CN110024118A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN110024118A
CN110024118A CN201680090969.XA CN201680090969A CN110024118A CN 110024118 A CN110024118 A CN 110024118A CN 201680090969 A CN201680090969 A CN 201680090969A CN 110024118 A CN110024118 A CN 110024118A
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case electrode
shell
press section
semiconductor chip
semiconductor device
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大串直弘
田口晃一
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

壳体(6)将半导体芯片(5)包围。壳体电极(7)安装于壳体(6)的上表面。导线(8)与半导体芯片(5)和壳体电极(7)连接。第1按压部(10)在相比于壳体电极(7)的与导线(8)接合的接合部分更靠外侧处，将壳体电极(7)按压于壳体(6)的上表面。第2按压部(11)在与接合部分相比更靠内侧处，将壳体电极(7)按压于壳体(6)的上表面。在壳体(6)的上表面设置有凹部(12)。壳体电极(7)被以进入凹部(12)的方式弯折加工。第2按压部(11)配置于凹部(12)内。

Description

半导体装置
技术领域
本发明涉及将导线接合至壳体电极的半导体装置，特别地涉及能够使导线接合性提高，并且降低导线的高度的半导体装置。
背景技术
就电力变换用半导体装置而言，通过超声波接合等将导线接合至壳体电极。为了使导线接合性提高，壳体电极需要牢固地固定至壳体。作为现有技术，存在将壳体电极嵌入成形的方式(例如，参照专利文献1(实施方式3，图25～28)或者专利文献2(实施方式1，图5))。
专利文献1：日本特开2009-21286号公报
专利文献2：日本特开2009-130007号公报
发明内容
仅依靠将壳体电极嵌入成形，固定不充分。因此，夹着导线接合部分而在内侧与外侧对壳体电极进行保持。但是，需要增高导线高度，以使得导线不与在接合部分的内侧对壳体电极进行按压的按压部接触。因此，在壳体内的构造物中导线最高的情况下，需要与导线高度相匹配地注入封装材料。因此，存在半导体装置的厚度、重量以及成本增加的问题。
本发明就是为了解决如上述的课题而提出的，其目的在于得到能够使导线接合性提高，并且降低导线的高度的半导体装置。
本发明涉及的半导体装置，其特征在于，具备：半导体芯片；
壳体，其将所述半导体芯片包围；壳体电极，其安装于所述壳体的上表面；导线，其与所述半导体芯片、所述壳体电极连接；第1按压部，其在相比于所述壳体电极的与所述导线接合的接合部分更靠外侧处，将所述壳体电极按压于所述壳体的所述上表面；以及第2按压部，其在与所述接合部分相比更靠内侧处，将所述壳体电极按压于所述壳体的所述上表面，在所述壳体的所述上表面设置有凹部，所述壳体电极被以进入所述凹部的方式弯折加工，所述第2按压部配置于所述凹部内，所述第2按压部的上表面的高度不高于除了所述凹部以外的所述壳体电极的上表面。
发明的效果
就本发明而言，通过第1按压部和第2按压部对壳体电极的两端进行按压，由此能够将壳体电极牢固地固定至壳体，因此能够使导线接合性提高。另外，通过将第2按压部配置于壳体的上表面的凹部内，从而能够使第2按压部的上表面的高度不高于除了凹部以外的壳体电极的上表面，因此能够降低导线的高度。
附图说明
图1是表示本发明的实施方式1涉及的半导体装置的剖面图。
图2是表示本发明的实施方式1涉及的壳体电极的俯视图。
图3是表示本发明的实施方式2涉及的半导体装置的剖面图。
图4是表示本发明的实施方式3涉及的半导体装置的剖面图。
图5是表示本发明的实施方式4涉及的半导体装置的剖面图。
图6是表示本发明的实施方式5涉及的半导体装置的剖面图。
图7是表示本发明的实施方式5涉及的壳体电极的俯视图。
图8是表示本发明的实施方式6涉及的半导体装置的剖面图。
图9是表示本发明的实施方式6涉及的壳体电极的俯视图。
图10是表示本发明的实施方式7涉及的半导体装置的剖面图。
图11是表示本发明的实施方式7涉及的壳体电极的俯视图以及剖面图。
图12是表示本发明的实施方式8涉及的半导体装置的剖面图。
图13是将本发明的实施方式8涉及的第2按压部放大后的剖面图。
图14是表示本发明的实施方式9涉及的半导体装置的剖面图。
图15是表示本发明的实施方式9涉及的壳体电极的俯视图。
具体实施方式
参照附图对本发明的实施方式涉及的半导体装置进行说明。对相同或相应的结构要素标注相同的标号，有时省略重复说明。
实施方式1.
图1是表示本发明的实施方式1涉及的半导体装置的剖面图。图2是表示本发明的实施方式1涉及的壳体电极的俯视图。在绝缘基板1的下表面设置有下表面电极2，在上表面设置有基座板3。在基座板3之上经由焊料4设置有半导体芯片5。
