CN109560021A - 基板处理装置、基板处理方法以及计算机存储介质 - Google Patents
基板处理装置、基板处理方法以及计算机存储介质 Download PDFInfo
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Abstract
本公开涉及基板处理装置、基板处理方法以及计算机存储介质。在具备在减压气氛下对基板进行处理的处理室和搬送室的基板处理装置中,减少从处理室被带入搬送室的异物、即沉积物。具备在减压气氛下对基板进行处理的COR模块和经由闸门(46b)与COR模块连接的传递模块(30)的基板处理装置具有:第一供气部(50),其向传递模块(30)的内部供给非活性气体;第二供气部(70),其对闸门(46b)供给非活性气体;以及排气部(60),其排出传递模块(30)的内部的气氛。
Description
技术领域
本发明涉及一种具备在减压气氛下对基板进行处理的处理室、经由闸门而与所述处理室连接的搬送室的基板处理装置、使用该基板处理装置的基板处理方法、以及计算机存储介质。
背景技术
例如在半导体元件的制造工艺中,进行使收纳半导体晶圆(以下有时称作“晶圆”)的处理室为减压状态,并且对该晶圆实施规定的处理的各种处理工序。另外,例如使用在共用的搬送室的周围配置有多个处理室的基板处理装置来进行这些多个处理工序。而且,在多个处理室中并行地进行针对多个晶圆的处理,由此使基板处理的效率提高。
在这样的基板处理装置中,在相对于处理室搬入搬出晶圆时,打开用于分离处理室与搬送室的闸门(闸阀),使用设置于搬送室的搬送臂来搬送晶圆。在处理室与搬送室连通时,处理室内的气氛流入搬送室,有时搬送室的内部例如被为有机物的尘埃的污染物(以下有时称作“污尘”)、微粒等污染。此外,搬送室内的污尘、微粒的产生源不限于上述的处理室,它们能够因为各种原因而产生在搬送室内。
因此,在专利文献1中提出一种具备用于向搬送室内供给非活性气体的非活性气体供给线、以及用于对搬送室内进行排气的排气线的处理装置。在该情况下,当在处理室中对晶圆进行处理的期间,不间断地向搬送室内供给非活性气体,由此实现将该搬送室内的气氛维持为清洁。
专利文献1:日本专利第4414869号公报
发明内容
发明要解决的问题
如上述的那样,在基板处理装置中,对晶圆进行各种处理,例如进行COR(ChemicalOxide Removal:化学氧化物去除)处理和PHT(Post Heat Treatment:后热处理)处理。在COR处理中,使处理气体与形成于晶圆上的膜发生反应来生成生成物。在该情况下,在利用搬送臂相对于进行COR处理的处理室搬入搬出晶圆时,有时有机物的生成物(以下有时称作“沉积物”)附着于晶圆、搬送臂。尤其因为是在减压气氛下进行COR处理,因此晶圆、搬送臂被冷却,使得沉积物容易附着。
然而,在专利文献1所记载的方法中,只通过向搬送室内供给非活性气体不能够减少像这样附着于晶圆、搬送臂的沉积物。
本发明是鉴于该点而完成的,其目的在于在具备在减压气氛下对基板进行处理的处理室和搬送室的基板处理装置中减少从处理室带入搬送室的异物(沉积物)。
用于解决问题的方案
为了达成所述的目的,本发明是一种具备在减压气氛下对基板进行处理的处理室、以及经由闸门来与所述处理室连接的搬送室的基板处理装置,其特征在于,具有:第一供气部,其向所述搬送室的内部供给非活性气体;第二供气部,其对所述闸门供给非活性气体;以及排气部,其将所述搬送室的内部的气氛排出。
根据本发明,当在处理室中进行基板的处理时以及在处理室与搬送室之间搬送基板时,从第一供气部向搬送室的内部供给非活性气体,并且从排气部对搬送室的内部进行排气,由此去除污尘、微粒等,从而能够将搬送室的内部的气氛维持为清洁。
另外,当为了在处理室与搬送室之间搬送基板而打开闸门时,从第二供气部对闸门供给非活性气体,由此在闸门处形成非活性气体的气帘。于是,例如搬送中的基板、搬送臂通过非活性气体的气帘,因此在处理室中产生的沉积物不易附着于该基板、搬送臂。因而,能够减少从处理室带入搬送室的沉积物。
可以对从所述第二供气部供给的非活性气体进行加热。
所述基板处理装置还可以具有:加载互锁室,其经由其它闸门来与所述搬送室连接,并且能够将内部在大气压气氛与减压气氛之间进行切换;以及第三供气部,其对所述其它闸门供给非活性气体。
可以对从所述第三供气部供给的非活性气体进行加热。
可以是所述第一供气部设置于所述搬送室中的一端部,所述排气部设置于所述搬送室中的与所述一端部相向的另一端部。
可以在所述搬送室中设置用于搬送基板的搬送臂,所述搬送臂将两张基板以在该两张基板之间隔开间隔的方式重叠地保持。
