CN109524320B - 半导体制造装置及半导体器件的制造方法 - Google Patents

半导体制造装置及半导体器件的制造方法 Download PDF

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Publication number
CN109524320B
CN109524320B CN201811090665.0A CN201811090665A CN109524320B CN 109524320 B CN109524320 B CN 109524320B CN 201811090665 A CN201811090665 A CN 201811090665A CN 109524320 B CN109524320 B CN 109524320B
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bare chip
area
lighting device
lighting
illumination
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Chinese (zh)
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CN109524320A (zh
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小桥英晴
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Fasford Technology Co Ltd
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Fasford Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting

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  • Die Bonding (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201811090665.0A 2017-09-19 2018-09-18 半导体制造装置及半导体器件的制造方法 Active CN109524320B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-178969 2017-09-19
JP2017178969A JP7010633B2 (ja) 2017-09-19 2017-09-19 半導体製造装置および半導体装置の製造方法

Publications (2)

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CN109524320A CN109524320A (zh) 2019-03-26
CN109524320B true CN109524320B (zh) 2023-03-24

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Country Link
JP (1) JP7010633B2 (https=)
KR (1) KR102130386B1 (https=)
CN (1) CN109524320B (https=)
TW (1) TWI678746B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7151642B2 (ja) * 2019-06-28 2022-10-12 住友電気工業株式会社 面発光レーザ、その製造方法およびその検査方法
JP7296835B2 (ja) * 2019-09-19 2023-06-23 株式会社ディスコ ウェーハの処理方法、及び、チップ測定装置
JP7377655B2 (ja) * 2019-09-19 2023-11-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN111029268A (zh) * 2019-12-23 2020-04-17 中芯长电半导体（江阴）有限公司 一种打线机台
JP7437987B2 (ja) * 2020-03-23 2024-02-26 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN112992692B (zh) * 2021-05-19 2021-07-20 佛山市联动科技股份有限公司 一种全自动切割引线的方法及系统
JP7635075B2 (ja) * 2021-05-28 2025-02-25 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
WO2025144103A1 (en) * 2023-12-27 2025-07-03 Semiconductor Technologies & Instruments Pte Ltd System and method for inspecting devices for internal defects at about sidewalls thereof caused by wafer singulation processes

Citations (2)

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CN105229779A (zh) * 2013-08-14 2016-01-06 株式会社新川 半导体制造装置以及半导体装置的制造方法
CN107121433A (zh) * 2016-02-24 2017-09-01 株式会社迪思科 检查装置和激光加工装置

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JPS5538003A (en) * 1978-09-08 1980-03-17 Hitachi Ltd Rectilinear pattern detecting device
JP2003185593A (ja) 2001-12-21 2003-07-03 Nec Electronics Corp ウェーハ外観検査装置
DE112005001294T5 (de) 2004-06-04 2007-04-26 Tokyo Seimitsu Co., Ltd. Halbleiteroberflächenprüfungsvorrichtung sowie Beleuchtungsverfahren
TWI412736B (zh) * 2009-12-04 2013-10-21 Delta Electronics Inc 基板內部缺陷檢查裝置及方法
US8766192B2 (en) * 2010-11-01 2014-07-01 Asm Assembly Automation Ltd Method for inspecting a photovoltaic substrate
WO2012081587A1 (ja) * 2010-12-14 2012-06-21 株式会社ニコン 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス
JP5277266B2 (ja) * 2011-02-18 2013-08-28 株式会社日立ハイテクインスツルメンツ ダイボンダ及び半導体製造方法
JP2013197226A (ja) * 2012-03-19 2013-09-30 Hitachi High-Tech Instruments Co Ltd ダイボンディング方法及びダイボンダ
JP2014060249A (ja) * 2012-09-18 2014-04-03 Hitachi High-Tech Instruments Co Ltd ダイボンダ、および、ダイの位置認識方法
KR101431917B1 (ko) 2012-12-27 2014-08-27 삼성전기주식회사 반도체 패키지의 검사장비
KR101981182B1 (ko) * 2014-12-05 2019-05-22 가부시키가이샤 알박 기판 감시장치 및 기판 감시방법
JP6685126B2 (ja) * 2015-12-24 2020-04-22 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP6669523B2 (ja) * 2016-02-15 2020-03-18 ファスフォードテクノロジ株式会社 ダイボンダおよび半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105229779A (zh) * 2013-08-14 2016-01-06 株式会社新川 半导体制造装置以及半导体装置的制造方法
CN107121433A (zh) * 2016-02-24 2017-09-01 株式会社迪思科 检查装置和激光加工装置

Also Published As

Publication number Publication date
JP2019054203A (ja) 2019-04-04
TW201929113A (zh) 2019-07-16
KR102130386B1 (ko) 2020-07-06
CN109524320A (zh) 2019-03-26
TWI678746B (zh) 2019-12-01
KR20190032195A (ko) 2019-03-27
JP7010633B2 (ja) 2022-01-26

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