在基座板3之上壳体6将半导体芯片5包围。壳体电极7安装于壳体6的上表面。导线8与半导体芯片5、壳体电极7连接。在壳体6内，半导体芯片5和导线8由封装材料9封装。
第1按压部10在相比于壳体电极7的与导线8接合的接合部分更靠外侧处，将壳体电极7按压于壳体6的上表面。第2按压部11在与接合部分相比更靠内侧处将壳体电极7按压于壳体6的上表面。第1按压部10和第2按压部11由与壳体6相同的材料即壳体树脂形成。
在壳体6的上表面的内侧角部设置有凹部12。壳体电极7被以进入凹部12的方式弯折加工。第2按压部11配置于凹部12内。第2按压部11的上表面的高度不高于壳体电极7的接合部分的上表面。
通过第1按压部10和第2按压部11而对壳体电极7的两端进行按压，由此能够将壳体电极7牢固地固定至壳体6，因此能够使导线接合性提高。另外，通过在壳体6的上表面的凹部12内配置第2按压部11，从而能够使第2按压部11的上表面的高度变低，因此能够降低导线8的高度。其结果，能够缓和半导体装置的厚度方向的限制，使尺寸变小，并且降低重量和成本。
实施方式2.
图3是表示本发明的实施方式2涉及的半导体装置的剖面图。凹部12相对于壳体6的内端面位于外侧，与该内端面分离。由此，能够确保半导体芯片5与壳体电极7之间的沿面距离。其它的结构以及效果与实施方式1相同。
实施方式3.
图4是表示本发明的实施方式3涉及的半导体装置的剖面图。在壳体电极7的被进行了弯折加工的部分设置有贯穿孔13。在由壳体树脂形成第2按压部11时，壳体树脂变得容易经由贯穿孔13而漫入至第2按压部11。其它的结构以及效果与实施方式2相同。此外，在实施方式2的结构的基础上追加有贯穿孔13，但也可以在实施方式1的结构的基础上追加有贯穿孔13。
实施方式4.
图5是表示本发明的实施方式4涉及的半导体装置的剖面图。在本实施方式中，通过对壳体电极7进行磨削，从而在壳体电极7的上表面设置有凹部14。第2按压部11配置于凹部14内。由此，能够得到与实施方式1同样的效果。另外，与实施方式1的弯折加工相比能够提高壳体电极7的加工精度。
实施方式5.
图6是表示本发明的实施方式5涉及的半导体装置的剖面图。图7是表示本发明的实施方式5涉及的壳体电极的俯视图。凹部14是朝向下方而宽度台阶状地变窄的贯穿孔。由此，第2按压部11只要仅配置于各壳体电极7的凹部14内即可，不需要配置于相邻的壳体电极7之间。因此，能够削减第2按压部11所使用的树脂量。其它的结构以及效果与实施方式2相同。
实施方式6.
图8是表示本发明的实施方式6涉及的半导体装置的剖面图。图9是表示本发明的实施方式6涉及的壳体电极的俯视图。凹部14是剖面形状为梯形的贯穿孔。因此，容易加工。其它的结构以及效果与实施方式5相同。
实施方式7.
图10是表示本发明的实施方式7涉及的半导体装置的剖面图。图11是表示本发明的实施方式7涉及的壳体电极的俯视图以及剖面图。壳体电极7剖面为“エ”字型，在侧面设置有凹部15。通过将壳体树脂填充至该凹部15内，从而将壳体电极7固定至壳体6。由此，能够将壳体电极7牢固地固定至壳体6，因此能够使导线接合性提高。另外，由于不需要在壳体电极7之上设置第2按压部11，因此能够降低导线8的高度。
实施方式8.
图12是表示本发明的实施方式8涉及的半导体装置的剖面图。图13是将本发明的实施方式8涉及的第2按压部放大后的剖面图。与实施方式1同样地，通过第1按压部10和第2按压部11对壳体电极7的两端进行按压，由此能够将壳体电极7牢固地固定至壳体6，因此能够使导线接合性提高。
在本实施方式中，第2按压部11是沿着导线8的锥形形状。以避开导线8的方式将第2按压部11切削成锥形形状，对应于此而能够确保第2按压部11与导线8之间的距离。因此，能够降低导线8的高度而无需变更壳体电极7的构造。
实施方式9.
图14是表示本发明的实施方式9涉及的半导体装置的剖面图。图15是表示本发明的实施方式9涉及的壳体电极的俯视图。与实施方式1同样地，通过第1按压部10和第2按压部11对壳体电极7的两端进行按压，由此能够将壳体电极7牢固地固定至壳体6，因此能够使导线接合性提高。
这里，如果使与壳体6相同的材料即壳体树脂漫入而形成第2按压部11，则第2按压部11的高度会变高。因此，在本实施方式中，将第2按压部11通过粘接材料的涂敷而形成。由此，能够降低第2按压部11的高度而无需变更壳体电极7的构造。
此外，半导体芯片5是MOSFET、SBD、IGBT或者PN二极管等。另外，半导体芯片5不限于由硅形成，也可以由与硅相比带隙大的宽带隙半导体形成。宽带隙半导体例如是碳化硅、氮化镓类材料或者金刚石。由这样的宽带隙半导体形成的半导体芯片5，由于耐电压性、容许电流密度高，所以能够小型化。通过使用该小型化的半导体芯片5，从而组装有该半导体芯片5的半导体装置也能够小型化。另外，由于半导体芯片5的耐热性高，所以能够使散热器的散热鳍片小型化，能够将水冷部空冷化，因而能够进一步将半导体装置小型化。另外，由于半导体芯片5的电力损耗低且高效，因此能够使半导体装置高效化。
标号的说明
5半导体芯片，6壳体，7壳体电极，8导线，10第1按压部，11第2按压部，12、14、15凹部，13贯穿孔。

