WO2018196630A1 - 传感器封装结构的制备方法和传感器封装结构 - Google Patents

传感器封装结构的制备方法和传感器封装结构 Download PDF

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Publication number
WO2018196630A1
WO2018196630A1 PCT/CN2018/082936 CN2018082936W WO2018196630A1 WO 2018196630 A1 WO2018196630 A1 WO 2018196630A1 CN 2018082936 W CN2018082936 W CN 2018082936W WO 2018196630 A1 WO2018196630 A1 WO 2018196630A1
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chip
ball
encapsulation layer
protection portion
package structure
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PCT/CN2018/082936
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English (en)
French (fr)
Inventor
李扬渊
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苏州迈瑞微电子有限公司
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Publication of WO2018196630A1 publication Critical patent/WO2018196630A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps

Definitions

  • Embodiments of the present invention relate to the field of sensor packaging technologies, and in particular, to a method for fabricating a sensor package structure and a sensor package structure.
  • the sensor package structure includes a chip, a protective layer, and a filling structure.
  • the chip is combined with the protective layer, and the functional circuit is disposed on one side of the chip near the protective layer, and the side of the chip away from the protective layer is connected to the substrate, and the pad is disposed on the substrate, and the pad is used to provide electrical connection between the chip and the external circuit.
  • the molding material surrounds the periphery of the substrate as a filling structure, and the substrate portion including the pad is exposed in the opening of the filling structure formed by the molding material to facilitate electrical coupling.
  • the existing sensor package structure uses an open molding method (open package) packaging scheme.
  • open package open molding method
  • the protective layer and the chip are combined, and a filling material is used to form a filling structure for packaging.
  • the packaging scheme of the open molding method is technically difficult and difficult in the packaging process.
  • the packaging material is prone to flash and covers the surface of the pad, and the formed sensor package structure is difficult to recover, and even is disposed of.
  • the invention provides a preparation method of a sensor package structure and a sensor package structure, so as to reduce the difficulty of the packaging technology and solve the problem of packaging failure caused by the plastic material overflow in the packaging process.
  • an embodiment of the present invention provides a method for fabricating a sensor package structure, the method comprising:
  • the first surface of the chip being formed with a functional circuit
  • the encapsulation layer and the ball which are away from the first surface of the protection portion are thinned to form a pad, and the pad formed is a partial region of the exposed ball.
  • an embodiment of the present invention further provides a sensor package structure, where the sensor package structure includes:
  • the first surface of the chip is formed with a functional circuit, and a ball that is electrically connected to the functional circuit is formed on the second surface opposite to the first surface;
  • the first surface of the protection portion is in contact with the first surface of the chip
  • An encapsulation layer is located above the first surface of the protection portion, and the encapsulation layer covers the chip and the ball;
  • the surface of the encapsulation layer of the encapsulation layer away from the first surface of the protection portion is provided with a pad, and the pad is a cross section formed by the ball after the encapsulation layer is thinned, and the encapsulation layer exposes the pad.
  • a ball is formed on the second surface of the chip, and an encapsulation layer is formed on the first surface of the protection portion, and the encapsulation layer covers the chip, and also covers the ball, that is, the plastic package buried in the encapsulation layer after encapsulation In the material.
  • the formed encapsulation layer covers the chip, which reduces the difficulty.
  • the pad is formed by thinning the encapsulation layer and the ball, and the plastic material does not affect the formed pad, which solves the problem that the plastic material overflow causes the product to be scrapped, and improves the yield of the package.
  • FIG. 1A is a schematic flow chart of a method for preparing a sensor package structure according to an embodiment of the present invention
  • 1B-1F are schematic cross-sectional views of a sensor packaging method corresponding to each step of a method for fabricating a sensor package structure according to an embodiment of the present invention
  • FIG. 2A is a schematic flow chart of a method for preparing a sensor package structure according to an embodiment of the present invention
  • 2B-2E are schematic cross-sectional views showing a sensor packaging method corresponding to each step of a method for fabricating a sensor package structure according to an embodiment of the present invention
  • 3A is a schematic flow chart of a method for preparing a sensor package structure according to an embodiment of the present invention
  • 3B-3E are schematic cross-sectional views of a sensor packaging method corresponding to each step of a method for fabricating a sensor package structure according to an embodiment of the present invention
  • FIG. 3F is a schematic top view of a sensor package structure according to an embodiment of the invention.
