CN109309033B - 热处理装置、热处理方法以及存储介质 - Google Patents

热处理装置、热处理方法以及存储介质 Download PDF

Info

Publication number
CN109309033B
CN109309033B CN201810841102.4A CN201810841102A CN109309033B CN 109309033 B CN109309033 B CN 109309033B CN 201810841102 A CN201810841102 A CN 201810841102A CN 109309033 B CN109309033 B CN 109309033B
Authority
CN
China
Prior art keywords
heat treatment
substrate
flow rate
wafer
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810841102.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN109309033A (zh
Inventor
福留生将
森泰夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN109309033A publication Critical patent/CN109309033A/zh
Application granted granted Critical
Publication of CN109309033B publication Critical patent/CN109309033B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201810841102.4A 2017-07-27 2018-07-27 热处理装置、热处理方法以及存储介质 Active CN109309033B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-145702 2017-07-27
JP2017145702A JP6955928B2 (ja) 2017-07-27 2017-07-27 熱処理装置、熱処理方法及び記憶媒体

Publications (2)

Publication Number Publication Date
CN109309033A CN109309033A (zh) 2019-02-05
CN109309033B true CN109309033B (zh) 2024-03-26

Family

ID=65225954

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810841102.4A Active CN109309033B (zh) 2017-07-27 2018-07-27 热处理装置、热处理方法以及存储介质

Country Status (3)

Country Link
JP (1) JP6955928B2 (ja)
KR (1) KR102502024B1 (ja)
CN (1) CN109309033B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110690134B (zh) * 2019-09-12 2022-07-01 长江存储科技有限责任公司 多站式沉积工艺的串气检测方法、设备及可读存储介质
CN113838767B (zh) * 2020-06-08 2023-12-12 长鑫存储技术有限公司 显影装置及显影方法
CN116313946B (zh) * 2023-05-24 2023-10-17 长鑫存储技术有限公司 温度调节系统及调节方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6473993B1 (en) * 1999-03-31 2002-11-05 Tokyo Electron Limited Thermal treatment method and apparatus
CN1531015A (zh) * 2002-02-18 2004-09-22 株式会社日立高新技术 晶片处理方法
JP2006086177A (ja) * 2004-09-14 2006-03-30 Sumco Corp 気相エピタキシャル成長装置および半導体ウェーハの製造方法
JP2006204997A (ja) * 2005-01-26 2006-08-10 Seiko Epson Corp 基板乾燥装置、およびこれを備えた基板処理システム、並びに電気光学装置の製造方法、電気光学装置、および電子機器
CN1837731A (zh) * 2005-03-25 2006-09-27 东京毅力科创株式会社 加热装置、涂布显影装置及加热方法
JP2008166447A (ja) * 2006-12-27 2008-07-17 Tokyo Seimitsu Co Ltd Ｃｍｐ装置のウェハ温度制御方法及びウェハ温度制御機構
JP2008218593A (ja) * 2007-03-02 2008-09-18 Tokyo Electron Ltd 基板処理装置
JP2010272873A (ja) * 2010-05-31 2010-12-02 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2011077143A (ja) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2011146542A (ja) * 2010-01-14 2011-07-28 Tokyo Electron Ltd 熱処理装置、熱処理方法及び記憶媒体
JP2012178480A (ja) * 2011-02-28 2012-09-13 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3910054B2 (ja) * 2001-12-10 2007-04-25 東京エレクトロン株式会社 基板処理装置
US7094994B2 (en) * 2003-03-11 2006-08-22 Sony Corporation Heat treatment apparatus and method of semiconductor wafer
JP4179276B2 (ja) * 2004-12-24 2008-11-12 セイコーエプソン株式会社 溶媒除去装置および溶媒除去方法
US20080099463A1 (en) 2006-09-29 2008-05-01 Tokyo Electron Limited Method and processing system for rapid hotplate cool down
JP6406192B2 (ja) 2014-12-10 2018-10-17 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
US10217652B2 (en) * 2014-12-10 2019-02-26 Tokyo Electron Limited Heat treatment apparatus, heat treatment method, and storage medium

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6473993B1 (en) * 1999-03-31 2002-11-05 Tokyo Electron Limited Thermal treatment method and apparatus
CN1531015A (zh) * 2002-02-18 2004-09-22 株式会社日立高新技术 晶片处理方法
JP2006086177A (ja) * 2004-09-14 2006-03-30 Sumco Corp 気相エピタキシャル成長装置および半導体ウェーハの製造方法
JP2006204997A (ja) * 2005-01-26 2006-08-10 Seiko Epson Corp 基板乾燥装置、およびこれを備えた基板処理システム、並びに電気光学装置の製造方法、電気光学装置、および電子機器
CN1837731A (zh) * 2005-03-25 2006-09-27 东京毅力科创株式会社 加热装置、涂布显影装置及加热方法
KR20060103217A (ko) * 2005-03-25 2006-09-28 동경 엘렉트론 주식회사 가열 장치, 도포, 현상 장치 및 가열 방법
JP2008166447A (ja) * 2006-12-27 2008-07-17 Tokyo Seimitsu Co Ltd Ｃｍｐ装置のウェハ温度制御方法及びウェハ温度制御機構
JP2008218593A (ja) * 2007-03-02 2008-09-18 Tokyo Electron Ltd 基板処理装置
JP2011077143A (ja) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2011146542A (ja) * 2010-01-14 2011-07-28 Tokyo Electron Ltd 熱処理装置、熱処理方法及び記憶媒体
JP2010272873A (ja) * 2010-05-31 2010-12-02 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2012178480A (ja) * 2011-02-28 2012-09-13 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
KR20190013473A (ko) 2019-02-11
KR102502024B1 (ko) 2023-02-21
JP6955928B2 (ja) 2021-10-27
CN109309033A (zh) 2019-02-05
JP2019029450A (ja) 2019-02-21

Similar Documents

Publication Publication Date Title
CN109309033B (zh) 热处理装置、热处理方法以及存储介质
CN111554571B (zh) 基片处理装置和基片处理方法
JP5296022B2 (ja) 熱処理方法及びその熱処理方法を実行させるためのプログラムを記録した記録媒体並びに熱処理装置
TWI610387B (zh) 基板熱處理裝置、基板熱處理方法、記錄媒體及熱處理狀態檢測裝置
JP5174098B2 (ja) 熱処理方法及びその熱処理方法を実行させるためのプログラムを記録した記録媒体並びに熱処理装置
JP4319756B2 (ja) 処理装置
JP7565422B2 (ja) 熱処理装置及び処理方法
TW201937669A (zh) 熱處理裝置，熱板的冷卻方法及電腦可讀取的記錄媒體
JP4811860B2 (ja) 熱処理方法、そのプログラム及び熱処理装置
CN111063623B (zh) 基片处理装置、基片处理方法和存储介质
JP7003260B2 (ja) 基板処理装置、基板処理方法、及び記憶媒体
JP2003051439A (ja) 熱処理方法及び熱処理装置
JP2018107192A (ja) 基板処理装置及び基板処理方法
CN115985807A (zh) 基板处理装置
JP4024980B2 (ja) 加熱処理方法及び加熱処理装置
JP6937906B2 (ja) 基板処理装置
JP7308671B2 (ja) 基板熱処理装置、基板熱処理方法及び記憶媒体
KR20230034670A (ko) 기판 처리 장치 및 압력 측정 방법
JP3482353B2 (ja) 熱処理装置
JPH097913A (ja) 基板加熱装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant