CN109309033A - Annealing device, heat treatment method and storage medium - Google Patents
Annealing device, heat treatment method and storage medium Download PDFInfo
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- CN109309033A CN109309033A CN201810841102.4A CN201810841102A CN109309033A CN 109309033 A CN109309033 A CN 109309033A CN 201810841102 A CN201810841102 A CN 201810841102A CN 109309033 A CN109309033 A CN 109309033A
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- 238000000034 method Methods 0.000 title claims abstract description 85
- 238000010438 heat treatment Methods 0.000 title claims abstract description 82
- 238000000137 annealing Methods 0.000 title claims abstract description 24
- 238000003860 storage Methods 0.000 title claims abstract description 17
- 238000007669 thermal treatment Methods 0.000 claims abstract description 74
- 238000009826 distribution Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims description 63
- 238000011282 treatment Methods 0.000 claims description 32
- 239000012530 fluid Substances 0.000 claims description 20
- 230000008676 import Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 16
- 235000012431 wafers Nutrition 0.000 description 100
- 125000004122 cyclic group Chemical group 0.000 description 16
- 239000012528 membrane Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 10
- 230000003028 elevating effect Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000004744 fabric Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The disclosure is provided for improving the effective annealing device of film thickness uniformity, heat treatment method and storage medium when overlay film formation.Annealing device (20) has: process chamber (31), stores the wafer (W) as process object；Heat treatment portion (50), is arranged in process chamber, for supporting and heating wafer, has the multiple thermal treatment zones (51) at least arranged in the circumferential direction of the wafer；Air supply opening (35), gas is imported into process chamber；Exhaust outlet (34), is discharged gas out of process chamber；Multiple flow sensors (71), in the circumferential array for the wafer that heat treatment portion is supported, for detecting the flow velocity of air-flow；And control unit (100), it is adjusted based on Temperature Distribution corresponding with the flow velocity of air-flow detected by multiple flow sensors to control heat treatment portion with the temperature to multiple thermal treatment zones.
Description
Technical field
This disclosure relates to annealing device, heat treatment method and storage medium.
Background technique
Patent document 1 discloses a kind of annealing device, has: mounting portion is arranged in process container, for carrying
Set substrate；Heating part is used to heat the substrate for being placed in mounting portion；Air supply opening, along the periphery of substrate
Mode is arranged, and for supplying into process container, the position of the side of the periphery of substrate is arranged in；And exhaust outlet, it is used for
It is vented out of process container, the top of the central portion of substrate is set.
Patent document 1: Japanese Unexamined Patent Publication 2016-115919 bulletin
Summary of the invention
Problems to be solved by the invention
The purpose of the present disclosure is to provide for improve overlay film formation when the effective annealing device of film thickness uniformity,
Heat treatment method and storage medium.
The solution to the problem
The annealing device of the disclosure related in one aspect to has: process chamber, stores the substrate as process object；Heat
Processing unit is arranged in process chamber, for supporting substrates and heats the substrate or cool down, which has at this
The multiple thermal treatment zones arranged in the circumferential direction of substrate；Air supply opening imports gas into process chamber；Exhaust outlet, from processing
Indoor discharge gas；Multiple flow sensors are configured in a manner of arranging in the circumferential direction of the substrate supported in heat treatment portion,
For detecting the flow velocity of air-flow；And control unit, based on corresponding with the flow velocity of air-flow detected by multiple flow sensors
Temperature Distribution is adjusted to control heat treatment portion with the temperature to multiple thermal treatment zones.
In process chamber, between at the high position of the flow velocity of air-flow with low position, it is heat-treated the degree meeting of progress
The case where uniformity for generating difference, therefore depositing film thickness after heat treatment reduces.Therefore, it is desirable to improve the equal of the flow velocity of air-flow
Even property, but air flow method is also subject to processing the influence of outdoor all many conditions and is difficult to control.In contrast, it is filled in this heat treatment
In setting, instead of the control to air flow method, by based on Temperature Distribution corresponding with the flow velocity of air-flow come to multiple heat-treatment zones
The temperature in domain is adjusted, inhibit because air-flow velocity flow profile caused by film thickness uniformity reduce.With the velocity flow profile of air-flow
In comparison, Temperature Distribution can be controlled easily, thus if be configured to based on temperature corresponding with the flow velocity of air-flow point
The temperature of multiple thermal treatment zones is adjusted in cloth, then can easily suppress film thickness caused by the velocity flow profile because of air-flow
Uniformity reduce.In addition, detecting the velocity flow profile of air-flow in real time using multiple flow sensors, and can be correspondingly
Temperature Distribution is adjusted, thus in the case where being changed over time due to outer thus air-flow flow velocity, it also can be appropriate in view of this
Ground adjusts Temperature Distribution, is able to suppress the influence of change in flow.In addition, multiple thermal treatment zones and multiple flow sensors are equal
It is configured to arrange in the circumferential direction of substrate.The configuration is suitable for inhibiting the influence of the velocity flow profile in the circumferential direction of substrate.Air-flow
The difference of flow velocity have the tendency that being easy to produce between the different position in the position in the circumferential direction of substrate.Therefore, according to suitable
In the structure of the influence of the velocity flow profile in the circumferential direction for inhibiting substrate, it can more reliably inhibit the influence of velocity flow profile.Cause
And this annealing device is effective for improving film thickness uniformity when overlay film is formed.
It is also possible to as the substrate of process object be the substrate for being applied treatment fluid, control unit is configured to according to place
Manage the relationship between flow velocity and Temperature Distribution of the type of liquid to change the air-flow detected by multiple flow sensors.In the situation
Under, the relationship between the velocity flow profile of air-flow and Temperature Distribution, Neng Gougeng are suitably set by the type according to treatment fluid
Adding the uniformity of film thickness caused by being reliably suppressed the velocity flow profile because of air-flow reduces.
It is also possible to the circumferential direction in substrate, multiple flow sensors are in a manner of corresponding with multiple thermal treatment zones
Configuration.In this case, it due to directly exporting the flow velocity of the air-flow in each thermal treatment zone, can easily export multiple
The desired temperature of thermal treatment zone.
It is also possible to multiple flow sensors and the position of substrate that specific heat processing unit is supported in the outer part is set.At this
In the case of, the air-flow on substrate will not be able to detect the flow velocity of air-flow because of flow sensor multilated.
The inner surface for being also possible to process chamber include the opposite upper surface in surface of the substrate supported with heat treatment portion with
And surround the circumferential surface of the substrate；The central portion of upper surface is arranged in exhaust outlet；Air supply opening is to surround the side of substrate along circumferential surface
Formula setting.In this case, the difference of the flow velocity of air-flow is easy to produce between the different position in the position in the circumferential direction of substrate
Tendency become more significant, thus the configuration that multiple thermal treatment zones and multiple flow sensors arrange in the circumferential direction of substrate
More efficiently play a role.
Heat treatment method involved in the other aspects of the disclosure includes: that the substrate as process object is moved in process chamber
It is interior；By substrate-placing in the indoor heat treatment portion of processing；Based on the gas at multiple positions for being arranged in the circumferential direction of substrate
The corresponding Temperature Distribution of the flow velocity of stream controls heat treatment portion to heat the substrate or cool down.
Be also possible to as the substrate of process object be the substrate for being applied treatment fluid, according to the type for the treatment of fluid come
Change the relationship between the flow velocity and Temperature Distribution of the air-flow at multiple positions.
Computer-readable storage medium involved in another aspect of the present disclosure is stored with program, and described program is used for
Device is set to execute the heat treatment method.
The effect of invention
The effective annealing device of film thickness uniformity, heat according to the disclosure, when being capable of providing for raising overlay film formation
Processing method and storage medium.
Detailed description of the invention
Fig. 1 is the perspective view for showing the outline structure of substrate liquid treating system.
Fig. 2 is the sectional view for showing the outline structure of coating developing apparatus.
Fig. 3 is the schematic diagram for showing the outline structure of thermal treatment unit.
Fig. 4 is to illustrate the schematic diagram of the configuration of thermal treatment zone and flow sensor.
Fig. 5 is the table for showing the storage content in coefficient data library.
Fig. 6 is to illustrate the block diagram of the hardware configuration of control unit.
Fig. 7 is the flow chart for showing heat treatment process.
Fig. 8 is the schematic diagram for showing the state for being heat-treated wafer in execution.
Fig. 9 is the schematic diagram for showing the variation of thermal treatment unit.
Figure 10 is the schematic diagram for showing other variations of thermal treatment unit.
Figure 11 is the schematic diagram for showing another other variations of thermal treatment unit.
Description of symbols
20: annealing device；50: heat treatment portion；71,71A, 71B, 71C, 71D: flow sensor；31: process chamber；35:
Air supply opening；34: exhaust outlet；32: upper surface；33: circumferential surface；51,51A, 51B, 51C, 51D, 51E, 51F, 51H, 51I: heat treatment
Region；100: control unit.
Specific embodiment
(base plate processing system)
Base plate processing system 1 is to implement the formation of photonasty overlay film, the exposure and the sense of the photonasty overlay film to substrate
The system of the development of photosensitiveness overlay film.Substrate as process object is, for example, semiconductor crystal wafer W.Photonasty overlay film is e.g. against corrosion
Film.Base plate processing system 1 has coating developing apparatus 2 and exposure device 3.Exposure device 3 is to forming on wafer W (substrate)
Etchant resist (photonasty overlay film) is exposed processing.Specifically, by the methods of immersion exposure come the exposure pair to etchant resist
As partial illumination energy-ray.Coating developing apparatus 2 carries out before exposure device 3 is exposed processing at wafer W (substrate)
Surface formed etchant resist processing, after exposure-processed carry out etchant resist development treatment.
(substrate board treatment)
Hereinafter, an example as substrate board treatment, illustrates the structure for being coated with developing apparatus 2.As depicted in figs. 1 and 2, it applies
Cloth developing apparatus 2 has load-bearing part module 4, processing module 5, interface module 6 and control unit 100.
Load-bearing part module 4 is used into coating developing apparatus 2 import wafer W and exports out of coating developing apparatus 2 brilliant
Circle W.Such as load-bearing part module 4 can support multiple load-bearing part C of wafer W, and be built-in with handover arm A1.Load-bearing part C
Such as store circular multiple wafers W.Handover arm A1 takes out wafer W from load-bearing part C and is sent to processing module 5, connects from processing module 5
By wafer W and it is restored in load-bearing part C.