基于其它观点的本发明为一种使用了基板处理装置的基板处理方法,所述基板处理装置具有在减压气氛下对基板进行对处理的处理室、以及经由闸门来与所述处理室连接的搬送室,所述基板处理方法的特征在于,当在所述处理室中进行对基板的处理以及在所述处理室与所述搬送室之间搬送基板时,从第一供气部向所述搬送室的内部供给非活性气体,当为了在所述处理室与所述搬送室之间搬送基板而打开所述闸门时,从第二供气部对所述闸门供给非活性气体。
可以对从所述第二供气部供给的非活性气体进行加热。
所述基板处理装置还具有经由其它闸门来与所述搬送室连接并且能够将内部在大气压气氛与减压气氛之间进行切换的加载互锁室,在所述基板处理方法中,当在所述加载互锁室中收容基板时以及在所述加载互锁室与所述搬送室之间搬送基板时,从所述第一供气部向所述搬送室的内部供给非活性气体,当为了在所述加载互锁室与所述搬送室之间搬送基板而打开其它闸门时,从第三供气部对所述其它闸门供给非活性气体。
可以对从所述第三供气部供给的非活性气体进行加热。
另外,根据基于其它观点的本发明,提供一种可读取的计算机存储介质,其保存有程序,该程序在控制基板处理装置的控制部的计算机上运行时,使基板处理装置执行所述基板处理方法。
发明的效果
根据本发明,能够将搬送室的内部的气氛维持为清洁,并且能够减少从处理室带入搬送室的异物(沉积物)。其结果是,能够使基板处理的可靠性提高,并且使产品的产量提高。
附图说明
图1是表示本实施方式所涉及的基板处理装置的结构的概要的俯视图。
图2是表示搬送臂的结构的说明图,图2的(a)是表示搬送臂的整体的立体图,图2的(b)是搬送臂的拾取部的侧视图。
图3是表示对传递模块设置的供气部和排气部的结构的概要的说明图。
图4是表示传递模块中的非活性气体的流动的说明图。
图5是表示闸门中的非活性气体的流动的说明图。
图6是表示其它实施方式所涉及的、对传递模块设置的供气部和排气部的结构的概要的说明图。
图7是表示其它实施方式所涉及的、传递模块中的非活性气体的流动的说明图。
附图标记说明
1:基板处理装置;10:晶圆保管部;11:晶圆处理部;23a、23b:加载互锁模块;26a:闸阀;26b:闸门;30:传递模块;31:COR模块;32:PHT模块;40:晶圆搬送机构;41a、41b:搬送臂;45a、45b:拾取部;45at、45bt:上部拾取;45ab、45bb:下部拾取;46a:闸阀;56b:闸门;50:第一供气部;52:供气口;60:排气部;62:排气口;70:第二供气部;72:喷嘴;73:加热器;80:控制部;100:第三供气部;102:喷嘴;103:加热器;W:晶圆。
具体实施方式
以下参照附图来说明本发明的实施方式。此外,在本说明书和附图中对实质上具有相同的功能结构的要素标注相同的附图标记,由此省略重复说明。
首先,对本实施方式所涉及的基板处理装置的结构进行说明。图1是表示本实施方式所涉及的基板处理装置1的结构的概要的俯视图。此外,在本实施方式中,对在基板处理装置1中对作为基板的晶圆W进行COR处理和PHT处理的情况进行说明。
如图1所示,基板处理装置1具有将用于保管多个晶圆W的晶圆保管部10和对晶圆W实施规定的处理的晶圆处理部11一体地连接而成的结构。
晶圆保管部10具有:加载端口21,其是前开式传送盒20的载置台,前开式传送盒20是保管多个晶圆W的容器;加载模块22,其从被载置于加载端口21的前开式传送盒20接受所保管的晶圆W,另外将在晶圆处理部11中实施了规定的处理的晶圆W交接到前开式传送盒20;以及加载互锁模块23a、23b,其作为暂时保持晶圆W以使在加载模块22与后述的传递模块30之间交接晶圆W的加载互锁室。
前开式传送盒20将多个晶圆W以等间隔地多层重叠的方式收容。另外,载置于加载端口21的前开式传送盒20的内部分别通常被大气充满,但有时该内部也被氮气等充满并密闭。
加载模块22由内部为矩形的壳体构成,壳体的内部维持为大气压气氛。在加载模块22的壳体的构成长边的一个侧面并列地设置有多个、例如三个加载端口21。另外,加载模块22具有能够在壳体的内部沿其长度方向移动的搬送臂(未图示)。搬送臂从被载置于加载端口21的前开式传送盒20向加载互锁模块23a搬送晶圆W,另外从加载互锁模块23b向前开式传送盒20搬出晶圆W。
加载互锁模块23a暂时保持晶圆W,以将在大气压气氛的加载端口21载置的前开式传送盒20中收容的晶圆W向内部为减压气氛的后述的传递模块30交接。加载互锁模块23a具有将两张晶圆W以重叠的方式保持的上部贮藏柜24a和下部贮藏柜24b。
加载互锁模块23a经由设置有闸阀25a的闸门5b来与加载模块22连接。利用该闸阀25a,能够兼顾加载互锁模块23a与加载模块22之间确保气密性和彼此连通。另外,加载互锁模块23a经由设置有闸阀26a的闸门26b来与后述的传递模块30连接。利用该闸阀26a,能够兼顾加载互锁模块23a与传递模块30之间确保气密性和彼此连通。
