CN103199187B - 一种发光二极管封装基板与封装结构及其制作方法 - Google Patents
一种发光二极管封装基板与封装结构及其制作方法 Download PDFInfo
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Abstract
本发明公开了一种适用于共晶接合制程之覆晶式发光二极管之封装基板,其至少包含:基板本体,具有第一表面,其上分布有至少一个单元,所述每个单元对应一个发光二极管芯粒,其具有彼此相互电隔离的第一区域和第二区域;凹槽结构,介于两个区域之间,其顶部开口宽度小于所述待封装芯粒的宽度。其可解决原本共晶制程覆晶型发光二极管因芯片与基板间距离过小而无法进行底层填充胶材(under-fill)制程而导致后续基板移除及表面粗化制程无法进行的问题。
Description
技术领域
本发明属发光二极管之封装领域,具体涉及一种封装基板与封装结构及其制作方法。
背景技术
覆晶式(英文为Flip-chip,简称FC)封装于发光二极管的应用随着其优越的散热特性及较佳的组件机械强度逐渐被证实与量产,覆晶式封装技术于发光二极管的应用即为重要课题之一。覆晶式封装应用于发光二极管的应用主要分为两种封装方式:第一种为金凸块键合制程(英文为Au-stubbumpingprocess),系先将金凸块种至封装基板上,其金凸块于板材上的相对位置与芯片上的电极相同,而后藉由超音波压合,使芯片上的电极与封装基板上的金凸块接合完成电性连接,此法对封装基板要求度低,制程弹性大,但其金凸块成本高,且芯片对位需要较高之精准度,因此机台昂贵,生产速度慢,导致整个生产成本过高;第二种为共晶接合制程(英文为Eutecticbondingprocess),以蒸镀或溅镀将选定之共晶金属制作于芯片上,藉由低温助焊剂将芯片预贴合至封装基板上,在高于共晶金属之熔点下回焊,使芯片与封装基板形成接合,金属成本低,生产速度快,对机台精度要求低,但是该制程对封装基板平整度以及其制程精度要求高。此外,为了增加发光二极管之发光效率,进一步将发光二极管之生长基板移除,此为一有效增加覆晶式发光二极管发光效率的方法,但覆晶式封装于芯片与封装基板间留下的空隙,严重影响生长基板移除的良率。
发明内容
本发明提供适用于共晶接合制程之覆晶式发光二极管之封装基板与封装结构及其制作方,解决原本共晶制程覆晶型发光二极管因芯片与基板间距离过小而无法进行底层填充胶材(under-fill)制程而导致后续基板移除及表面粗化制程无法进行的问题。
本发明提供一种适用于共晶接合制程之覆晶式发光二极管之封装基板,包含:基板本体,具有第一表面,其上分布有至少一个单元,所述一个单元对应一个待封装发光二极管芯粒,其具有彼此相互电隔离的第一区域和第二区域;凹槽结构,介于两个区域之间,其顶部开口开口朝向待封装发光二极管芯粒,且宽度小于所述待封装发光二极管芯粒的宽度。
在本发明的一些实施例中,所述凹槽结构至少具有一侧开口位于基板本体的侧壁。
在本发明的一些实施例中,所述凹槽结构的截面形状为矩形或者倒梯形或者倒三角形或者弧形。
在本发明的一些实施例中,所述凹槽结构的高度差介于50微米至300微米之间。
在本发明的一些实施例中,所述凹槽结构的顶部开口宽度介于100微米至1000微米之间。
在本发明的一些实施例中,所述凹槽结构为矩形或倒梯形时,定义封装基板具有第一表面,第二表面以及第三表面,其中第二表面在相对高度上位于第一表面之下且第二表面位于两个第一表面间,第三表面与第一表面及第二表面相连,则容易理解,两个第二表面与第三表面构成凹槽结构。
在本发明的一些实施例中,所述凹槽结构为矩形或倒梯形时,第二表面与第三表面相交角度介于45度至90度之间。
