CN1099905A - 半导体基片的制作方法 - Google Patents

半导体基片的制作方法 Download PDF

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Publication number
CN1099905A
CN1099905A CN93118894A CN93118894A CN1099905A CN 1099905 A CN1099905 A CN 1099905A CN 93118894 A CN93118894 A CN 93118894A CN 93118894 A CN93118894 A CN 93118894A CN 1099905 A CN1099905 A CN 1099905A
Authority
CN
China
Prior art keywords
porous
substrate
layer
corrosion
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN93118894A
Other languages
English (en)
Chinese (zh)
Inventor
坂口清文
米原隆夫
佐藤信彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3148164A external-priority patent/JPH04346418A/ja
Priority claimed from JP3149297A external-priority patent/JPH04349621A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN1099905A publication Critical patent/CN1099905A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1922—Preparing SOI wafers using silicon etch back techniques, e.g. BESOI or ELTRAN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/15—Preparing bulk and homogeneous wafers by making porous regions on the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Weting (AREA)
CN93118894A 1991-02-15 1993-10-08 半导体基片的制作方法 Pending CN1099905A (zh)

Applications Claiming Priority (53)

Application Number Priority Date Filing Date Title
JP4221291 1991-02-15
JP4221391 1991-02-15
JP042213/91 1991-02-15
JP042212/91 1991-02-15
JP5560291 1991-02-28
JP5561291 1991-02-28
JP5560391 1991-02-28
JP5560491 1991-02-28
JP055606/91 1991-02-28
JP5560891 1991-02-28
JP5560591 1991-02-28
JP5561391 1991-02-28
JP5560791 1991-02-28
JP055605/91 1991-02-28
JP5561491 1991-02-28
JP5560191 1991-02-28
JP5561191 1991-02-28
JP5560691 1991-02-28
JP5560991 1991-02-28
JP5561091 1991-02-28
JP8575591 1991-03-27
JP14816091 1991-05-24
JP3148164A JPH04346418A (ja) 1991-05-24 1991-05-24 半導体基材の作製方法
JP14816191 1991-05-24
JP14816391 1991-05-24
JP3149297A JPH04349621A (ja) 1991-05-27 1991-05-27 半導体基材の作製方法
JP14931091 1991-05-27
JP14930191 1991-05-27
JP14930691 1991-05-27
JP14930291 1991-05-27
JP14930991 1991-05-27
JP14929991 1991-05-27
JP14931191 1991-05-27
JP14929891 1991-05-27
JP14930791 1991-05-27
JP14930891 1991-05-27
JP14930091 1991-05-27
JP15098491 1991-05-28
JP15099091 1991-05-28
JP15098191 1991-05-28
JP15098291 1991-05-28
JP15099491 1991-05-28
JP15098391 1991-05-28
JP15099291 1991-05-28
JP15099391 1991-05-28
JP15098091 1991-05-28
JP15098991 1991-05-28
JP15099191 1991-05-28
JP15098591 1991-05-28
JP15224991 1991-05-29
JP15225091 1991-05-29
JP15225191 1991-05-29
JP15224891 1991-05-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN92101589A Division CN1037727C (zh) 1991-02-15 1992-02-15 腐蚀多孔硅用的腐蚀液以及、使用该腐蚀液的腐蚀方法

Publications (1)

Publication Number Publication Date
CN1099905A true CN1099905A (zh) 1995-03-08

Family

ID=27586982

Family Applications (1)

Application Number Title Priority Date Filing Date
CN93118894A Pending CN1099905A (zh) 1991-02-15 1993-10-08 半导体基片的制作方法

Country Status (8)

Country Link
US (1) US5767020A (https=)
EP (2) EP0499488B9 (https=)
KR (1) KR960007640B1 (https=)
CN (1) CN1099905A (https=)
AT (1) ATE244931T1 (https=)
CA (1) CA2061264C (https=)
MY (1) MY114349A (https=)
SG (2) SG93197A1 (https=)

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CN115161032A (zh) * 2022-07-05 2022-10-11 北京师范大学 一种适用于单晶硅片的腐蚀溶液及方法

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AU2001297876A1 (en) 2000-11-27 2003-01-02 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch to produce porous group iii-v materials
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US7557002B2 (en) * 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
CN101536187A (zh) * 2006-10-05 2009-09-16 日立化成工业株式会社 有序排列、大长宽比、高密度的硅纳米线及其制造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115161032A (zh) * 2022-07-05 2022-10-11 北京师范大学 一种适用于单晶硅片的腐蚀溶液及方法

Also Published As

Publication number Publication date
MY114349A (en) 2002-10-31
EP0499488B9 (en) 2004-01-28
EP0499488B1 (en) 2003-07-09
US5767020A (en) 1998-06-16
ATE244931T1 (de) 2003-07-15
EP1347505A3 (en) 2004-10-20
EP0499488A3 (https=) 1995-03-01
CA2061264A1 (en) 1992-08-16
EP1347505A2 (en) 2003-09-24
SG93197A1 (en) 2002-12-17
CA2061264C (en) 1999-11-16
EP0499488A2 (en) 1992-08-19
KR960007640B1 (en) 1996-06-07
SG47089A1 (en) 1998-03-20

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C06 Publication
PB01 Publication
C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication