JPH11204402A - Heat treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize accurate temperature control with a small number of temperature sensors, by detecting the temperature of a predetermined portion of a heat treatment disk, then estimating the temperature of each portion of the heat treatment disk on the basis of the detected temperature, and controlling the output of each heater so that the temperature of the whole heat treatment disk becomes uniform oh the basis of the estimated temperature of each portion. SOLUTION: A heat treatment disk 58 is formed by five doughnut-shaped regions P1-P5. The regions P1-P5 are concentrically formed with independent heaters H1-H5 arranged within the regions P1-P5, respectively. A sensor S1 and a sensor S2 are mounted in the second region P2 and the fourth region P4 from the outer side of the heat treatment disk 58, respectively, and distribution of temperature of the whole heat treatment disk 58 including the regions P1, P3, and P5 is estimated from temperature detection signals from the sensors S1 and S2 and power-supply signals to the heaters H1-H5. On the basis of the distribution of temperature, the temperature of the whole heat treatment disk 58 is made uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus such as a heating apparatus or a pre-heating apparatus incorporated in a semiconductor manufacturing system for manufacturing a semiconductor device by using, for example, photoengraving technology.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing system using photoengraving technology, various processing units such as a resist coating unit, a drying unit, and a heating unit are incorporated in one system, and the various processing units are sequentially moved. A series of processing is performed while performing this.

FIG. 12 is a vertical sectional view of a typical heat treatment unit 200.

In this heat treatment unit 200, a semiconductor wafer (hereinafter simply referred to as “wafer”) W is placed on a heat treatment board 20.
1, the wafer W is placed on the heat treatment board 201
Heat treatment by the heat released from the This heat treatment board 2
A heating mechanism (not shown) is incorporated in 01, and the heat treatment board 201 is heated by the amount of heat supplied from the heating mechanism. A plurality of small protrusions (not shown) are provided on the upper surface of the heat treatment board 201, and the wafer W is mounted on the tops of these small protrusions. To prevent scratches and dust from adhering to the lower surface. Therefore, a minute gap is formed between the lower surface of the wafer W and the upper surface of the heat treatment plate 201, and heat is supplied from the upper surface of the heat treatment plate 201 to the lower surface of the wafer W via the gas in the gap, for example, nitrogen gas. Since the gas heated by the heat treatment plate 201 and the wafer W has a lower specific gravity than the surrounding lower-temperature air, the heat treatment unit 20
The pressure rises in the inside of the heat treatment plate 201 and is collected by the cover body 202 arranged opposite to the heat treatment board 201 and exhausted through a pipe 204 connected to the top 203 of the cover body 202.

[0005] Incidentally, the wafer W is easily affected by heat, and if the heat treatment temperature exceeds the allowable range, the quality of the product semiconductor is reduced, the yield is reduced, and the manufacturing cost is increased. Therefore, in the heat treatment unit 200 as described above, a temperature sensor such as a thermocouple is inserted into the heat treatment board 201, and the temperature is controlled based on the detected temperature.

[0006]

However, the temperature distribution of the heat treatment board is not always uniform, and it is difficult to accurately grasp the temperature distribution. To ensure accuracy, it is necessary to arrange multiple heaters and arrange temperature sensors for each part and directly measure the temperature of each part. And the structure of the device is complicated.

The present invention has been made in order to solve such a problem, and a heat treatment capable of performing accurate temperature control with a small number of temperature sensors, and furthermore, performing a uniform heat treatment over the entire wafer W. It is intended to provide a device.

Another object of the present invention is to provide a heat treatment apparatus capable of controlling the temperature at the time of heat treatment of a wafer W with high accuracy.

[0009]

According to a first aspect of the present invention, there is provided a heat treatment apparatus comprising: a heat treatment board on which a substrate to be processed is placed; Two or more heaters that heat each region, at least one sensor that detects the temperature of a predetermined portion of the heat treatment panel, and a unit that estimates the temperature of each portion of the heat treatment panel based on the detected temperature, Means for controlling the output of each heater based on the estimated temperature of each part so that the temperature of the entire heat treatment board becomes uniform.

