TW201923944A - 基板處理裝置、基板處理方法及電腦記憶媒體 - Google Patents

基板處理裝置、基板處理方法及電腦記憶媒體 Download PDF

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TW201923944A
TW201923944A TW107133535A TW107133535A TW201923944A TW 201923944 A TW201923944 A TW 201923944A TW 107133535 A TW107133535 A TW 107133535A TW 107133535 A TW107133535 A TW 107133535A TW 201923944 A TW201923944 A TW 201923944A
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酒井俊充
山下榮
長久保啟一
佐佐木義明
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日商東京威力科創股份有限公司
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Abstract

在具備有於減壓氛圍下來處理基板之處理室以及搬送室的基板處理裝置中，降低從處理室被帶進搬送室之異物(沉積物)。
一種基板處理裝置，係具備有於減壓氛圍下來處理基板之COR模組以及透過閘門來連接於COR模組之移轉模組，並具有：第1供氣部，係將非活性氣體供給至移轉模組之內部；第2供氣部，係對閥門來供給非活性氣體；以及排氣部，係將移轉模組內部之氛圍排出。

Description

基板處理裝置、基板處理方法及電腦記憶媒體
本發明係關於一種具備有於減壓氛圍下來處理基板之處理室以及透過閘門來連接於該處理室之搬送室的基板處理裝置、使用該基板處理裝置之基板處理方法及電腦記憶媒體。
在例如半導體元件之製造程序中，係使收納有半導體晶圓(以下有稱為「晶圓」之情況)之處理室成為減壓狀態，而進行對該晶圓施予既定處理之各式處理工序。又，該等複數處理工序係使用例如於共通搬送室之周圍複數配置有處理室之基板處理裝置來加以進行。然後，藉由以複數處理室來對複數晶圓一併進行處理，便可提升基板處理效率。
此般基板處理裝置中，係在相對於處理室來搬出入晶圓時，開啟分離處理室與搬送室之閘門(閘閥)，而使用搬送室所設置之搬送臂來搬送晶圓。在連通處理室與搬送室時，會使處理室內之氛圍流入至搬送室，便有因例如為有機物之塵埃的污染物(以下有稱為「污染」之情況)或粒子等，而使搬送室內部被污染之情況。另外，搬送室內之污染或粒子的產生源並不限於上述處理室，該等可因各種原因而產生在搬送室內。
於是，專利文獻1便提議一種處理裝置，係具備有用以將非活性氣體供給至搬送室內之非活性氣體供給管線以及將搬送室內排氣之排氣管線。在相關情況下，在處理室中對晶圓進行處理的期間，便會藉由持續供給非活性氣體至搬送室內，來將該搬送室內維持為清潔乾淨。
先前技術文獻
專利文獻
專利文獻1：日本專利第4414869號公報
如上述，基板處理裝置會對晶圓進行各式處理，例如COR(Chemical Oxide Removal)處理與PHT(Post Heat Treatment)處理。COR處理係使處理氣體與晶圓上所形成之膜反應而生成生成物。相關情況下，在相對於進行COR處理之處理室而藉由搬送臂來搬出入晶圓時，便會讓有機物之生成物(以下有稱為「沉積物」之情況)附著於晶圓或搬送臂之情況。特別是因為COR處理是在減壓氛圍下加以進行，故晶圓或搬送臂會被冷卻，而使沉積物容易附著。
然而，僅以專利文獻1所記載之方法來將非活性氣體供給至搬送室內，這樣是無法降低附著於晶圓或搬送臂之沉積物的。
本發明有鑑於相關觀點，其目的在提供一種基板處理裝置，係具備有於減壓氛圍下來處理基板之處理室以及搬送室，而降低從處理室被帶進搬送室之異物(沉積物)。
為了達成上述目的，本發明係一種基板處理裝置，係具備有於減壓氛圍下來處理基板之處理室以及透過閘門來連接於該處理室之搬送室，該基板處理裝置具有：第1供氣部，係將非活性氣體供給至該搬送室之內部；第2供氣部，係對該閥門供給非活性氣體；以及排氣部，係將該搬送室內部之氛圍排出。
