CN110036489B - 氮化物类电子器件及其制造方法 - Google Patents

氮化物类电子器件及其制造方法 Download PDF

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CN110036489B
CN110036489B CN201780073634.1A CN201780073634A CN110036489B CN 110036489 B CN110036489 B CN 110036489B CN 201780073634 A CN201780073634 A CN 201780073634A CN 110036489 B CN110036489 B CN 110036489B
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protective layer
nitride
electronic device
based electronic
electrode
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CN110036489A (zh
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李相玟
丘璜燮
金铉济
郑熙锡
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Wavice Inc
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Abstract

本发明涉及一种氮化物类电子器件及其制造方法，氮化物类电子器件包括基板、金属的电极以及多个保护层，在所述保护层中，以使所述电极的上侧的局部不露出的方式覆盖所述电极的局部的至少两个保护层中，以使下侧的保护层的端部不露出的方式上侧的保护层覆盖下侧的保护层的端部。

Description

氮化物类电子器件及其制造方法
技术领域
本发明涉及一种氮化物类电子器件及其制造方法，更具体而言涉及一种能够提高稳定性及可靠性的氮化物类电子器件及其制造方法。
背景技术
通常，与Si、GaAs那种常规半导体材料相比，氮化物类电子器件具有较宽的能带隙，热稳定性及化学稳定性高，并具有高的电子饱和速度。从而，已知适用于高频、高输出领域。
氮化物类电子器件通过层积异质氮化物层即通道层和阻隔层而在接合面处产生较大的能带不连续性，能够通过较大的能带不连续性而产生高浓度的电子，从而能够提高电子迁移率。
具有这种特性的氮化物类电子器件通常使用树脂膜来防止水分渗透，但是湿气及温度变化可能会带来树脂膜的体积变化，这样的树脂膜体积变化可能会导致下侧氮化物类保护层的局部脱落。
水分会从保护层的脱落部分渗入，水分渗入容易导致金属电极板的表面氧化，其可能会降低使用高电压的氮化物类电子器件的稳定性及可靠性。
尤其，具有当如下结构的高电子迁移率晶体管(HEMT)时湿气容易向漏电极板侧进入的结构，该高电子迁移率晶体管(HEMT)的结构为：源电极板在基板背面侧形成通孔(Via)以连接外部电极，通过层积的钝化层和树脂膜中形成的开口部而使得漏电极板的上表面露出并连接外部电极。
日本公开特许公报2014-220463号(2014年11月20日公开，半导体装置)中公开了提高耐湿性的半导体装置的结构，尤其，详细公开了能够阻断湿气从漏极的上表面侧进入的结构。
根据上述公开专利的图6的(b)及(c)的结构可知那样，其具有如下结构：通过在漏电极板的上侧覆盖保护层和树脂膜并形成开口部来露出漏电极板上侧的局部，并且所述保护层的端部在漏电极板的上侧露出。
如上结构即便在树脂膜中形成与漏电极板的露出无关的开口部以防止树脂膜的体积变化带来的保护层脱落，微量水分可能还会通过薄膜之间缝隙进入，由此可能会降低器件的稳定性及可靠性。
另外，在形成用于露出漏电极板的开口部和用于防止保护层脱落的开口部时，存在因蚀刻停止层(etch stop)差异而实质上非常难以同时形成功能不同的两个开口部的问题。即，用于露出漏电极板的开口部的蚀刻停止层是金属即漏电极板，用于防止保护层脱落的开口部的蚀刻停止层是氮化物保护层，因此其工艺并不容易，由此需要通过额外的光蚀刻工艺来分别形成两个开口部，从而存在工艺步骤增加的问题。
发明内容
发明要解决的问题
考虑到如上问题的本发明所要解决的技术问题在于，提供一种用于提高耐湿性的氮化物类电子器件的结构及其制造方法。
另外，本发明所要解决的另一技术问题在于，提供一种能够提高耐湿性且防止工艺步骤增加的氮化物类电子器件及其制造方法。
另外，本发明所要解决的另一技术问题在于，提供一种不仅能够通过漏电极板的上侧还能够通过氮化物类电子器件的边缘部分端部来防止湿气进入的氮化物类电子器件及其制造方法。
解决问题的方案
用于解决如上所述问题的本发明的一方面提供一种氮化物类电子器件，在包括基板、金属的电极以及多个保护层氮化物类电子器件中，在所述保护层中，以使所述电极的上侧的局部露出的方式覆盖所述电极的局部的至少两个保护层中，以使下侧的保护层的端部不露出的方式上侧的保护层覆盖下侧的保护层的端部。
根据本发明的一实施例，可以是，在以彼此接触的方式层积所述保护层的芯片级侧面部中，位于上侧的保护层覆盖位于下侧的保护层的端部，使得所述位于下侧的保护层的端部不露出。
根据本发明的一实施例，所述保护层中最上层的保护层可以是疏水性树脂材料。
根据本发明的一实施例，所述疏水性树脂材料可以是BCB(苯并环丁烯，BenzoCycloButene)。
根据本发明的一实施例，所述电极至少可以是漏电极板，并且可以包括场板。
另外，根据本发明的另一方面提供一种氮化物类电子器件的制造方法，在基板的上侧依次形成通道层、阻隔层，并且交替形成保护层和电极，所述保护层中可以包含形成于电极的上侧周边部的至少两个保护层，以所述两个保护层中的下侧的保护层的端部位于所述电极的上侧的方式进行图案化，以所述两个保护层中上侧的保护层覆盖所述下侧的保护层的端部来使所述下侧的保护层的端部不露出的方式进行图案化。
根据本发明的一实施例，所述保护层在芯片级的侧面部分别直接接触而层积，以位于上侧的保护层覆盖位于下侧的保护层的端部的方式进行图案化。
根据本发明的一实施例，所述保护层中位于最上层的保护层可以是涂布BCB(苯并环丁烯，BenzoCycloButene)并进行图案化来形成。
根据本发明的一实施例，所述电极至少可以是漏电极板，并且可以选择性地还包括场板。
发明效果
根据本发明的氮化物电子器件及其制造方法，在使用多个钝化层及树脂层的结构中，使得位于上侧的层覆盖位于下侧的层两端部以使端部不露出，从而具有防止层之间区域露出以提高耐湿性的效果。
另外，本发明并不形成用于提高耐湿性的额外开口部，因此具有能够防止工艺步骤增加的效果。
另外，本发明不仅在电极板的上表面防止层之间区域露出还在整体结构中防止层之间区域露出，从而具有能够进一步提高耐湿性的效果。
附图说明
图1是根据本发明的第一实施例的氮化物类电子器件的局部剖面结构图。
图2a至图2d是根据本发明的第一实施例的氮化物类电子器件的制造工艺步骤剖面图。
图3是根据本发明的第二实施例的氮化物类电子器件的局部剖面结构图。
图4a至图4d是根据本发明的第二实施例的氮化物类电子器件的制造工艺步骤剖面图。
<附图中主要部分的附图标记说明>
11：基板；12：通道层；13：阻隔层；14：第一保护层；20：漏电极；30：第二保护层；40：漏电极板；50：第三保护层；60：第四保护层；70：源电极；80：栅电极；90：场板。
具体实施方式
下面，参考附图详细说明本发明的氮化物类电子器件及其制造方法。尤其，在为了清楚地显示本发明的特征构成和作用而进行说明的附图中，有时只示出氮化物类电子器件的一部分。
另外，在本发明中，为了便于说明，以氮化物类电子器件的一例即高电子迁移率晶体管(HEMT)的结构作为例子进行说明，但是本发明并不仅限于高电子迁移率晶体管制造。
本发明的实施例是用于向本技术领域中具有公知常识的人更加完整地说明本发明，以下说明的实施例可变换成多种不同形式，本发明的范围并不限于以下实施例。相反，提供这些实施例是为了使本发明更加充实并完整，并且向本领域技术人员完整地传递本发明的构想。
本说明书中所使用的术语是用于说明特定的实施例，并不是用于限定本发明。如本说明书中所使用那样，除非在文脉上明确指出其他情况，单数形式还可以包括多数形式。另外，在本说明书中，“包括(comprise)”及/或“包含(comprising)”是特指存在所提及的形状、数字、步骤、动作、部件、构成要素及/或它们组合，并非排除存在或添加一个以上的其他形状、数字、动作、部件、构成要素和/或它们组合。如本说明书中所使用那样，术语“及/或”包括相应例举的项目中任意的一个以及一个以上的所有组合。