According to a second aspect of the present invention, there is provided a heat treatment apparatus, comprising: a heat treatment plate on which a substrate to be processed is placed; and two or more heaters for heating the heat treatment plate for each of two or more divided areas;
At least one sensor for detecting a temperature of a predetermined portion of the heat treatment panel, and an arithmetic processing unit connected to the sensor and for mathematically estimating a temperature of each portion of the heat treatment panel based on the detected temperature, A control unit connected to the arithmetic processing unit and controlling an output of each heater based on the estimated temperature of each part so that the temperature of the entire heat treatment board becomes uniform.

According to a third aspect of the present invention, there is provided a heat treatment apparatus comprising: a heat treatment board on which a substrate to be processed is placed; and two or more heaters for heating the heat treatment board for each of two or more divided areas;
At least one sensor for detecting the temperature of a predetermined portion of the heat treatment board, and a unit for estimating the amount of heat supplied to each portion of the substrate to be processed, based on the detected temperature, based on the estimated amount of heat Means for controlling the output of each heater so that the amount of heat supplied to the substrate to be processed becomes uniform.

According to a fourth aspect of the present invention, there is provided a heat treatment apparatus comprising: a heat treatment board on which a substrate to be processed is placed; and two or more heaters for heating the heat treatment board for each of two or more divided areas;
At least one sensor for detecting a temperature of a predetermined portion of the heat treatment board, and an operation connected to the sensor and mathematically estimating a heat amount supplied to each portion of the substrate to be processed based on the detected temperature. A control unit that is connected to the processing unit and the arithmetic processing unit and that controls an output of each of the heaters based on the estimated amount of heat supplied to each unit so that the amount of heat supplied to the substrate to be processed is uniform. And a unit.

According to a fifth aspect of the present invention, there is provided a heat treatment apparatus comprising: a heat treatment plate on which a substrate to be processed is mounted; two or more lower heaters for heating the heat treatment plate for each of two or more divided areas; A cover body disposed above and facing the heat treatment board to exhaust the gas heated by the heat treatment board; and a divided concentrically arranged divided surface on the heat treatment board facing surface of the cover body. A plurality of upper heaters, at least one sensor for detecting the temperature of a predetermined portion of the heat treatment panel, and connected to the sensor, and mathematically calculate the temperature of each portion of the heat treatment panel based on the detected temperature. An arithmetic processing unit for estimating, and a control unit connected to the arithmetic processing unit and controlling an output of each of the heaters so that the temperature of the entire heat treatment board becomes uniform based on the estimated temperature of each part, Is provided.

According to a sixth aspect of the present invention, there is provided a heat treatment apparatus comprising: a heat treatment plate on which a substrate to be processed is placed; two or more lower heaters for heating the heat treatment plate for each of two or more divided areas; A cover disposed above and facing the heat treatment panel to exhaust the gas heated by the heat treatment panel; and a divided concentrically disposed divided surface on the heat plate facing surface of the cover body. A plurality of upper heaters, at least one sensor for detecting a temperature of a predetermined portion of the heat treatment board, and the substrate to be connected to the sensor based on the detected temperature and based on the detected temperature. An arithmetic processing unit for mathematically estimating the amount of heat acting on each part, and the arithmetic processing unit connected to the arithmetic processing unit, based on the estimated amount of heat acting on each part, so that the temperature of the substrate to be processed becomes uniform. Of each heater Comprising a control unit for controlling the force, the.

A heat treatment apparatus according to a seventh aspect of the present invention is the heat treatment apparatus according to any one of the first to seventh aspects, wherein each heater disposed on the heat treatment panel is disposed concentrically. And the sensors are arranged in a line in the radial direction of the heat treatment board.

The heat treatment apparatus according to the present invention according to claim 8 is the heat treatment apparatus according to any one of claims 1 to 6, wherein each heater disposed on the heat treatment board is disposed concentrically. The sensor is provided in the thickness direction of the heat treatment board.

A heat treatment apparatus according to a ninth aspect of the present invention is the heat treatment apparatus according to any one of the first to sixth aspects, wherein each heater arranged on the heat treatment board is arranged concentrically. And the sensors are arranged in a row in the radial direction of the heat treatment board and in the thickness direction.

In the heat treatment apparatus of the first aspect, a heater is provided in each of two or more regions formed by dividing the heat treatment board, and a sensor is provided in a predetermined portion of the heat treatment board. Since the temperature of each part of the heat treatment board is estimated based on the detected temperature, accurate temperature management can be performed with a small number of sensors.

Further, since the outputs of the heaters are controlled so that the temperature of the entire heat treatment board becomes uniform based on the estimated temperature, uniform heat treatment can be performed over the entire substrate to be processed. .

According to the heat treatment apparatus of the second aspect, similar to the heat treatment apparatus of the first aspect, accurate temperature control can be performed with a small number of sensors, uniform heat treatment can be performed over the entire substrate to be processed, and an arithmetic processing unit can be provided. Thus, the temperature of each part of the heat treatment board is mathematically estimated based on the detected temperature, so that the temperature control at the time of heat treatment of the substrate to be processed can be performed with high accuracy.

According to a third aspect of the present invention, a heater is provided in each of two or more areas of the heat treatment board, and a sensor is provided in a predetermined portion of the heat treatment board. Thus, since the amount of heat supplied to each part of the substrate to be processed is estimated, accurate temperature management can be performed with a small number of sensors.

Further, since the outputs of the heaters are controlled based on the estimated temperature so that the amount of heat supplied to the substrate to be processed becomes uniform, uniform heat treatment is performed over the entire substrate to be processed. be able to.

According to the heat treatment apparatus of the fourth aspect, similar to the heat treatment apparatus of the third aspect, accurate temperature control can be performed with a small number of sensors, uniform heat treatment can be performed over the entire substrate to be processed, and an arithmetic processing unit can be provided. Thus, based on the detected temperature, the amount of heat supplied to each part of the substrate to be processed is mathematically estimated, so that the temperature control when heat-treating the substrate to be processed is performed with high accuracy. Can be.

In the heat treatment apparatus of the present invention, the lower heater is provided in each of two or more regions formed by dividing the heat treatment board, and a sensor is provided in a predetermined portion of the heat treatment board. Since the temperature of each part of the heat treatment board is estimated based on the temperature detected in the above, accurate temperature management can be performed with a small number of sensors.

Further, since the outputs of the lower heater and the upper heater are controlled based on the estimated temperature so that the temperature of the entire heat treatment board becomes uniform, uniform heat treatment is performed over the entire substrate to be processed. be able to.

Further, it is possible to set the temperature of the upper heater to a higher temperature than the lower heater, and to control the lower heater and the upper heater so as to cancel the thermal imbalance. Temperature control during heat treatment can be performed with high accuracy.

In the heat treatment apparatus of the present invention, a lower heater is provided in each of two or more regions formed by dividing the heat treatment board, and a sensor is provided in a predetermined portion of the heat treatment board. Since the amount of heat supplied to each part of the substrate to be processed is estimated based on the temperature detected in the above, accurate temperature management can be performed with a small number of sensors.

Further, since the outputs of the lower heater and the upper heater are controlled so that the amount of heat supplied to the substrate to be processed is uniform based on the estimated temperature, the uniformity is obtained over the entire substrate to be processed. Heat treatment can be performed.

Further, it is possible to set the temperature of the upper heater side to a higher temperature with respect to the lower heater, and to control the lower heater and the upper heater so as to cancel the thermal imbalance. Temperature control during heat treatment can be performed with high accuracy.

According to the heat treatment apparatus of claim 7, the heat treatment apparatus of claims 1 to 6
In the heat treatment apparatus according to any one of the above, since the heaters arranged on the heat treatment board are arranged concentrically, it is possible to perform fine temperature control in the radial direction of the heat treatment board where thermal uneven distribution is likely to occur, A uniform heat treatment can be performed over the entire substrate to be processed. Further, temperature control when heat-treating the substrate to be processed can be performed with high accuracy.

Further, since the sensors are arranged in a line in the radial direction of the heat treatment board, the temperature can be accurately controlled with a small number of sensors.

[0032] In the heat treatment apparatus of claim 8, claims 1 to 6
In the heat treatment apparatus according to any one of the above, since the heaters arranged on the heat treatment board are arranged concentrically, it is possible to perform fine temperature control in the radial direction of the heat treatment board where thermal uneven distribution is likely to occur, A uniform heat treatment can be performed over the entire substrate to be processed. Further, temperature control when heat-treating the substrate to be processed can be performed with high accuracy.

