JP7010633B2 - 半導体製造装置および半導体装置の製造方法 - Google Patents

半導体製造装置および半導体装置の製造方法 Download PDF

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Publication number
JP7010633B2
JP7010633B2 JP2017178969A JP2017178969A JP7010633B2 JP 7010633 B2 JP7010633 B2 JP 7010633B2 JP 2017178969 A JP2017178969 A JP 2017178969A JP 2017178969 A JP2017178969 A JP 2017178969A JP 7010633 B2 JP7010633 B2 JP 7010633B2
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die
region
lighting device
image pickup
illuminates
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Japanese (ja)
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JP2019054203A5 (https=
JP2019054203A (ja
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英晴 小橋
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Fasford Technology Co Ltd
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Fasford Technology Co Ltd
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Priority to JP2017178969A priority Critical patent/JP7010633B2/ja
Priority to TW107130824A priority patent/TWI678746B/zh
Priority to KR1020180105215A priority patent/KR102130386B1/ko
Priority to CN201811090665.0A priority patent/CN109524320B/zh
Publication of JP2019054203A publication Critical patent/JP2019054203A/ja
Publication of JP2019054203A5 publication Critical patent/JP2019054203A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting

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  • Die Bonding (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2017178969A 2017-09-19 2017-09-19 半導体製造装置および半導体装置の製造方法 Active JP7010633B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017178969A JP7010633B2 (ja) 2017-09-19 2017-09-19 半導体製造装置および半導体装置の製造方法
TW107130824A TWI678746B (zh) 2017-09-19 2018-09-03 半導體製造裝置以及半導體裝置的製造方法
KR1020180105215A KR102130386B1 (ko) 2017-09-19 2018-09-04 반도체 제조 장치 및 반도체 장치의 제조 방법
CN201811090665.0A CN109524320B (zh) 2017-09-19 2018-09-18 半导体制造装置及半导体器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017178969A JP7010633B2 (ja) 2017-09-19 2017-09-19 半導体製造装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2019054203A JP2019054203A (ja) 2019-04-04
JP2019054203A5 JP2019054203A5 (https=) 2020-08-13
JP7010633B2 true JP7010633B2 (ja) 2022-01-26

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JP2017178969A Active JP7010633B2 (ja) 2017-09-19 2017-09-19 半導体製造装置および半導体装置の製造方法

Country Status (4)

Country Link
JP (1) JP7010633B2 (https=)
KR (1) KR102130386B1 (https=)
CN (1) CN109524320B (https=)
TW (1) TWI678746B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7151642B2 (ja) * 2019-06-28 2022-10-12 住友電気工業株式会社 面発光レーザ、その製造方法およびその検査方法
JP7296835B2 (ja) * 2019-09-19 2023-06-23 株式会社ディスコ ウェーハの処理方法、及び、チップ測定装置
JP7377655B2 (ja) * 2019-09-19 2023-11-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN111029268A (zh) * 2019-12-23 2020-04-17 中芯长电半导体（江阴）有限公司 一种打线机台
JP7437987B2 (ja) * 2020-03-23 2024-02-26 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN112992692B (zh) * 2021-05-19 2021-07-20 佛山市联动科技股份有限公司 一种全自动切割引线的方法及系统
JP7635075B2 (ja) * 2021-05-28 2025-02-25 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
WO2025144103A1 (en) * 2023-12-27 2025-07-03 Semiconductor Technologies & Instruments Pte Ltd System and method for inspecting devices for internal defects at about sidewalls thereof caused by wafer singulation processes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003185593A (ja) 2001-12-21 2003-07-03 Nec Electronics Corp ウェーハ外観検査装置
WO2005119227A1 (ja) 2004-06-04 2005-12-15 Tokyo Seimitsu Co., Ltd. 半導体外観検査装置及び照明方法
JP2017117916A (ja) 2015-12-24 2017-06-29 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法

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JPS5538003A (en) * 1978-09-08 1980-03-17 Hitachi Ltd Rectilinear pattern detecting device
TWI412736B (zh) * 2009-12-04 2013-10-21 Delta Electronics Inc 基板內部缺陷檢查裝置及方法
US8766192B2 (en) * 2010-11-01 2014-07-01 Asm Assembly Automation Ltd Method for inspecting a photovoltaic substrate
WO2012081587A1 (ja) * 2010-12-14 2012-06-21 株式会社ニコン 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス
JP5277266B2 (ja) * 2011-02-18 2013-08-28 株式会社日立ハイテクインスツルメンツ ダイボンダ及び半導体製造方法
JP2013197226A (ja) * 2012-03-19 2013-09-30 Hitachi High-Tech Instruments Co Ltd ダイボンディング方法及びダイボンダ
JP2014060249A (ja) * 2012-09-18 2014-04-03 Hitachi High-Tech Instruments Co Ltd ダイボンダ、および、ダイの位置認識方法
KR101431917B1 (ko) 2012-12-27 2014-08-27 삼성전기주식회사 반도체 패키지의 검사장비
TWI570823B (zh) * 2013-08-14 2017-02-11 新川股份有限公司 半導體製造裝置以及半導體裝置的製造方法
KR101981182B1 (ko) * 2014-12-05 2019-05-22 가부시키가이샤 알박 기판 감시장치 및 기판 감시방법
JP6669523B2 (ja) * 2016-02-15 2020-03-18 ファスフォードテクノロジ株式会社 ダイボンダおよび半導体装置の製造方法
JP6683500B2 (ja) * 2016-02-24 2020-04-22 株式会社ディスコ 検査装置及びレーザー加工装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003185593A (ja) 2001-12-21 2003-07-03 Nec Electronics Corp ウェーハ外観検査装置
WO2005119227A1 (ja) 2004-06-04 2005-12-15 Tokyo Seimitsu Co., Ltd. 半導体外観検査装置及び照明方法
JP2017117916A (ja) 2015-12-24 2017-06-29 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JP2019054203A (ja) 2019-04-04
TW201929113A (zh) 2019-07-16
KR102130386B1 (ko) 2020-07-06
CN109524320A (zh) 2019-03-26
TWI678746B (zh) 2019-12-01
CN109524320B (zh) 2023-03-24
KR20190032195A (ko) 2019-03-27

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