并且,构成为加载互锁模块23a与用于供给气体的供气部(未图示)和用于排出气体的排气部(未图示)连接,利用供气部和排气部能够将加载互锁模块23a的内部在大气压气氛与减压气氛之间进行切换。此外,加载互锁模块23b也具有与加载互锁模块23a相同的结构。
晶圆处理部11具有:传递模块30,其作为同时搬送两张晶圆W的搬送室;COR模块31,其对从传递模块30搬送来的晶圆W实施COR处理;以及PHT模块32,其对从传递模块30搬送来的晶圆W实施PHT处理。相对于传递模块30设置有多个例如四个COR模块31、多个例如两个PHT模块32。此外,传递模块30、COR模块31和PHT模块32的内部分别维持为减压气氛。
在COR模块31的内部设置有将两张晶圆W沿水平方向并列地载置的两个载物台33a、33b。通过在载物台33a、33b上并列地载置晶圆W,COR模块31对两张晶圆W同时实施COR处理。另外,COR模块31与用于供给处理气体、吹扫气体等的供气部(未图示)和用于排出气体的排气部(未图示)连接。
在PHT模块32的内部设置有将两张晶圆W沿水平方向并列地载置的两个载物台34a、34b。通过在载物台34a、34b上并列地载置晶圆W,PHT模块32对两张晶圆W同时实施PHT处理。另外,PHT模块32与用于供给气体的供气部(未图示)和用于排出气体的排气部(未图示)连接。
传递模块30将未处理的晶圆W从晶圆保管部10向COR模块31、PHT模块32依次搬送,并且将处理完毕的晶圆W从PHT模块32搬出到晶圆保管部10。传递模块30由内部为矩形的壳体构成,壳体的内部维持为减压气氛。
在传递模块30的内部设置有用于搬送晶圆W的晶圆搬送机构40。晶圆搬送机构40具有:搬送臂41a、41b,其将两张晶圆W以重叠的方式保持并移动;旋转台42,其以使搬送臂41a、41b可旋转的方式支承搬送臂41a、41b;旋转载置台43,其搭载有旋转台42。在传递模块30的内部设置有沿该传递模块30的长度方向延伸的导轨44。构成为旋转载置台43设置于导轨44上,晶圆搬送机构40能够沿导轨44移动。
在此,对上述的搬送臂41a、41b的结构详细地进行说明。图2是表示搬送臂41a、41b的结构的说明图,图2的(a)为表示搬送臂41a、41b的整体的立体图,图2的(b)是搬送臂41a的拾取部45a的侧视图。
如图2所示,搬送臂41a、41b分别具有在前端搭载两张晶圆W的拾取部45a、45b。搬送臂41a具有利用多个接头(关节)部将多个联杆(节)部以可旋转的方式连结的联杆机构。搬送臂41a的联杆机构的一端以旋转自如的方式被旋转台42支承。另外,搬送臂41a的联杆机构的另一端为自由端,在另一端上设置有拾取部45a。
拾取部45a具有将双叉状的上部拾取45at和下部拾取45ab以规定的距离t分离地层叠的结构。拾取部45a在上部拾取45at的上表面搭载一张晶圆W,还在下部拾取45ab的上表面(上部拾取45at与下部拾取45ab之间)搭载一张晶圆W。即,搬送臂41a利用拾取部45a将两张晶圆W以彼此之间隔开间隔的方式重叠地保持。
另外,通过联杆机构的一端的旋转和基于联杆机构的另一端的移动,搬送臂41a使另一端的拾取部45a搭载的各晶圆W移动到期望的位置。此外,搬送臂41b具有与搬送臂41a相同的结构。搬送臂41a、41b一次搭载两张晶圆W,因此晶圆搬送机构40能够利用搬送臂41a、41b同时搬送四张晶圆W。
如图1所示,传递模块30如上所述经由闸阀26a、26a来与加载互锁模块23a、23b连接。另外,传递模块30经由设置有闸阀46a的闸门46b来与COR模块31连接。利用该闸阀46a,能够兼顾传递模块30与COR模块31之间确保气密性和彼此连通。并且,传递模块30经由设置有闸阀47a的闸门47b来与PHT模块32连接。利用该闸阀47a,能够兼顾传递模块30与PHT模块32之间确保气密性和彼此连通。
在传递模块30中,在加载互锁模块23a中以重叠的方式被上部贮藏柜24a和下部贮藏柜24b保持的两张晶圆W,也由搬送臂41a以重叠的方式保持并接受,并且搬送到COR模块31和PHT模块32。另外,在PHT模块32中被实施了处理的两张晶圆W,由搬送臂41b以重叠的方式保持并搬出到加载互锁模块23b。
如上述的那样,传递模块30的内部维持为减压气氛。在此,对传递模块30的内部的气氛控制详细地进行说明。图3是表示对传递模块30设置的供气部和排气部的结构的概要的说明图。
如图3所示,在传递模块30设置有用于向该传递模块30的内部供给非活性气体的第一供气部50。第一供气部50具有第一供气线51(供气管)。第一供气线51的一端部与在传递模块30的底面的一端部开口的供气口52连通。第一供气线51的另一端部与气体供给源53连通,气体供给源53的内部贮存非活性气体、例如氮气。在第一供气线51上,从供气口52朝向气体供给源53依次设置有开闭阀54、压力调整阀55(PCV:Pressure Control Valve)、流量计56。压力调整阀55与压力计57连接并基于该压力计57的测定结果来调整非活性气体的压力,该压力计57测定传递模块30的内部的压力。