Further, since the sensor is disposed in the thickness direction of the heat treatment board, it is easy to correct a time lag in the thickness direction due to the propagation of heat, and it is possible to control the heat treatment time and to perform heat treatment on the substrate to be processed. Temperature control can be performed with high accuracy.

In the heat treatment apparatus according to the ninth aspect,
In the heat treatment apparatus according to any one of the above, since the heaters arranged on the heat treatment board are arranged concentrically, it is possible to perform fine temperature control in the radial direction of the heat treatment board where thermal uneven distribution is likely to occur, A uniform heat treatment can be performed over the entire substrate to be processed. Further, temperature control when heat-treating the substrate to be processed can be performed with high accuracy.

Further, since the sensors are arranged in a line in the radial direction of the heat treatment board, the temperature can be accurately controlled with a small number of sensors.

Further, since the sensor is also provided in the thickness direction of the heat treatment board, it is easy to correct the time lag in the thickness direction due to the propagation of heat. Temperature control can be performed with high accuracy.

[0037]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows a semiconductor wafer (hereinafter, referred to as a COT) provided with a resist coating unit (COT) according to an embodiment of the present invention.
FIG. 1 is a plan view showing the entire coating and developing processing system 1 of “wafer”).

In the coating and developing treatment system 1, a plurality of wafers W as objects to be processed are loaded into and unloaded from the system in units of, for example, 25 wafer cassettes CR, or the wafers W are transferred to and from the wafer cassette CR. A cassette station 10 for loading and unloading, a processing station 11 in which various single-wafer processing units for performing predetermined processing on the wafers W one by one in a coating and developing process are arranged at predetermined positions in multiple stages, and An interface unit 12 for transferring a wafer W to and from an exposure apparatus (not shown) provided adjacent to the processing station 11 is integrally connected. In this cassette station 10,
At the position of the positioning projection 20a on the cassette mounting table 20,
A plurality of, for example, up to four wafer cassettes CR are placed in a line in the X direction (vertical direction in FIG. 1) with their respective wafer entrances facing the processing station 11 side. The wafer carrier 21 that can move in the wafer arrangement direction (Z direction; vertical direction) of the wafers W stored in the wafer CR selectively accesses each wafer cassette CR.

The wafer transfer body 21 is rotatable in the θ direction, and is moved to the third position on the processing station 11 side as described later.
Access to the processing unit group G ₃ of the multi-stage unit section disposed in the alignment unit (ALIM) and an extension unit (EXT).

The processing station 11 is provided with a vertical transfer type main wafer transfer mechanism 22 equipped with a wafer transfer device, around which all processing units are arranged in one or more sets in multiple stages. ing.

FIG. 2 is a front view of the coating and developing system 1.

In the first processing unit group G ₁ , the cup C
Two spinner type processing units, for example, a resist coating unit (COT) and a developing unit (DEV), which perform a predetermined process by placing the wafer W on the spin chuck in the P, are stacked in two stages from the bottom. In the second processing unit group G _2, two spinner-type processing units, for example, the resist coating unit (COT) and a developing unit (D
EV) are stacked in two stages in order from the bottom. These resist coating units (COT) are preferably arranged in the lower stage as described above because drainage of the resist solution is troublesome both mechanically and in terms of maintenance. However, it is of course possible to appropriately arrange the upper stage as needed.

FIG. 3 is a rear view of the coating and developing system 1.

In the main wafer transfer mechanism 22, the cylindrical support 4
9, the wafer transfer device 46 is moved vertically (in the Z direction).
It can be moved up and down freely. The cylindrical support 49 is connected to a rotation shaft of a motor (not shown), and is rotated integrally with the wafer transfer device 46 about the rotation shaft by the rotation driving force of the motor, whereby the wafer transfer is performed. The device 46 is rotatable in the θ direction. Note that the cylindrical support 49 may be configured to be connected to another rotating shaft (not shown) rotated by the motor. The wafer transfer device 46 is provided with a plurality of holding members 48 movable in the front-rear direction of the transfer base 47, and these holding members 48 enable the transfer of the wafer W between the processing units. ing.