本说明书中，第一、第二等术语是用于说明多种部件、区域及/或部位，但是不言自明，这些部件、配件、区域、层及/或部位并不限于这些术语。这些术语并不意指特定顺序、上下或者优劣，是用于将一个部件、区域或部位区分于其他部件、区域或部位。因此，在不脱离本发明的教导下，下面所叙述的第一部件、区域或部位还可以指代第二部件、区域或者部位。
下面，将参考概略示出本发明实施例的附图来说明本发明的实施例。在附图中，例如，可根据制造技术及/或公差来预期所示形状的变形。因此，本发明的实施例不应被解释为仅限于本说明书所示区域的特定形状，应包括如制造上带来的形状变化。
第一实施例
图1是根据本发明的第一实施例的氮化物类电子器件的局部剖面结构图。
如图1所示，根据第一实施例的氮化物类电子器件包括：基板11；通道层12，形成于上述基板11的上侧(上部)；阻隔层13，形成于上述通道层12的上侧(上部)；第一保护层14，在上述阻隔层13的上侧使得阻隔层13的局部区域露出；漏电极20，位于通过上述第一保护层14而露出的阻隔层13上；第二保护层30，以覆盖上述第一保护层14的整个上侧和上述漏电极20的上面周边部的局部的方式配置；漏电极板40，位于上述漏电极20的上面和第二保护层30中上述漏电极20的上侧周边处的局部之上；第三保护层50，覆盖上述第二保护层30的上侧表面和上述漏电极板40的上表面周边局部；第四保护层60，覆盖上述第三保护层50的上侧，并且以使第三保护层50的端部不露出的方式配置至上述漏电极板40的上面周边部的局部。
以上结构只显示氮化物类电子器件的一例，即只显示高电子迁移率晶体管的漏极部分。
其中，基板11可以使用SiC、蓝宝石(sapphire)等公知材料，通道层12是GaN等氮化物类半导体层，阻隔层13是AlGaN等氮化物类半导体层。此时，通道层12和阻隔层13是彼此不同的氮化物类半导体层。
在上述阻隔层13的上侧配置有第一保护层14。第一保护层14在局部形成有开口部，以使阻隔层13的漏极区域处的局部露出。第一保护层14可以使用SiN等氮化物半导体层。
与通过上述第一保护层14的开口部而露出的阻隔层13相接触的漏电极20位于上述第一保护层14的开口部。上述漏电极20是金属层，虽在附图中省略，但是与源电极一起形成。形成漏电极20的方法可以使用剥离(lift off)方法。
然后，第二保护层30以使上述漏电极20的上面中央部露出的方式，从漏电极20的上面周边部配置至上述第一保护层14的整个上面。在此，整个上面可以是限于图1的结构中的表述。第二保护层30也可以使用氮化物半导体层。
此时，第一保护层14与漏电极20的侧面相接触，第二保护层30延伸至漏电极20的上面周边部，从而使第一保护层14的端部和第二保护层30的端部位于彼此不同的位置。
具有如下特征，即与第一保护层14的端部相比，第二保护层30的端部位于在附图上向漏电极20的垂直方向中心c更靠近d1，第二保护层30的整体面积也更宽。
然后，在漏电极20的通过第二保护层30露出的上面中央配置有相接触的漏电极板40。虽在附图中省略，但是漏电极板40可与场板同时形成，或者可通过与场板不同的工艺来形成。
然后，在第二保护层30的整个上面和漏电极板40的上面周边部局部上配置有第三保护层50。第三保护层50也可以使用氮化物半导体层，与第二保护层30的端部相比，第三保护层50的端部位于向上述漏电极20的垂直方向中心c更靠近d2。
从而，整体上形成如下结构：第三保护层50完全覆盖第二保护层30，第二保护层30完全覆盖第一保护层14。
最后，第四保护层60配置成覆盖第三保护层50的整个上侧面以及端部。即，形成如下结构：第四保护层60配置至漏电极板40的上面的周边部以覆盖上述第三保护层50的端部，只露出漏电极板40的中央局部。从而，与第三保护层50的端部相比，第四保护层60的端部位于更靠近漏电极20的垂直方向中心c。
第四保护层60可以是树脂材料，尤其为了提高耐湿性，可以使用疏水性且与下侧层之间紧贴性优异的材料。作为满足这些条件的材料，可以例举BCB(苯并环丁烯，BenzoCycloButene)。