Processing module 5 has multiple processing components 11,12,13,14.Processing component 11,12,13 is built-in with coater unit
U1, thermal treatment unit U2 and carrying arm A3 for wafer W to be transported to these units.
Processing component 11 forms lower membrane on the surface of wafer W using coater unit U1 and thermal treatment unit U2.Place
The treatment fluid of lower membrane formation is applied on wafer W by the coater unit U1 of reason component 11.The heat treatment list of processing component 11
First U2 carries out the various heat treatments of the formation with lower membrane.
Processing component 12 forms etchant resist using coater unit U1 and thermal treatment unit U2 in lower membrane.Processing component
The treatment fluid of etchant resist formation is applied in lower membrane by 12 coater unit U1.The thermal treatment unit U2 of processing component 12 into
The various heat treatments of the formation of the adjoint etchant resist of row.
Processing component 13 forms upper layer film using coater unit U1 and thermal treatment unit U2 on etchant resist.Processing component
The liquid of upper layer film formation is applied on etchant resist by 13 coater unit U1.The thermal treatment unit U2 of processing component 13 is carried out
With the various heat treatments of the formation of upper layer film.
Processing component 14 is built-in with developing cell U3, thermal treatment unit U4 and for wafer W to be transported to these units
Carrying arm A3.
Processing component 14 carries out development treatment to the etchant resist after exposure using developing cell U3 and thermal treatment unit U4.
Developing cell U3 is coated with after developer solution on the surface of the wafer W completed to exposure, by rinsing wafer W using flushing liquor
Surface carry out the development treatment of etchant resist.Thermal treatment unit U4 carries out the various heat treatments with development treatment.As heat
The concrete example of processing, heat treatment (PEB:Post Exposure Bake (being dried after exposure)), development before enumerating development treatment
Heat treatment that treated (PB:Post Bake (rear to dry)) etc..
4 side of load-bearing part module in processing module 5 is provided with shelving unit U10.Shelving unit U10 is divided into upper
Multiple units that lower section arranges upwards.Lifting arm A7 is provided near shelving unit U10.Lifting arm A7 makes wafer W in canopy
It is gone up and down between the unit of frame unit U10.
6 side of interface module in processing module 5 is provided with shelving unit U11.Shelving unit U11 is divided into upper and lower
The multiple units arranged on direction.
The handover of wafer W is carried out between interface module 6 and exposure device 3.For example, interface module 6 is built-in with handover arm A8,
It is connect with exposure device 3.Handover arm A8 will be configured and is sent to exposure device 3 in the wafer W of shelving unit U11, be connect from exposure device 3
By wafer W and it is restored to shelving unit U11.
100 pairs of coating developing apparatus 2 of control unit are controlled to execute coating development treatment according to such as following procedure.
Firstly, the control of control unit 100 joins arm A1 so that the wafer W in load-bearing part C is transported to shelving unit U10, and control lifting arm
Wafer W to be configured to the unit of processing component 11 by A7.
Then, control unit 100 controls carrying arm A3 so that the wafer W of shelving unit U10 to be transported in processing component 11
Coater unit U1 and thermal treatment unit U2, and coater unit U1 and thermal treatment unit U2 are controlled on the surface of wafer W
Upper formation lower membrane.Later, control unit 100 controls carrying arm A3 so that the wafer W for being formed with lower membrane is restored to shelving unit
U10, and lifting arm A7 is controlled so that wafer W to be configured to the unit of processing component 12.
Then, control unit 100 controls carrying arm A3 so that the wafer W of shelving unit U10 to be transported in processing component 12
Coater unit U1 and thermal treatment unit U2, and coater unit U1 and thermal treatment unit U2 are controlled in the lower layer of wafer W
Etchant resist is formed on film.Later, control unit 100 controls carrying arm A3 so that wafer W is restored to shelving unit U10, and controls liter
Arm A7 is dropped so that wafer W to be configured to the unit of processing component 13.
Then, control unit 100 controls carrying arm A3 so that the wafer W of shelving unit U10 to be transported in processing component 13
Each unit, and coater unit U1 and thermal treatment unit U2 are controlled to form upper layer film on the etchant resist of wafer W.Later,
Control unit 100 controls carrying arm A3 so that wafer W is transported to shelving unit U11.
Then, the control of control unit 100 handover arm A8 is to pass out to exposure device 3 for the wafer W of shelving unit U11.Later,
The control of control unit 100 handover arm A8 is configured to frame list to have carried out the wafer W of exposure-processed from the receiving of exposure device 3
The unit of processing component 14 in first U11.
Then, control unit 100 controls carrying arm A3 so that the wafer W of shelving unit U11 to be transported in processing component 14
Each unit, and control developing cell U3 and thermal treatment unit U4 and development treatment is implemented with the etchant resist to wafer W.Later,
Control unit 100 control carrying arm A3 wafer W is restored to shelving unit U10, and control lifting arm A7 and handover arm A1 with
Wafer W is restored in load-bearing part C.By the above, coating development treatment is completed.
In addition, the specific structure of substrate board treatment is not limited to the structure of the coating developing apparatus 2 of the above illustration.Base
If plate processing unit has thermal treatment unit U2 and the control unit that can be controlled it 100, any knot can be
Structure.