在传递模块30设置有用于排出内部的气氛的排气部60。排气部60具有排气线61(排气管)。排气线61的一端部与在传递模块30的底面的另一端部开口的排气口62连通。即,供气口52与排气口62相向地配置。排气线61的另一端部与干泵63连通,该干泵63用于对传递模块30的内部进行抽真空。在排气线61上,从排气口62朝向干泵63依次设置有开闭阀64、蝶形阀65。
在此,因干泵63的排气性能、管径、管长而非活性气体的流量会变动,因此在多个基板处理装置1之间,传递模块30的内部的稳定压力会变动。在本实施方式中,通过设置蝶形阀65,能够抑制装置之间差异,从而能够以稳定压力使非活性气体的流量固定化。由此,实现不依赖于干泵63的排气性能、管径、管长的传递模块30。
在传递模块30与COR模块31之间设置的闸门46b设置有用于向该闸门46b供给非活性气体的第二供气部70。第二供气部70具有第二供气线71(供气管)。第二供气线71的一端部与喷嘴72连通。在喷嘴72中形成有多个非活性气体的供给口(未图示)。喷嘴72例如设置于闸门46b的下方,以覆盖闸门46b的方式供给非活性气体。第二供气线71的另一端部与气体供给源53连通。即,设置为第一供气部50和第二供气部70共用气体供給源53。在第二供气线71上,从喷嘴72朝向气体供给源53依次设置有加热器73、开闭阀74、流量计56。而且,从第二供气部70对闸门46b供给被加热器73加热了的非活性气体,以覆盖该闸门46b的方式形成非活性气体的气帘。此外,在图示的例子中针对一个闸门46b设置第二供气部70,但针对其它三个闸门46b也同样地设置第二供气部70。
如图1所示,对以上的基板处理装置1设置有控制部80。控制部80例如为计算机,并且具有程序保存部(未图示)。在程序保存部中保存有用于对基板处理装置1中的晶圆W的处理进行控制的程序。另外,在程序保存部中还保存有用于对上述的各种处理装置、搬送装置等驱动系统的动作进行控制,以实现基板处理装置1中的后述的显影处理的程序。此外,所述程序例如可以为记录于硬盘(HD)、软盘(FD)、光盘(CD)、光磁盘(MO)、存储卡等可由计算机读取的存储介质中的程序,也可以为从该存储介质安装于控制部80的程序。
本实施方式所涉及的基板处理装置1如以上那样构成,接着对基板处理装置1中的晶圆处理进行说明。
首先,将收纳有多个晶圆W的前开式传送盒20载置于加载端口21。之后,利用加载模块22从前开式传送盒20取出两张晶圆W,并且搬入加载互锁模块23a。当向加载互锁模块23a搬入晶圆W时,关闭闸阀25a,使加载互锁模块23a内密闭,进行减压。之后,打开闸阀26a,加载互锁模块23a的内部与传递模块30的内部连通。
此时,如图4所示,从第一供气部50的供气口52向传递模块30的内部供给非活性气体,从排气部60的排气口62排出气氛。传递模块30的内部维持为规定压力的减压气氛。该传递模块30的内部比COR模块31和PHT模块32各自的内部的压力高,为正压。另外,在传递模块30的内部形成有从供气口52朝向排气口62的一个方向的非活性气体的流动(图4中的箭头)。通过该一个方向的非活性气体的流动,恰当地排出处于传递模块30的内部的污尘、微粒等,将内部的气氛维持为清洁。
接着,当加载互锁模块23a的内部与传递模块30的内部连通时,利用晶圆搬送机构40的搬送臂41a将两张晶圆W以重叠的方式保持,并且从加载互锁模块23a搬入到传递模块30。接着,晶圆搬送机构40移动到一个COR模块31之前。
接着,打开闸阀46a,保持两张晶圆W的搬送臂41a进入到COR模块31。然后,从搬送臂41a向各个载物台33a、33b各载置一张晶圆W。之后,搬送臂41a从COR模块31退出。
此时,如图5所示,从第二供气部70的喷嘴72对闸门46b供给非活性气体,以覆盖闸门46b的方式形成非活性气体的气帘(图5中的箭头)。另外,利用加热器73将非活性气体加热到120℃~300℃。然后,保持两张晶圆W的搬送臂41a通过被加热了的非活性气体的气帘。在此,在COR模块31中的COR处理中,产生有机物的生成物即沉积物,但搬送臂41a像这样通过被加热了的非活性气体的气帘,因此能够抑制沉积物附着于搬送臂41a和晶圆W。因而,即使搬送臂41a从COR模块31退出,也能够抑制沉积物被带入传递模块30中。
此外,在像这样向COR模块31搬入晶圆W时,当打开闸阀46a时,传递模块30的内部相比于COR模块31的内部而言为正压,因此气氛从传递模块30流向COR模块31。此时,传递模块30的内部进一步被减压,因此为了成为规定的压力,在第一供气部50中利用压力调整阀55来调整非活性气体的压力。而且,当传递模块30的内部与COR模块31的内部成为等压时,气氛不会流向COR模块31。