在本发明的一些实施例中,所述基板本体可为Si,AlN,Al2O3,环氧树脂模塑料(英文为EpoxyMoldingCompound,缩写为EMC)等材料。
本发明还提供一种适用于共晶接合制程之覆晶式发光二极管之封装结构,包括:基板本体,具有第一表面,其上分布有至少一个单元,所述一个单元对应一个待封装发光二极管芯粒,其具有彼此相互电隔离的第一区域和第二区域;凹槽结构,介于两个区域之间,其顶部开口宽度小于所述待封装发光二极管芯粒的宽度,且凹槽结构至少具有一侧开口位于基板本体的侧壁;第一导电层,位于第一区域之上;第二导电层,位于第二区域之上;发光二极管芯片,具有第一电极和第二电极,两个电极之间存有间隙;第一导电层与第一电极,第二导电层与第二电极两两对位并固晶连接;胶材,填入至第一电极与第二电极之间的间隙及凹槽结构。
本发明再提供一种覆晶式发光二极管之封装结构制作方法,包含:提供基板本体,具有第一表面,其上分布有至少一个单元,所述一个单元对应一个待封装发光二极管芯粒,其具有彼此相互电隔离的第一区域和第二区域;在基板本体第一表面上形成开口,在两个区域之间形成凹槽结构,且顶部开口宽度小于所述待封装发光二极管芯粒的宽度,凹槽结构至少具有一侧开口位于基板本体的侧壁,制得封装基板;在第一区域之上制作第一导电层;在第二区域之上制作第二导电层;提供发光二极管,具有第一电极和第二电极,两个电极之间存有间隙;将第一导电层与第一电极,第二导电层与第二电极两两对位,采用覆晶封装制程使得发光二极管固晶连接于所述封装基板上;将胶材填入至第一电极与第二电极之间的间隙及凹槽结构,如此构成发光二极管封装结构。
在本发明的一些实施例中,于封装基板本体第一表面上形成顶部开口的方式,可以通过钻石刀或者经黄光光罩、干/湿法蚀刻制作而成。
在本发明的一些实施例中,经覆晶封装至封装基板上之发光二极管,可进一步利用激光剥离移除其生长基板。
在本发明的一些实施例中,移除生长基板后裸露之表面,可进一步做表面粗化处理。
本发明的封装基板可应用于覆晶式发光二极管,藉由第一表面及第二表面的高度差,可有效避免芯片固晶时产生接触不良造成组件失效。同时,可利用胶材填入至第一电极与第二电极之间的间隙及凹槽结构,可避免后续激光剥离生长基板时对芯片造成的损伤,最后藉由外延层表面粗化处理,增加发光二极管之出光效率。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1A系本发明第一实施例之封装基板的剖面图。
图1B系图1A之封装基板的俯视图。
图2A系本发明第二实施例之封装基板的剖面图。
图2B系图2A之封装基板的俯视图。
图3~图6系根据本发明实施的一种覆晶式发光二极管制造方法之部分步骤剖面图。
图中各标号表示:
100:封装基板
100’:封装基板
101:基板本体
102:第一表面
103:第二表面
104:第三表面
105A:第一导电层
105B:第二导电层
106:凹槽
107:胶材
201:发光二极管
202:生长基板
203:磊晶层
204:粗糙化表面
205A:第一电极
205B:第二电极
W1:与第二表面相邻的两个第一表面的宽度
W2:第二表面的宽度
d:第一表面与第二表面之高度差
θ:第二表面与第三表面相交角度
具体实施方式
为了能彻底地了解本发明,将在下列的描述中提出详尽的步骤及其组成,另外,众所周知的组成或步骤并未描述于细节中,以避免造成本发明不必要之限制。本发明的较佳实施例会详细描述如下,然而除了这些详细描述之外,本发明还可以广泛地施行在其它的实施例中,且本发明的范围不受限定,以专利权利要求范围为准。
为解决习知之封装基板于覆晶式发光二极管在共晶制程所面临到的缺点,本发明提出一适用于共晶接合制程之覆晶式发光二极管之封装基板及相关制造方法,同时解决后续生长基板移除制程中可能对芯片造成的损伤,下面实施例将配合图示说明本发明之封装基板及其应用方法。