根據本發明，便會在處理室中的基板之處理中，以及在處理室與搬送室之間的基板之搬送中，從第1供氣部來將非活性氣體供給至搬送室之內部，進一步地藉由從排氣部來將搬送室之內部排氣，便可去除污染或粒子等，而將搬送室內部之氛圍維持為清潔乾淨。
又，在為了於處理室與搬送室之間搬送基板而開啟閘門時，藉由從第2供氣部來對閥門供給非活性氣體，來在閘門形成非活性氣體之氣簾。如此一來，由於例如搬送中之基板或搬送臂會通過非活性氣體之氣簾，故在處理室所產生之沉積物便會難以附著於該基板或搬送臂。從而，便可降低從處理室被帶進搬送室之沉積物。
從該第2供氣部所供給之非活性氣體可被加熱。
該基板處理裝置係進一步地具有：裝載互鎖室，係透過另一閘門來連接於該搬送室，而可將內部切換為大氣氛圍與減壓氛圍；以及第3供氣部，係對該另一閘門供給非活性氣體。
從該第3供氣部所供給之非活性氣體可被加熱。
該第1供氣部係設置於該搬送室之一端部；該排氣部係可設置於該搬送室中對向於該一端部之另端部。
該搬送室係設置有搬送基板之搬送臂；該搬送臂係可讓2片基板以在該2片基板之間隔有間隔而重疊之方式來加以保持。
另一觀點的本發明係使用基板處理裝置之基板處理方法，該基板處理裝置係具有於減壓氛圍下來處理基板之處理室以及透過閘門來連接於該處理室之搬送室；在該處理室中的基板之處理中，以及在該處理室與該搬送室之間的基板之搬送中，會從第1供氣部來將非活性氣體供給至該搬送室之內部；在為了於該處理室與該搬送室之間搬送基板而開啟該閘門時，會從第2供氣部來對該閥門供給非活性氣體。
從該第2供氣部所供給之非活性氣體可被加熱。
該基板處理裝置係進一步地具有：裝載互鎖室，係透過另一閘門來連接於該搬送室，而可將內部切換為大氣氛圍與減壓氛圍；該基板處理方法中，係可在將基板收納於該裝載互鎖室中，以及於該裝載互鎖室與該搬送室之間的基板之搬送中，會從該第1供氣部來將非活性氣體供給至該搬送室內部，而在為了於該裝載互鎖室與該搬送室之間搬送基板而開啟該另一閘門時，會從第3供氣部來對該另一閥門供給非活性氣體。
從該第3供氣部所供給之非活性氣體可被加熱。
根據另一觀點的本發明，便提供一種電腦記憶媒體，係可讀取而儲存有程式，該程式係以藉由基板處理裝置來實行該基板處理方法之方式，來在控制該基板處理裝置之控制部的電腦上進行動作。
根據本發明，便可將搬送室內部之氛圍維持為清潔乾淨，並可降低從處理室被帶進搬送室之異物(沉積物)。其結果，便可提升基板處理的可靠性，並提高製品的產率。
以下，便參照圖式就本發明實施形態來加以說明。另外，本說明書及圖式中，係對實質上具有相同機能構成之要素附加相同符號並省略重複說明。
首先，就本實施形態相關之基板處理裝置構成來加以說明。圖1係顯示本實施形態相關之基板處理裝置1的概略構成之平面圖。另外，本實施形態係就於基板處理裝置1中對作為基板之晶圓W進行COR處理與PHT處理的情況來加以說明。
如圖1所示，基板處理裝置1係具有將保管複數晶圓W之晶圓保管部10以及對晶圓W施予既定處理之晶圓處理部11連接為一體的構成。
晶圓保管部10係具有：為保管複數晶圓W之容器，且為箍圈20之載置台的裝載埠21；從裝載埠21所載置之箍圈20來收授所保管之晶圓W，或將在晶圓處理部11已施予既定處理後之晶圓W引導至箍圈20之裝載模組22；以及為了在裝載模組22與下述移轉模組30之間收授晶圓W，而暫時地保持晶圓W的裝載互鎖室之裝載互鎖模組23a、23b。
箍圈20係以等間隔來將複數晶圓W重疊為多層來進行收納。又，裝載埠21所載置之箍圈20內部通常會被大氣所充滿，但該內部亦有被氮氣等所充滿而密閉的情況。
裝載模組22係內部會由矩形之框體所構成，框體內部係維持在大氣壓氛圍。在構成裝載模組22之框體長邊的一側面係並排設置有例如3個裝載埠21。又，裝載模組22係具有可在框體內部移動於其長邊方向的搬送臂(未圖示)。搬送臂係將晶圓W從裝載埠21所載置之箍圈20搬送至裝載互鎖模組23a，或是將晶圓W從裝載互鎖模組23b搬出於箍圈20。
由於裝載互鎖模組23a會將在大氣氛圍下載置於裝載埠21的箍圈20所收納的晶圓W引導至內部為減壓氛圍的下述移轉模組30，故會暫時保持晶圓W。裝載互鎖模組23a係具有以重疊之方式來保持2片晶圓W的上部儲存部24a與下部儲存部24b。
裝載互鎖模組23a會透過設置有閘閥25a之閘門25b來連接於裝載模組22。藉由此閘閥25a，便可確保裝載互鎖模組23a與裝載模組22之間的氣密性與互相連通。又，裝載互鎖模組23a會透過設置有閘閥26a之閘門26b來連接於下述移轉模組30。藉由此閘閥26a，便可確保裝載互鎖模組23a與移轉模組30之間的氣密性與互相連通。