接着,当搬送臂41a从COR模块31退出时,关闭闸阀46a,在COR模块31中对两张晶圆W进行COR处理。另外,当关闭闸阀46a时,也停止来自第二供气部70的非活性气体的供给。
接着,当COR模块31中的COR处理结束时,打开闸阀46a,搬送臂41a进入到COR模块31。然后,从载物台33a、33b向搬送臂41a交接两张晶圆W,利用搬送臂41a将两张晶圆W以重叠的方式保持。之后,搬送臂41a从COR模块31退出,关闭闸阀46a。
此时,再次从第二供气部70的喷嘴72对闸门46b供给被加热了的非活性气体,以覆盖闸门46b的方式形成非活性气体的气帘。然后,保持两张晶圆W的搬送臂41a通过被加热了的非活性气体的气帘。在此,由于COR处理是在减压气氛下进行的,因此被实施了该COR处理的晶圆W被冷却。而且,一般来讲沉积物容易附着于被冷却的物品上。关于该点,在本实施方式中,搬送臂41a像这样通过被加热了的非活性气体的气帘,因此能够抑制沉积物附着于搬送臂41a与晶圆W。因而,即使搬送臂41a从COR模块31退出,也能够抑制沉积物被带入传递模块30。
此外,在进行COR处理时、以及相对于COR模块31搬入搬出晶圆W时,在传递模块30中继续进行基于第一供气部50的非活性气体的供给和基于排气部60的排气。
接着,晶圆搬送机构40移动到一个PHT模块32之前。接着,打开闸阀47a,保持两张晶圆W的搬送臂41a进入PHT模块32。然后,从搬送臂41a向各个载物台34a、34b各载置一张晶圆W。之后,搬送臂41a从COR模块31退出。接着,关闭闸阀47a,对两张晶圆W进行PHT处理。
接着,当PHT处理结束时,打开闸阀47a,搬送臂41b进入到PHT模块32。然后,从载物台34a、34b向搬送臂41b交接两张晶圆W,利用搬送臂41b将两张晶圆W以重叠的方式保持。之后,搬送臂41b从PHT模块32退出,关闭闸阀47a。
此外,在进行PHT处理时、以及相对于PHT模块32搬入搬出晶圆W时,在传递模块30中继续进行基于第一供气部50的非活性气体的供给和基于排气部60的排气。
之后,打开闸阀26a,利用晶圆搬送机构40将两张晶圆W搬入到加载互锁模块23b。当将晶圆W搬入到加载互锁模块23b内时,关闭闸阀26a,加载互锁模块23b内被密闭,与大气连通。之后,利用加载模块22将两张晶圆W收纳于前开式传送盒20中。像这样,基板处理装置1中的一系列的晶圆处理结束。
根据以上的实施方式,在进行COR模块31和PHT模块32中的晶圆W的处理时、以及相对于COR模块31和PHT模块32搬入搬出晶圆W时,在传递模块30中供给第一供气部50的非活性气体,并且从排气部60进行排气。因此,将污尘、微粒等去除,能够将传递模块30的气氛维持为清洁。
另外,当在COR模块31与传递模块30之间搬入搬出晶圆W时,从第二供气部70对闸门47b供给被加热了的非活性气体,由此在闸门47b处形成非活性气体的气帘。于是,搬送中的晶圆W、搬送臂41a通过非活性气体的气帘,因此在COR模块31中产生的沉积物不易附着于晶圆W、搬送臂41a。另外,非活性气体的气帘以覆盖闸门46b的方式形成,因此即使搬送臂41a具有两层拾取45at、45ab也能够享受该抑制沉积物附着的效果。因而,能够减少从COR模块31带入传递模块30的沉积物。
在此,在COR模块31中的COR处理中,从载物台33a、33b产生沉积物,搬送臂41a具有上部拾取45at和下部拾取45ab,因此相比于上部拾取45at,容易在位于载物台33a、33b侧的下部拾取45ab的背面附着沉积物。关于该点,在本实施方式中,如图5所示,喷嘴72设置于闸门46b的下方,从闸门46b的下方朝向上方形成非活性气体的气帘。在该情况下,直接向下部拾取45ab的背面吹送非活性气体,因此能够更恰当地抑制沉积物附着于该下部拾取45ab的背面。
此外,在以上的实施方式的基板处理装置1中,第二供气部70的喷嘴72设置于闸门46b的下方,但喷嘴72的配置不限于此,如果配置为从喷嘴72供给的非活性气体覆盖闸门46b即可。例如喷嘴72可以配置于闸门46b的上方,从闸门46b的上方供给非活性气体,或者喷嘴72可以配置于闸门46b的上下两方,从闸门46b的上方和下方供给非活性气体。另外,喷嘴72可以配置于闸门46b的侧方,从闸门46b的侧方供给非活性气体。
在以上的实施方式的基板处理装置1中,利用加热器73对从第二供气部70供给的非活性气体进行加热,但该加热不一定是必须的。即使从第二供气部70供给常温的非活性气体,也能够享受上述的沉积物减少的效果。但是,通过供给加热后的非活性气体,沉积物不易附着于晶圆W、搬送臂41a的效果更大。