请参考图1A~图1B。图1A系本发明第一实施例之封装基板的剖面图,图1B系图1A之封装基板的俯视图。封装基板100,包括:基板本体101,具有第一表面102,其上分布有至少一个单元,所述每个单元对应一个发光二极管芯粒,其具有彼此相互电隔离的第一区域和第二区域。如图1A所示,凹槽结构的截面形状为矩形,介于两个区域之间,其顶部开口宽度W1小于所述待封装芯粒的宽度。如图1B所示,凹槽结构的两侧位于基板本体的侧壁。
在本实施例中,凹槽结构的截面形状为矩形。第一导电层105A位于第一区域之上,第二导电层105B,位于第二区域之上。基板本体上包含第二表面103,其相对高度上位于第一表面之下且第二表面位于两个第一表面间;第三表面104分别与第一表面及第二表面间相连,其中,第一表面102,第二表面103,以及第三表面104形成凹槽106。
在本实施例中,第一表面102与第二表面103非共平面,其高度差d介于50微米至300微米之间,但不以此为限,此高度差可以有效解决习知之共晶制程因基板平整度不佳所造成共晶失效的问题。其中,凹槽106的顶部开口宽度W1介于100微米至1000微米之间。凹槽106的底部开口宽度W2等于凹槽106的顶部开口宽度W1。第二表面与第三表面相交角度θ为90度,但不以此为限。此外,基材本体101可为AlN基材,但亦不以此为限。
请参考图2A~图2B。图2A系本发明第二实施例之封装基板的剖面图,图2B系图2A之封装基板的俯视图。封装基板100’,包括:基板本体101,具有第一表面102,其上分布有至少一个单元,所述每个单元对应一个发光二极管芯粒,其具有彼此相互电隔离的第一区域和第二区域。如图2A所示,凹槽结构的截面形状为矩形,介于两个区域之间,其顶部开口宽度W1小于所述待封装芯粒的宽度。如图2B所示,凹槽结构的一侧开口位于基板本体的侧壁。
在本实施例中,凹槽结构的截面形状为倒梯形。第一导电层105A,位于第一区域之上,第二导电层105B,位于第二区域之上。基板本体上包含第二表面103,其相对高度上位于第一表面之下且第二表面位于两个第一表面间;第三表面104分别与第一表面及第二表面间相连,其中,第一表面102,第二表面103,以及第三表面104形成凹槽106。
在本实施例中,在本实施例中,第一表面102与第二表面103非共平面,其高度差d介于50微米至300微米之间,但不以此为限。其中,凹槽106的顶部开口宽度W1介于100微米至1000微米之间。凹槽106的底部开口宽度W2小于凹槽106的顶部开口宽度W1。第二表面与第三表面相交角度θ介于45度至90度之间,但不以此为限。
请参考图3~图6,系根据本发明实施的一种覆晶式发光二极管封装结构制造方法之部分步骤剖面图。在图3中,提供蓝宝石(Al2O3)基板本体100’,具有第一表面102,第二表面103以及第三表面104,所述第三表面与第一表面及第二表面相连;于基板本体第一表面上通过钻石刀形成一个开口,使得第二表面与第三表面构成凹槽结构;制作第一导电层,位于所述第一表面之上;分别在第一区域、第二区域之上制作第一导电层105A、第二导电层105B。提供发光二极管芯片201,包括:生长基板202、磊晶层203以及第一电极205A和第二电极205B,两个电极之间存有间隙;将第一导电层105A与第一电极205A,第二导电层105B与第二电极205B两两对位,以覆晶封装制程使得发光二极管固晶于所述封装基板100’上。
在图4中,将胶材107填充至第一电极与第二电极之间的间隙及凹槽结构,胶材可以选用环氧树脂或硅胶或前述环氧树脂、硅胶组合,本实施例优选硅胶。在图5中,使用激光剥离制程去除发光二极管芯片201之生长基板202,使发光二极管芯片201的磊晶层203表面裸露。藉由凹槽106的形成以及胶材107的填充固型,可有效避免发光二极管芯片201于激光剥离生长基板202时因应力的改变对磊晶层203所造成的损伤。在图6中,去除生长基板202后,利用化学蚀刻制程处理裸露的磊晶层203之出光面,使其形成粗糙化表面204,如此可进一步增加发光二极管之效率。
由上述本发明实施方式可知,应用本发明的发光二极管封装基板与封装结构,可解决习知覆晶制程因基板平整度不佳所造成之共晶失效的问题,进一步可藉由封装基板凹槽结构,在发光二极管覆晶固晶至封装基板后,利用胶材填入此凹槽,可解决后续激光剥离生长基板制程可能对芯片造成的损伤,最后藉由表面粗化制程的处理进而增加发光二极管之发光效率。
Claims (11)
1.一种发光二极管封装基板,包含:
基板本体,具有第一表面,其上分布有至少一个单元,所述一个单元对应一个待封装发光二极管芯粒,其具有彼此相互电隔离的第一区域和第二区域;
凹槽结构,介于两个区域之间,其顶部开口朝向待封装发光二极管芯粒,且开口宽度小于所述待封装发光二极管芯粒的宽度。
2.根据权利要求1所述的一种发光二极管封装基板,其特征在于:所述凹槽结构至少具有一侧开口位于基板本体的侧壁。
3.根据权利要求1所述的一种发光二极管封装基板,其特征在于:所述凹槽结构的截面形状为矩形或者倒梯形或者倒三角形或者弧形。
4.根据权利要求1所述的一种发光二极管封装基板,其特征在于:所述凹槽结构的高度差介于50微米至300微米之间。
5.根据权利要求1所述的一种发光二极管封装基板,其特征在于:所述凹槽结构的顶部开口宽度介于100微米至1000微米之间。
6.一种发光二极管封装结构,包含:
基板本体,具有第一表面,其上分布有至少一个单元,所述一个单元对应一个待封装发光二极管芯粒,其具有彼此相互电隔离的第一区域和第二区域;
凹槽结构,介于两个区域之间,其顶部开口宽度小于所述待封装发光二极管芯粒的宽度,且凹槽结构至少具有一侧位于基板本体的侧壁;
第一导电层,位于第一区域之上;
第二导电层,位于第二区域之上;
发光二极管芯片,具有第一电极和第二电极,两个电极之间存有间隙;
将第一导电层与第一电极,第二导电层与第二电极两两对位并固晶连接;
胶材,填入至第一电极与第二电极之间的间隙及凹槽结构。
7.一种发光二极管封装结构的制作方法,包含:
提供基板本体,具有第一表面,其上分布有至少一个单元,所述一个单元对应一个待封装发光二极管芯粒,其具有彼此相互电隔离的第一区域和第二区域;
在基板本体第一表面上形成开口,在两个区域之间形成凹槽结构,且顶部开口宽度小于所述待封装发光二极管芯粒的宽度,凹槽结构至少具有一侧位于基板本体的侧壁,制得封装基板;
在第一区域之上制作第一导电层;
在第二区域之上制作第二导电层;
提供发光二极管,具有生长基板、磊晶层、第一电极和第二电极,两个电极之间存有间隙;
将第一导电层与第一电极,第二导电层与第二电极两两对位,以覆晶封装制程使得发光二极管固晶于所述封装基板上;
将胶材填入至第一电极与第二电极之间的间隙及凹槽结构,如此构成发光二极管封装结构。
8.根据权利要求7所述的一种发光二极管封装结构的制作方法,其特征在于:所述胶材为环氧树脂或硅胶或前述环氧树脂、硅胶组合。
9.根据权利要求7所述的一种发光二极管封装结构的制作方法,其特征在于:利用胶材填充至第一电极与第二电极之间的间隙及凹槽结构后,还包含采用剥离制程,去除发光二极管芯片的生长基板,使其磊晶层表面裸露。
10.根据权利要求7所述的一种发光二极管封装结构的制作方法,其特征在于:所述凹槽结构的高度差介于50微米至300微米之间。
11.根据权利要求7所述的一种发光二极管封装结构的制作方法,其特征在于:所述凹槽结构的顶部开口宽度介于100微米至1000微米之间。
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