(annealing device)
Then, as an example of annealing device, illustrate the knot for being coated with annealing device 20 included by developing apparatus 2
Structure.As shown in figure 3, annealing device 20 has the thermal treatment unit U2 of control unit 100 and processing component 11.Annealing device
20 be to carry out heat-treating apparatus to the wafer W for the treatment fluid for being applied the lower membrane formation.Lower membrane is, for example, to revolve
Apply the so-called hard exposure masks such as carbon (SOC) film.
Thermal treatment unit U2 has chamber 30, heat treatment portion 50, substrate elevating portion 60 and multiple flow sensors 71.Chamber
Room 30 includes process chamber of the storage as the wafer W (the wafer W for being applied the treatment fluid of lower membrane formation) of process object
31, into process chamber 31 import gas air supply opening 35, out of process chamber 31 be discharged gas exhaust outlet 34.Heat treatment portion 50 is set
It sets in process chamber 31, for supporting wafer W and being heated to wafer W.Substrate elevating portion 60 makes wafer W in heat treatment portion 50
Upper lifting.Multiple flow sensors 71 are configured to arrange in the circumferential direction for the wafer W that the portion that is heat-treated 50 supports, for detecting
The flow velocity of the air-flow to circulate in process chamber 31.Detection flows to the flow velocity of the air-flow of air supply opening 35 outside process chamber 31, measures from confession
The flow velocity that port 35 flows to the flow velocity of the air-flow of exhaust outlet 34 and detection flows to air-flow outside process chamber 31 from exhaust outlet 34 is equal
It is equivalent to the flow velocity for the air-flow that detection is circulated in process chamber 31.
The inner surface of process chamber 31 also may include the opposite upper table of the surface Wa of the wafer W supported with heat treatment portion 50
The central portion in upper surface 32 also can be set in face 32 and the circumferential surface 33 for surrounding wafer W, exhaust outlet 34, and air supply opening 35 can also
It is configured by a manner of surrounding wafer W along circumferential surface 33.Air supply opening 35 is configured in a manner of surrounding wafer W including one
The case where a air supply opening 35 extends in the range of the center around wafer W is more than 180 ° further includes in addition to this multiple air supply openings
35 the case where being distributed in the range of the center around wafer W is more than 180 °.
Hereinafter, the knot of chamber 30, heat treatment portion 50, substrate elevating portion 60 and flow sensor 71 is described in more detail
Structure.
Chamber 30 includes pedestal 41, upper cover 42, cyclic annular gate 43, driven for opening and closing portion 44 and substrate elevating portion 60.
Pedestal 41 forms the bottom of chamber 30, and supporting hot processing unit 50.
The top of pedestal 41 is arranged in upper cover 42, and process chamber 31 is constituted between pedestal 41.The lower surface of upper cover 42 is constituted
The upper surface 32 of process chamber 31.
Exhaust flow path 45 is formed in the central portion of upper cover 42.Central portion of the lower end of exhaust flow path 45 in upper surface 32 is opened
Mouthful.The opening of exhaust flow path 45 at the central portion of upper surface 32 is equivalent to above-mentioned exhaust outlet 34.The upper end of exhaust flow path 45 with
Exhaust pipe 47 outside chamber 30 connects.
Cyclic annular gate 43 is the ring bodies in the space (i.e., process chamber 31) surrounded between pedestal 41 and upper cover 42.Cyclic annular lock
Door 43 is configured to through lifting action come to state closed between the peripheral part of pedestal 41 and the peripheral part of upper cover 42 is (following
Referred to as " closed state ") and the state opened between the peripheral part of pedestal 41 and the peripheral part of upper cover 42 (hereinafter referred to as " opened into shape
State ") it switches over.For example, cyclic annular gate 43 is configured to decline from closed state and become open state.The inner circumferential of cyclic annular gate 43
The circumferential surface 33 of face (face of central side) composition process chamber 31.
Gas supply flow path 46 is formed in cyclic annular gate 43.Supply flow path 46 cyclic annular gate 43 inner peripheral surface and outer peripheral surface this
Two sides opening.It supplies flow path 46 and is equivalent to above-mentioned air supply opening 35 in the opening of the inner peripheral surface of cyclic annular gate 43.
Driven for opening and closing portion 44 is such as go up and down as power source cyclic annular gate 43 motor.
As shown in figure 4, heat treatment portion 50 has the multiple thermal treatment zones 51 arranged in the horizontal direction.Multiple heat treatments
Region 51 is respectively built-in with the heater such as heating wire, can carry out temperature adjusting by each thermal treatment zone 51.
Multiple thermal treatment zones 51 are configured in a manner of arranging in the circumferential direction of the wafer W supported in heat treatment portion 50.?
It can be, heat treatment portion 50 also has for the multiple thermal treatment zones 51 arranged in the circumferential direction in wafer W in wafer W
The thermal treatment zone 51 radially arranged.Such as multiple thermal treatment zones 51 include the wafer W supported in heat treatment portion 50
Circumferential direction on arrange and thermal treatment zone 51A, 51B, 51C, the 51D opposite with the back side Wc of wafer W and be heat-treated by these
Region 51A, 51B, 51C, 51D are surrounded and the thermal treatment zone 51E opposite with the central portion of back side Wc (part including center).
