KR960007640B1 - Etching solution for etching porous silicon, etching method using the etching solution, and fabiricating method of semiconductor substate - Google Patents

Etching solution for etching porous silicon, etching method using the etching solution, and fabiricating method of semiconductor substate Download PDF

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Publication number
KR960007640B1
KR960007640B1 KR92002263A KR920002263A KR960007640B1 KR 960007640 B1 KR960007640 B1 KR 960007640B1 KR 92002263 A KR92002263 A KR 92002263A KR 920002263 A KR920002263 A KR 920002263A KR 960007640 B1 KR960007640 B1 KR 960007640B1
Authority
KR
South Korea
Prior art keywords
etching
porous silicon
etching solution
fabiricating
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR92002263A
Other languages
English (en)
Korean (ko)
Inventor
Kiyofumi Sakaguchi
Takao Yonehara
Nobuhiko Sato
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3148164A external-priority patent/JPH04346418A/ja
Priority claimed from JP3149297A external-priority patent/JPH04349621A/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of KR960007640B1 publication Critical patent/KR960007640B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1922—Preparing SOI wafers using silicon etch back techniques, e.g. BESOI or ELTRAN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/15—Preparing bulk and homogeneous wafers by making porous regions on the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Weting (AREA)
KR92002263A 1991-02-15 1992-02-15 Etching solution for etching porous silicon, etching method using the etching solution, and fabiricating method of semiconductor substate Expired - Fee Related KR960007640B1 (en)

Applications Claiming Priority (49)

Application Number Priority Date Filing Date Title
JP4221291 1991-02-15
JP4221391 1991-02-15
JP5561191 1991-02-28
JP5561091 1991-02-28
JP5560191 1991-02-28
JP5560491 1991-02-28
JP5560391 1991-02-28
JP5561491 1991-02-28
JP5560291 1991-02-28
JP5560791 1991-02-28
JP5560691 1991-02-28
JP5561391 1991-02-28
JP5560591 1991-02-28
JP5560991 1991-02-28
JP5561291 1991-02-28
JP5560891 1991-02-28
JP8575591 1991-03-27
JP14816191 1991-05-24
JP14816391 1991-05-24
JP3148164A JPH04346418A (ja) 1991-05-24 1991-05-24 半導体基材の作製方法
JP14816091 1991-05-24
JP14930691 1991-05-27
JP14930191 1991-05-27
JP14930291 1991-05-27
JP14930991 1991-05-27
JP14929891 1991-05-27
JP14930891 1991-05-27
JP14930791 1991-05-27
JP3149297A JPH04349621A (ja) 1991-05-27 1991-05-27 半導体基材の作製方法
JP14931191 1991-05-27
JP14931091 1991-05-27
JP14930091 1991-05-27
JP14929991 1991-05-27
JP15099491 1991-05-28
JP15099091 1991-05-28
JP15098191 1991-05-28
JP15098991 1991-05-28
JP15099291 1991-05-28
JP15098391 1991-05-28
JP15098291 1991-05-28
JP15098491 1991-05-28
JP15098091 1991-05-28
JP15099191 1991-05-28
JP15098591 1991-05-28
JP15099391 1991-05-28
JP15224891 1991-05-29
JP15225091 1991-05-29
JP15225191 1991-05-29
JP15224991 1991-05-29

Publications (1)

Publication Number Publication Date
KR960007640B1 true KR960007640B1 (en) 1996-06-07

Family

ID=27586982

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92002263A Expired - Fee Related KR960007640B1 (en) 1991-02-15 1992-02-15 Etching solution for etching porous silicon, etching method using the etching solution, and fabiricating method of semiconductor substate

Country Status (8)

Country Link
US (1) US5767020A (https=)
EP (2) EP0499488B9 (https=)
KR (1) KR960007640B1 (https=)
CN (1) CN1099905A (https=)
AT (1) ATE244931T1 (https=)
CA (1) CA2061264C (https=)
MY (1) MY114349A (https=)
SG (2) SG93197A1 (https=)