進一步地，裝載互鎖模組23a係連接有會供給氣體之供氣部(未圖示)與會排出氣體之排氣部(未圖示)，而構成為會藉由供氣部與排氣部來使內部可切換為大氣壓氛圍與減壓氛圍。另外，裝載互鎖模組23b亦具有與裝載互鎖模組23a相同之構成。
晶圓處理部11係具有：作為同時搬送2片晶圓W之搬送室的移轉模組30；對從移轉模組30所搬送後之晶圓W施予COR處理之COR模組31；以及對從移轉模組30所搬送後之晶圓W施予PHT處理的PHT模組32。COR模組31係相對於移轉模組30而設置為複數，例如4個，PHT模組32係設置為複數，例如2個。另外，移轉模組30、COR模組31以及PHT模組32之內部會分別維持在減壓氛圍。
COR模組31內部係設置有將2片晶圓W並排載置於水平方向的2個台座33a、33b。COR模組31係藉由將晶圓W並排載置於台座33a、33b，來同時對2片晶圓W施予COR處理。又，COR模組31係連接有會供給處理氣體或沖淨氣體等的供氣部(未圖示)與排出氣體之排氣部(未圖示)。
PHT模組32內部係設置有將2片晶圓W並排載置於水平方向的2個台座34a、34b。PHT模組32係藉由將晶圓W並排載置於台座34a、34b，來同時對2片晶圓W施予PHT處理。又，PHT模組32係連接有會供給氣體的供氣部(未圖示)與排出氣體之排氣部(未圖示)。
移轉模組30會將未處理之晶圓W從晶圓保管部10來依序搬送至COR模組31、PHT模組32，而將處理完畢之晶圓W從PHT模組32來搬出至晶圓保管部10。移轉模組30係由內部是矩形之框體所構成，框體內部係維持在減壓氛圍。
移轉模組30內部係設置有搬送晶圓W之晶圓搬送機構40。晶圓搬送機構40係具有：以重疊之方式來保持2片晶圓W而進行移動的搬送臂41a、41b；可旋轉地支撐搬送臂41a、41b的旋轉台42；搭載有旋轉台42之旋轉載置台43。移轉模組30內部係設置有延伸於其長邊方向的引導軌道44。旋轉載置台43係設置於引導軌道44上，晶圓搬送機構40係構成為可沿著引導軌道44來加以移動。
在此，便就上述搬送臂41a、41b之構成來詳細說明。圖2係顯示搬送臂41a、41b之構成的說明圖，(a)係顯示搬送臂41a、41b整體的立體圖，(b)係搬送臂41a之拾取部45a的側視圖。
如圖2所示，搬送臂41a、41b係分別具有於前端中搭載2片晶圓W的拾取部45a、45b。搬送臂41a係具有以複數接點(關節)部來可旋轉地將複數節段(節)連結的連結機構。搬送臂41a的連結機構一端係藉由旋轉台42來被自由旋轉地加以支撐。又，搬送臂41a之連結機構的另端係自由端，且於另端設置有拾取部45a。
拾取部45a係具有讓二股叉狀之上部拾取器45at與下部拾取器45ab分離既定距離t而層積之構成。拾取部45a會在上部拾取器45at上面搭載1片晶圓W，而在下部拾取器45ab上面(上部拾取器45at與下部拾取器ab之間)進一步地搭載1片晶圓W。亦即，搬送臂41a會藉由拾取部45a來讓2片晶圓W以於其間隔有間隔而重疊之方式來加以保持。
又，搬送臂41a會藉由連結機構一端的旋轉以及連結機構之另端的移動，來將搭載於另端拾取部45a的各晶圓W移動至所欲位置。另外，搬送臂41b係具有與搬送臂41a相同之構成。由於搬送臂41a、41b可一次搭載2片晶圓W，故晶圓搬送機構40係可藉由搬送臂41a、41b來同時搬送4片晶圓W。
如圖1所示，移轉模組30如上述，係透過閘閥26a、26b來連接有裝載互鎖模組23a、23b。又，移轉模組30係透過設置有閘閥46a之閘門46b來連接有COR模組31。藉由此閘閥46a，便可確保移轉模組30與COR模組31之間的氣密性與互相連通。進一步地，移轉模組30係透過設置有閘閥47a之閘門47b來連接有PHT模組32。藉由此閘閥47a，便可確保移轉模組30與PHT模組32之間的氣密性與互相連通。
移轉模組30係將會在裝載互鎖模組23a中以重疊之方式並藉由上部儲存器24a與下部儲存器24b所保持的2片晶圓W，以在搬送臂41a中亦會重疊之方式來加以保持而收取，再搬送至COR模組31與PHT模組32。又，搬送臂41b會以重疊的方式來保持在PHT模組32中施予處理後的兩片晶圓W，再搬出至裝載互鎖模組23b。
