CN109309033B - Heat treatment device, heat treatment method, and storage medium - Google Patents
Heat treatment device, heat treatment method, and storage medium Download PDFInfo
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- CN109309033B CN109309033B CN201810841102.4A CN201810841102A CN109309033B CN 109309033 B CN109309033 B CN 109309033B CN 201810841102 A CN201810841102 A CN 201810841102A CN 109309033 B CN109309033 B CN 109309033B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 205
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000012545 processing Methods 0.000 claims abstract description 79
- 230000008569 process Effects 0.000 claims abstract description 40
- 238000011282 treatment Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 72
- 239000007788 liquid Substances 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 103
- 238000012546 transfer Methods 0.000 description 31
- 238000000576 coating method Methods 0.000 description 29
- 239000011248 coating agent Substances 0.000 description 28
- 230000035945 sensitivity Effects 0.000 description 10
- 238000011161 development Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The present disclosure provides a heat treatment apparatus, a heat treatment method, and a storage medium effective for improving film thickness uniformity at the time of film formation. The heat treatment device (20) is provided with: a processing chamber (31) that accommodates a wafer (W) to be processed; a heat treatment unit (50) which is provided in the treatment chamber, supports and heats a wafer, and has a plurality of heat treatment regions (51) arranged at least in the circumferential direction of the wafer; a gas supply port (35) for introducing a gas into the processing chamber; an exhaust port (34) that exhausts gas from the process chamber; a plurality of flow rate sensors (71) arranged in the circumferential direction of the wafer supported by the heat treatment section, for detecting the flow rate of the gas flow; and a control unit (100) that controls the heat treatment unit to adjust the temperatures of the plurality of heat treatment regions on the basis of a temperature distribution corresponding to the flow rates of the air streams detected by the plurality of flow rate sensors.
Description
Technical Field
The present disclosure relates to a heat treatment apparatus, a heat treatment method, and a storage medium.
Background
Patent document 1 discloses a heat treatment apparatus including: a mounting portion provided in the processing container for mounting the substrate; a heating unit for heating the substrate placed on the placement unit; an air supply port provided along the outer periphery of the substrate, for supplying air into the processing container, and provided at a position laterally to the outer periphery of the substrate; and an exhaust port for exhausting gas from the processing container, the exhaust port being disposed above the central portion of the substrate.
Patent document 1: japanese patent laid-open publication 2016-115919
Disclosure of Invention
Problems to be solved by the invention
The present disclosure aims to provide a heat treatment apparatus, a heat treatment method, and a storage medium effective for improving film thickness uniformity at the time of film formation.
Solution for solving the problem
A heat treatment apparatus according to an aspect of the present disclosure includes: a processing chamber that accommodates a substrate to be processed; a heat treatment section provided in the treatment chamber for supporting a substrate and heating or cooling the substrate, the heat treatment section having a plurality of heat treatment regions arranged in a circumferential direction of the substrate; a gas supply port for introducing a gas into the processing chamber; an exhaust port that exhausts gas from the process chamber; a plurality of flow rate sensors arranged in a circumferential direction of the substrate supported by the heat treatment section, the flow rate sensors being configured to detect a flow rate of the gas flow; and a control section that controls the heat treatment section based on a temperature distribution corresponding to the flow rates of the air streams detected by the plurality of flow rate sensors to adjust the temperatures of the plurality of heat treatment regions.
In the processing chamber, there is a difference in the degree of heat treatment between a portion where the flow rate of the gas flow is high and a portion where the flow rate is low, and therefore, there is a case where uniformity of the film thickness after the heat treatment is lowered. Therefore, it is desirable to improve the uniformity of the flow rate of the gas flow, but the gas flow distribution is also difficult to control due to the influence of various conditions outside the process chamber. In contrast, in the present heat treatment apparatus, instead of controlling the flow rate distribution, the temperature of the plurality of heat treatment regions is adjusted based on the temperature distribution corresponding to the flow rate of the gas flow, thereby suppressing the decrease in the uniformity of the film thickness due to the flow rate distribution of the gas flow. Since the temperature distribution can be easily controlled as compared with the flow velocity distribution of the gas flow, if the temperature of the plurality of heat treatment regions is adjusted based on the temperature distribution corresponding to the flow velocity of the gas flow, the decrease in the uniformity of the film thickness due to the flow velocity distribution of the gas flow can be easily suppressed. Further, since the flow velocity distribution of the air flow is detected in real time by the plurality of flow velocity sensors and the temperature distribution can be adjusted in accordance with the flow velocity distribution, even when the flow velocity of the air flow changes with time due to external factors, the temperature distribution can be appropriately adjusted in response to the flow velocity distribution, and the influence of the flow velocity change can be suppressed. Further, the plurality of heat treatment regions and the plurality of flow rate sensors are each configured to be arranged in the circumferential direction of the substrate. This configuration is suitable for suppressing the influence of the flow velocity distribution in the circumferential direction of the substrate. The difference in flow velocity of the air flow tends to occur between different positions in the circumferential direction of the substrate. Therefore, according to the structure suitable for suppressing the influence of the flow velocity distribution in the circumferential direction of the substrate, the influence of the flow velocity distribution can be suppressed more reliably. Thus, the present heat treatment apparatus is effective for improving film thickness uniformity at the time of film formation.
