KR102130386B1 - 반도체 제조 장치 및 반도체 장치의 제조 방법 - Google Patents

반도체 제조 장치 및 반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR102130386B1
KR102130386B1 KR1020180105215A KR20180105215A KR102130386B1 KR 102130386 B1 KR102130386 B1 KR 102130386B1 KR 1020180105215 A KR1020180105215 A KR 1020180105215A KR 20180105215 A KR20180105215 A KR 20180105215A KR 102130386 B1 KR102130386 B1 KR 102130386B1
Authority
KR
South Korea
Prior art keywords
die
lighting device
area
illuminates
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020180105215A
Other languages
English (en)
Korean (ko)
Other versions
KR20190032195A (ko
Inventor
히데하루 고바시
Original Assignee
파스포드 테크놀로지 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 파스포드 테크놀로지 주식회사 filed Critical 파스포드 테크놀로지 주식회사
Publication of KR20190032195A publication Critical patent/KR20190032195A/ko
Application granted granted Critical
Publication of KR102130386B1 publication Critical patent/KR102130386B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H01L21/67242—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H01L21/52—
    • H01L21/67092—
    • H01L21/67121—
    • H01L21/67132—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting

Landscapes

  • Die Bonding (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020180105215A 2017-09-19 2018-09-04 반도체 제조 장치 및 반도체 장치의 제조 방법 Active KR102130386B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-178969 2017-09-19
JP2017178969A JP7010633B2 (ja) 2017-09-19 2017-09-19 半導体製造装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20190032195A KR20190032195A (ko) 2019-03-27
KR102130386B1 true KR102130386B1 (ko) 2020-07-06

Family

ID=65770976

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180105215A Active KR102130386B1 (ko) 2017-09-19 2018-09-04 반도체 제조 장치 및 반도체 장치의 제조 방법

Country Status (4)

Country Link
JP (1) JP7010633B2 (https=)
KR (1) KR102130386B1 (https=)
CN (1) CN109524320B (https=)
TW (1) TWI678746B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220161174A (ko) * 2021-05-28 2022-12-06 파스포드 테크놀로지 주식회사 다이 본딩 장치 및 반도체 장치의 제조 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7151642B2 (ja) * 2019-06-28 2022-10-12 住友電気工業株式会社 面発光レーザ、その製造方法およびその検査方法
JP7296835B2 (ja) * 2019-09-19 2023-06-23 株式会社ディスコ ウェーハの処理方法、及び、チップ測定装置
JP7377655B2 (ja) * 2019-09-19 2023-11-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN111029268A (zh) * 2019-12-23 2020-04-17 中芯长电半导体（江阴）有限公司 一种打线机台
JP7437987B2 (ja) * 2020-03-23 2024-02-26 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN112992692B (zh) * 2021-05-19 2021-07-20 佛山市联动科技股份有限公司 一种全自动切割引线的方法及系统
WO2025144103A1 (en) * 2023-12-27 2025-07-03 Semiconductor Technologies & Instruments Pte Ltd System and method for inspecting devices for internal defects at about sidewalls thereof caused by wafer singulation processes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101431917B1 (ko) 2012-12-27 2014-08-27 삼성전기주식회사 반도체 패키지의 검사장비
JP2017117916A (ja) 2015-12-24 2017-06-29 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538003A (en) * 1978-09-08 1980-03-17 Hitachi Ltd Rectilinear pattern detecting device
JP2003185593A (ja) 2001-12-21 2003-07-03 Nec Electronics Corp ウェーハ外観検査装置
DE112005001294T5 (de) 2004-06-04 2007-04-26 Tokyo Seimitsu Co., Ltd. Halbleiteroberflächenprüfungsvorrichtung sowie Beleuchtungsverfahren
TWI412736B (zh) * 2009-12-04 2013-10-21 Delta Electronics Inc 基板內部缺陷檢查裝置及方法
US8766192B2 (en) * 2010-11-01 2014-07-01 Asm Assembly Automation Ltd Method for inspecting a photovoltaic substrate
WO2012081587A1 (ja) * 2010-12-14 2012-06-21 株式会社ニコン 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス
JP5277266B2 (ja) * 2011-02-18 2013-08-28 株式会社日立ハイテクインスツルメンツ ダイボンダ及び半導体製造方法
JP2013197226A (ja) * 2012-03-19 2013-09-30 Hitachi High-Tech Instruments Co Ltd ダイボンディング方法及びダイボンダ
JP2014060249A (ja) * 2012-09-18 2014-04-03 Hitachi High-Tech Instruments Co Ltd ダイボンダ、および、ダイの位置認識方法
TWI570823B (zh) * 2013-08-14 2017-02-11 新川股份有限公司 半導體製造裝置以及半導體裝置的製造方法
KR101981182B1 (ko) * 2014-12-05 2019-05-22 가부시키가이샤 알박 기판 감시장치 및 기판 감시방법
JP6669523B2 (ja) * 2016-02-15 2020-03-18 ファスフォードテクノロジ株式会社 ダイボンダおよび半導体装置の製造方法
JP6683500B2 (ja) * 2016-02-24 2020-04-22 株式会社ディスコ 検査装置及びレーザー加工装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101431917B1 (ko) 2012-12-27 2014-08-27 삼성전기주식회사 반도체 패키지의 검사장비
JP2017117916A (ja) 2015-12-24 2017-06-29 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220161174A (ko) * 2021-05-28 2022-12-06 파스포드 테크놀로지 주식회사 다이 본딩 장치 및 반도체 장치의 제조 방법
KR102829382B1 (ko) * 2021-05-28 2025-07-04 파스포드 테크놀로지 주식회사 다이 본딩 장치 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
JP2019054203A (ja) 2019-04-04
TW201929113A (zh) 2019-07-16
CN109524320A (zh) 2019-03-26
TWI678746B (zh) 2019-12-01
CN109524320B (zh) 2023-03-24
KR20190032195A (ko) 2019-03-27
JP7010633B2 (ja) 2022-01-26

Similar Documents

Publication Publication Date Title
KR102130386B1 (ko) 반도체 제조 장치 및 반도체 장치의 제조 방법
TWI624887B (zh) 半導體製造裝置及半導體裝置的製造方法
KR102219591B1 (ko) 반도체 제조 장치 및 반도체 장치의 제조 방법
KR102100889B1 (ko) 다이 본딩 장치 및 반도체 장치의 제조 방법
JP7225337B2 (ja) 半導体製造装置および半導体装置の製造方法
KR102304880B1 (ko) 반도체 제조 장치 및 반도체 장치의 제조 방법
TWI799912B (zh) 黏晶裝置及半導體裝置的製造方法
JP7029900B2 (ja) ダイボンディング装置および半導体装置の製造方法
CN113436986B (zh) 芯片贴装装置及半导体器件的制造方法
KR102829382B1 (ko) 다이 본딩 장치 및 반도체 장치의 제조 방법
JP7851125B2 (ja) 半導体製造装置、検査装置および半導体装置の製造方法
JP2023100562A (ja) 半導体製造装置、検査装置および半導体装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000