Fig. 3 is returned to, substrate elevating portion 60 has lifting unit 61 and lifting driving portion 62.Lifting unit 61 has to be protruded upwards
More (such as three) fulcrum posts 63.The lower section for the central portion that lifting unit 61 configured in pedestal 41 and heat treatment portion 50, it is multiple
Fulcrum post 63 is inserted into pedestal 41 and heat treatment portion 50.Lifting driving portion 62 makes 61 liters of lifting unit using motor etc. as power source
Drop.Lifting with lifting unit 61 correspondingly, protrudes or from heat treatment portion 50 in the end heat treated portion 50 of multiple fulcrum posts 63
On retract, go up and down the wafer W in heat treatment portion 50.
Multiple flow sensors 71 are, for example, the airspeedometer of thermistor-type, and are configured to detection and circulate in process chamber 31
Air-flow flow velocity.The position of wafer W that specific heat processing unit 50 is supported in the outer part is arranged in multiple flow sensors 71.Such as
The opening portion (referring to Fig. 3) of the gas supply flow path 46 in the peripheral side of cyclic annular gate 43 is arranged in flow sensor 71, detects from
The flow velocity of the air-flow of air supply opening 35 is flowed to outside reason room 31.
As shown in figure 4, side of multiple flow sensors 71 to be arranged in the circumferential direction for the wafer W that heat treatment portion 50 is supported
Formula configuration.For example, as shown in figure 4, multiple flow sensors 71 include four flow sensors arranged in the circumferential direction of wafer W
71A,71B,71C,71D.In the circumferential direction of wafer W, flow sensor 71A, 71B, 71C, 71D with thermal treatment zone 51A, 51B,
The corresponding mode of 51C, 51D configures, and " correspondence " here means that the position in the circumferential direction of wafer W is overlapped.
Fig. 3 is returned to, control unit 100 is based on temperature corresponding with the flow velocity of air-flow detected by multiple flow sensors 71 point
Cloth is adjusted to control heat treatment portion 50 with the temperature to multiple thermal treatment zones 51.It is also possible to control unit 100 to be configured to
Change the relationship between the flow velocity and Temperature Distribution of the air-flow detected by multiple flow sensors 71 according to the type for the treatment of fluid.
As structure (hereinafter referred to as " functional unit ") functionally, control unit 100 has coefficient data library 112, coefficient
Configuration part 111, flow rate information acquisition unit 113, temperature profile portion 114, temperature control part 115, elevating control portion 116 and
Open and close control portion 117.
Coefficient data library 112 is stored with by each type for the treatment of fluid and is detected for setting by multiple flow sensors 71
The data of the relationship between Temperature Distribution in the flow velocity of air-flow and multiple thermal treatment zones 51.Such as coefficient data library 112 will
Flow sensitivity and temperature sensitivity are correspondingly stored with the type for the treatment of fluid (referring to Fig. 5).Flow sensitivity is table
Show that the flow velocity with the air-flow on the surface by the lower membrane in being formed rises the numerical value of corresponding Thickness Variation amount.Temperature sensitivity
It is to indicate that the temperature with the lower membrane in formation rises the numerical value of corresponding Thickness Variation amount.The number that coefficient data library 112 stores
According to be by test pre-production.
The flow velocity of air-flow of the setting of coefficient configuration part 111 for determining to be detected by multiple flow sensors 71 and multiple heat
Manage the coefficient (hereinafter referred to as " related coefficient ") of the relationship between the Temperature Distribution in region 51.Such as coefficient configuration part 111 from
Coefficient data library 112 obtains flow sensitivity corresponding with the type for the treatment fluid for being coated on wafer W and temperature sensitivity, and
It is set to the related coefficient.
Flow rate information acquisition unit 113 obtains the information of the flow velocity of the air-flow detected by multiple flow sensors 71.
Temperature profile portion 114 using the flow velocity of the air-flow got by flow rate information acquisition unit 113 information and
The related coefficient set by coefficient configuration part 111, to set the Temperature Distribution in multiple thermal treatment zones 51.Such as Temperature Distribution
Configuration part 114 sets the temperature target of each thermal treatment zone 51 using the following formula.
Tnew=Told- Δ v × Sv/St
Tnew: new temperature target
Told: previous temperature target
Δ v: the change in flow amount in thermal treatment zone 51 (increase direction is positive direction)
Sv: flow sensitivity
St: temperature sensitivity
As described above, flow sensor 71A, 71B, 71C, 71D are with right respectively with thermal treatment zone 51A, 51B, 51C, 51D
The mode answered configures, therefore the detected value for being able to use flow sensor 71A is used as the flow velocity on thermal treatment zone 51A
The detected value of flow sensor 71B as the flow velocity on thermal treatment zone 51B, use the detected value of flow sensor 71C as
Flow velocity on thermal treatment zone 51C uses the detected value of flow sensor 71D as the flow velocity on thermal treatment zone 51D.Separately
Outside, it can utilize and the difference of past detected value finds out change in flow amount.
Temperature control part 115 based on the Temperature Distribution set by temperature profile portion 114 (each thermal treatment zone 51
Temperature target) it is adjusted to control heat treatment portion 50 with the temperature to multiple thermal treatment zones 51.