  • FIGS. 1A is a schematic flow chart of a method for fabricating a sensor package structure according to an embodiment of the present invention.
  • FIGS. 1B-1F are cross-sectional views showing corresponding structures of respective steps of a method for fabricating a sensor package structure according to an embodiment of the present invention. The present embodiment is applicable to the case of forming a sensor package structure.
  • a method for fabricating a sensor package structure according to an embodiment of the present invention includes:
  • Step 110 Providing a chip, wherein a first surface of the chip is formed with a functional circuit.
  • a chip 11 is first provided.
  • the chip 11 includes opposing first and second surfaces 111, 112, and the first surface 111 of the chip 11 is formed with a functional circuit.
  • a chip wafer is provided, and the chip wafer may be a silicon wafer.
  • a functional circuit is prepared on one surface of the chip wafer, and a metal layer is formed on the chip wafer, and then the metal layer is etched to form a functional circuit, thereby forming a chip. 11.
  • Step 120 Form a ball on the second surface of the chip opposite to the first surface, and the ball is electrically connected to the functional circuit.
  • a ball 113 is formed on the second surface 112 of the chip 11 opposite the first surface 111.
  • the ball 113 is electrically connected to a functional circuit on the first surface 111 of the chip 11, and the functional circuit can pass through the second surface 112.
  • the ball placement 113 on the upper side is convenient to be connected to an external circuit.
  • Step 130 bonding the first surface of the chip and the first surface of the protection portion.
  • the first surface 111 of the chip 11 and the first surface 121 of the protection portion 12 are attached by a bonding glue 13.
  • the chip 11 and the protection portion 12 may be attached in other fixed manners, and only the protection portion 12 is bonded to the first surface 111 on which the functional circuit is provided on the chip 11.
  • the protection portion 12 is used to protect the functional circuit of the first surface 111 of the chip 11, providing reliable protection for the functional circuit.
  • the second surface of the protection portion 12 (the other side surface opposite to the first surface 121 of the protection portion) may serve as a sensing functional surface.
  • the molding material generally covers the chip 11 and is connected to the protection portion 12, and the chip 11 and the protection portion 12 are combined by the bonding adhesive 13, thereby preventing the chip 11 and the protection portion during the molding process. 12 shifts ensure reliable packaging and improve package yield.
  • the protection portion 12 may include a dielectric layer, and the material of the dielectric layer may be sapphire, ceramic, crystal or glass.
  • the dielectric layer may have a thickness of 100 um to 200 um.
  • the thickness of the dielectric layer may be 100 um
  • the thickness of the dielectric layer may be 200 um.
  • Step 140 Form an encapsulation layer over the first surface of the protection portion, and the encapsulation layer covers the chip.
  • an encapsulation layer is formed over the first surface of the protection portion 12, wherein the first surface of the protection portion 12 is above the side of the first surface of the protection portion 12 near the chip 11.
  • the formed encapsulation layer 14 covers the chip 11, and at the same time, the formed encapsulation layer 14 also covers the ball 113, and the ball 113 is buried in the encapsulation layer 14.
  • a plastic sealing mold can be used to form a plastic sealing structure on the bonded chip 11 and the protective portion 12, which is the encapsulating layer 14.
  • Step 150 Thinning the encapsulation layer and the implant ball away from the first surface of the protection portion to form a pad, and the formed pad is a partial region of the exposed ball.
  • the encapsulation layer 14 and the ball 113 away from the first surface of the protection portion 12 are thinned, for example, the encapsulation layer 14 and the ball 113 are thinned by a cutter, and the ball 113 is leaked.
  • the pad 15 is formed in a cross section.
  • the functional circuit can be connected to an external circuit through the pad 15.
  • the thickness d1 of the encapsulation layer 14 is 200 um to 600 um in the direction perpendicular to the first surface of the chip 11.
  • the height of the ball 113 is greater than or equal to 20 um in a direction perpendicular to the first surface of the chip 11. Since the pad 15 is formed by thinning the encapsulation layer 14 and the ball 113, that is, the cross section of the leaked ball 113 forms a pad, and the height of the ball 113 is greater than or equal to 20 um, facilitating the formation of the pad 15, if the ball 113 The height of the ball is less than 20um, and the pad 15 cannot be effectively formed. Generally, the height of the ball 113 is substantially equal to the radius of the ball 113. If the height of the ball 113 is too small, the formed ball 113 has a small cross-sectional area and increased resistance. Large, not conducive to the transmission of signals.
  • the encapsulation layer and the protective layer form a receiving space with one side open, and the chip is located in the receiving space.
  • the chip is plastically sealed.
  • An opening is formed on the formed encapsulation layer, the opening exposes the second surface of the chip, and all the corresponding pads are also exposed, and only a part of the chip is plastically sealed, and the molding process is difficult to control, and the opening package is difficult.
  • the plastic sealing process if there is a plastic material overflow, the pad on the chip will be covered, which is difficult to recover, and the product is scrapped.
  • the formed encapsulation layer 14 covers the chip 11 during the molding process, and the opening on the encapsulation layer 14 is not required to be formed in the molding process, which reduces the difficulty.
  • the pad 15 is formed by thinning the encapsulation layer 14 and the ball 113, and the plastic material overflow does not affect the formed pad 15, which solves the problem that the plastic material overflow causes the product to be scrapped, and improves the package. Yield.
  • the formed sensor package structure can maintain the thickness of the chip after the package reaches the thickness of the chip formed by the existing open molding process package, that is, the effect of the open molding process package.
  • FIG. 2A is a schematic flow chart of a method for fabricating a sensor package structure according to an embodiment of the present invention
  • FIG. 2B is a cross-sectional view of a sensor package method corresponding to each step of a method for fabricating a sensor package structure according to an embodiment of the present invention.
  • the method includes:
  • Step 210 Providing a chip, wherein a first surface of the chip is formed with a functional circuit, and a through hole is formed on the chip.
  • a chip 11 is provided.
  • the first surface 111 of the chip 11 is formed with a functional circuit.
  • the chip 11 is formed with a through hole 114.
  • the through hole 114 formed in the chip 11 is distributed in the chip 11.
  • a through silicon via may be used.
  • the through holes 114 in the chip 11 are formed in a manner.
  • Step 220 forming a ball placement on a second surface of the chip opposite to each of the through holes in a direction perpendicular to the first surface of the chip, wherein the ball is electrically connected to the functional circuit through the through hole.
  • a ball 113 is formed on the second surface 112 of the chip 11 in a direction perpendicular to the first surface 111 of the chip 11, and the formed ball 113 is formed directly above the through hole 114, so that the ball 113 and the ball are passed.
  • the short path of the holes 114 is connected, which facilitates the transmission of signals and saves material.
  • Step 230 bonding the first surface of the chip and the first surface of the protection portion.
  • the first surface 111 of the chip 11 and the first surface of the protection portion 12 are attached.
  • the protection portion 12 is used to protect the functional circuit of the first surface 111 of the chip 11, providing reliable protection for the functional circuit.
  • Step 240 forming an encapsulation layer over the first surface of the protection portion, and the encapsulation layer covers the chip.
  • an encapsulation layer 14 is formed over the first surface of the protection portion, the encapsulation layer covers the chip 11, and the ball is buried in the encapsulation layer 14.
  • Step 250 cutting and/or sanding the encapsulation layer and the implant ball exposes a portion of the implant ball to form a pad.
  • a tool cutting encapsulation layer 14 and a ball 113 are provided to expose the cross-section of the ball 113 to form a pad 15, the resulting structure being as shown in Figure 2E.
  • the encapsulation layer 14 and the ball 113 may also be sanded to expose the cross-section of the ball 113 to form the pad 15.
  • the encapsulation layer 14 and the ball 113 may also be thinned by a combination of cutting and sanding to expose the cross-section of the ball 113 to form the pad 15.
  • FIG. 3A is a schematic flow chart of a method for fabricating a sensor package structure according to an embodiment of the present invention
  • FIG. 3B is a cross-sectional view of a sensor package method corresponding to each step of a method for fabricating a sensor package structure according to an embodiment of the present invention.
  • the method includes:
  • Step 310 Providing a chip 11, the first surface of the chip 11 is formed with a functional circuit, the chip 11 is provided with a trench 115, and a through hole 114 is formed in the trench 115.
  • the through holes in the chip 11 are concentrated in the trenches 115, and the through holes 114 are formed in the trenches 115, which is relatively simple, and the efficiency of forming the via holes 114 can be improved.
  • Step 320 forming a ball 113 on the second surface of the chip 11 opposite to the first surface, and the ball 113 is electrically connected to a functional circuit disposed on the first surface of the chip 11.
  • a ball 113 is formed on a second surface of the chip opposite to the first surface, and the ball 113 is electrically connected to a functional circuit of the first surface of the chip 11 through a through hole provided in the groove 115.
  • Step 330 bonding the first surface of the chip 11 and the first surface of the protection portion 12.
  • the protection portion 12 is used to protect the functional circuit of the first surface 111 of the chip 11, providing reliable protection for the functional circuit.
  • Step 340 forming an encapsulation layer 14 over the first surface of the protection portion 12, and the encapsulation layer 14 covers the chip 11.
  • Step 350 cutting and/or grinding the encapsulation layer 14 and the ball 113 to expose a portion of the ball 113 to form the pad 15.
  • the encapsulation layer 14 and the ball 113 are cut and/or polished to expose the cross-section of the ball 113 to form the pad 15.
  • FIG. 3F is a schematic top view of a sensor package structure according to an embodiment of the present invention
  • FIG. 3E is a schematic cross-sectional view corresponding to the top view.
  • Two grooves 115 are exemplarily provided in FIG. 3F.
  • the through holes 114 are concentrated in the grooves 115.
  • the number of the grooves 115 is equal to or greater than 1. The number and position of the grooves 115 can be adjusted according to the structure of the sensor.
  • the embodiment of the present invention further provides a sensor package structure, which can be prepared by using the method for preparing a sensor package structure provided by any embodiment of the present invention.
  • a sensor package structure which can be prepared by using the method for preparing a sensor package structure provided by any embodiment of the present invention.
  • FIG. 3E is a schematic cross-sectional view taken along line A-A of FIG. 3F.
  • the sensor package structure includes:
  • the first surface of the chip 11 is formed with a functional circuit, and a ball that is electrically connected to the functional circuit is formed on the second surface opposite to the first surface;
  • the first surface of the protection portion 12 is adhered to the first surface of the chip 11;
  • the first surface of the protection portion 12 and the first surface of the chip 11 may be bonded by a bonding paste for protecting the functional circuit on the first surface of the chip 11.
  • the encapsulation layer 14 is located above the first surface of the protection portion 12, and the encapsulation layer 14 covers the chip 11 and the ball.
  • the encapsulation layer 14 and the protection portion 12 are connected, and the encapsulation layer 14 and the protection portion 12 enclose the chip 11.
  • the surface of the encapsulation layer 14 away from the first surface of the protection portion 12 is provided with a pad which is a cross section formed by the thinning of the encapsulation layer 14 and the pad 15 is electrically connected to the functional circuit on the first surface of the chip 11, the encapsulation layer 14 exposes the pad 15.
  • the package layer 14 has a maximum thickness of 250 um and a pad height of 50 um in a direction perpendicular to the first surface of the chip 11.
  • the sensor package structure shown in FIG. 2E and the sensor package structure shown in FIG. 3E are two different sensor package structures provided by the implementation of the present invention. For details, refer to the method embodiment part for the two structures. description.
  • the sensor package structure provided by the embodiment of the invention may be a fingerprint sensor package structure.
  • the method for preparing a sensor package structure and the sensor package structure provided by the embodiments of the present invention. It can achieve the effect of the open molding process packaging, and reduce the process difficulty, providing production efficiency.
