JP6951923B2 - 基板処理装置、基板処理方法及びコンピュータ記憶媒体 - Google Patents
基板処理装置、基板処理方法及びコンピュータ記憶媒体 Download PDFInfo
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Description
前記搬送室に他のゲートを介して接続され、内部を大気圧雰囲気と減圧雰囲気に切り換え可能なロードロック室と、前記他のゲートに対して不活性ガスを供給する第3の給気部と、を有し、前記第3の給気部から供給される不活性ガスは加熱されていることを特徴とする。前記第2の給気部から供給される不活性ガスは加熱されていてもよい。
10 ウェハ保管部
11 ウェハ処理部
23a、23b ロードロックモジュール
26a ゲートバルブ
26b ゲート
30 トランスファモジュール
31 CORモジュール
32 PHTモジュール
40 ウェハ搬送機構
41a、41b 搬送アーム
45a、45b ピック部
45at、45bt 上部ピック
45ab、45bb 下部ピック
46a ゲートバルブ
56b ゲート
50 第1の給気部
52 給気口
60 排気部
62 排気口
70 第2の給気部
72 ノズル
73 ヒータ
80 制御部
100 第3の給気部
102 ノズル
103 ヒータ
W ウェハ
Claims (13)
- 減圧雰囲気下で基板を処理する処理室と、前記処理室にゲートを介して接続された搬送室とを備えた基板処理装置であって、
前記搬送室の内部において基板を搬送する搬送アームと、
前記搬送室の内部に不活性ガスを供給する第1の給気部と、
前記ゲートに対して下方から上方に向けて不活性ガスを供給して、前記ゲートを覆うように不活性ガスのカーテンを形成する第2の給気部と、
前記搬送室の内部の雰囲気を排出する排気部と、を有し、
前記第2の給気部から供給される不活性ガスは加熱されており、
前記処理室に対する前記基板の搬送時において、少なくとも前記搬送アームが前記カーテンを通過することを特徴とする、基板処理装置。 - 前記搬送室に他のゲートを介して接続され、内部を大気圧雰囲気と減圧雰囲気に切り換え可能なロードロック室と、
前記他のゲートに対して不活性ガスを供給する第3の給気部と、をさらに有することを特徴とする、請求項1に記載の基板処理装置。 - 前記第3の給気部から供給される不活性ガスは加熱されていることを特徴とする、請求項2に記載の基板処理装置。
- 減圧雰囲気下で基板を処理する処理室と、前記処理室にゲートを介して接続された搬送室とを備えた基板処理装置であって、
前記搬送室の内部に不活性ガスを供給する第1の給気部と、
前記ゲートに対して不活性ガスを供給する第2の給気部と、
前記搬送室の内部の雰囲気を排出する排気部と、
前記搬送室に他のゲートを介して接続され、内部を大気圧雰囲気と減圧雰囲気に切り換え可能なロードロック室と、
前記他のゲートに対して不活性ガスを供給する第3の給気部と、を有し、
前記第3の給気部から供給される不活性ガスは加熱されていることを特徴とする、基板処理装置。 - 前記第2の給気部から供給される不活性ガスは加熱されていることを特徴とする、請求項4に記載の基板処理装置。
- 前記第1の給気部は前記搬送室における一端部に設けられ、
前記排気部は前記搬送室において前記一端部に対向する他端部に設けられていることを特徴とする、請求項1〜5のいずれか一項に記載の基板処理装置。 - 前記搬送室には基板を搬送する搬送アームが設けられ、
前記搬送アームは、2枚の基板を当該2枚の基板の間に間隔をおいて重なるように保持することを特徴とする、請求項1〜6のいずれか一項に記載の基板処理装置。 - 減圧雰囲気下で基板を処理する処理室と、前記処理室にゲートを介して接続された搬送室とを有する基板処理装置を用いた基板処理方法であって、
前記処理室における基板の処理中、及び前記処理室と前記搬送室の間で基板の搬送中において、第1の給気部から前記搬送室の内部に不活性ガスを供給し、
前記処理室と前記搬送室の間で基板を搬送するために前記ゲートを開いている際、第2の給気部から前記ゲートに対して下方から上方に向けて不活性ガスを供給して、前記ゲートを覆うように不活性ガスのカーテンを形成し、
前記第2の給気部から供給される不活性ガスは加熱されており、
搬送アームによる前記処理室に対する前記基板の搬送時において、少なくとも前記搬送アームが前記カーテンを通過することを特徴とする、基板処理方法。 - 前記基板処理装置は、前記搬送室に他のゲートを介して接続され、内部を大気圧雰囲気と減圧雰囲気に切り換え可能なロードロック室をさらに有し、
前記基板処理方法において、
前記ロードロック室に基板を収容中、及び前記ロードロック室と前記搬送室の間で基板の搬送中において、前記第1の給気部から前記搬送室の内部に不活性ガスを供給し、
前記ロードロック室と前記搬送室の間で基板を搬送するために前記他のゲートを開いている際、第3の給気部から前記他のゲートに対して不活性ガスを供給することを特徴とする、請求項8に記載の基板処理方法。 - 前記第3の給気部から供給される不活性ガスは加熱されていることを特徴とする、請求項9に記載の基板処理方法。
- 減圧雰囲気下で基板を処理する処理室と、前記処理室にゲートを介して接続された搬送室とを有する基板処理装置を用いた基板処理方法であって、
前記基板処理装置は、前記搬送室に他のゲートを介して接続され、内部を大気圧雰囲気と減圧雰囲気に切り換え可能なロードロック室をさらに有し、
前記基板処理方法において、
前記処理室における基板の処理中、及び前記処理室と前記搬送室の間で基板の搬送中において、第1の給気部から前記搬送室の内部に不活性ガスを供給し、
前記処理室と前記搬送室の間で基板を搬送するために前記ゲートを開いている際、第2の給気部から前記ゲートに対して不活性ガスを供給し、
前記ロードロック室に基板を収容中、及び前記ロードロック室と前記搬送室の間で基板の搬送中において、前記第1の給気部から前記搬送室の内部に不活性ガスを供給し、
前記ロードロック室と前記搬送室の間で基板を搬送するために前記他のゲートを開いている際、第3の給気部から前記他のゲートに対して不活性ガスを供給し、
前記第3の給気部から供給される不活性ガスは加熱されていることを特徴とする、基板処理方法。 - 前記第2の給気部から供給される不活性ガスは加熱されていることを特徴とする、請求項11に記載の基板処理方法。
- 請求項8〜12のいずれか一項に記載の基板処理方法を基板処理装置によって実行させるように、当該基板処理装置を制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体。
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