CN109309033B - 热处理装置、热处理方法以及存储介质 - Google Patents

热处理装置、热处理方法以及存储介质 Download PDF

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Publication number
CN109309033B
CN109309033B CN201810841102.4A CN201810841102A CN109309033B CN 109309033 B CN109309033 B CN 109309033B CN 201810841102 A CN201810841102 A CN 201810841102A CN 109309033 B CN109309033 B CN 109309033B
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China
Prior art keywords
heat treatment
substrate
flow rate
wafer
unit
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CN201810841102.4A
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Chinese (zh)
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CN109309033A (zh
Inventor
福留生将
森泰夫
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201810841102.4A 2017-07-27 2018-07-27 热处理装置、热处理方法以及存储介质 Active CN109309033B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-145702 2017-07-27
JP2017145702A JP6955928B2 (ja) 2017-07-27 2017-07-27 熱処理装置、熱処理方法及び記憶媒体

Publications (2)

Publication Number Publication Date
CN109309033A CN109309033A (zh) 2019-02-05
CN109309033B true CN109309033B (zh) 2024-03-26

Family

ID=65225954

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CN201810841102.4A Active CN109309033B (zh) 2017-07-27 2018-07-27 热处理装置、热处理方法以及存储介质

Country Status (3)

Country Link
JP (1) JP6955928B2 (ja)
KR (1) KR102502024B1 (ja)
CN (1) CN109309033B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110690134B (zh) * 2019-09-12 2022-07-01 长江存储科技有限责任公司 多站式沉积工艺的串气检测方法、设备及可读存储介质
CN113838767B (zh) * 2020-06-08 2023-12-12 长鑫存储技术有限公司 显影装置及显影方法
CN116313946B (zh) * 2023-05-24 2023-10-17 长鑫存储技术有限公司 温度调节系统及调节方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6473993B1 (en) * 1999-03-31 2002-11-05 Tokyo Electron Limited Thermal treatment method and apparatus
CN1531015A (zh) * 2002-02-18 2004-09-22 株式会社日立高新技术 晶片处理方法
JP2006086177A (ja) * 2004-09-14 2006-03-30 Sumco Corp 気相エピタキシャル成長装置および半導体ウェーハの製造方法
JP2006204997A (ja) * 2005-01-26 2006-08-10 Seiko Epson Corp 基板乾燥装置、およびこれを備えた基板処理システム、並びに電気光学装置の製造方法、電気光学装置、および電子機器
CN1837731A (zh) * 2005-03-25 2006-09-27 东京毅力科创株式会社 加热装置、涂布显影装置及加热方法
JP2008166447A (ja) * 2006-12-27 2008-07-17 Tokyo Seimitsu Co Ltd Ｃｍｐ装置のウェハ温度制御方法及びウェハ温度制御機構
JP2008218593A (ja) * 2007-03-02 2008-09-18 Tokyo Electron Ltd 基板処理装置
JP2010272873A (ja) * 2010-05-31 2010-12-02 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2011077143A (ja) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2011146542A (ja) * 2010-01-14 2011-07-28 Tokyo Electron Ltd 熱処理装置、熱処理方法及び記憶媒体
JP2012178480A (ja) * 2011-02-28 2012-09-13 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3910054B2 (ja) * 2001-12-10 2007-04-25 東京エレクトロン株式会社 基板処理装置
US7094994B2 (en) * 2003-03-11 2006-08-22 Sony Corporation Heat treatment apparatus and method of semiconductor wafer
JP4179276B2 (ja) * 2004-12-24 2008-11-12 セイコーエプソン株式会社 溶媒除去装置および溶媒除去方法
US20080099463A1 (en) 2006-09-29 2008-05-01 Tokyo Electron Limited Method and processing system for rapid hotplate cool down
JP6406192B2 (ja) 2014-12-10 2018-10-17 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
US10217652B2 (en) * 2014-12-10 2019-02-26 Tokyo Electron Limited Heat treatment apparatus, heat treatment method, and storage medium

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6473993B1 (en) * 1999-03-31 2002-11-05 Tokyo Electron Limited Thermal treatment method and apparatus
CN1531015A (zh) * 2002-02-18 2004-09-22 株式会社日立高新技术 晶片处理方法
JP2006086177A (ja) * 2004-09-14 2006-03-30 Sumco Corp 気相エピタキシャル成長装置および半導体ウェーハの製造方法
JP2006204997A (ja) * 2005-01-26 2006-08-10 Seiko Epson Corp 基板乾燥装置、およびこれを備えた基板処理システム、並びに電気光学装置の製造方法、電気光学装置、および電子機器
CN1837731A (zh) * 2005-03-25 2006-09-27 东京毅力科创株式会社 加热装置、涂布显影装置及加热方法
KR20060103217A (ko) * 2005-03-25 2006-09-28 동경 엘렉트론 주식회사 가열 장치, 도포, 현상 장치 및 가열 방법
JP2008166447A (ja) * 2006-12-27 2008-07-17 Tokyo Seimitsu Co Ltd Ｃｍｐ装置のウェハ温度制御方法及びウェハ温度制御機構
JP2008218593A (ja) * 2007-03-02 2008-09-18 Tokyo Electron Ltd 基板処理装置
JP2011077143A (ja) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2011146542A (ja) * 2010-01-14 2011-07-28 Tokyo Electron Ltd 熱処理装置、熱処理方法及び記憶媒体
JP2010272873A (ja) * 2010-05-31 2010-12-02 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2012178480A (ja) * 2011-02-28 2012-09-13 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
JP2019029450A (ja) 2019-02-21
JP6955928B2 (ja) 2021-10-27
KR102502024B1 (ko) 2023-02-21
KR20190013473A (ko) 2019-02-11
CN109309033A (zh) 2019-02-05

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