如上述，移轉模組30內部係維持在減壓氛圍。在此，便就移轉模組30內部之氛圍控制來詳細說明。圖3係顯示移轉模組30所設置之供氣部與排氣部的概略構成之說明圖。
如圖3所示，移轉模組30係設置有將非活性氣體供給至內部之第1供氣部50。第1供氣部50係具有第1供氣管線51(供氣管)。第1供氣管線51一端部係連通於會在移轉模組30底面一端部開口的供氣口52。第1供氣管線51另端部係連通於會將非活性氣體(例如氮氣)儲存於內部的氣體供給源53。第1供氣管線51係從供氣口52朝向氣體供給源53依序設置有開關閥54、壓力調整閥55(PCV：Pressure Control Valve)、流量計56。壓力調整閥55係連接於測量移轉模組30內部壓力之壓力計57，而基於該壓力計57之測量結果來調整非活性氣體之壓力。
移轉模組30係設置有將內部氛圍排出之排氣部60。排氣部60係具有排氣管線61(排氣管)。排氣管線61一端部係連通於會在移轉模組30底面另端部開口的排氣口62。亦即，供氣口52與排氣口62會對向配置。排氣管線61另端部係連通於會將移轉模組30內部抽真空之乾式泵63。排氣管線61係從排氣口62朝向乾式泵63依序設置有開閉閥64、蝶閥65。
在此，由於非活性氣體之流量會因為乾式泵63之排氣性能或配管直徑、配管長度而有所改變，故移轉模組30內部之持續壓力會在複數基板處理裝置1之間有所改變。本實施形態中，係可藉由設置蝶閥65來抑制裝置之間的壓力差，而可將持續壓力的非活性氣體流量固定化。藉此，便可完成無須依存乾式泵63之排氣性能或配管直徑、配管長度的移轉模組30。
移轉模組30與COR模組31之間所設置的閘門46b係設置有將非活性氣體供給至該閘門46b的第2供氣部70。第2供氣部70係具有第2供氣管線71(供氣管)。第2供氣管線71一端部會連通於噴嘴72。噴嘴72係複數形成有非活性氣體之供給口(未圖示)。噴嘴72係設置於例如閘門46b下方，並以覆蓋閘門46b之方式來供給非活性氣體。第2供氣管線71另端部會連通於氣體供給源53。亦即，氣體供給源53係共通設置於第1供氣部50與第2供氣部70。第2供氣管線71係從噴嘴72朝向氣體供給源53來依序設置有加熱器73、開閉閥74、流量計56。然後，會從第2供氣部70來對閘門46b供給藉由加熱器73所加熱後之非活性氣體，而以覆蓋該閘門46b之方式來形成非活性氣體之氣簾。另外，圖示範例中第2供氣部70係針對1個閘門46b來加以設置，但針對其他3個閘門46b亦同樣設置。
如圖1所示，上述基板處理裝置1係設置有控制部80。控制部80係例如電腦，並具有程式儲存部(未圖示)。程式儲存部係儲存有控制基板處理裝置1中之晶圓W的處理之程式。又，程式儲存部亦儲存有控制上述各種處理裝置或搬送裝置等的驅動系統之動作，而用以實現基板處理裝置1之下述顯影處理的程式。另外，該程式係被記錄於記憶媒體，且會從該記憶媒體來被安裝於控制部80，該記憶媒體係可讓電腦讀取的例如電腦可讀取之硬碟(HDD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。
本實施形態相關之基板處理裝置1係構成為上述，接著，便就基板處理裝置1之晶圓處理來加以說明。
首先，將收納有複數晶圓W之箍圈20載置於裝載埠21。之後，便藉由裝載模組22來將2片晶圓W從箍圈20取出，而搬入至裝載互鎖模組23a。在將晶圓W搬入至裝載互鎖模組23a時，便關閉閘閥25a，而將裝載互鎖模組23a內密閉減壓。之後，便開啟閘閥26a，使裝載互鎖模組23a內部與移轉模組30內部連通。
此時，如圖4所示，移轉模組30內部係從第1供氣部50之供氣口52來供給有非活性氣體，而從排氣部60之排氣口62來將氛圍排出。移轉模組30內部係維持在既定壓力之減壓氛圍。此移轉模組30內部的壓力會較各COR模組31與PHT模組32之內部要高，而為正壓。又，移轉模組30內部係形成有從供氣口52朝向排氣口62的一方向之非活性氣體的流向(圖4中之箭頭)。藉由此一方向之非活性氣體的流向，便可適當地將存在於移轉模組30內部的污染或粒子等排出，而使內部氛圍維持在清潔乾淨。
接著，在使裝載互鎖模組23a內部與移轉模組30內部連通時，便會藉由晶圓搬送機構40之搬送臂41a，並以重疊的方式來保持2片晶圓W，再從裝載互鎖模組23a搬入至移轉模組30。接著，晶圓搬送機構40便會移動到其中一個COR模組31之前。