As shown in FIG. 1, the coating and developing system 1 has five processing unit groups G ₁ , G ₂ , G
₃ , G ₄ , G ₅ can be arranged, and the multi-stage units of the first and second processing unit groups G ₁ , G ₂ are arranged on the system front (front side in FIG. 1) side, and the third processing unit multistage unit group G ₃ are cassette station 10
, And the multi-stage unit of the _fourth processing unit group G ₄ is disposed adjacent to the interface unit 12,
Multistage unit of the fifth processing unit group G ₅ is capable of being disposed on the rear side.

As shown in FIG. 3, in the third processing unit group G ₃ , an oven-type processing unit for performing a predetermined process by placing the wafer W on a holding table (not shown), for example, a cooling system for performing a cooling process Unit (COL), adhesion unit (AD) for performing so-called hydrophobic treatment for improving the fixability of resist, alignment unit (ALIM) for positioning, extension unit (EXT), heat treatment before exposure processing Prebaking unit (PREBAKE) for performing heat treatment and postbaking unit (POBAKE) for performing heat treatment after exposure processing
Are, for example, stacked in eight stages from the bottom. Even the fourth processing unit group G _4, oven-type processing units, for example, a cooling unit (COL), an extension and cooling unit (EXTCOL), extension unit (EXT), a cooling unit Bok (CO
L), a pre-baking unit (PREBAKE) and a post-baking unit (POBAKE) are stacked in order from the bottom, for example, in eight stages.

As described above, the cooling unit (COL) and the extension cooling unit (EXTCOL) having a low processing temperature are arranged in the lower stage, and the pre-baking unit (PREBAKE), the post-baking unit (POBAKE) and the ad-hoc unit having a high processing temperature are arranged. By arranging the John units (AD) in the upper stage, thermal mutual interference between the units can be reduced. Of course, a random multi-stage arrangement may be used.

As shown in FIG. 1, the interface unit 12
In the depth direction (X direction), the processing station 11
But has a smaller size in the width direction (Y direction). A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface unit 12, while a peripheral exposure device 23 is arranged at the rear, and a central exposure unit is further arranged at the center. Is provided with a wafer carrier 24. This wafer carrier 24
Moves in the X and Z directions to access both cassettes CR and BR and the peripheral exposure device 23.

The wafer transfer body 24 is also rotatable in the θ direction, and includes an extension unit (EXT) provided in the multi-stage unit of the fourth processing unit group G ₄ on the processing station 11 side and an adjacent exposure unit. The wafer delivery table (not shown) on the apparatus side can also be accessed.

In the coating and developing system 1, the multi-stage unit of the _fifth processing unit group G5 shown by the broken line in FIG. 1 can be arranged on the back side of the main wafer transfer mechanism 22 as described above. The multi-stage unit of the _fifth processing unit group G ₅ is movable in the Y direction along the guide rail 25.
Therefore, even when provided as a multi-stage unit of the fifth processing unit group G ₅ shown, by moving along the guide rail 25, the space portion can be secured, to the main wafer transfer mechanism 22 Maintenance work can be easily performed from behind.

Next, referring to FIGS. 4 and 5, the baking unit (PREBA) included in the multistage units of the third and fourth sets G ₃ and G _{4 at} the processing station 11 will be described.
KE), (POBAKE), cooling unit (CO
L) and the configuration and operation of the heat treatment unit such as (EXTCOL) will be described.

FIGS. 4 and 5 are a plan view and a sectional view, respectively, showing the structure of the heat treatment unit according to this embodiment. In FIG. 5, the horizontal shielding plate 55 is omitted for illustration. The processing chamber 50 of this heat treatment unit has both side walls 53.
And a horizontal shielding plate 55, and the front side (the main wafer transfer mechanism 24 side) and the rear side of the processing chamber 50 are formed with openings 50A and 50B, respectively. A circular opening 56 is formed at the center of the shielding plate 55, and a disc-shaped heat treatment plate 58 is provided in the opening 56 as a mounting table on which the wafer W is set.

The heat treatment board 58 is provided with, for example, three holes 60, and a support pin 62 is inserted in each hole 60 in a loose fit state, and each of the indication pins 62 is loaded and unloaded when the semiconductor wafer W is loaded. The wafer W is projected or raised above the surface of the heat treatment board 58 to transfer the wafer W to and from the holding member 48 of the main wafer transfer mechanism 22.