116 control base board lifting unit 60 of elevating control portion with wafer W is moved in heat treated unit U2 and from Re Chu
Moving out wafer W correspondingly in reason unit U2 goes up and down lifting unit 61.
Open and close control portion 117 control driven for opening and closing portion 44 with wafer W is moved in heat treated unit U2 and from Re Chu
Moving out wafer W correspondingly in reason unit U2 goes up and down cyclic annular gate 43.
Control unit 100 is made of one or more control computer.Such as control unit 100 has electricity shown in fig. 6
Road 120.Circuit 120 have memory 122, storage device 123, input/output port 124, timer 125 and one or
Multiple processors 121.
Storage device 123 has the storage medium that can be read by computer such as hard disk.Storage medium, which is stored with, to be made to apply
Cloth unit U1 executes the program of aftermentioned coating process.Storage medium be also possible to non-volatile semiconductor memory,
The medium that disk and CD etc. can be read.Memory 122 is temporarily stored from the downloading of the storage medium of storage device 123
The operation result of program and processor 121.Processor 121 cooperates to execute described program with memory 122, thus on constituting
Each functional unit stated.Input/output port 124 is according to the instruction from processor 121, with flow sensor 71, heat treatment portion
50, the input and output of electric signal are carried out between driven for opening and closing portion 44 and substrate elevating portion 60.Timer 125 is for example by solid
The reference pulse of fixed cycle is counted to measure by the time.
In addition, the hardware configuration of control unit 100, which is not necessarily defined in, is made of each functional unit program.Such as control unit
100 each functional unit can also be by dedicated logic circuit or by its integrated ASIC (Application Specific
Integrated Circuit: specific integrated circuit) it constitutes.
(heat treatment process)
Then, as an example of heat treatment method, illustrate to be performed by controlling thermal treatment unit U2 by control unit 100
Heat treatment process.The heat treatment process includes: that the wafer W as process object is moved in process chamber 31；Wafer W is loaded
Onto the heat treatment portion 50 in process chamber 31；Based on the flow velocity with the air-flow at multiple positions for being arranged in the circumferential direction of wafer W
Corresponding Temperature Distribution controls heat treatment portion 50 to heat to wafer W.It is also possible to be changed according to the type for the treatment of fluid
Become the relationship between the flow velocity and Temperature Distribution of the air-flow at multiple positions.
Hereinafter, showing control unit 100 to the concrete example of the control process of thermal treatment unit U2.In addition, in this control process
At the beginning of point, be set as cyclic annular gate 43 be closed state.In addition, being set as propping up in the state of after lifting unit 61 is in and rises
It consigns prominent in 63 end heat treated portion 50.
As shown in fig. 7, firstly, control unit 100 executes step S01.In step S01, coefficient configuration part 111 sets described
Related coefficient.
Then, control unit 100 executes step S02.In step S02, open and close control portion 117 control driven for opening and closing portion 44 with
Make the cyclic annular decline of gate 43 that closed state is switched to open state.
Then, control unit 100 executes step S03.In step S03, open and close control portion 117 waits carrying arm A3 to wafer
What W was carried out moves in completion.
When carrying arm A3 to wafer W carry out when moving in completion (referring to Fig. 8 (a)), control unit 100 execute step S04.
In step S04, open and close control portion 117 controls driven for opening and closing portion 44 so that open state is switched to and closes by the cyclic annular rising of gate 43
State (referring to (b) of Fig. 8).
Then, control unit 100 executes step S05.In step S05,116 control base board lifting unit 60 of elevating control portion with
It is placed on the decline of lifting unit 61 wafer W in heat treatment portion 50 (referring to (c) of Fig. 8).
Then, control unit 100 executes step S06.In step S06, flow rate information acquisition unit 113 is obtained by multiple flow velocitys
The information for the flow velocity that sensor 71 detects.
Then, control unit 100 executes step S07.In step S07,114 use of temperature profile portion is by flow rate information
The information for the flow velocity that acquisition unit 113 is got and multiple heat-treatment zones are set by related coefficient that coefficient configuration part 111 is set
Temperature Distribution in domain 51.
Then, control unit 100 executes step S08.In step S08, temperature control part 115 is based on by temperature profile
The Temperature Distribution that portion 114 is set is adjusted to control heat treatment portion 50 with the temperature to multiple thermal treatment zones 51.
Then, control unit 100 executes step S09.In step S09, temperature control part 115 is confirmed whether to have passed through regulation
Time.Stipulated time is redefined for that film can be implemented forming the required time being adequately heat-treated.
In the case where being determined as in step S09 without the stipulated time, control unit 100 makes that processing returns to step S06.
After, until by the stipulated time, repeat the detection to the flow velocity of air-flow, temperature corresponding with the flow velocity of air-flow point
The adjusting of cloth.
In the case where being judged to have passed through the stipulated time in step S09, control unit 100 executes step S10.In step
In S10,116 control base board lifting unit 60 of elevating control portion is so that lifting unit 61 rises to rise wafer W from heat treatment portion 50.
Then, control unit 100 executes step S11.In step s 11, open and close control portion 117 control driven for opening and closing portion 44 with
Make the cyclic annular decline of gate 43 that closed state is switched to open state.
Then, control unit 100 executes step S12.In step s 12, open and close control portion 117 waits carrying arm A3 to wafer
What W was carried out moves out completion.