接著，便開啟閘閥46a，而使保持2片晶圓W之搬送臂41a進入至COR模組31。然後，便會從搬送臂41a來將晶圓W一片片地載置到各台座33a、33b。之後，搬送臂41a便會從COR模組31退出。
此時，如圖5所示，便會從第2供氣部70之噴嘴72來對閘門46b供給非活性氣體，而以覆蓋閘門46b之方式來形成有非活性氣體之氣簾(圖5中之箭頭)。又，非活性氣體會藉由加熱器73來被加熱至120℃~300℃。然後，保持2片晶圓W之搬送臂41a便會通過被加熱後的非活性氣體之氣簾。在此，雖然在COR模組31中之COR處理會產生為有機生成物之沉積物，但由於如此般，搬送臂41a會通過被加熱後的非活性氣體之氣簾，故可抑制沉積物會附著於搬送臂41a與晶圓W。從而，即便搬送臂41a從COR模組31退出，仍可抑制沉積物會被帶進移轉模組30之情事。
另外，如此般在將晶圓W搬入COR模組31而開啟閘閥46a時，由於移轉模組30內部會較COR模組31內部要為正壓，故氛圍便會從移轉模組30流向COR模組31。此時，由於移轉模組30內部會被進一步地減壓，故為了成為既定壓力，第1供氣部50便會藉由壓力調整閥55來調整非活性氣體之壓力。然後，在移轉模組30內部與COR模組31內部成為等壓時，氛圍便不會流向COR模組31。
接著，在搬送臂41a從COR模組31退出時，便會關閉閘閥46a，而在COR模組31中對2片晶圓W進行COR處理。又，在關閉閘閥46a時，亦會停止來自第2供氣部70之非活性氣體的供給。
接著，在COR模組31中之COR處理結束時，便會開啟閘閥46a，而讓搬送臂41a進入至COR模組31。然後，便會從台座33a、33b來將2片晶圓W收授至搬送臂41a，而在搬送臂41a以重疊的方式來保持2片晶圓W。之後，搬送臂41a便會從COR模組31退出，而關閉閘閥46a。
此時，便會再次對閘門46b從第2供氣部70之噴嘴72來供給加熱後的非活性氣體，而以覆蓋閘門46b的方式來形成非活性氣體之氣簾。然後，保持2片晶圓W之搬送臂41a便會通過被加熱後的非活性氣體之氣簾。在此，由於COR處理會在減壓氛圍下進行，故施予該COR處理後之晶圓W便會被冷卻。然後，一般而言，被冷卻後者係易於讓沉積物附著。此點在本實施形態中，由於如此般地讓搬送臂41a通過被加熱後之非活性氣體的氣簾，故可抑制沉積物會附著於搬送臂41a與晶圓W之情事。從而，即便搬送臂41a從COR模組31退出，仍可抑制沉積物會被帶進移轉模組30之情事。
另外，在COR處理中，以及相對於COR模組31來搬出入晶圓W中，移轉模組30係持續進行第1供氣部50之非活性氣體的供給與排氣部60之排氣。
接著，晶圓搬送機構40會移動至其中一個PHT模組32前。接著，便會開啟閘閥47a，而使保持2片晶圓W之搬送臂41a進入至PHT模組32。然後，便會從搬送臂41a來將晶圓W一片片地載置到各台座34a、34b。之後，搬送臂41a便會從PHT模組32退出。接著，便會關閉閘閥47a，而對2片晶圓W進行PHT處理。
接著，在PHT處理結束時，便會開啟閘閥47a，而使搬送臂41b進入至PHT模組32。然後，便會從台座34a、34b來將2片晶圓W收授至搬送臂41b，而在搬送臂41b以重疊的方式來保持2片晶圓W。之後，搬送臂41b便會從PHT模組32退出，而關閉閘閥47a。
另外，在PHT處理中，以及相對於PHT模組32來搬出入晶圓W中，移轉模組30係持續進行第1供氣部50之非活性氣體的供給與排氣部60之排氣。
之後，便會開啟閘閥26a，而藉由晶圓搬送機構40來將2片晶圓W搬入至裝載互鎖模組23b。在將晶圓W搬入至裝載互鎖模組23b內時，便會關閉閘閥26a，而將裝載互鎖模組23b內密閉而大氣開放。之後，2片晶圓W便會藉由裝載模組22來被收納於箍圈20。如此一來，便結束基板處理裝置1的一連串晶圓處理。
根據上述實施形態，便會在COR模組31與PHT模組32之晶圓W的處理中，以及相對於COR模組31與PHT模組32來搬出入晶圓W中，移轉模組30係從第1供氣部50來供給非活性氣體，而進一步地從排氣部60排氣。因此，便可去除污染或粒子等，而將移轉模組30氛圍維持在清潔乾淨。