The substrate to be processed may be a substrate coated with a processing liquid, and the control unit may be configured to change a relationship between a flow rate and a temperature distribution of the gas flow detected by the plurality of flow rate sensors according to the type of the processing liquid. In this case, by appropriately setting the relationship between the flow velocity distribution and the temperature distribution of the gas flow according to the type of the processing liquid, it is possible to more reliably suppress the decrease in the uniformity of the film thickness due to the flow velocity distribution of the gas flow.
The plurality of flow rate sensors may be arranged so as to correspond to the plurality of heat treatment regions in the circumferential direction of the substrate. In this case, since the flow rate of the air flow in each heat treatment region is directly derived, the temperature set values of the plurality of heat treatment regions can be easily derived.
The plurality of flow rate sensors may be provided outside the substrate supported by the heat treatment section. In this case, the flow rate of the air flow can be detected without being disturbed by the flow rate sensor.
The inner surface of the processing chamber may include an upper surface facing the surface of the substrate supported by the heat treatment section and a peripheral surface surrounding the substrate; the exhaust port is arranged at the central part of the upper surface; the air supply port is provided so as to surround the substrate along the peripheral surface. In this case, since the difference in flow velocity of the air flow tends to be more remarkable between the portions at different positions in the circumferential direction of the substrate, the arrangement of the plurality of heat treatment regions and the plurality of flow velocity sensors in the circumferential direction of the substrate more effectively functions.
Other aspects of the present disclosure relate to a heat treatment method comprising: carrying a substrate to be processed into a processing chamber; placing a substrate on a heat treatment section in a treatment chamber; the heat treatment section is controlled to heat or cool the substrate based on a temperature distribution corresponding to flow rates of air flows at a plurality of locations arranged in the circumferential direction of the substrate.
The substrate to be processed may be a substrate coated with a processing liquid, and the relationship between the flow rate and the temperature distribution of the gas flow at a plurality of locations may be changed according to the type of the processing liquid.
A computer-readable storage medium according to another aspect of the present disclosure stores a program for causing an apparatus to execute the heat treatment method.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, a heat treatment apparatus, a heat treatment method, and a storage medium effective for improving film thickness uniformity at the time of film formation can be provided.
Drawings
Fig. 1 is a perspective view showing a schematic configuration of a substrate liquid processing system.
Fig. 2 is a cross-sectional view showing a schematic structure of the coating and developing apparatus.
Fig. 3 is a schematic diagram showing a schematic structure of the heat treatment unit.
Fig. 4 is a schematic view illustrating a configuration of a heat treatment region and a flow rate sensor.
Fig. 5 is a table showing the stored contents of the coefficient database.
Fig. 6 is a block diagram illustrating a hardware configuration of the control section.
Fig. 7 is a flowchart showing a heat treatment process.
Fig. 8 is a schematic view showing a state of a wafer in heat treatment execution.
Fig. 9 is a schematic diagram showing a modification of the heat treatment unit.
Fig. 10 is a schematic diagram showing another modification of the heat treatment unit.
Fig. 11 is a schematic diagram showing still another modification of the heat treatment unit.
Description of the reference numerals
20: a heat treatment device; 50: a heat treatment section; 71. 71A, 71B, 71C, 71D: a flow rate sensor; 31: a processing chamber; 35: an air supply port; 34: an exhaust port; 32: an upper surface; 33: a peripheral surface; 51. 51A, 51B, 51C, 51D, 51E, 51F, 51H, 51I: a heat treatment region; 100: and a control unit.
Detailed Description
[ substrate processing System ]
The substrate processing system 1 is a system that performs formation of a photosensitive film on a substrate, exposure of the photosensitive film, and development of the photosensitive film. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive coating is, for example, a resist film. The substrate processing system 1 includes a coating and developing apparatus 2 and an exposure apparatus 3. The exposure device 3 performs exposure processing on a resist film (photosensitive coating film) formed on a wafer W (substrate). Specifically, the exposure target portion of the resist film is irradiated with energy rays by a method such as liquid immersion exposure. The coating and developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W (substrate) before the exposure process by the exposure apparatus 3, and performs a development process of the resist film after the exposure process.
[ substrate processing apparatus ]
Hereinafter, the configuration of the coating and developing apparatus 2 will be described as an example of the substrate processing apparatus. As shown in fig. 1 and 2, the coating and developing apparatus 2 includes a carrier module 4, a process module 5, an interface module 6, and a control unit 100.
The carrier module 4 is used to introduce the wafer W into the coating and developing apparatus 2 and to withdraw the wafer W from the coating and developing apparatus 2. For example, the carrier module 4 can support a plurality of carriers C for the wafer W, and incorporates the transfer arm A1. The carrier C accommodates a plurality of round wafers W, for example. The transfer arm A1 takes out the wafer W from the carrier C and transfers it to the processing module 5, and receives the wafer W from the processing module 5 and returns it to the carrier C.