Then, control unit 100 executes step S13.In step s 13, open and close control portion 117 control driven for opening and closing portion 44 with
Increase cyclic annular gate 43 and open state is switched to closed state.By the above, what control unit 100 carried out thermal treatment unit U2
Control process is completed.
(effect of present embodiment)
From the description above, annealing device 20 has: process chamber 31, stores the wafer W as process object；At heat
Reason portion 50 is arranged in process chamber 31, and for supporting wafer W and heating to wafer W, which at least has
The multiple thermal treatment zones 51 arranged in the circumferential direction of wafer W；Air supply opening 35 imports gas into process chamber 31；Exhaust
Mouth 34, is discharged gas out of process chamber 31；Multiple flow sensors 71, in the week for the wafer W that heat treatment portion 50 is supported
Arrangement upwards, for detecting the flow velocity of air-flow；And control unit 100, based on the gas that is detected by multiple flow sensors 71
The corresponding Temperature Distribution of the flow velocity of stream is adjusted to control heat treatment portion 50 with the temperature to multiple thermal treatment zones 51.
In process chamber 31, at the high position of the flow velocity of air-flow between the position low with the flow velocity of air-flow, heat treatment
The case where degree of progress can generate difference, therefore the uniformity for depositing film thickness after heat treatment reduces.Therefore, it is desirable to improve gas
The uniformity of the flow velocity of stream, but air flow method is also subject to processing the influence of all many conditions outside room 31, thus be difficult to control.Therewith
Relatively, in annealing device 20, instead of the control to air flow method, by based on Temperature Distribution corresponding with the flow velocity of air-flow
The temperature of multiple thermal treatment zones 51 is adjusted, the uniformity of film thickness caused by the velocity flow profile because of air-flow is able to suppress
It reduces.It compares with the velocity flow profile of air-flow, Temperature Distribution can be controlled easily, thus if being configured to be based on and gas
The corresponding Temperature Distribution of the flow velocity of stream is adjusted the temperature of multiple thermal treatment zones 51, then can easily suppress because of gas
The uniformity of film thickness caused by the velocity flow profile of stream reduces.In addition, detecting air-flow in real time using multiple flow sensors 71
Velocity flow profile, can correspondingly adjust Temperature Distribution, thus due to transient cause and the flow velocity of air-flow changes over time
In the case where, Temperature Distribution also can be suitably adjusted in view of this, be able to suppress the influence of change in flow.In addition, multiple heat
Processing region 51 and multiple flow sensors 71 are configured in a manner of arranging in the circumferential direction in wafer W.The configuration is suitable for
Inhibit the influence of the velocity flow profile in the circumferential direction of wafer W.The difference of the flow velocity of air-flow has the position in the circumferential direction of wafer W not
The tendency being easy to produce between same position.Therefore, according to the influence of the velocity flow profile in the circumferential direction for being suitable for inhibiting wafer W
Structure can more reliably inhibit the influence of velocity flow profile.Thus, annealing device 20 is for improving film when overlay film formation
Thick uniformity is effective.
Being also possible to wafer W is the wafer W for being applied the treatment fluid of lower membrane formation, and control unit 100 is configured to root
Change the relationship between the flow velocity and Temperature Distribution of the air-flow detected by multiple flow sensors 71 according to the type for the treatment of fluid.?
In this case, the relationship between the velocity flow profile of air-flow and Temperature Distribution is suitably set by the type according to treatment fluid,
Film thickness uniformity caused by the velocity flow profile because of air-flow can be more reliably inhibited to reduce.
It is also possible to the circumferential direction in wafer W, multiple flow sensors 71 are with corresponding with multiple thermal treatment zones 51
Mode configures.In this case, it due to directly detecting the flow velocity of the air-flow in each thermal treatment zone 51, can easily lead
The desired temperature of thermal treatment zone 51 out.
Be also possible to multiple flow sensors 71 be arranged in specific heat processing unit 50 the supportedly position of wafer W in the outer part.
In this case, the air-flow on wafer W will not be able to detect the flow velocity of air-flow because of 71 multilated of flow sensor.
The inner surface of process chamber 31 also may include the opposite upper table of the surface Wa of the wafer W supported with heat treatment portion 50
Face 32 and the circumferential surface 33 for surrounding the wafer W that heat treatment portion 50 is supported, exhaust outlet 34 also can be set in upper surface 32
Centre portion, air supply opening 35 can also be arranged in a manner of surrounding wafer W along circumferential surface 33.In this case, in the circumferential direction of wafer W
On position different parts between be easy to produce air-flow the tendency of difference of flow velocity become more significant, thus multiple heat-treatment zones
The configuration that domain 51 and multiple flow sensors 71 arrange in the circumferential direction of wafer W more efficiently plays a role.
It this concludes the description of embodiment, but the present invention is not necessarily limited to above-mentioned embodiment, is not departing from its purport
In the range of be able to carry out various changes.
For example, as shown in figure 9, being also possible to flow sensor 71A, 71B, 71C, 71D is set to gas supply flow path 46 in ring
The opening portion of the inner circumferential side of shape gate 43.In this case, flow sensor 71A, 71B, 71C, 71D detection is flowed from air supply opening 35
To the flow velocity of the air-flow of exhaust outlet 34.
