CN109725500B - 两面曝光装置及两面曝光方法 - Google Patents

两面曝光装置及两面曝光方法 Download PDF

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Publication number
CN109725500B
CN109725500B CN201811283713.8A CN201811283713A CN109725500B CN 109725500 B CN109725500 B CN 109725500B CN 201811283713 A CN201811283713 A CN 201811283713A CN 109725500 B CN109725500 B CN 109725500B
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China
Prior art keywords
substrate
calibration
mask
opening
camera
Prior art date
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CN201811283713.8A
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English (en)
Chinese (zh)
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CN109725500A (zh
Inventor
名古屋淳
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Aditech Engineering Co ltd
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Aditech Engineering Co ltd
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Priority to CN202410085232.5A priority Critical patent/CN117806133A/zh
Publication of CN109725500A publication Critical patent/CN109725500A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201811283713.8A 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法 Active CN109725500B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410085232.5A CN117806133A (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017210649A JP7378910B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法
JP2017-210649 2017-10-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202410085232.5A Division CN117806133A (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法

Publications (2)

Publication Number Publication Date
CN109725500A CN109725500A (zh) 2019-05-07
CN109725500B true CN109725500B (zh) 2024-01-19

Family

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CN201811283713.8A Active CN109725500B (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法
CN202410085232.5A Pending CN117806133A (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法

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CN202410085232.5A Pending CN117806133A (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法

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JP (2) JP7378910B2 (https=)
KR (2) KR102671167B1 (https=)
CN (2) CN109725500B (https=)
TW (1) TWI781240B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6994806B2 (ja) * 2017-10-31 2022-01-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
TWI728410B (zh) 2019-07-18 2021-05-21 欣興電子股份有限公司 電路板結構及其製作方法
CN112291940A (zh) * 2019-07-24 2021-01-29 欣兴电子股份有限公司 电路板结构及其制作方法
JP2021033018A (ja) * 2019-08-22 2021-03-01 大日本印刷株式会社 露光方法及び露光方法を備える蒸着マスク製造方法並びに露光装置
CN111086906A (zh) * 2019-11-26 2020-05-01 矽电半导体设备(深圳)股份有限公司 分选膜放置芯粒的位置校正方法及芯粒分选方法
CN116068862B (zh) * 2022-11-21 2026-01-16 迪盛微(江苏)装备科技有限公司 一种曝光设备的拉料补偿方法、装置及存储介质
CN116360225B (zh) * 2023-03-17 2024-02-06 广东科视光学技术股份有限公司 一种双面pcb板曝光机及其在线自动对位装置
JP2025031076A (ja) * 2023-08-25 2025-03-07 キヤノントッキ株式会社 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05323621A (ja) * 1991-05-21 1993-12-07 Ushio Inc フィルム露光装置におけるフィルムとレチクルの位置合わせ方法
JPH10163136A (ja) * 1996-12-04 1998-06-19 Unisia Jecs Corp シリコンウエハの加工方法
JP2000305274A (ja) * 1999-04-20 2000-11-02 Ushio Inc 露光装置
TW448345B (en) * 1995-09-19 2001-08-01 Ushio Electric Inc Method for aligning a mask relative to a workpiece and device thereof
JP2004325965A (ja) * 2003-04-25 2004-11-18 Hitachi Via Mechanics Ltd 両面露光方法
JP2007121425A (ja) * 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2011040591A (ja) * 2009-08-12 2011-02-24 Nikon Corp 位置検査方法及び装置、露光方法及び装置、並びにインライン検査システム
JP2012243987A (ja) * 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法
JP2015046427A (ja) * 2013-08-27 2015-03-12 トヨタ自動車株式会社 アライメント方法及びパターニング用マスク

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2880314B2 (ja) * 1991-03-26 1999-04-05 ウシオ電機株式会社 フィルム搬送機構およびこのフィルム搬送機構を具えた露光装置
JP3201233B2 (ja) * 1995-10-20 2001-08-20 ウシオ電機株式会社 裏面にアライメント・マークが設けられたワークの投影露光方法
JPH1022201A (ja) * 1996-07-04 1998-01-23 Nikon Corp アライメントマーク検出装置
JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP3376961B2 (ja) * 1999-06-08 2003-02-17 ウシオ電機株式会社 マスクを移動させて位置合わせを行う露光装置
JP2004341279A (ja) * 2003-05-16 2004-12-02 Dainippon Printing Co Ltd カラーフィルタの製造装置、カラーフィルタの製造方法、及びカラーフィルタ
WO2006022205A1 (ja) * 2004-08-25 2006-03-02 Kabushiki Kaisha Toshiba 画像表示装置及びその製造方法
EP1791169A4 (en) * 2004-08-31 2011-03-02 Nikon Corp ALIGNMENT PROCESS, DEVELOPMENT SYSTEM, SUBSTRATED REPEATABILITY MEASURING METHOD, POSITION MEASURING METHOD, EXPOSURE METHOD, SUBSTRATE PROCESSING DEVICE, MEASURING METHOD AND MEASURING DEVICE
JP2006278648A (ja) 2005-03-29 2006-10-12 Nsk Ltd 両面露光方法
JP2007010733A (ja) * 2005-06-28 2007-01-18 Fujifilm Holdings Corp 露光装置及び露光方法
JP4542495B2 (ja) * 2005-10-19 2010-09-15 株式会社目白プレシジョン 投影露光装置及びその投影露光方法
US20110027542A1 (en) * 2009-07-28 2011-02-03 Nsk Ltd. Exposure apparatus and exposure method
JP5538048B2 (ja) * 2010-04-22 2014-07-02 日東電工株式会社 アライメントマークの検出方法および配線回路基板の製造方法
TW201224678A (en) * 2010-11-04 2012-06-16 Orc Mfg Co Ltd Exposure device
WO2012081234A1 (ja) * 2010-12-14 2012-06-21 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
JP6002898B2 (ja) 2011-08-10 2016-10-05 株式会社ブイ・テクノロジー 露光装置用のアライメント装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05323621A (ja) * 1991-05-21 1993-12-07 Ushio Inc フィルム露光装置におけるフィルムとレチクルの位置合わせ方法
TW448345B (en) * 1995-09-19 2001-08-01 Ushio Electric Inc Method for aligning a mask relative to a workpiece and device thereof
JPH10163136A (ja) * 1996-12-04 1998-06-19 Unisia Jecs Corp シリコンウエハの加工方法
JP2000305274A (ja) * 1999-04-20 2000-11-02 Ushio Inc 露光装置
JP2004325965A (ja) * 2003-04-25 2004-11-18 Hitachi Via Mechanics Ltd 両面露光方法
JP2007121425A (ja) * 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2011040591A (ja) * 2009-08-12 2011-02-24 Nikon Corp 位置検査方法及び装置、露光方法及び装置、並びにインライン検査システム
JP2012243987A (ja) * 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法
JP2015046427A (ja) * 2013-08-27 2015-03-12 トヨタ自動車株式会社 アライメント方法及びパターニング用マスク

Also Published As

Publication number Publication date
KR20190049561A (ko) 2019-05-09
TW201935137A (zh) 2019-09-01
JP7389885B2 (ja) 2023-11-30
JP7378910B2 (ja) 2023-11-14
KR20240078646A (ko) 2024-06-04
CN109725500A (zh) 2019-05-07
CN117806133A (zh) 2024-04-02
KR102834815B1 (ko) 2025-07-17
TWI781240B (zh) 2022-10-21
JP2019082610A (ja) 2019-05-30
JP2023014352A (ja) 2023-01-26
KR102671167B1 (ko) 2024-05-31

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