在以上的实施方式的基板处理装置1中,也可以是,针对被设置于传递模块30与加载互锁模块23a之间的闸门26b,如图6所示那样,设置向闸门26b供给非活性气体的第三供气部100。第三供气部100具有与第二供气部70相同的结构。即,第三供气部100具有第三供气线101(供气管)。第三供气线101的一端部与喷嘴102连通。在喷嘴102中形成有多个非活性气体的供给口(未图示)。喷嘴102例如设置于闸门26b的下方,以覆盖闸门26b的方式供给非活性气体。第三供气线101的另一端部与气体供给源53连通。即,气体供给源53设置为由第一供气部50、第二供气部70、第三供气部100共用。在第三供气线101上,从喷嘴102朝向气体供给源53依次设置有加热器103、开闭阀104、流量计56。此外,在图示的例子中,针对一个闸门26b设置有第三供气部100,针对另一个闸门26b也同样地设置第三供气部100。
在该情况下,当在加载互锁模块23a与传递模块30之间搬入搬出晶圆W时,从第三供气部100对闸门26b供给被加热器103加热了的非活性气体,以覆盖该闸门26b的方式形成非活性气体的气帘。而且,搬送臂41a通过被加热了的非活性气体的气帘。在此,在加载互锁模块23a中,在大气压气氛与减压气氛之间进行切换,晶圆W也被保持于减压气氛下。在该情况下,晶圆W被冷却,因此微粒等容易附着。关于该点,在本实施方式中,搬送臂41a通过被加热了的非活性气体的气帘,因此能够抑制微粒等附着于搬送臂41a与晶圆W。因而,能够抑制微粒等被带入传递模块30中。
在以上的实施方式的基板处理装置1中,第一供气部50的供气口52设置于传递模块30的一端部,排气部60的排气口62设置于传递模块30的另一端部,但这些供气口52和排气口62的配置不限定于此。例如可以使供气口52与排气口62的配置相反,将供气口52设置于另一端部,将排气口62设置于一端部。另外,如图7所示,可以在一端部的多个例如两个部位设置供气口52,在另一端部的多个例如两个部位设置排气口62。
在以上的实施方式的基板处理装置1中,在第一供气部50中,流量计56可以具有流量调整功能(MFC:Mass Flow Controller:质量流量控制器)。另外,在排气部60中,可以代替蝶形阀65而设置自动压力控制阀(APC:Auto Pressure Cotroller)。在该情况下,能够自动地控制供给系统和排气系统,从而能够实现更严密的气氛控制。
在以上的实施方式的基板处理装置1中,可以在第一供气部50的第一供气线51上设置加热器(未图示),对从该第一供气部50供给的非活性气体进行加热。例如将非活性气体加热到120℃~300℃。在该情况下,在传递模块30的内部中,能够更恰当地抑制污尘、微粒附着于晶圆W、各种构件上。此外,从对传递模块30的内部进行加热的观点出发,例如可以在传递模块30的壳体设置加热器(未图示),来加热传递模块30的内部整体。
在以上的实施方式中,对在基板处理装置1中进行COR处理和PHT处理的情况进行了说明,但本发明也能够应用于进行其它处理的情况。例如,本发明对于成膜处理、蚀刻处理等在减压气氛下进行的处理是有用的。
以上参照附图对本发明的优选的实施方式进行了说明,但本发明不限定于该例。应该了解的是,只要是本领域人员就能够在权利要求所记载的构思的范畴内想到各种变更例或修正例是显而易见的,并且关于这些也当然属于本发明的技术范围内。
Claims (11)
1.一种基板处理装置,具备在减压气氛下对基板进行处理的处理室、以及经由闸门来与所述处理室连接的搬送室,所述基板处理装置的特征在于,具有:
第一供气部,其向所述搬送室的内部供给非活性气体;
第二供气部,其对所述闸门供给非活性气体;以及
排气部,其将所述搬送室的内部的气氛排出。
2.根据权利要求1所述的基板处理装置,其特征在于,
对从所述第二供气部供给的非活性气体进行加热。
3.根据权利要求1或2所述的基板处理装置,其特征在于,
所述基板处理装置还具有:
加载互锁室,其经由其它闸门来与所述搬送室连接,并且所述加载互锁室能够将内部在大气压气氛与减压气氛之间进行切换;以及
第三供气部,其对所述其它闸门供给非活性气体。
4.根据权利要求3所述的基板处理装置,其特征在于,
对从所述第三供气部供给的非活性气体进行加热。
5.根据权利要求1至4中的任一项所述的基板处理装置,其特征在于,
所述第一供气部设置于所述搬送室中的一端部,
所述排气部设置于所述搬送室中的与所述一端部相向的另一端部。
6.根据权利要求1至5中的任一项所述的基板处理装置,其特征在于,
在所述搬送室中设置有用于搬送基板的搬送臂,
所述搬送臂将两张基板以在该两张基板之间隔开间隔的方式重叠地保持。
7.一种基板处理方法,使用了基板处理装置,所述基板处理装置具有在减压气氛下对基板进行处理的处理室、以及经由闸门来与所述处理室连接的搬送室,所述基板处理方法的特征在于,
