TWI678746B - 半導體製造裝置以及半導體裝置的製造方法 - Google Patents
半導體製造裝置以及半導體裝置的製造方法 Download PDFInfo
- Publication number
- TWI678746B TWI678746B TW107130824A TW107130824A TWI678746B TW I678746 B TWI678746 B TW I678746B TW 107130824 A TW107130824 A TW 107130824A TW 107130824 A TW107130824 A TW 107130824A TW I678746 B TWI678746 B TW I678746B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- lighting device
- field
- lighting
- illumination
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
Landscapes
- Die Bonding (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Wire Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-178969 | 2017-09-19 | ||
| JP2017178969A JP7010633B2 (ja) | 2017-09-19 | 2017-09-19 | 半導体製造装置および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201929113A TW201929113A (zh) | 2019-07-16 |
| TWI678746B true TWI678746B (zh) | 2019-12-01 |
Family
ID=65770976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107130824A TWI678746B (zh) | 2017-09-19 | 2018-09-03 | 半導體製造裝置以及半導體裝置的製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7010633B2 (https=) |
| KR (1) | KR102130386B1 (https=) |
| CN (1) | CN109524320B (https=) |
| TW (1) | TWI678746B (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7151642B2 (ja) * | 2019-06-28 | 2022-10-12 | 住友電気工業株式会社 | 面発光レーザ、その製造方法およびその検査方法 |
| JP7296835B2 (ja) * | 2019-09-19 | 2023-06-23 | 株式会社ディスコ | ウェーハの処理方法、及び、チップ測定装置 |
| JP7377655B2 (ja) * | 2019-09-19 | 2023-11-10 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
| CN111029268A (zh) * | 2019-12-23 | 2020-04-17 | 中芯长电半导体(江阴)有限公司 | 一种打线机台 |
| JP7437987B2 (ja) * | 2020-03-23 | 2024-02-26 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
| CN112992692B (zh) * | 2021-05-19 | 2021-07-20 | 佛山市联动科技股份有限公司 | 一种全自动切割引线的方法及系统 |
| JP7635075B2 (ja) * | 2021-05-28 | 2025-02-25 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
| WO2025144103A1 (en) * | 2023-12-27 | 2025-07-03 | Semiconductor Technologies & Instruments Pte Ltd | System and method for inspecting devices for internal defects at about sidewalls thereof caused by wafer singulation processes |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201120436A (en) * | 2009-12-04 | 2011-06-16 | Delta Electronics Inc | A apparatus and method for inspecting inner defect of substrate |
| CN102565090A (zh) * | 2010-11-01 | 2012-07-11 | 先进自动器材有限公司 | 用于检查光伏衬底的方法 |
| CN106920762A (zh) * | 2015-12-24 | 2017-07-04 | 捷进科技有限公司 | 半导体制造装置、半导体器件的制造方法及芯片贴装机 |
| JP2017147258A (ja) * | 2016-02-15 | 2017-08-24 | ファスフォードテクノロジ株式会社 | ダイボンダおよび半導体装置の製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538003A (en) * | 1978-09-08 | 1980-03-17 | Hitachi Ltd | Rectilinear pattern detecting device |
| JP2003185593A (ja) | 2001-12-21 | 2003-07-03 | Nec Electronics Corp | ウェーハ外観検査装置 |
| DE112005001294T5 (de) | 2004-06-04 | 2007-04-26 | Tokyo Seimitsu Co., Ltd. | Halbleiteroberflächenprüfungsvorrichtung sowie Beleuchtungsverfahren |
| WO2012081587A1 (ja) * | 2010-12-14 | 2012-06-21 | 株式会社ニコン | 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス |
| JP5277266B2 (ja) * | 2011-02-18 | 2013-08-28 | 株式会社日立ハイテクインスツルメンツ | ダイボンダ及び半導体製造方法 |
| JP2013197226A (ja) * | 2012-03-19 | 2013-09-30 | Hitachi High-Tech Instruments Co Ltd | ダイボンディング方法及びダイボンダ |
| JP2014060249A (ja) * | 2012-09-18 | 2014-04-03 | Hitachi High-Tech Instruments Co Ltd | ダイボンダ、および、ダイの位置認識方法 |
| KR101431917B1 (ko) | 2012-12-27 | 2014-08-27 | 삼성전기주식회사 | 반도체 패키지의 검사장비 |
| TWI570823B (zh) * | 2013-08-14 | 2017-02-11 | 新川股份有限公司 | 半導體製造裝置以及半導體裝置的製造方法 |
| KR101981182B1 (ko) * | 2014-12-05 | 2019-05-22 | 가부시키가이샤 알박 | 기판 감시장치 및 기판 감시방법 |
| JP6683500B2 (ja) * | 2016-02-24 | 2020-04-22 | 株式会社ディスコ | 検査装置及びレーザー加工装置 |
-
2017
- 2017-09-19 JP JP2017178969A patent/JP7010633B2/ja active Active
-
2018
- 2018-09-03 TW TW107130824A patent/TWI678746B/zh active
- 2018-09-04 KR KR1020180105215A patent/KR102130386B1/ko active Active
- 2018-09-18 CN CN201811090665.0A patent/CN109524320B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201120436A (en) * | 2009-12-04 | 2011-06-16 | Delta Electronics Inc | A apparatus and method for inspecting inner defect of substrate |
| CN102565090A (zh) * | 2010-11-01 | 2012-07-11 | 先进自动器材有限公司 | 用于检查光伏衬底的方法 |
| CN102565090B (zh) | 2010-11-01 | 2016-08-03 | 先进自动器材有限公司 | 用于检查光伏衬底的方法 |
| CN106920762A (zh) * | 2015-12-24 | 2017-07-04 | 捷进科技有限公司 | 半导体制造装置、半导体器件的制造方法及芯片贴装机 |
| JP2017147258A (ja) * | 2016-02-15 | 2017-08-24 | ファスフォードテクノロジ株式会社 | ダイボンダおよび半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019054203A (ja) | 2019-04-04 |
| TW201929113A (zh) | 2019-07-16 |
| KR102130386B1 (ko) | 2020-07-06 |
| CN109524320A (zh) | 2019-03-26 |
| CN109524320B (zh) | 2023-03-24 |
| KR20190032195A (ko) | 2019-03-27 |
| JP7010633B2 (ja) | 2022-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI678746B (zh) | 半導體製造裝置以及半導體裝置的製造方法 | |
| TWI624887B (zh) | 半導體製造裝置及半導體裝置的製造方法 | |
| KR102100889B1 (ko) | 다이 본딩 장치 및 반도체 장치의 제조 방법 | |
| JP7225337B2 (ja) | 半導体製造装置および半導体装置の製造方法 | |
| JP7102271B2 (ja) | 半導体製造装置および半導体装置の製造方法 | |
| JP7299728B2 (ja) | 半導体製造装置および半導体装置の製造方法 | |
| JP7029900B2 (ja) | ダイボンディング装置および半導体装置の製造方法 | |
| TWI799912B (zh) | 黏晶裝置及半導體裝置的製造方法 | |
| TWI858453B (zh) | 半導體製造裝置、檢查裝置及半導體裝置的製造方法 | |
| TWI765517B (zh) | 晶粒接合裝置及半導體裝置的製造方法 | |
| TWI823297B (zh) | 黏晶裝置及半導體裝置的製造方法 | |
| TWI786739B (zh) | 晶粒接合裝置及半導體裝置之製造方法 |