又，在COR模組31與移轉模組30之間搬出入晶圓W時，會藉由從第2供氣部70來對閘門47b供給加熱後之非活性氣體，來在閘門47b形成非活性氣體之氣簾。如此一來，由於搬送中之晶圓W及搬送臂41a會通過非活性氣體之氣簾，故在COR模組31所產生之沉積物便會難以附著在晶圓W及搬送臂41a。又，由於非活性氣體之氣簾會以覆蓋閘門46b之方式來被加以形成，故即便搬送臂41a具有兩層拾取器45at、45ab，仍可共享此沉積附著抑制效果。從而，便可降低從COR模組31被帶進移轉模組30之沉積物的情事。
在此，COR模組31中之COR處理雖會從台座33a、33b來產生沉積物，但由於搬送臂41a係具有上部拾取器45at與下部拾取器45ab，故相較於上部拾取器45at，沉積物會易於附著於位在台座33a、33b側的下部拾取器45ab內面。此點在本實施形態中，如圖5所示，係將噴嘴72設置於閘門46b下方，而從閘門46b下方朝向上方來形成非活性氣體之氣簾。在相關情況下，由於非活性氣體會直接吹拂下部拾取器45ab內面，故可更加適當地抑制沉積物會附著於該下部拾取器45ab內面之情事。
另外，上述實施形態的基板處理裝置1中，雖將第2供氣部70之噴嘴72設置於閘門46b下方，但噴嘴72之配置並不限於此，只要以讓從噴嘴72所供給之非活性氣體能覆蓋閘門46b之方式來配置的話即可。例如噴嘴72係可被配置於閘門46b上方，而從閘門46b上方來供給非活性氣體，或是噴嘴72亦可被配置於閘門46b之上下兩邊，而從閘門46b上方與下方來供給非活性氣體。又，噴嘴72亦可被配置於閘門46b側邊，而從閘門46b側邊來供給非活性氣體。
上述實施形態之基板處理裝置1中，雖然從第2供氣部70所供給之非活性氣體會藉由加熱器73來被加熱，但此加熱並非必要。即便從第2供氣部70來供給常溫之非活性氣體，亦可達成上述沉積物降低之效果。但是，供給加熱後之非活性氣體會使沉積物難以附著於晶圓W或搬送臂41a，其效果會較好。
上述實施形態之基板處理裝置1中，在移轉模組30與裝載互鎖模組23a之間所設置的閘門26b如圖6所示，係可設置有將非活性氣體供給至閘門26b之第3供氣部100。第3供氣部100係具有與第2供氣部70相同之構成。亦即，第3供氣部100係具有第3供氣管線101(供氣管)。第3供氣管線101一端部會連通於噴嘴102。噴嘴102係複數形成有非活性氣體之供給口(未圖示)。噴嘴102係設置於例如閘門26bb下方，而以覆蓋閘門26b之方式來供給非活性氣體。第3供氣管線101另端部會連通於氣體供給源53。亦即，氣體供給源53會共通設置於第1供氣部50、第2供氣部70、第3供氣部100。第3供氣管線101係從噴嘴102朝向氣體供給源53來依序設置有加熱器103、開閉閥104、流量計56。另外，圖示範例中，第3供氣部100是相對於其中1個閘門26b來加以設置，亦會相對於其他另1個閘門26b來同樣地設置。
在相關情況下，於裝載互鎖模組23a與移轉模組30之間搬出入晶圓W時，便會從第3供氣部100來對閘門26b供給藉由加熱器103而加熱後之非活性氣體，並以覆蓋該閘門26b之方式來形成非活性氣體之氣簾。然後，搬送臂41a便會通過被加熱後的非活性氣體之氣簾。在此，裝載互鎖模組23a係切換於大氣壓氛圍與減壓氛圍，而可在減壓氛圍下保持晶圓W。在相關情況下，由於晶圓W會被冷卻，故會使粒子等容易附著。此點在本實施形態中，由於搬送臂41a會通過被加熱後的非活性氣體之氣簾，故可抑制粒子等會附著於搬送臂41a與晶圓W之情事。從而，便可抑制粒子等會被帶進移轉模組30之情事。
上述實施形態之基板處理裝置中，雖第1供氣部50之供氣口52是設置於移轉模組30一端部，而排氣部60之排氣口62是設置於移轉模組30另端部，但該等供氣口52與排氣口62之配置並不限於此。例如供氣口52與排氣口62之配置係可相反地將供氣口52設置於另端部，並將排氣口62設置於一端部。又，如圖7所示，供氣口52係可複數(例如在2處)設置於一端部，排氣口62係可複數(例如在2處)設置於另端部。
上述實施形態之基板處理裝置1中，第1供氣部50係可使流量計56具有流量調整機能(MFC：Mass Flow Controller)。又，排氣部60係可設置自動壓力控制閥(APC：Auto Pressure Controller)來取代蝶閥65。在相關情況下，可自動控制供給系統與排氣系統，而可實現更嚴密的氛圍控制。
在上述實施形態之基板處理裝置1中，第1供氣部50之第1供氣管線51係設置有加熱器(未圖示)，從該第1供氣部50所供給之非活性氣體係可被加熱。非活性氣體會被加熱至例如120℃~300℃。在相關情況下，於移轉模組30內部中，係可更適宜地抑制污染或粒子會附著於晶圓W及各種構件之情事。另外，從加熱移轉模組30內部之觀點看來，係可將加熱器(未圖示)設置於例如移轉模組30之框體，來加熱移轉模組30內部整體。