On the outer periphery of the heat treatment board 58, there is provided a shutter 66 made of a ring-shaped strip having a large number of ventilation holes 64 formed at intervals of 2 ° in the circumferential direction. The shutter 66 is normally retracted to a position below the heat treatment plate 58, but rises to a position higher than the upper surface of the heat treatment plate 58 during the heat treatment as shown in FIG.
A ring-shaped side wall is formed between the cover and the cover body 68 so that a downflow inert gas, for example, a nitrogen gas sent from a gas supply system (not shown) is allowed to uniformly flow in the circumferential direction from the vent hole 64. I have.

An exhaust port 6 for exhausting gas generated from the surface of the wafer W during the heating process is provided at the center of the cover body 68.
8a is provided, and an exhaust pipe 70 is connected to the exhaust port 68a. The exhaust pipe 70 communicates with a duct 53 (or 54) on the front side of the apparatus (on the main wafer transfer mechanism 22 side) or a duct (not shown).

Under the shielding plate 55, a machine room 74 is formed by the shielding plate 55, the side walls 53 and the bottom plate 72, and a heat treatment board support plate 76, a shutter arm 7
8, a support pin arm 80, a shutter arm vertical drive cylinder 82, and a support pin arm vertical drive cylinder 84 are provided.

As shown in FIG. 4, a plurality of, for example, four wafer W guide support projections 86 are provided on the surface of the heat treatment board 58 on which the outer peripheral edge of the wafer W is to be placed.

A plurality of small projections (not shown) are provided on the wafer W mounting portion on the upper surface of the heat treatment board 58, and the lower surface of the wafer W is mounted on the top of these small projections. Therefore, a minute gap is formed between the lower surface of the wafer W and the upper surface of the heat treatment plate 58, and the lower surface of the wafer W is prevented from directly contacting the upper surface of the heat treatment plate 58. It is not damaged or damaged.

As will be described later, a plurality of heaters are provided inside the heat treatment board 58, and the heat treatment board 58 is maintained at a predetermined temperature by generating heat from these heaters.

FIG. 6 is a plan view schematically illustrating the structure of the heat treatment board 58 according to the present embodiment, and FIG.
8 is a vertical sectional view schematically depicting the structure of FIG.

As shown in FIG. 6, the heat treatment board 58 is formed from five donut-shaped regions P1 to P5. These regions P1 to P5 are formed concentrically, and P
Independent heaters H1 to H5 are provided inside 1 to P5, respectively.
5, for example, a nichrome wire heater (not shown) formed in the same donut shape as each of the regions P1 to P5 is provided. These heaters are wired independently of each other,
The amount of heat supplied to each of the regions P1 to P5 can be controlled independently.

In the second area P2 and the fourth area P4 from the outside of the heat treatment board 58, a hole for mounting a sensor is formed in a vertical direction.
The sensor 1 and the sensor S2 are attached to face each other in the vertical direction. These sensors S1 and S2 are connected to the heat treatment board 58.
In order to detect the horizontal temperature distribution. Further, two horizontal holes are formed in the upper and lower portions in parallel from the right side surface in FIG. 6 of the heat treatment board 58, and penetrate the area P1 and reach halfway of the area P2.

As shown in FIGS. 6 and 7, sensors S3 and S4 are also mounted in these holes. These sensors S3 and S4 are for detecting the temperature distribution in the vertical direction of the heat treatment board 58.

FIG. 8 is a block diagram illustrating a control system of the heat treatment unit according to the present embodiment. As shown in FIG. 8, heaters H1 to H5 are disposed inside the regions P1 to P5 of the heat treatment board 58, respectively. These heaters H1 to H5 are connected to a control device 90, and the output of the heaters H1 to H5 is controlled by the control device 90. The sensors S1 to S4 are also connected to the control device 90,
The temperature of each part of the heat treatment panel 58 is recognized by the control device 90.

Next, a method of controlling the heat treatment unit according to this embodiment will be described.

In the heat treatment unit according to this embodiment, the temperature of a predetermined portion of the heat treatment panel 58 is detected, and the temperature distribution of the entire heat treatment panel 58 is estimated from the detected temperature. Then, based on the estimation result, the outputs of the heaters H1 to H5 are controlled so as to eliminate thermal uneven distribution.