The processing module 5 has a plurality of processing components 11, 12, 13, 14. The processing units 11, 12, 13 have built-in coating units U1, heat treatment units U2, and a transfer arm A3 for transferring the wafer W to these units.
The processing unit 11 forms a lower layer film on the surface of the wafer W using the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing unit 11 applies a processing liquid for forming a lower layer film onto the wafer W. The heat treatment unit U2 of the treatment module 11 performs various heat treatments accompanied with formation of the underlying film.
The processing module 12 forms a resist film on the underlying film using the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 12 applies a processing liquid for forming a resist film onto the underlying film. The heat treatment unit U2 of the processing unit 12 performs various heat treatments accompanied with formation of a resist film.
The processing module 13 forms an upper layer film on the resist film using the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing unit 13 coats the resist film with the liquid for forming the upper layer film. The heat treatment unit U2 of the treatment module 13 performs various heat treatments accompanied with formation of an upper layer film.
The process module 14 houses a developing unit U3, a heat treatment unit U4, and a transfer arm A3 for transferring the wafer W to these units.
The process unit 14 performs a development process on the exposed resist film using the development unit U3 and the heat treatment unit U4. The developing unit U3 applies a developing solution to the surface of the wafer W after exposure, and then washes the surface of the wafer W with a rinse solution to develop the resist film. The heat treatment unit U4 performs various heat treatments accompanied with the development treatment. Specific examples of the heat treatment include a heat treatment before development (PEB: post Exposure Bake (Post baking after exposure)), a heat treatment after development (PB: post bak), and the like.
A rack unit U10 is provided on the carrier module 4 side in the process module 5. The canopy frame unit U10 is divided into a plurality of units arranged in the up-down direction. A lifting arm A7 is provided near the canopy frame unit U10. The lifting arm A7 lifts and lowers the wafer W between the units of the rack unit U10.
A trellis unit U11 is provided on the interface module 6 side in the processing module 5. The canopy frame unit U11 is divided into a plurality of units arranged in the up-down direction.
The interface module 6 transfers the wafer W to and from the exposure apparatus 3. For example, the interface module 6 has a transfer arm A8 built therein and is connected to the exposure device 3. The transfer arm A8 transfers the wafer W placed in the rack unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns the wafer W to the rack unit U11.
The control section 100 controls the coating and developing apparatus 2 to perform a coating and developing process in accordance with, for example, the following procedure. First, the control unit 100 controls the transfer arm A1 to transfer the wafer W in the carrier C to the rack unit U10, and controls the lift arm A7 to dispose the wafer W to the unit for the processing module 11.
Next, the control unit 100 controls the transfer arm A3 to transfer the wafer W of the rack unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing unit 11, and controls the coating unit U1 and the heat treatment unit U2 to form a lower layer film on the surface of the wafer W. Thereafter, the control unit 100 controls the transfer arm A3 to return the wafer W on which the lower film is formed to the rack unit U10, and controls the lift arm A7 to dispose the wafer W to the unit for the processing module 12.
Next, the control unit 100 controls the transfer arm A3 to transfer the wafer W of the rack unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing unit 12, and controls the coating unit U1 and the heat treatment unit U2 to form a resist film on the lower film of the wafer W. Thereafter, the control unit 100 controls the transfer arm A3 to return the wafer W to the rack unit U10, and controls the lift arm A7 to dispose the wafer W to the unit for the processing unit 13.
Next, the control unit 100 controls the transfer arm A3 to transfer the wafer W of the rack unit U10 to each unit in the processing module 13, and controls the coating unit U1 and the heat treatment unit U2 to form an upper layer film on the resist film of the wafer W. Thereafter, the control unit 100 controls the transfer arm A3 to transfer the wafer W to the rack unit U11.
Then, the control unit 100 controls the transfer arm A8 to send out the wafer W of the rack unit U11 to the exposure apparatus 3. Thereafter, the control unit 100 controls the transfer arm A8 to receive the wafer W subjected to the exposure process from the exposure apparatus 3, and to dispose the wafer W to the processing unit 14 in the rack unit U11.
Next, the control unit 100 controls the transfer arm A3 to transfer the wafer W of the rack unit U11 to each unit in the processing unit 14, and controls the developing unit U3 and the heat treatment unit U4 to perform development processing on the resist film of the wafer W. Then, the control unit 100 controls the transfer arm A3 to return the wafer W to the rack unit U10, and controls the lift arm A7 and the transfer arm A1 to return the wafer W to the carrier C. Through the above, the coating and developing treatment is completed.
The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating and developing apparatus 2 illustrated above. The substrate processing apparatus may have any configuration if it includes the heat treatment unit U2 and the control unit 100 capable of controlling the heat treatment unit.
[ Heat treatment device ]
Next, as an example of the heat treatment apparatus, the structure of the heat treatment apparatus 20 included in the coating and developing apparatus 2 will be described. As shown in fig. 3, the heat treatment apparatus 20 includes a control unit 100 and a heat treatment unit U2 of the treatment module 11. The heat treatment apparatus 20 is an apparatus for heat-treating the wafer W coated with the treatment liquid for forming the underlayer film. The underlayer film is, for example, a so-called hard mask such as a spin-on carbon (SOC) film.
The heat treatment unit U2 includes a chamber 30, a heat treatment section 50, a substrate lifting section 60, and a plurality of flow rate sensors 71. The chamber 30 includes a process chamber 31 for accommodating a wafer W to be processed (wafer W coated with a process liquid for forming a lower layer), an air supply port 35 for introducing air into the process chamber 31, and an air exhaust port 34 for exhausting air from the process chamber 31. The heat treatment section 50 is provided in the process chamber 31, and is configured to support and heat the wafer W. The substrate lifting/lowering unit 60 lifts and lowers the wafer W on the heat treatment unit 50. The plurality of flow rate sensors 71 are arranged in a circumferential direction of the wafer W supported by the heat treatment section 50, and detect a flow rate of the gas flow flowing through the process chamber 31. Detecting the flow rate of the gas flow from the outside of the processing chamber 31 to the gas supply port 35, measuring the flow rate of the gas flow from the gas supply port 35 to the gas exhaust port 34, and detecting the flow rate of the gas flow from the gas exhaust port 34 to the outside of the processing chamber 31 are equivalent to detecting the flow rate of the gas flow flowing in the processing chamber 31.
The inner surface of the processing chamber 31 may include an upper surface 32 facing the surface Wa of the wafer W supported by the heat treatment section 50 and a peripheral surface 33 surrounding the wafer W, the exhaust port 34 may be provided in a central portion of the upper surface 32, and the air supply port 35 may be provided so as to surround the wafer W along the peripheral surface 33. The case where the air supply ports 35 are provided so as to surround the wafer W includes a case where one air supply port 35 extends over a range exceeding 180 ° around the center of the wafer W, and also includes a case where a plurality of air supply ports 35 are distributed over a range exceeding 180 ° around the center of the wafer W.
The structures of the chamber 30, the heat treatment section 50, the substrate elevating section 60, and the flow rate sensor 71 will be described in more detail below.
The chamber 30 includes a base 41, an upper cover 42, an annular shutter 43, an opening/closing drive unit 44, and a substrate lifting unit 60.
The susceptor 41 forms the bottom of the chamber 30 and supports the heat treatment part 50.
The upper cover 42 is provided above the base 41, and forms the processing chamber 31 with the base 41. The lower surface of the upper cover 42 constitutes the upper surface 32 of the process chamber 31.
An exhaust passage 45 is formed in the center of the upper cover 42. The lower end of the exhaust flow path 45 opens at the center of the upper surface 32. The opening of the exhaust flow path 45 at the center portion of the upper surface 32 corresponds to the exhaust port 34. The upper end of the exhaust passage 45 is connected to an exhaust pipe 47 outside the chamber 30.
The annular shutter 43 is an annular body that surrounds a space between the base 41 and the upper cover 42 (i.e., the process chamber 31). The annular shutter 43 is configured to switch between a state in which a peripheral edge portion of the base 41 and a peripheral edge portion of the upper cover 42 are closed (hereinafter referred to as a "closed state") and a state in which a peripheral edge portion of the base 41 and a peripheral edge portion of the upper cover 42 are opened (hereinafter referred to as an "open state") by a lifting operation. For example, the annular shutter 43 is configured to descend from a closed state to an open state. The inner peripheral surface (center side surface) of the annular shutter 43 constitutes the peripheral surface 33 of the process chamber 31.
The annular shutter 43 is formed with an air supply passage 46. The air supply passage 46 is open to both the inner peripheral surface and the outer peripheral surface of the annular shutter 43. The opening of the air supply passage 46 in the inner peripheral surface of the annular shutter 43 corresponds to the air supply port 35.
The opening/closing drive unit 44 moves up and down the ring shutter 43 using, for example, a motor or the like as a power source.
As shown in fig. 4, the heat treatment section 50 has a plurality of heat treatment regions 51 arranged in the horizontal direction. Each of the plurality of heat treatment regions 51 has a heater such as an electric heating wire, and the temperature of each of the plurality of heat treatment regions 51 can be adjusted.
The plurality of heat treatment regions 51 are arranged in a circumferential direction of the wafer W supported by the heat treatment section 50. The heat treatment section 50 may further include heat treatment regions 51 arranged in the radial direction of the wafer W with respect to the plurality of heat treatment regions 51 arranged in the circumferential direction of the wafer W. For example, the plurality of heat treatment regions 51 include heat treatment regions 51A, 51B, 51C, and 51D arranged in the circumferential direction of the wafer W supported by the heat treatment portion 50 and facing the back surface Wc of the wafer W, and a heat treatment region 51E surrounded by these heat treatment regions 51A, 51B, 51C, and 51D and facing the center portion (including the center portion) of the back surface Wc.
Returning to fig. 3, the substrate lifting section 60 has a lifting section 61 and a lifting driving section 62. The lifting portion 61 has a plurality of (e.g., three) support pins 63 protruding upward. The lifting portion 61 is disposed below the central portions of the susceptor 41 and the heat treatment portion 50, and a plurality of support pins 63 are inserted into the susceptor 41 and the heat treatment portion 50. The elevation driving unit 62 elevates the elevation unit 61 using a motor or the like as a power source. The ends of the plurality of support pins 63 protrude to the heat treatment section 50 or retract from the heat treatment section 50 in response to the lifting of the lifting section 61, thereby lifting and lowering the wafer W on the heat treatment section 50.