  • the plastic material flash does not affect the formed pad 15, which solves the problem that the plastic material overflow causes the product to be scrapped, and improves the package yield.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

一种传感器封装结构的制备方法和传感器封装结构，其中，传感器封装结构的制备方法包括：提供芯片（11），芯片（11）的第一表面（111）形成有功能电路；在芯片（11）与第一表面（111）相对的第二表面（112）上形成植球（113），植球（113）与功能电路电连接；将芯片（11）的第一表面（111）和保护部（12）的第一表面（121）贴合；在保护部（12）的第一表面（121）上方形成封装层（14），封装层（14）包覆芯片（11）；对远离保护部第一表面（121）的封装层（14）和植球（113）进行减薄形成焊盘（15），形成的焊盘（15）为暴露出的植球（113）的部分区域。本技术方案可以降低工艺难度，解决因敞开式模塑法产生的溢料造成传感器封装结构报废的问题，提高传感器封装良率。

Description

传感器封装结构的制备方法和传感器封装结构
申请要求了申请日为2017年04月28日，申请号为201710293294.5，发明名称为“传感器封装结构的制备方法和传感器封装结构”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明实施例涉及传感器封装技术领域，尤其涉及一种传感器封装结构的制备方法和传感器封装结构。
背景技术
传感器封装结构包括芯片、保护层和填充结构。芯片与保护层结合，芯片靠近保护层的一面布置功能电路，芯片远离保护层的一面与基板连接，基板上设置焊盘，焊盘用于提供芯片与外部电路电联接。塑封材料作为填充结构包围在基板的外围，包含焊盘的基板部分暴露在塑封材料形成的填充结构的开口中，方便电联接。
现有传感器封装结构使用的是敞开式模塑法(开口封装)封装方案，在制作传感器封装结构时，将保护层和芯片结合后，采用塑封材料形成填充结构进行封装。敞开式模塑法的封装方案在封装过程存在技术难度，工艺困难。并且在封装过程中封装材料容易产生溢料而覆盖在焊盘表面，形成的传感器封装结构很难恢复，甚至作报废处理。
发明内容
本发明提供一种传感器封装结构的制备方法和传感器封装结构，以降低封装技术难度，解决封装过程中塑封材料溢料造成封装失败的问题。
第一方面，本发明实施例提供了一种感器封装结构的制备方法，该方法包括：
提供芯片，所述芯片的第一表面形成有功能电路；
在所述芯片与所述第一表面相对的第二表面上形成植球，所述植球与所述功能电路电连接；
将所述芯片的第一表面和保护部的第一表面贴合；
在所述保护部的第一表面上方形成封装层，所述封装层包覆所述芯片；
对远离所述保护部第一表面的封装层和所述植球进行减薄形成焊盘，形成的所述焊盘为暴露出的所述植球的部分区域。
第二方面，本发明实施例还提供了一种传感器封装结构，该传感器封装结构包括：
芯片，所述芯片的第一表面形成有功能电路，与第一表面相对设置的第二表面之上形成与功能电路电连接的植球；
保护部，所述保护部的第一表面与所述芯片的第一表面贴合；
封装层，所述封装层位于保护部的第一表面上方，所述封装层包覆所述芯片和植球；
所述封装层远离所述保护部第一表面的封装层的表面设置有焊盘，所述焊盘为所述封装层减薄后植球形成的截面，所述封装层暴露出所述焊盘。
本发明实施例提供的技术方案。先在芯片的第二表面上形成植球，在保护部的第一表面上方形成封装层，封装层包覆所述芯片，同时也包覆植球，即封装后植球埋没在封装层的塑封材料中。对远离保护部第一表面的封装层和植球进行减薄形成焊盘，形成的所述焊盘为暴露出的所述植球的部分区域，相当于减薄一部分封装层和植球，并露出植球的截面形成焊盘。在塑封过程中，形成的封装层包覆芯片，降低了难度。而且在后续工艺中通过减薄封装层和植球来形成焊盘，塑封材料溢料不会对形成的焊盘造成影响，解决了塑封材料溢料导致产品报废的问题，提高封装的良率。
附图说明