上述實施形態中，雖已就在基板處理裝置1中進行COR處理與PHT處理之情況來加以說明，但本發明亦可適用於進行其他處理的情況。本發明可用在例如成膜處理或蝕刻處理等的在減壓氛圍下所進行之處理。
以上，雖已參照添附圖式就本發明適合的實施形態來加以說明，但本發明並不限於相關範例。若為所屬技術領域中具有通常知識者，很明顯可在申請專利範圍所記載之思想範疇內思及各種變形例或修正例，關於該等亦可明白當然是屬於本發明之技術範圍。
1‧‧‧基板處理裝置
10‧‧‧晶圓保管部
11‧‧‧晶圓處理部
23a、23b‧‧‧裝載互鎖模組
26a‧‧‧閘閥
26b‧‧‧閘門
30‧‧‧移轉模組
31‧‧‧COR模組
32‧‧‧PHT模組
40‧‧‧晶圓搬送機構
41a、41b‧‧‧搬送臂
45a、45b‧‧‧拾取部
45at、45bt‧‧‧上部拾取器
45ab、45bb‧‧‧下部拾取器
46a‧‧‧閘閥
56b‧‧‧閘門
50‧‧‧第1供氣部
52‧‧‧供氣口
60‧‧‧排氣部
62‧‧‧排氣口
70‧‧‧第2供氣部
72‧‧‧噴嘴
73‧‧‧加熱部
80‧‧‧控制部
100‧‧‧第3供氣部
102‧‧‧噴嘴
103‧‧‧加熱器
W‧‧‧晶圓
圖1係顯示本實施形態相關之基板處理裝置的概略構成之平面圖。
圖2係顯示搬送臂之構成的說明圖，(a)係顯示搬送臂整體之立體圖，(b)係搬送臂之拾取部的側視圖。
圖3係顯示移轉模組所設置之供氣部與排氣部的概略構成之說明圖。
圖4係顯示移轉模組中之非活性氣體的流向之說明圖。
圖5係顯示閘門中之非活性氣的流向之說明圖。
圖6係顯示另一實施形態相關之移轉模組所設置的供氣部與排氣部之概略構成的說明圖。
圖7係顯示另一實施形態相關之移轉模組中的非活性氣體之流向的說明圖。
無

Claims (11)

  1. 一種基板處理裝置，係具備有於減壓氛圍下來處理基板之處理室以及透過閘門來連接於該處理室之搬送室，該基板處理裝置具有： 第1供氣部，係將非活性氣體供給至該搬送室之內部； 第2供氣部，係對該閥門供給非活性氣體；以及 排氣部，係將該搬送室內部之氛圍排出。
  2. 如申請專利範圍第1項之基板處理裝置，其中從該第2供氣部所供給之非活性氣體會被加熱。
  3. 如申請專利範圍第1或2項之基板處理裝置，其係進一步地具有： 裝載互鎖室，係透過另一閘門來連接於該搬送室，而可將內部切換為大氣氛圍與減壓氛圍；以及 第3供氣部，係對該另一閘門供給非活性氣體。
  4. 如申請專利範圍第3項之基板處理裝置，其中從該第3供氣部所供給之非活性氣體會被加熱。
  5. 如申請專利範圍第1或2項之基板處理裝置，其中該第1供氣部係設置於該搬送室之一端部； 該排氣部係設置於該搬送室中對向於該一端部之另端部。
  6. 如申請專利範圍第1或2項之基板處理裝置，其中該搬送室係設置有搬送基板之搬送臂； 該搬送臂係讓2片基板以在該2片基板之間隔有間隔而重疊之方式來加以保持。
  7. 一種基板處理方法，係使用基板處理裝置之基板處理方法，該基板處理裝置係具有於減壓氛圍下來處理基板之處理室以及透過閘門來連接於該處理室之搬送室； 在該處理室中的基板之處理中，以及在該處理室與該搬送室之間的基板之搬送中，會從第1供氣部來將非活性氣體供給至該搬送室之內部； 在為了於該處理室與該搬送室之間搬送基板而開啟該閘門時，會從第2供氣部來對該閥門供給非活性氣體。
  8. 如申請專利範圍第7項之基板處理方法，其中從該第2供氣部所供給之非活性氣體會被加熱。
  9. 如申請專利範圍第7或8項之基板處理方法，其中該基板處理裝置係進一步地具有：裝載互鎖室，係透過另一閘門來連接於該搬送室，而可將內部切換為大氣氛圍與減壓氛圍； 該基板處理方法中，係在將基板收納於該裝載互鎖室中，以及於該裝載互鎖室與該搬送室之間的基板之搬送中，會從該第1供氣部來將非活性氣體供給至該搬送室內部，而在為了於該裝載互鎖室與該搬送室之間搬送基板而開啟該另一閘門時，會從第3供氣部來對該另一閥門供給非活性氣體。
  10. 如申請專利範圍第9項之基板處理方法，其中從該第3供氣部所供給之非活性氣體會被加熱。