The plurality of flow rate sensors 71 are, for example, thermistor type anemometers, and are configured to detect the flow rate of the gas flow circulating through the process chamber 31. The plurality of flow rate sensors 71 are provided outside the wafer W supported by the thermal processing unit 50. For example, the flow rate sensor 71 is provided at an opening portion (see fig. 3) of the air supply flow path 46 on the outer peripheral side of the annular shutter 43, and detects the flow rate of the air flow flowing out from the processing chamber 31 to the air supply port 35.
As shown in fig. 4, the plurality of flow rate sensors 71 are arranged in a circumferential direction of the wafer W supported by the heat treatment section 50. For example, as shown in fig. 4, the plurality of flow rate sensors 71 includes four flow rate sensors 71A, 71B, 71C, 71D arranged in the circumferential direction of the wafer W. In the circumferential direction of the wafer W, the flow rate sensors 71A, 71B, 71C, 71D are disposed so as to correspond to the heat treatment regions 51A, 51B, 51C, 51D, respectively, and "corresponding" here means overlapping in position in the circumferential direction of the wafer W.
Returning to fig. 3, the control section 100 controls the heat treatment section 50 to adjust the temperatures of the plurality of heat treatment regions 51 based on the temperature distribution corresponding to the flow rates of the air streams detected by the plurality of flow rate sensors 71. The control unit 100 may be configured to change the relationship between the flow rate and the temperature distribution of the gas flow detected by the plurality of flow rate sensors 71 according to the type of the processing liquid.
As a functional configuration (hereinafter referred to as "functional component"), the control unit 100 includes a coefficient database 112, a coefficient setting unit 111, a flow rate information acquisition unit 113, a temperature distribution setting unit 114, a temperature control unit 115, a lift control unit 116, and an opening/closing control unit 117.
The coefficient database 112 stores data for setting a relationship between the flow rate of the gas flow detected by the plurality of flow rate sensors 71 and the temperature distribution in the plurality of heat treatment regions 51 for each type of the processing liquid. For example, the coefficient database 112 stores the gas flow sensitivity and the temperature sensitivity in association with the type of the processing liquid (see fig. 5). The airflow sensitivity is a value indicating the amount of change in film thickness according to the increase in the flow rate of the airflow passing through the surface of the underlying film being formed. The temperature sensitivity is a value indicating the amount of change in film thickness according to the temperature rise of the underlayer film being formed. The data stored in the coefficient database 112 is prepared in advance by experiments.
The coefficient setting unit 111 sets a coefficient (hereinafter referred to as a "correlation coefficient") for determining a relationship between the flow rate of the gas flow detected by the plurality of flow rate sensors 71 and the temperature distribution in the plurality of heat treatment regions 51. For example, the coefficient setting unit 111 acquires the gas flow sensitivity and the temperature sensitivity corresponding to the type of the processing liquid applied to the wafer W from the coefficient database 112, and sets the gas flow sensitivity and the temperature sensitivity as the correlation coefficients.
The flow rate information acquisition unit 113 acquires information on the flow rate of the air flow detected by the plurality of flow rate sensors 71.
The temperature distribution setting unit 114 sets the temperature distribution in the plurality of heat treatment regions 51 using the information on the flow velocity of the air flow acquired by the flow velocity information acquisition unit 113 and the correlation coefficient set by the coefficient setting unit 111. For example, the temperature distribution setting unit 114 sets the temperature target value for each heat treatment region 51 by the following equation.
Tnew＝Told-Δv×Sv/St
Tnew: novel temperature target value
Told: the former temperature target value
Deltav: flow rate variation in the heat treatment region 51 (positive direction of increase)
Sv: airflow sensitivity
St: temperature sensitivity
As described above, since the flow rate sensors 71A, 71B, 71C, and 71D are arranged so as to correspond to the heat treatment regions 51A, 51B, 51C, and 51D, the detection value of the flow rate sensor 71A can be used as the flow rate in the heat treatment region 51A, the detection value of the flow rate sensor 71B can be used as the flow rate in the heat treatment region 51B, the detection value of the flow rate sensor 71C can be used as the flow rate in the heat treatment region 51C, and the detection value of the flow rate sensor 71D can be used as the flow rate in the heat treatment region 51D. In addition, the flow rate change amount can be obtained by using the difference from the past detection value.
The temperature control unit 115 controls the heat treatment unit 50 to adjust the temperatures of the plurality of heat treatment regions 51 based on the temperature distribution (temperature target value for each heat treatment region 51) set by the temperature distribution setting unit 114.
The elevation control unit 116 controls the substrate elevation unit 60 to elevate the elevation unit 61 in accordance with the loading of the wafer W into the heat treatment unit U2 and the unloading of the wafer W from the heat treatment unit U2.
The opening/closing control unit 117 controls the opening/closing driving unit 44 to raise and lower the annular shutter 43 in accordance with the loading of the wafer W into the heat treatment unit U2 and the unloading of the wafer W from the heat treatment unit U2.
The control unit 100 is composed of one or a plurality of control computers. For example, the control unit 100 includes a circuit 120 shown in fig. 6. The circuit 120 has a memory 122, a storage device 123, an input-output port 124, a timer 125, and one or more processors 121.
The storage device 123 has a storage medium readable by a computer, such as a hard disk. The storage medium stores a program for causing the coating unit U1 to execute a coating process described later. The storage medium may be a readable medium such as a nonvolatile semiconductor memory, a magnetic disk, or an optical disk. The memory 122 temporarily stores programs downloaded from the storage medium of the storage device 123 and the operation result of the processor 121. The processor 121 cooperates with the memory 122 to execute the program to constitute the functional components described above. The input/output port 124 inputs/outputs electrical signals to/from the flow rate sensor 71, the heat treatment section 50, the opening/closing drive section 44, and the substrate lifting/lowering section 60 in accordance with instructions from the processor 121. The timer 125 measures the elapsed time by counting, for example, reference pulses of a fixed period.
The hardware configuration of the control unit 100 is not limited to the program configuration of each functional component. For example, each functional component of the control unit 100 may be constituted by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit: application specific integrated circuit) in which the dedicated logic circuit is integrated.
[ Heat treatment Process ]
Next, as an example of the heat treatment method, a heat treatment process performed by controlling the heat treatment unit U2 by the control section 100 will be described. The heat treatment process comprises the following steps: a wafer W to be processed is carried into the processing chamber 31; a heat treatment section 50 for placing a wafer W in the process chamber 31; the heat treatment section 50 is controlled to heat the wafer W based on a temperature distribution corresponding to the flow rates of the air flows at a plurality of locations arranged in the circumferential direction of the wafer W. The relationship between the flow rate and the temperature distribution of the gas flow at a plurality of locations may be changed according to the type of the processing liquid.
Hereinafter, a specific example of a control process of the heat treatment unit U2 by the control unit 100 is shown. At the start time point of the present control process, the annular shutter 43 is set to be closed. In addition, in a state where the lifting/lowering portion 61 is lifted, the end portion of the support pin 63 is protruded to the heat treatment portion 50.
As shown in fig. 7, first, the control unit 100 executes step S01. In step S01, the coefficient setting unit 111 sets the correlation coefficient.
Next, the control unit 100 executes step S02. In step S02, the opening/closing control unit 117 controls the opening/closing driving unit 44 to lower the ring shutter 43 to switch the closed state to the open state.
Next, the control unit 100 executes step S03. In step S03, the opening/closing control unit 117 waits for completion of the loading of the wafer W by the transfer arm A3.
When the loading of the wafer W by the transfer arm A3 is completed (see fig. 8 a), the control unit 100 executes step S04. In step S04, the opening/closing control unit 117 controls the opening/closing driving unit 44 to raise the annular shutter 43 to switch the open state to the closed state (see fig. 8 b).
Next, the control unit 100 executes step S05. In step S05, the elevation control unit 116 controls the substrate elevation unit 60 to lower the elevation unit 61 to place the wafer W on the heat treatment unit 50 (see fig. 8 c).
Next, the control unit 100 executes step S06. In step S06, the flow rate information acquisition unit 113 acquires information on the flow rates detected by the plurality of flow rate sensors 71.
Next, the control unit 100 executes step S07. In step S07, the temperature distribution setting unit 114 sets the temperature distribution in the plurality of heat treatment regions 51 using the information on the flow rate acquired by the flow rate information acquisition unit 113 and the correlation coefficient set by the coefficient setting unit 111.
Next, the control unit 100 executes step S08. In step S08, the temperature control unit 115 controls the heat treatment unit 50 to adjust the temperatures of the plurality of heat treatment regions 51 based on the temperature distribution set by the temperature distribution setting unit 114.
Next, the control unit 100 executes step S09. In step S09, the temperature control unit 115 checks whether or not a predetermined time has elapsed. The predetermined time is set in advance to a time at which a sufficient heat treatment required for film formation can be performed.
When it is determined in step S09 that the predetermined time has not elapsed, the control unit 100 returns the process to step S06. Thereafter, until a predetermined time elapses, detection of the flow rate of the air flow and adjustment of the temperature distribution according to the flow rate of the air flow are repeated.
When it is determined in step S09 that the predetermined time has elapsed, the control unit 100 executes step S10. In step S10, the elevation control unit 116 controls the substrate elevation unit 60 to elevate the elevation unit 61 to elevate the wafer W from the heat treatment unit 50.
Next, the control unit 100 executes step S11. In step S11, the opening/closing control unit 117 controls the opening/closing driving unit 44 to lower the ring shutter 43 to switch the closed state to the open state.
Next, the control unit 100 executes step S12. In step S12, the opening/closing control unit 117 waits for the completion of the transfer of the wafer W by the transfer arm A3.
Next, the control unit 100 executes step S13. In step S13, the opening/closing control unit 117 controls the opening/closing driving unit 44 to raise the annular shutter 43 to switch the open state to the closed state. Through the above, the control process performed by the control section 100 on the heat treatment unit U2 is completed.
