CN109328400B - 发光器件封装和光源设备 - Google Patents

发光器件封装和光源设备 Download PDF

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Publication number
CN109328400B
CN109328400B CN201780033280.8A CN201780033280A CN109328400B CN 109328400 B CN109328400 B CN 109328400B CN 201780033280 A CN201780033280 A CN 201780033280A CN 109328400 B CN109328400 B CN 109328400B
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China
Prior art keywords
light emitting
emitting device
disposed
electrode
hole
Prior art date
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CN201780033280.8A
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English (en)
Chinese (zh)
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CN109328400A (zh
Inventor
李太星
任仓满
宋俊午
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Lekin Semiconductor Co Ltd
Original Assignee
Suzhou Liyu Semiconductor Co ltd
LG Innotek Co Ltd
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Application filed by Suzhou Liyu Semiconductor Co ltd, LG Innotek Co Ltd filed Critical Suzhou Liyu Semiconductor Co ltd
Priority to CN202310261116.XA priority Critical patent/CN116169221A/zh
Priority claimed from PCT/KR2017/011077 external-priority patent/WO2018221789A1/ko
Publication of CN109328400A publication Critical patent/CN109328400A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

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  • Led Device Packages (AREA)
CN201780033280.8A 2017-05-30 2017-09-29 发光器件封装和光源设备 Active CN109328400B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310261116.XA CN116169221A (zh) 2017-05-30 2017-09-29 发光器件封装和光源设备

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2017-0067187 2017-05-30
KR20170067187 2017-05-30
KR1020170082348A KR102356216B1 (ko) 2017-05-30 2017-06-29 발광소자 패키지 및 광원 장치
KR10-2017-0082348 2017-06-29
PCT/KR2017/011077 WO2018221789A1 (ko) 2017-05-30 2017-09-29 발광소자 패키지 및 광원 장치

Related Child Applications (1)

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CN202310261116.XA Division CN116169221A (zh) 2017-05-30 2017-09-29 发光器件封装和光源设备

Publications (2)

Publication Number Publication Date
CN109328400A CN109328400A (zh) 2019-02-12
CN109328400B true CN109328400B (zh) 2023-04-04

Family

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CN202310261116.XA Pending CN116169221A (zh) 2017-05-30 2017-09-29 发光器件封装和光源设备
CN201780033280.8A Active CN109328400B (zh) 2017-05-30 2017-09-29 发光器件封装和光源设备

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Country Link
US (1) US11038087B2 (enExample)
EP (1) EP3439049B1 (enExample)
JP (1) JP6964345B2 (enExample)
KR (2) KR102356216B1 (enExample)
CN (2) CN116169221A (enExample)

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US11367820B2 (en) * 2017-09-01 2022-06-21 Suzhou Lekin Semiconductor Co., Ltd. Light emitting device package and light source device
DE102018123031A1 (de) * 2018-09-19 2020-03-19 Osram Opto Semiconductors Gmbh Bauelement und herstellungsverfahren für ein bauelement
KR102382253B1 (ko) 2018-10-30 2022-04-01 주식회사 엘지에너지솔루션 메인 스위치를 위한 드라이버 회로 및 그것을 포함하는 제어 장치
JP7227478B2 (ja) * 2019-03-20 2023-02-22 日亜化学工業株式会社 樹脂パッケージおよび発光装置
US20220328718A1 (en) * 2019-08-28 2022-10-13 Kyocera Corporation Light emitting element mounting package and light emitting device
KR20230019404A (ko) * 2020-06-03 2023-02-08 니치아 카가쿠 고교 가부시키가이샤 면상 광원 및 그 제조 방법
JP7277865B2 (ja) * 2020-10-29 2023-05-19 日亜化学工業株式会社 面状光源及びその製造方法
DE102022126374A1 (de) * 2022-10-11 2024-04-11 Ams-Osram International Gmbh Verfahren zum herstellen eines bauelements und bauelement

Citations (4)

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JP4069587B2 (ja) * 1998-12-02 2008-04-02 セイコーエプソン株式会社 半導体チップの実装方法
JP2012033724A (ja) * 2010-07-30 2012-02-16 Dainippon Printing Co Ltd 樹脂付リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法
EP2461382A2 (en) * 2010-12-02 2012-06-06 Samsung LED Co., Ltd. Light Emitting Diode Package and Manufacturing Method Thereof
EP2950359A1 (en) * 2014-05-28 2015-12-02 LG Innotek Co., Ltd. For wafer bonding optimized contact structure of a light emitting device

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KR101366268B1 (ko) * 2007-07-16 2014-02-21 엘지전자 주식회사 발광 소자 패키지와 서브마운트 및 그 제조방법
KR101265642B1 (ko) 2007-07-23 2013-05-22 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
KR101144202B1 (ko) 2009-11-02 2012-05-10 삼성전기주식회사 엘이디 내장형 인쇄회로기판
JP2011181699A (ja) * 2010-03-01 2011-09-15 Seiko Instruments Inc 発光デバイス
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KR20110111173A (ko) 2010-04-02 2011-10-10 김경동 Ｌｅｄ 조명용 리드 프레임 및 그 제조방법
KR101020963B1 (ko) 2010-04-23 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5426481B2 (ja) * 2010-05-26 2014-02-26 株式会社東芝 発光装置
TWI435484B (zh) * 2011-04-07 2014-04-21 矽品精密工業股份有限公司 發光二極體封裝結構
JP5835133B2 (ja) * 2012-07-10 2015-12-24 豊田合成株式会社 Ｌｅｄ搭載用基板及びその製造方法
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KR102098245B1 (ko) * 2014-02-11 2020-04-07 삼성전자 주식회사 광원 패키지 및 그를 포함하는 표시 장치
JP6407544B2 (ja) * 2014-03-28 2018-10-17 シチズン電子株式会社 Ｌｅｄ発光装置及びｌｅｄ発光装置の製造方法
KR102407329B1 (ko) 2015-08-05 2022-06-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 광원 모듈 및 이를 구비한 조명 장치

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JP4069587B2 (ja) * 1998-12-02 2008-04-02 セイコーエプソン株式会社 半導体チップの実装方法
JP2012033724A (ja) * 2010-07-30 2012-02-16 Dainippon Printing Co Ltd 樹脂付リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法
EP2461382A2 (en) * 2010-12-02 2012-06-06 Samsung LED Co., Ltd. Light Emitting Diode Package and Manufacturing Method Thereof
EP2950359A1 (en) * 2014-05-28 2015-12-02 LG Innotek Co., Ltd. For wafer bonding optimized contact structure of a light emitting device

Also Published As

Publication number Publication date
KR102437770B1 (ko) 2022-08-30
EP3439049A1 (en) 2019-02-06
EP3439049B1 (en) 2022-08-10
EP3439049A4 (en) 2019-06-19
JP6964345B2 (ja) 2021-11-10
KR102356216B1 (ko) 2022-01-28
US20200274042A1 (en) 2020-08-27
CN116169221A (zh) 2023-05-26
JP2020522117A (ja) 2020-07-27
CN109328400A (zh) 2019-02-12
KR20180131303A (ko) 2018-12-10
KR20180131336A (ko) 2018-12-10
US11038087B2 (en) 2021-06-15

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Effective date of registration: 20210810

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Applicant after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Applicant before: LG INNOTEK Co.,Ltd.

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Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Applicant after: Suzhou Liyu Semiconductor Co.,Ltd.

Address before: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Applicant before: Suzhou Leyu Semiconductor Co.,Ltd.

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