Claims (11)

1.一种半导体装置，其特征在于，具备：
半导体芯片；
壳体，其将所述半导体芯片包围；
壳体电极，其安装于所述壳体的上表面；
导线，其与所述半导体芯片、所述壳体电极连接；
第1按压部，其在相比于所述壳体电极的与所述导线接合的接合部分更靠外侧处，将所述壳体电极按压于所述壳体的所述上表面；以及
第2按压部，其在与所述接合部分相比更靠内侧处，将所述壳体电极按压于所述壳体的所述上表面，
在所述壳体的所述上表面设置有凹部，
所述壳体电极被以进入所述凹部的方式弯折加工，
所述第2按压部配置于所述凹部内。
2.根据权利要求1所述的半导体装置，其特征在于，
所述凹部与所述壳体的内端面分离。
3.根据权利要求1或2所述的半导体装置，其特征在于，
在所述壳体电极的被进行了弯折加工的部分设置有贯穿孔。
4.一种半导体装置，其特征在于，具备：
半导体芯片；
壳体，其将所述半导体芯片包围；
壳体电极，其安装于所述壳体的上表面；
导线，其与所述半导体芯片、所述壳体电极连接；
第1按压部，其在相比于所述壳体电极的与所述导线接合的接合部分更靠外侧处，将所述壳体电极按压于所述壳体的所述上表面；以及
第2按压部，其在与所述接合部分相比更靠内侧处，将所述壳体电极按压于所述壳体的所述上表面，
在所述壳体电极的上表面设置有凹部，
所述第2按压部配置于所述凹部内。
5.根据权利要求4所述的半导体装置，其特征在于，
所述凹部是朝向下方而宽度变窄的贯穿孔。
6.根据权利要求5所述的半导体装置，其特征在于，
所述凹部是剖面形状为梯形的贯穿孔。
7.根据权利要求1至6中任一项所述的半导体装置，其特征在于，
所述第2按压部的上表面的高度不高于所述壳体电极的所述接合部分的上表面。
8.一种半导体装置，其特征在于，具备：
半导体芯片；
壳体，其将所述半导体芯片包围；
壳体电极，其安装于所述壳体的上表面；以及
导线，其与所述半导体芯片、所述壳体电极连接，
在所述壳体电极的侧面设置有凹部，
在所述凹部内填充壳体树脂，从而所述壳体电极被固定至所述壳体。
9.一种半导体装置，其特征在于，具备：
半导体芯片；
壳体，其将所述半导体芯片包围；
壳体电极，其安装于所述壳体的上表面；
导线，其与所述半导体芯片、所述壳体电极连接；
第1按压部，其在相比于所述壳体电极的与所述导线接合的接合部分更靠外侧处，将所述壳体电极按压于所述壳体的所述上表面；以及
第2按压部，其在与所述接合部分相比更靠内侧处，将所述壳体电极按压于所述壳体的所述上表面，
所述第2按压部是沿着所述导线的锥形形状。
10.一种半导体装置，其特征在于，具备：
半导体芯片；
壳体，其将所述半导体芯片包围；
壳体电极，其安装于所述壳体的上表面；
导线，其与所述半导体芯片、所述壳体电极连接；
第1按压部，其在相比于所述壳体电极的与所述导线接合的接合部分更靠外侧处，将所述壳体电极按压于所述壳体的所述上表面；以及
第2按压部，其在与所述接合部分相比更靠内侧处，将所述壳体电极按压于所述壳体的所述上表面，
所述第2按压部是粘接材料。
11.根据权利要求1至10中任一项所述的半导体装置，其特征在于，
所述半导体芯片由宽带隙半导体形成。
CN201680090969.XA 2016-11-25 2016-11-25 半导体装置 Pending CN110024118A (zh)

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