[ Effect of the present embodiment ]
According to the above description, the heat treatment apparatus 20 includes: a processing chamber 31 for accommodating a wafer W to be processed; a heat treatment section 50 provided in the processing chamber 31 for supporting and heating the wafer W, the heat treatment section 50 having at least a plurality of heat treatment regions 51 arranged in a circumferential direction of the wafer W; a gas supply port 35 for introducing a gas into the process chamber 31; an exhaust port 34 for exhausting gas from the process chamber 31; a plurality of flow rate sensors 71 arranged in the circumferential direction of the wafer W supported by the heat treatment section 50, for detecting the flow rate of the gas flow; and a control section 100 that controls the heat treatment section 50 to adjust the temperatures of the plurality of heat treatment regions 51 based on a temperature distribution corresponding to the flow rates of the air streams detected by the plurality of flow rate sensors 71.
In the processing chamber 31, there is a difference in the degree of heat treatment between a portion where the flow rate of the gas flow is high and a portion where the flow rate of the gas flow is low, and therefore, there is a case where uniformity of the film thickness after the heat treatment is lowered. Therefore, it is desirable to improve uniformity of the flow rate of the gas flow, but the gas flow distribution is also affected by conditions outside the process chamber 31, and thus difficult to control. In contrast, in the heat treatment apparatus 20, instead of controlling the flow rate distribution, the temperature of the plurality of heat treatment regions 51 is adjusted based on the temperature distribution corresponding to the flow rate of the gas flow, so that the decrease in the uniformity of the film thickness due to the flow rate distribution of the gas flow can be suppressed. Since the temperature distribution can be easily controlled as compared with the flow velocity distribution of the gas flow, if the temperature of the plurality of heat treatment regions 51 is adjusted based on the temperature distribution corresponding to the flow velocity of the gas flow, the decrease in the uniformity of the film thickness due to the flow velocity distribution of the gas flow can be easily suppressed. Further, since the flow velocity distribution of the air flow is detected in real time by the plurality of flow velocity sensors 71, the temperature distribution can be adjusted in accordance with the flow velocity distribution, and therefore, even when the flow velocity of the air flow changes with time due to external factors, the temperature distribution can be appropriately adjusted in response to the change, and the influence of the change in the flow velocity can be suppressed. The plurality of heat treatment regions 51 and the plurality of flow rate sensors 71 are arranged in the circumferential direction of the wafer W. This configuration is suitable for suppressing the influence of the flow velocity distribution in the circumferential direction of the wafer W. The difference in the flow velocity of the air flow tends to occur between different positions in the circumferential direction of the wafer W. Therefore, according to the structure suitable for suppressing the influence of the flow velocity distribution in the circumferential direction of the wafer W, the influence of the flow velocity distribution can be suppressed more reliably. Thus, the heat treatment apparatus 20 is effective for improving the uniformity of the film thickness at the time of film formation.
The wafer W may be coated with the processing liquid for forming the underlayer film, and the control unit 100 may be configured to change the relationship between the flow rate and the temperature distribution of the gas flow detected by the plurality of flow rate sensors 71 according to the type of the processing liquid. In this case, by appropriately setting the relationship between the flow velocity distribution and the temperature distribution of the gas flow according to the type of the processing liquid, it is possible to more reliably suppress the decrease in the film thickness uniformity due to the flow velocity distribution of the gas flow.
The plurality of flow rate sensors 71 may be arranged so as to correspond to the plurality of heat treatment regions 51 in the circumferential direction of the wafer W. In this case, since the flow rate of the air flow in each heat treatment region 51 is directly detected, the temperature set value of the heat treatment region 51 can be easily derived.
The plurality of flow rate sensors 71 may be provided outside the wafer W supported by the thermal processing unit 50. In this case, the flow rate of the gas flow on the wafer W can be detected without being disturbed by the flow rate sensor 71.
The inner surface of the processing chamber 31 may include an upper surface 32 facing the surface Wa of the wafer W supported by the heat treatment section 50 and a peripheral surface 33 surrounding the wafer W supported by the heat treatment section 50, the exhaust port 34 may be provided in a central portion of the upper surface 32, and the gas supply port 35 may be provided so as to surround the wafer W along the peripheral surface 33. In this case, since the difference in flow velocity of the gas flow tends to be more remarkable between the different positions in the circumferential direction of the wafer W, the arrangement in which the plurality of heat treatment regions 51 and the plurality of flow velocity sensors 71 are arranged in the circumferential direction of the wafer W more effectively functions.
Although the embodiments have been described above, the present invention is not necessarily limited to the above-described embodiments, and various modifications can be made without departing from the spirit thereof.
For example, as shown in fig. 9, flow rate sensors 71A, 71B, 71C, and 71D may be provided at openings of the air supply flow path 46 on the inner peripheral side of the annular shutter 43. In this case, the flow rate sensors 71A, 71B, 71C, 71D detect the flow rate of the air flow flowing from the air supply port 35 to the air discharge port 34.
