウエハの製造方法、基材シート
US20240254368A1 (en) 2021-05-26 2024-08-01 Disco Corporation Adhesive sheet for rear surface grinding, semiconductor wafer manufacturing method, and base material sheet
CN115881533A (zh) * 2021-08-12 2023-03-31 江苏鲁汶仪器股份有限公司 一种刻蚀方法
DE102021209979A1 (de) * 2021-09-09 2023-03-09 Disco Corporation Verfahren zur bearbeitung eines substrats
JP7801914B2 (ja) * 2022-03-01 2026-01-19 株式会社ディスコ 保護シートの貼着方法、及び、ウェーハの加工方法
CN115602598A (zh) * 2022-10-11 2023-01-13 北京灵汐科技有限公司（Cn） 支撑系统、晶圆服务器及其制备方法、任务处理方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3957506B2 (ja) * 2001-12-26 2007-08-15 Ｎｅｃエレクトロニクス株式会社 基板表面保護シート貼り付け装置および貼り付け方法
US7186629B2 (en) 2003-11-19 2007-03-06 Advanced Materials Sciences, Inc. Protecting thin semiconductor wafers during back-grinding in high-volume production
JP2005109433A (ja) * 2004-03-31 2005-04-21 Disco Abrasive Syst Ltd 半導体ウエーハの切削方法および研削用のバンプ保護部材
JP4387879B2 (ja) * 2004-06-17 2009-12-24 株式会社ディスコ 保護テープ装着方法および保護テープ装着装置
JP2006156567A (ja) 2004-11-26 2006-06-15 Sharp Corp 表面保護テープおよび半導体装置の製造方法
JP2007096115A (ja) * 2005-09-29 2007-04-12 Fujitsu Ltd 半導体装置の製造方法
JP4930679B2 (ja) * 2005-12-14 2012-05-16 日本ゼオン株式会社 半導体素子の製造方法
JP5151104B2 (ja) * 2006-09-22 2013-02-27 パナソニック株式会社 電子部品の製造方法
JP5356748B2 (ja) * 2008-07-31 2013-12-04 アキレス株式会社 ウエハ研削テープ用基材フィルム
US8252665B2 (en) 2009-09-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Protection layer for adhesive material at wafer edge
JP5623798B2 (ja) 2010-06-10 2014-11-12 株式会社ディスコ サファイア基板の加工方法
JP5393902B2 (ja) * 2011-08-09 2014-01-22 三井化学東セロ株式会社 半導体装置の製造方法およびその方法に用いられる半導体ウエハ表面保護用フィルム
JP2013243223A (ja) * 2012-05-18 2013-12-05 Disco Abrasive Syst Ltd ウエーハ保護部材
JP6341709B2 (ja) 2014-03-18 2018-06-13 株式会社ディスコ ウェーハの加工方法
US9786643B2 (en) * 2014-07-08 2017-10-10 Micron Technology, Inc. Semiconductor devices comprising protected side surfaces and related methods
US9893116B2 (en) 2014-09-16 2018-02-13 Toshiba Memory Corporation Manufacturing method of electronic device and manufacturing method of semiconductor device
CN104241094A (zh) 2014-10-08 2014-12-24 上海朕芯微电子科技有限公司 一种避免超薄硅片边缘破损的加工方法
CN113921447A (zh) * 2014-12-29 2022-01-11 株式会社迪思科 保护片、保护片布置、半导体尺寸晶片的处理系统和方法
JP6560040B2 (ja) 2015-07-06 2019-08-14 株式会社ディスコ ウエーハの加工方法
JP2017034128A (ja) * 2015-08-03 2017-02-09 株式会社ディスコ 被加工物の加工方法
DE102015216619B4 (de) * 2015-08-31 2017-08-10 Disco Corporation Verfahren zum Bearbeiten eines Wafers
US11437275B2 (en) * 2015-08-31 2022-09-06 Disco Corporation Method of processing wafer and protective sheeting for use in this method
JP6200611B1 (ja) * 2016-03-17 2017-09-20 古河電気工業株式会社 半導体ウェハ加工用粘着テープ、半導体ウェハ加工用粘着テープの製造方法および半導体ウェハの加工方法
KR102040252B1 (ko) * 2016-04-06 2019-11-04 주식회사 엘지화학 반도체 웨이퍼 표면 보호용 점착 필름
GB2551732B (en) * 2016-06-28 2020-05-27 Disco Corp Method of processing wafer

Also Published As

Publication number Publication date
JP2019140387A (ja) 2019-08-22
CN110164820A (zh) 2019-08-23
TW201941287A (zh) 2019-10-16
JP2021158383A (ja) 2021-10-07
DE102018202254A1 (de) 2019-08-14
KR20190098722A (ko) 2019-08-22
CN110164820B (zh) 2023-11-14
US20190252254A1 (en) 2019-08-15
JP7319017B2 (ja) 2023-08-01
TWI742343B (zh) 2021-10-11
US10727128B2 (en) 2020-07-28
KR102351842B1 (ko) 2022-01-18
SG10201900566PA (en) 2019-09-27

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