当在所述处理室中进行对基板的处理时以及在所述处理室与所述搬送室之间搬送基板时,从第一供气部向所述搬送室的内部供给非活性气体,
当为了在所述处理室与所述搬送室之间搬送基板而打开所述闸门时,从第二供气部对所述闸门供给非活性气体。
8.根据权利要求7所述的基板处理方法,其特征在于,
对从所述第二供气部供给的非活性气体进行加热。
9.根据权利要求7或8所述的基板处理方法,其特征在于,
所述基板处理装置还具有经由其它闸门与所述搬送室连接并且能够将内部在大气压气氛与减压气氛之间进行切换的加载互锁室,
在所述基板处理方法中,
当在所述加载互锁室中收容有基板时以及在所述加载互锁室与所述搬送室之间搬送基板时,从所述第一供气部向所述搬送室的内部供给非活性气体,
当为了在所述加载互锁室与所述搬送室之间搬送基板而打开所述其它闸门时,从第三供气部对所述其它闸门供给非活性气体。
10.根据权利要求9所述的基板处理方法,其特征在于,
对从所述第三供气部供给的非活性气体进行加热。
11.一种可读取的计算机存储介质,其保存有程序,
程序在控制基板处理装置的控制部的计算机上运行时,使基板处理装置执行根据权利要求7~10中的任一项所述的基板处理方法。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110364467A (zh) * | 2019-06-13 | 2019-10-22 | 上海提牛机电设备有限公司 | 空气阻隔装置、晶圆上料设备与空气阻隔控制方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11948810B2 (en) * | 2017-11-15 | 2024-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for processing substrates or wafers |
US11031264B2 (en) * | 2018-08-15 | 2021-06-08 | Taiwan Semoconductor Manufacturing Co., Ltd. | Semiconductor device manufacturing system |
JP7183635B2 (ja) * | 2018-08-31 | 2022-12-06 | 東京エレクトロン株式会社 | 基板搬送機構、基板処理装置及び基板搬送方法 |
US11414748B2 (en) * | 2019-09-25 | 2022-08-16 | Intevac, Inc. | System with dual-motion substrate carriers |
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US12062562B2 (en) * | 2021-04-22 | 2024-08-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Air curtain for defect reduction |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001345255A (ja) * | 2000-06-01 | 2001-12-14 | Canon Inc | 露光装置、コートディベロップ装置、基板搬送方法、デバイス製造方法、半導体製造工場および露光装置の保守方法 |
JP2009123723A (ja) * | 2007-11-12 | 2009-06-04 | Hitachi High-Technologies Corp | 真空処理装置または真空処理方法 |
CN101652851A (zh) * | 2007-03-29 | 2010-02-17 | 东京毅力科创株式会社 | 真空处理装置、真空处理装置的运行方法和存储介质 |
JP2012160759A (ja) * | 2012-05-15 | 2012-08-23 | Dainippon Screen Mfg Co Ltd | 基板搬送装置およびこれを備えた基板処理装置 |
JP2014103298A (ja) * | 2012-11-21 | 2014-06-05 | Tdk Corp | ロードロックチャンバ |
KR20160038949A (ko) * | 2014-09-30 | 2016-04-08 | 주식회사 원익아이피에스 | 기판 처리 장치 |