In addition, as shown in Figure 10, being also possible to relative to the multiple flow sensors 71 arranged in the circumferential direction of wafer W
For, also there is the flow sensor 71 radially arranged in wafer W.It in this case, can be based on the week in addition to wafer W
Temperature Distribution also corresponding with the radially velocity flow profile of wafer W is come to multiple heat treatments except the velocity flow profile of upward air-flow
The temperature in region 51 is adjusted.It is also possible to increase and exist in order to subtly corresponding with the velocity flow profile radially of wafer W
The quantity for the thermal treatment zone 51 of wafer W radially arranged.As an example, in heat treatment portion 50 shown in Figure 11, in Re Chu
The thermal treatment zone of the circumferential array along wafer W has been added between reason region 51E and thermal treatment zone 51A, 51B, 51C, 51D
51F、51G、51H、51I。
The configuration of air supply opening 35 and exhaust outlet 34 is not limited to above content.For example, it can be, by air supply opening 35 with
And circumferential surface 33 is arranged in generate the air-flow traversed in process chamber 31 in the horizontal direction in exhaust outlet 34 this two side.
Detection and the air-flow to the flow velocity of air-flow are not necessarily repeatedly carried out as illustrated in step S06~step S09
The corresponding Temperature Distribution of flow velocity adjusting.In the case that air-flow in process chamber 31 passes through stable at any time, it is also possible to
The flow velocity of air-flow is measured under condition setting in advance and correspondingly sets the temperature point in multiple thermal treatment zones 51
Cloth is adjusted later based on identical Temperature Distribution control heat treatment portion 50 with the temperature to multiple thermal treatment zones 51.?
In this case, being also possible to remove flow sensor 71 after condition is set.
The heat treatment process is not only to heat, and can also be suitable for cooling treatment.That is, being also possible to replace adding
Hot device and be built-in with the coolers such as refrigerant pipe in thermal treatment zone 51.
The heat treatment process can also be used to form the heat of the overlay film (such as etchant resist etc.) other than lower membrane
Processing.
Substrate as process object is not limited to semiconductor crystal wafer, for example, be also possible to glass substrate, mask substrate,
FPD (Flat Panel Display: flat-panel monitor) etc..
Claims (8)
1. a kind of annealing device, has:
Process chamber stores the substrate as process object；
Heat treatment portion is used in the process chamber support the substrate and the substrate is heated or cooled, the heat
Processing unit has the multiple thermal treatment zones arranged in the circumferential direction of the substrate；
Air supply opening imports gas into the process chamber；
Gas is discharged out of described process chamber in exhaust outlet；
Multiple flow sensors arrange in the circumferential direction for the substrate that the heat treatment portion is supported, to detect air-flow
Flow velocity；And
Control unit, based on Temperature Distribution corresponding with the flow velocity of air-flow detected by the multiple flow sensor to control
Heat treatment portion is stated to be adjusted with the temperature to the multiple thermal treatment zone.
2. annealing device according to claim 1, which is characterized in that
The substrate as process object is the substrate for being applied treatment fluid,
The control unit is configured to, and changes the air-flow detected by the multiple flow sensor according to the type of the treatment fluid
Flow velocity and the Temperature Distribution between relationship.
3. annealing device according to claim 1 or 2, which is characterized in that
In the circumferential direction of the substrate, the multiple flow sensor is matched in a manner of corresponding with the multiple thermal treatment zone
It sets.
4. annealing device described according to claim 1~any one of 3, which is characterized in that
The position of the substrate supported than the heat treatment portion in the outer part is arranged in the multiple flow sensor.
5. annealing device described according to claim 1~any one of 4, which is characterized in that
The inner surface of the process chamber include the opposite upper surface in the surface of the substrate supported with the heat treatment portion with
And the circumferential surface of the substrate is surrounded,
The central portion of the upper surface is arranged in the exhaust outlet,
The air supply opening is arranged in a manner of surrounding the substrate along the circumferential surface.
6. a kind of heat treatment method, comprising:
Substrate as process object is moved in process chamber；
By the substrate-placing in the indoor heat treatment portion of processing；
It is controlled based on Temperature Distribution corresponding with the flow velocity of air-flow at the multiple positions arranged in the circumferential direction of the substrate
The heat treatment portion is to be heated or cooled the substrate.
7. heat treatment method according to claim 6, which is characterized in that
The substrate as process object is the substrate for being applied treatment fluid,
Changed between the flow velocity of the air-flow at the multiple position and the Temperature Distribution according to the type of the treatment fluid
Relationship.
8. a kind of computer-readable storage medium, is stored with program, in the program for executing device according to right
It is required that heat treatment method described in 6 or 7.
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| CN110690134A (en) * | 2019-09-12 | 2020-01-14 | 长江存储科技有限责任公司 | Method and device for detecting gas leakage of multi-station deposition process and readable storage medium |
| CN113838767A (en) * | 2020-06-08 | 2021-12-24 | 长鑫存储技术有限公司 | Developing device and developing method |
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| CN116313946B (en) * | 2023-05-24 | 2023-10-17 | 长鑫存储技术有限公司 | Temperature adjusting system and adjusting method |
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| KR102502024B1 (en) | 2023-02-21 |
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| JP2019029450A (en) | 2019-02-21 |
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