As shown in fig. 10, a plurality of flow rate sensors 71 aligned in the circumferential direction of the wafer W may be provided with flow rate sensors 71 aligned in the radial direction of the wafer W. In this case, the temperatures of the plurality of heat treatment regions 51 can be adjusted based on the temperature distribution corresponding to the flow velocity distribution in the radial direction of the wafer W in addition to the flow velocity distribution of the gas flow in the circumferential direction of the wafer W. The number of heat treatment regions 51 arranged in the radial direction of the wafer W may be increased so as to finely correspond to the flow velocity distribution in the radial direction of the wafer W. As an example, in the heat treatment section 50 shown in fig. 11, heat treatment regions 51F, 51G, 51H, and 51I arranged along the circumferential direction of the wafer W are added between the heat treatment region 51E and the heat treatment regions 51A, 51B, 51C, and 51D.
The arrangement of the air supply port 35 and the air discharge port 34 is not limited to the above. For example, both the air supply port 35 and the air exhaust port 34 may be provided on the peripheral surface 33 to generate an air flow that traverses the process chamber 31 in the horizontal direction.
The detection of the flow rate of the air flow and the adjustment of the temperature distribution according to the flow rate of the air flow do not have to be repeatedly performed as exemplified in steps S06 to S09. When the flow rate of the gas flow in the processing chamber 31 is stable with time, the flow rate of the gas flow may be measured under a preset condition, the temperature distribution in the plurality of heat treatment regions 51 may be set in accordance with the flow rate, and then the heat treatment unit 50 may be controlled based on the same temperature distribution to adjust the temperatures of the plurality of heat treatment regions 51. In this case, the flow rate sensor 71 may be removed after the condition is set.
The heat treatment process is not only a heat treatment but also a cooling treatment. That is, a cooler such as a refrigerant pipe may be provided in the heat treatment region 51 instead of the heater.
The heat treatment process can also be applied to a heat treatment for forming a coating film (e.g., a resist film or the like) other than an underlying film.
The substrate to be processed is not limited to a semiconductor wafer, and may be, for example, a glass substrate, a mask substrate, an FPD (Flat Panel Display: flat panel display), or the like.
Claims (5)
1. A heat treatment apparatus is provided with:
a processing chamber that accommodates a substrate to be processed;
a heat treatment section for supporting the substrate in the treatment chamber and heating or cooling the substrate, the heat treatment section having a plurality of heat treatment regions arranged in a circumferential direction of the substrate;
a gas supply port for introducing a gas into the processing chamber;
an exhaust port that exhausts gas from the process chamber;
a plurality of flow rate sensors arranged in a circumferential direction of the substrate supported by the heat treatment section to detect a flow rate of the gas flow; and
a control section that controls the heat treatment section based on a temperature distribution corresponding to the flow rates of the air streams detected by the plurality of flow rate sensors to adjust the temperatures of the plurality of heat treatment regions,
wherein the substrate to be processed is a substrate coated with a processing liquid,
the control unit is configured to change a relationship between the flow rate of the gas flow detected by the plurality of flow rate sensors and the temperature distribution according to the type of the processing liquid,
the plurality of flow rate sensors are arranged in the circumferential direction of the substrate so as to correspond to the plurality of heat treatment regions, respectively.
2. A heat treatment apparatus according to claim 1, wherein,
the plurality of flow rate sensors are provided outside the substrate supported by the heat treatment section.
3. A heat treatment apparatus according to claim 1, wherein,
the inner surface of the processing chamber includes an upper surface facing the surface of the substrate supported by the heat treatment section and a peripheral surface surrounding the substrate,
the exhaust port is provided at a central portion of the upper surface,
the air supply port is provided so as to surround the substrate along the peripheral surface.
4. A heat treatment method comprising:
carrying a substrate to be processed into a processing chamber;
placing the substrate on a heat treatment section in the treatment chamber;
the heat treatment section is controlled to heat or cool the substrate based on a temperature distribution corresponding to flow rates of air flows at a plurality of locations arranged in a circumferential direction of the substrate,
wherein the substrate to be processed is a substrate coated with a processing liquid,
changing a relationship between flow rates of the gas flows at the plurality of locations and the temperature distribution according to the kind of the processing liquid,
in the circumferential direction of the substrate, a plurality of flow rate sensors are arranged so as to correspond to the plurality of heat treatment regions, respectively.
5. A computer-readable storage medium storing a program for causing an apparatus to execute the heat treatment method according to claim 4.
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| JP2017145702A JP6955928B2 (en) | 2017-07-27 | 2017-07-27 | Heat treatment equipment, heat treatment method and storage medium |
| JP2017-145702 | 2017-07-27 |
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| CN110690134B (en) * | 2019-09-12 | 2022-07-01 | 长江存储科技有限责任公司 | Method and device for detecting gas leakage of multi-station deposition process and readable storage medium |
| CN113838767B (en) * | 2020-06-08 | 2023-12-12 | 长鑫存储技术有限公司 | Developing device and developing method |
| CN116313946B (en) * | 2023-05-24 | 2023-10-17 | 长鑫存储技术有限公司 | Temperature adjusting system and adjusting method |
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| JP2019029450A (en) | 2019-02-21 |
| KR20190013473A (en) | 2019-02-11 |
| CN109309033A (en) | 2019-02-05 |
| KR102502024B1 (en) | 2023-02-21 |
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