  11. 一種電腦記憶媒體，係可讀取而儲存有程式，該程式係以藉由基板處理裝置來實行如申請專利範圍第7至10項中任一項的基板處理方法之方式，來在控制該基板處理裝置之控制部的電腦上進行動作。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI754845B (zh) * 2019-09-25 2022-02-11 美商因特瓦克公司 具有雙模式移動基板載具的系統

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11948810B2 (en) * 2017-11-15 2024-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for processing substrates or wafers
US11031264B2 (en) * 2018-08-15 2021-06-08 Taiwan Semoconductor Manufacturing Co., Ltd. Semiconductor device manufacturing system
JP7183635B2 (ja) * 2018-08-31 2022-12-06 東京エレクトロン株式会社 基板搬送機構、基板処理装置及び基板搬送方法
CN110364467A (zh) * 2019-06-13 2019-10-22 上海提牛机电设备有限公司 空气阻隔装置、晶圆上料设备与空气阻隔控制方法
JP7154325B2 (ja) * 2021-01-20 2022-10-17 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
US12062562B2 (en) * 2021-04-22 2024-08-13 Taiwan Semiconductor Manufacturing Co., Ltd. Air curtain for defect reduction

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6267549B1 (en) * 1998-06-02 2001-07-31 Applied Materials, Inc. Dual independent robot blades with minimal offset
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP3595756B2 (ja) * 2000-06-01 2004-12-02 キヤノン株式会社 露光装置、リソグラフィ装置、ロードロック装置、デバイス製造方法およびリソグラフィ方法
JP2005175281A (ja) * 2003-12-12 2005-06-30 Canon Inc 減圧処理装置、露光装置及びデバイスの製造方法
JP4414869B2 (ja) 2004-11-30 2010-02-10 株式会社日立ハイテクノロジーズ 真空処理装置
JP4985031B2 (ja) * 2007-03-29 2012-07-25 東京エレクトロン株式会社 真空処理装置、真空処理装置の運転方法及び記憶媒体
JP2009123723A (ja) * 2007-11-12 2009-06-04 Hitachi High-Technologies Corp 真空処理装置または真空処理方法
JP5283770B2 (ja) * 2012-05-15 2013-09-04 大日本スクリーン製造株式会社 基板搬送装置およびこれを備えた基板処理装置
JP6191853B2 (ja) * 2012-11-21 2017-09-06 Tdk株式会社 ロードロックチャンバ
KR102046592B1 (ko) * 2014-09-30 2019-11-22 주식회사 원익아이피에스 기판 처리 장치
JP6240695B2 (ja) * 2016-03-02 2017-11-29 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI754845B (zh) * 2019-09-25 2022-02-11 美商因特瓦克公司 具有雙模式移動基板載具的系統

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