CN107154370A (zh) * | 2016-03-02 | 2017-09-12 | 株式会社日立国际电气 | 衬底处理装置、半导体器件的制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6267549B1 (en) * | 1998-06-02 | 2001-07-31 | Applied Materials, Inc. | Dual independent robot blades with minimal offset |
JP2001319885A (ja) * | 2000-03-02 | 2001-11-16 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体製造方法 |
JP2005175281A (ja) * | 2003-12-12 | 2005-06-30 | Canon Inc | 減圧処理装置、露光装置及びデバイスの製造方法 |
JP4414869B2 (ja) | 2004-11-30 | 2010-02-10 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
-
2017
- 2017-09-27 JP JP2017185921A patent/JP6951923B2/ja active Active
-
2018
- 2018-09-13 KR KR1020180109419A patent/KR102185684B1/ko active IP Right Grant
- 2018-09-25 TW TW107133535A patent/TWI797163B/zh active
- 2018-09-26 SG SG10201808438SA patent/SG10201808438SA/en unknown
- 2018-09-27 US US16/144,552 patent/US20190096702A1/en not_active Abandoned
- 2018-09-27 CN CN201811130198.XA patent/CN109560021B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001345255A (ja) * | 2000-06-01 | 2001-12-14 | Canon Inc | 露光装置、コートディベロップ装置、基板搬送方法、デバイス製造方法、半導体製造工場および露光装置の保守方法 |
CN101652851A (zh) * | 2007-03-29 | 2010-02-17 | 东京毅力科创株式会社 | 真空处理装置、真空处理装置的运行方法和存储介质 |
JP2009123723A (ja) * | 2007-11-12 | 2009-06-04 | Hitachi High-Technologies Corp | 真空処理装置または真空処理方法 |
JP2012160759A (ja) * | 2012-05-15 | 2012-08-23 | Dainippon Screen Mfg Co Ltd | 基板搬送装置およびこれを備えた基板処理装置 |
JP2014103298A (ja) * | 2012-11-21 | 2014-06-05 | Tdk Corp | ロードロックチャンバ |
KR20160038949A (ko) * | 2014-09-30 | 2016-04-08 | 주식회사 원익아이피에스 | 기판 처리 장치 |
CN107154370A (zh) * | 2016-03-02 | 2017-09-12 | 株式会社日立国际电气 | 衬底处理装置、半导体器件的制造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110364467A (zh) * | 2019-06-13 | 2019-10-22 | 上海提牛机电设备有限公司 | 空气阻隔装置、晶圆上料设备与空气阻隔控制方法 |
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CN109560021B (zh) | 2023-06-09 |
KR102185684B1 (ko) | 2020-12-02 |
KR20190036476A (ko) | 2019-04-04 |
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TW201923944A (zh) | 2019-06-16 |
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US20190096702A1 (en) | 2019-03-28 |
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