上述第四保护层60为包含向上述漏电极板40的上侧周边部侧弯折的弯折部61的构成，可通过上述弯折部61防止第四保护层60和第三保护层50之间区域以及第三保护层50的端部露出，由此阻断水分进入。
如此，本发明以上侧的保护层完全覆盖下侧的保护层的方式进行层积，能够防止湿气进入。
图2a至图2d是根据本发明的第一实施例的氮化物类电子器件的制造工艺步骤剖面图。
如图2a所示，在基板11的上侧依次形成通道层12、阻隔层13，在阻隔层13的上侧蒸镀第一保护层14后，选择性地蚀刻一部分，从而露出阻隔层13的上侧的局部。
此时，阻隔层13的露出部分成为漏极区域。
然后，如图2b所示，通过剥离(lift off)方法形成漏电极20，该漏电极20位于在上述第一保护层14之间露出的阻隔层13的上侧。
然后，在上述漏电极20和第一保护层14的整个上面蒸镀第二保护层30，通过光蚀刻工艺去除第二保护层30的局部，由此露出上述漏电极20的上侧中央部。
此时，去除的第二保护层30是位于漏电极20的上侧中央部的部分，因此第二保护层30沿着漏电极20的上侧面边缘配置。
然后，如图2c所示，形成与上述漏电极20的露出部分相接触的漏电极板40。关于上述漏电极板40，可选择性地使用在镀层、剥离、镀敷后进行图案化的方法等能够形成金属图案层的所有方法。
然后，将第三保护层50蒸镀在上述漏电极板40以及第二保护层30的整个上面，形成使上述漏电极板40的上侧中央部露出的图案。
此时，与第二保护层30的端部相比，第三保护层50的作为蚀刻面的端部构成向上述漏电极板40的中央侧更凸出的形态。
然后，如图2d所示，在图2c的形成物的整个上面涂布树脂并进行图案化，从而形成覆盖上述第三保护层50的端部并使漏电极板40的上面中央部露出的第四保护层60。
上述第四保护层60通过涂布与下侧层紧贴性优异且具有疏水性的BCB来形成，防止与下侧层之间交界部分以及下侧层的端部露出，从而能够防止湿气进入。
第二实施例
图3是根据本发明的第二实施例的氮化物类电子器件的剖面结构图。
参考图3，与示出第一实施例的图1不同，根据本发明的第二实施例的氮化物类电子器件还包括有源电极70、栅电极80以及场板90。
图3示出如下结构：在本发明的特征结构即多个保护层的层积结构中，完全覆盖位于各自下侧的保护层的上侧保护层结构并不局限于漏电极板。
可理解为，与上述源电极70的上侧相接触并向位于栅电极80的上侧的第三保护层50的上侧延伸的场板90同时起到源电极板(附图中并未划分)的作用。
与上述漏电极板60类似，也可以在上述场板90的上侧层积第三保护层50和第四保护层60，场板90的上面中央部露出以便将外部电极连接于场板90。
此时，位于上述场板90的上侧的第四保护层60同样构成完全覆盖第三保护层50的端部以防止露出的结构，与上述详细说明的漏电极20的形成区域相同，源电极70以及场板90的形成区域也具有依次层积第一保护层14、第二保护层30、第三保护层50、第四保护层60的结构，上侧的保护层与其下侧的保护层相比，向更靠近源电极70的中央侧的方向凸出。
在图3中，A区域是晶片级上与器件之间交界部相邻的区域，后续通过切割基板11来构成芯片级的侧面部。实际上，氮化物类电子器件的芯片级侧面部包括多个源电极70、漏电极20、栅电极80，具有非常复杂的结构，但是可以理解为在图3中将其简化示出。
在图3中，A区域是以第一保护层14、第二保护层30、第三保护层50以及第四保护层60直接接触的方式依次层积的结构，尤其需要注意的是如下层积的结构：第一保护层14的端部是通过第二保护层30覆盖来防止露出，第二保护层30的端部是通过第三保护层50覆盖来防止露出。
另外，第三保护层50的端部是通过树脂材料即第四保护层60覆盖来防止露出，从而阻断湿气从氮化物类电子器件的侧面部进入。
形成上述第一保护层14、第二保护层30、第三保护层50以及第四保护层60的局部与阻隔层13直接接触的结构，能够阻断湿气从氮化物类电子器件的侧面部进入。
图4a至图4d是根据本发明的第二实施例的氮化物类电子器件的制造工艺步骤剖面图。
参考图4a，如基板11所示，在基板11的上侧依次形成通道层12、阻隔层13，在阻隔层13的上侧蒸镀第一保护层14后选择性蚀刻局部，露出阻隔层13的上侧的局部。
此时，阻隔层13的露出部分构成漏极区域以及源电极区域。