图1A是本发明实施例提供的一种传感器封装结构的制备方法的流程示意图；
图1B-图1F是本发明实施例提供的传感器封装结构的制备方法各步骤对应的传感器封装方法的剖面示意图；
图2A是本发明实施例提供的一种传感器封装结构的制备方法的流程示意图；
图2B-图2E是本发明实施例提供的传感器封装结构的制备方法各步骤对应的传感器封装方法的剖面示意图；
图3A是本发明实施例提供的一种传感器封装结构的制备方法的流程示意图；
图3B-图3E是本发明实施例提供的传感器封装结构的制备方法各步骤对应的传感器封装方法的剖面示意图；
图3F是本发明实施例提供的一种传感器封装结构的俯视示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释本发明，而非对本发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本发明相关的部分而非全部结构。
图1A是本发明实施例提供的一种传感器封装结构的制备方法的流程示意图，图1B-1F是本发明实施例提供的传感器封装结构的制备方法各步骤对应结构的剖面示意图。本实施例 可适用于形成传感器封装结构的情况，参见图1A-1F，本发明实施例提供的传感器封装结构的制备方法包括：
步骤110、提供芯片，芯片的第一表面形成有功能电路。
参见图1B，首先提供芯片11，芯片11包括相对的第一表面111和第二表面112，芯片11的第一表面111形成有功能电路。例如提供芯片晶元，芯片晶元可以是硅片，在芯片晶元的一侧表面上制备功能电路，可以通过在芯片晶元上沉积金属层，然后刻蚀金属层形成功能电路，进而形成芯片11。
步骤120、在芯片与第一表面相对的第二表面上形成植球，植球与功能电路电连接。
参见图1C，在芯片11与第一表面111相对的第二表面112上形成植球113，植球113与芯片11的第一表面111上的功能电路电连接，功能电路可通过第二表面112上的植球113方便与外部电路连接。
步骤130、将芯片的第一表面和保护部的第一表面贴合。
示例性的，参见图1D，通过连接胶13将芯片11的第一表面111和保护部12的第一表面121贴合。也可采用其他固定的方式将芯片11和保护部12贴合，只有保证保护部12贴合于芯片11上设置有功能电路的第一表面111即可。保护部12用于保护芯片11的第一表面111的功能电路，为功能电路提供可靠保护。保护部12的第二表面(与保护部的第一表面121相对的另一侧表面)可作为传感功能表面。另外，在对传感器进行塑封过程中，塑封材料一般包覆芯片11，并与保护部12连接，通过连接胶13将芯片11和保护部12结合，可防止在塑封过程中，芯片11和保护部12移位，保证可靠封装，提高封装良率。
其中，保护部12可包括介电层，介电层的材料可以是蓝宝石、陶瓷、水晶或玻璃。介电层的厚度可以为100um-200um，例如，当介电层的材料采用陶瓷时，介电层的厚度可为100um，介电层的材料采用玻璃时，介电层的厚度可为200um。
步骤140、在保护部的第一表面上方形成封装层，封装层包覆芯片。
参见图1E，在保护部12的第一表面上方形成封装层，其中，保护部12的第一表面的上方为保护部12第一表面靠近芯片11的一侧。形成的封装层14包覆芯片11，同时，形成的封装层14也包覆植球113，植球113埋没于封装层14内。在本发明实施例中，可使用塑封模具，在贴合后的芯片11和保护部12上形成塑封结构，该塑封结构即为封装层14。
步骤150、对远离保护部第一表面的封装层和植球进行减薄形成焊盘，形成的焊盘为暴露出的植球的部分区域。
参见图1F，在形成封装层14之后，对远离保护部12第一表面的封装层14和植球113 进行减薄，例如采用刀具对封装层14和植球113进行减薄，漏出植球113的截面而形成焊盘15。功能电路可以通过焊盘15连接外部电路。
继续参见图1E，在本发明实施例中，沿垂直芯片11第一表面的方向，封装层14的厚度d1为200um-600um。
在本发明实施例中，沿垂直于芯片11第一表面的方向，植球113的高度大于或等于20um。由于要减薄封装层14和植球113而形成焊盘15，即漏出的植球113的截面形成焊盘，植球113的高度要大于或者等于20um，方便形成焊盘15，如果植球113的高度小于20um，无法有效形成焊盘15，而且一般植球113的高度基本上等于植球113的半径，如果植球113的高度过小，形成的植球113的截面积较小，电阻增大，不利于信号的传输。