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TW211621B (https=) * 1991-07-31 1993-08-21 Canon Kk
DE69232347T2 (de) * 1991-09-27 2002-07-11 Canon K.K., Tokio/Tokyo Verfahren zur Behandlung eines Substrats aus Silizium
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JP3112106B2 (ja) * 1991-10-11 2000-11-27 キヤノン株式会社 半導体基材の作製方法
JP3237888B2 (ja) * 1992-01-31 2001-12-10 キヤノン株式会社 半導体基体及びその作製方法
JP3416163B2 (ja) * 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
TW330313B (en) * 1993-12-28 1998-04-21 Canon Kk A semiconductor substrate and process for producing same
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US6103598A (en) * 1995-07-13 2000-08-15 Canon Kabushiki Kaisha Process for producing semiconductor substrate
DE69627252T2 (de) * 1995-08-02 2004-01-29 Canon Kk Halbleitersubstrat und Herstellungsverfahren
EP0926709A3 (en) 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Method of manufacturing an SOI structure
JP3218564B2 (ja) 1998-01-14 2001-10-15 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法
TW405234B (en) * 1998-05-18 2000-09-11 United Microelectronics Corp Method for manufacturing a polysilicon fuse and the structure of the same
US6376859B1 (en) 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
US6410436B2 (en) 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US6680900B1 (en) * 1999-06-04 2004-01-20 Ricoh Company, Ltd. Optical-pickup slider, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof
DE19935446A1 (de) * 1999-07-28 2001-02-01 Merck Patent Gmbh Ätzlösung, Flußsäure enthaltend
US6653209B1 (en) 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
US6790785B1 (en) 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
AU2001297876A1 (en) 2000-11-27 2003-01-02 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch to produce porous group iii-v materials
US20030134486A1 (en) * 2002-01-16 2003-07-17 Zhongze Wang Semiconductor-on-insulator comprising integrated circuitry
JP2004228150A (ja) * 2003-01-20 2004-08-12 Canon Inc エッチング方法
US20050132332A1 (en) * 2003-12-12 2005-06-16 Abhay Sathe Multi-location coordinated test apparatus
US7244659B2 (en) * 2005-03-10 2007-07-17 Micron Technology, Inc. Integrated circuits and methods of forming a field effect transistor
KR101272097B1 (ko) 2005-06-03 2013-06-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 집적회로 장치 및 그의 제조방법
US7557002B2 (en) * 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
CN101536187A (zh) * 2006-10-05 2009-09-16 日立化成工业株式会社 有序排列、大长宽比、高密度的硅纳米线及其制造方法
US7989322B2 (en) 2007-02-07 2011-08-02 Micron Technology, Inc. Methods of forming transistors
EP2104140A1 (en) * 2008-03-21 2009-09-23 Rise Technology S.r.l. Conductive microstructure obtained by converting porous silicon into porous metal
CN102037560B (zh) * 2008-03-21 2012-09-26 Rise技术有限责任公司 通过将多孔硅转变成多孔金属或陶瓷来制作微结构的方法
IT1391596B1 (it) * 2008-11-04 2012-01-11 Rise Technology S R L Microstrutture ottenute convertendo silicio poroso
US8387230B2 (en) * 2010-08-27 2013-03-05 Transducerworks, Llc Method of making an ultrasonic transducer system
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US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
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CN115161032A (zh) * 2022-07-05 2022-10-11 北京师范大学 一种适用于单晶硅片的腐蚀溶液及方法

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Also Published As

Publication number Publication date
MY114349A (en) 2002-10-31
EP0499488B9 (en) 2004-01-28
EP0499488B1 (en) 2003-07-09
US5767020A (en) 1998-06-16
ATE244931T1 (de) 2003-07-15
EP1347505A3 (en) 2004-10-20
EP0499488A3 (https=) 1995-03-01
CN1099905A (zh) 1995-03-08
CA2061264A1 (en) 1992-08-16
EP1347505A2 (en) 2003-09-24
SG93197A1 (en) 2002-12-17
CA2061264C (en) 1999-11-16
EP0499488A2 (en) 1992-08-19
SG47089A1 (en) 1998-03-20

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