另外，通过去除第一保护层14的位于芯片级的氮化物类电子器件侧面部的局部来露出第一保护层14的端部。
然后，如图4b所示，在阻隔层13的通过上述第一保护层14的蚀刻而成的区域露出的上侧，通过剥离(lift off)方法形成漏电极20以及源电极70。
然后，通过蚀刻第一保护层14的位于上述漏电极20和源电极70之间的局部来露出其下侧的阻隔层13后，形成与阻隔层13的露出部分相接触的栅电极80。
然后，在上述漏电极20、源电极70、栅电极80以及第一保护层14的整个上面层积第二保护层30，并通过光蚀刻工艺去除第二保护层30的局部，从而露出上述漏电极20以及源电极70的上侧中央部，并且覆盖第一保护层14的在芯片级的氮化物类电子器件侧面部露出的端部而使其不露出。
然后，如图4c所示，形成分别接触于源电极70和漏电极20的露出部分的场板90和漏电极板40。关于上述场板90和漏电极板40，可选择性地使用在镀层、剥离、蒸镀后进行图案化的方法等能够形成金属图案层的所有方法。
然后，将第三保护层50蒸镀在场板90、漏电极板40以及第二保护层30的整个上面，形成使场板90和漏电极板40的上侧中央部露出的图案，覆盖第二保护层30的在芯片级氮化物类电子器件侧面部露出的端部而使其不露出。
此时，与第二保护层30的端部相比，第三保护层50的蚀刻面即端部构成向上述漏电极板40的中央侧以及场板90的中央侧更凸出的形态。
然后，如图4d所示，在图4c的形成物的整个上面涂布树脂并进行图案化，从而覆盖第三保护层50的位于场板90和漏电极板40上侧的端部，并且覆盖第三保护层50的在芯片级氮化物类电子器件侧面部露出的端部而防止其露出。
上述第四保护层60通过涂布与下侧层紧贴性优异且具有疏水性的BCB来形成，防止与下侧层之间交界部分以及下侧层的端部露出，从而能够防止湿气进入。
本发明并不限于上述实施例，在不脱离本发明的技术主旨的范围内可实施各种修改、变形，其对于本发明所属技术领域中具有公知常识的人而言是不言自明的。
工业可应用性
本发明提供一种能够提高稳定性及可靠性的氮化物类电子器件及其制造方法。

Claims (8)

1.一种氮化物类电子器件，所述氮化物类电子器件包括基板、金属的电极以及多个保护层，其中，
在所述多个保护层中，以只使所述电极的上侧的中央局部露出的方式覆盖所述电极的上面周边部的至少两个保护层中，以使下侧的保护层的覆盖所述电极的上面周边部的一侧的端部不露出的方式上侧的保护层覆盖所述下侧的保护层的覆盖所述电极的上面周边部的一侧的端部，
在以彼此接触的方式层积所述保护层的芯片级侧面部中，
所述保护层的端面部与阻隔层直接接触，并且位于上侧的保护层覆盖位于下侧的保护层的端部，使得所述位于下侧的保护层的端部不露出。
2.根据权利要求1所述的氮化物类电子器件，其中，
在芯片级侧面部之间分别配置一个或者两个以上的作为所述电极的源电极、栅电极、漏电极。
3.根据权利要求1或2所述的氮化物类电子器件，其中，
所述保护层中最上层的保护层是疏水性树脂材料。
4.根据权利要求3所述的氮化物类电子器件，其中，
所述疏水性树脂材料是BCB。
5.根据权利要求1所述的氮化物类电子器件，其中，
所述电极至少是漏电极板，并且包括场板。
6.一种氮化物类电子器件的制造方法，在基板的上侧依次形成通道层、阻隔层，并且交替形成保护层和电极，其中，
所述保护层中包含以只使所述电极的上侧的中央局部露出的方式形成于所述电极的上侧周边部的至少两个保护层，
以所述两个保护层中的下侧的保护层的端部位于所述电极的上侧的方式进行图案化，
以所述两个保护层中的上侧的保护层覆盖所述下侧的保护层的所述电极的上侧的一侧的端部来使所述下侧的保护层的端部不露出的方式进行图案化，
所述保护层在芯片级的侧面部分别直接接触而层积，
所述保护层的端面部与所述阻隔层直接接触，以位于上侧的保护层覆盖位于下侧的保护层的端部的方式进行图案化。
7.根据权利要求6所述的氮化物类电子器件的制造方法，其中，
所述保护层中位于最上层的保护层是通过涂布BCB并进行图案化来形成。
8.根据权利要求6所述的氮化物类电子器件的制造方法，其中，
所述电极至少是漏电极板，并且选择性地还包括场板。
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