在现有技术中，在对传感器进行塑封封装过程中，封装层和保护层会形成一个一侧开口的收容空间，芯片位于收容空间内，一般在芯片上形成焊盘之后，对芯片进行塑封，形成的封装层上形成有开口，该开口暴露出芯片的第二表面，相应的所有焊盘也被暴露出来，只对芯片的部分区域进行塑封，塑封过程难以控制，开口封装比较困难。在塑封过程中，如果出现塑封材料溢料，将覆盖芯片上的焊盘，很难恢复，设置造成产品报废。而本发明实施例提供的技术方案，在塑封过程中，形成的封装层14包覆芯片11即可，不需要在塑封过程形成封装层14上的开口，降低了难度。而且在后续工艺中通过减薄封装层14和植球113来形成焊盘15，塑封材料溢料不会对形成的焊盘15造成影响，解决了塑封材料溢料导致产品报废的问题，提高封装的良率。形成的传感器封装结构，能够保持封装后芯片的厚度达到现有敞开式模塑法封装工艺封装形成的芯片厚度，即达到敞开式模塑法封装工艺封装的效果。
图2A是本发明实施例提供的另一种传感器封装结构的制备方法的流程示意图，图2B-图2E是本发明实施例提供的传感器封装结构的制备方法各步骤对应的传感器封装方法的剖面示意图。该方法包括：
步骤210、提供芯片，芯片的第一表面形成有功能电路，芯片上形成有通孔。
参见图2B，提供芯片11，芯片11的第一表面111形成有功能电路，芯片11内形成有通孔114，芯片11上形成的通孔114分布于芯片11内，例如，可以采用硅通孔方式形成芯片11内的通孔114。
步骤220、沿垂直于芯片第一表面的方向，在芯片的第二表面上与各通孔正对的位置形成植球，其中植球通过通孔与功能电路电连接。
继续参见图2B，沿垂直于芯片11第一表面111的方向，在芯片11的第二表面112上形成植球113，形成的植球113位于通孔114的正上方，这样植球113和通孔114连接的路 径较短，利于信号的传输，而且节省材料。
步骤230、将芯片的第一表面和保护部的第一表面贴合。
参见图2C，将芯片11的第一表面111和保护部12的第一表面贴合。保护部12用于保护芯片11的第一表面111的功能电路，为功能电路提供可靠保护。
步骤240、在保护部的第一表面上方形成封装层，封装层包覆芯片。
参见图2D，在保护部的第一表面的上方形成封装层14，封装层包覆芯片11，植球埋没于封装层14内。
步骤250、切割和/或打磨封装层和植球，暴露出植球的部分区域以形成焊盘。
参见图2D和图2E，例如提供刀具切割封装层14和植球113，暴露出植球113的截面形成焊盘15，形成的结构如图2E所示。也可打磨封装层14和植球113，暴露出植球113的截面形成焊盘15。也可通过切割和打磨结合的方式，对封装层14和植球113进行减薄，暴露出植球113的截面形成焊盘15。
图3A是本发明实施例提供的另一种传感器封装结构的制备方法的流程示意图，图3B-图3E是本发明实施例提供的传感器封装结构的制备方法各步骤对应的传感器封装方法的剖面示意图。该方法包括：
步骤310、提供芯片11，芯片11的第一表面形成有功能电路，芯片11上开设有沟槽115，沟槽115内形成有通孔114。
芯片11内的通孔集中于沟槽115内，在沟槽115内形成通孔114，相对简单，可以提高形成通孔114的效率。
步骤320、在芯片11与第一表面相对的第二表面上形成植球113，植球113与设置与芯片11第一表面的功能电路电连接。
参见图3B，在芯片与第一表面相对的第二表面上形成植球113，植球113通过设置于沟槽115内的通孔与芯片11第一表面的功能电路电连接。
步骤330、将芯片11的第一表面和保护部12的第一表面贴合。
参见图3D，将芯片11的第一表面和保护部12的第一表面贴合。保护部12用于保护芯片11的第一表面111的功能电路，为功能电路提供可靠保护。
步骤340、在保护部12的第一表面上方形成封装层14，封装层14包覆芯片11。
步骤350、切割和/或打磨封装层14和植球113，暴露出植球113的部分区域以形成焊盘15。
切割和/或打磨封装层14和植球113，暴露出植球113的截面形成焊盘15。
图3F是本发明实施例提供的一种传感器封装结构的俯视示意图，图3E是与该俯视示意图对应的剖面示意图。图3F中示例性地设置有两个沟槽115，通孔114集中在沟槽115内，沟槽115的数量大于等于1，沟槽115的数量和位置可以根据传感器的结构进行调整。
本发明实施例还提供了一种传感器封装结构，该传感器封装结构可使用本发明任意实施例提供的传感器封装结构的制备方法制备而成。示例性的，参见图1F、图2E、图3E和3F，其中，图3E为图3F中沿A-A方向的剖面示意图。该传感器封装结构包括：
芯片11，芯片11的第一表面形成有功能电路，与第一表面相对设置的第二表面之上形成与功能电路电连接的植球；
保护部12，保护部12的第一表面与芯片11的第一表面贴合；
例如，保护部12的第一表面和芯片11的第一表面可通过连接胶贴合，保护部12用于保护芯片11的第一表面上的功能电路。封装层14，封装层14位于保护部12的第一表面上方，封装层14包覆芯片11和植球。
保护部12的第一表面上方为保护部靠近芯片11的一侧，封装层14和保护部12连接，封装层14和保护部12包裹芯片11。
远离保护部12第一表面的封装层14的表面设置有焊盘，焊盘为封装层14减薄后植球形成的截面，焊盘15与芯片11的第一表面上的功能电路电连接，封装层14暴露出焊盘15。
沿垂直于芯片11第一表面的方向，封装层14的最大厚度为250um，焊盘的高度为50um。
需要说明的是，图2E所示的传感器封装结构和图3E所示的传感器封装结构，是本发明实施提供的两种不同的传感器封装结构，具体可参见上述方法实施例部分对两种结构的描述。
本发明实施例提供的传感器封装结构可以是指纹传感器封装结构。
本发明实施例提供的传感器封装结构的制备方法以及传感器封装结构。能达到敞开式模塑法封装工艺封装的效果，并且降低了工艺难度，提供了生产效率。通过减薄封装层14和植球113来形成焊盘15，塑封材料溢料不会对形成的焊盘15造成影响，解决了塑封材料溢料导致产品报废的问题，提高封装的良率。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (8)

  1. 一种传感器封装结构的制备方法，其特征在于，包括：
    提供芯片，所述芯片的第一表面形成有功能电路；
    在所述芯片与所述第一表面相对的第二表面上形成植球，所述植球与所述功能电路电连接；
    将所述芯片的第一表面和保护部的第一表面贴合；
    在所述保护部的第一表面上方形成封装层，所述封装层包覆所述芯片；
    对远离所述保护部第一表面的封装层和所述植球进行减薄形成焊盘，形成的所述焊盘为暴露出的所述植球的部分区域。
  2. 根据权利要求1所述的方法，其特征在于，所述芯片上形成有通孔；
    所述在所述芯片与所述第一表面相对的第二表面上形成植球包括：
    沿垂直于所述第一表面的方向，在所述芯片的第二表面上与各所述通孔正对的位置形成所述植球，其中所述植球通过所述通孔与所述功能电路电连接。
  3. 根据权利要求1所述的方法，其特征在于，所述芯片上开设有沟槽，所述沟槽内形成有通孔；
    所述第二表面上形成的植球通过所述通孔与所述功能电路电连接。
  4. 根据权利要求1所述的方法，其特征在于，沿垂直于所述第一表面的方向，所述植球的高度大于或等于20um。
  5. 根据权利要求1所述的方法，其特征在于，所述保护部包括介电层，所述介电层的材料包括蓝宝石、陶瓷、水晶或玻璃。
  6. 根据权利要求5，所述的方法，其特征在于，将所述芯片的第一表面和保护部的第一表面贴合，包括：
    将所述芯片的第一表面和保护部的第一表面通过连接胶贴合。
  7. 根据权利要求1所述的方法，其特征在于，所述对远离所述保护部第一表面的封装层和所述植球进行减薄形成焊盘包括：
    切割和/或打磨所述封装层和所述植球，暴露出所述植球的部分区域以形成所述焊盘。
  8. 一种传感器封装结构，其特征在于，包括：
    芯片，所述芯片的第一表面形成有功能电路，与第一表面相对设置的第二表面之上形成与功能电路电连接的植球；
    保护部，所述保护部的第一表面与所述芯片的第一表面贴合；
    封装层，所述封装层位于保护部的第一表面上方，所述封装层包覆所述芯片和植球；
    所述封装层远离所述保护部第一表面的封装层的表面设置有焊盘，所述焊盘为所述封装层减薄后植球形成的截面，所述封装层暴露出所述焊盘。
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