Specifically, the temperature distribution in the horizontal direction of the heat treatment panel 58 is detected by the sensor S1 disposed in the second area P2 from the outside of the heat treatment panel 58 and the sensor S2 disposed in the fourth area P4. The temperature distribution of the entire heat treatment board is estimated from the temperature thus obtained.

For example, when the same power is supplied to the heaters H1 to H5, the temperature of the heat treatment panel 58 tends to be the lowest in the region P1, and the temperature rises toward the inside of the regions P2, P3,. When the temperature is the highest, the correspondence between the regions P2 and P4 where the sensors S1 and S2 are arranged and the temperatures of the other regions P1, P3 and P5 is determined from the measured values and the theoretical values. If the temperatures of the sensors S1 and S2 and the power supplied to the heaters H1 to H5 are specified, the areas P1 and P
A table that can specify each temperature of P3 and P5 is created and stored in the storage element of the control device.

Similarly, a similar table is prepared for the case where the power supplied to the heaters H1 to H5 is changed.
By specifying the temperatures of the sensors S1 and S2 and the powers supplied to the heaters H1 to H5, the temperatures of the regions P1, P3, and P5 can be specified.

In this manner, the temperature distribution of the entire heat treatment board 58 including the regions P1, P3, and P5 is estimated from the temperature detection signals from the sensors S1 and S2 and the power supply signals to the heaters H1 to H5.

Next, based on the estimated temperature distribution of the entire heat treatment panel 58, the electric power supplied to each of the heaters H1 to H5 is adjusted to adjust the heaters H1 to H5 so that the entire heat treatment panel 58 has a uniform temperature. Control the output of

Specifically, the power supplied to each heater is adjusted based on the table described above, and the outputs of the heaters H1 to H5 are controlled so that the areas P1 to P5 are uniform.

For example, as described above, when the temperature is the lowest in the region P1, and the temperature is higher inside the regions P2, P3,... And becomes the highest in the region P5, such thermal uneven distribution is eliminated. The outputs of the heaters H1 to H5 are controlled. That is, the output of the heater H1 is increased, the output of the heater H5 is decreased, and the outputs of the heaters H2 to H4 sandwiched therebetween are inclined so as to be continuously connected from the heater H1 to the heater H5. These output values of H1 to H5 are also determined based on the above-described table using the temperatures of the regions P2 and P4 as indices.

In the heat treatment unit according to this embodiment, two sensors S3 and S
4 are arranged. Then, based on the temperatures detected by these sensors S3 and S4, the temperature distribution in the vertical direction of the entire heat treatment panel 58 is estimated, and the temperature of the heat treatment panel 58 is managed.

Specifically, the temperature in the vertical direction of the area P2 is detected by the sensors S3 and S4. On the other hand, the correspondence between the detected temperatures of the sensors S3 and S4 and the temperature distribution in the vertical direction of each of the regions P1 to P5 of the heat treatment board 58, and H1 to H
The relationship with the output of each heater of No. 5 is obtained in advance from the measured value or the theoretical calculation value, and stored in the storage unit of the control device in the same manner as described above.

Then, the heat treatment board 58 is used as an index with the temperatures at the two upper and lower portions of the area P2 detected by the sensors S3 and S4.
Estimate the surface temperature distribution. That is, the temperature near the surface of the other areas P1 and P3 to P5 is estimated from the temperature of the area P2 detected by the sensors S3 and S4 using the above-described table. When the surface temperatures of these regions P1 to P5 are not uniform, the outputs of the heaters H1 to H5 are controlled using the above-mentioned table so that the surface of the heat treatment board 58 has a uniform and appropriate temperature. Adjust.

Next, this heat treatment unit is combined with a baking unit (PREBAKE) and a cooling unit (C
The operation when using as (OL) will be described below.

First, wafer W is taken out of wafer cassette CR set on mounting table 20 by wafer carrier 21, and then wafer W is delivered from wafer carrier 21 to main wafer carrier 22. The main wafer transfer mechanism 22 transfers the received wafer W to a resist coating unit (C
The wafer W is transferred and set in the OT), and the resist is applied to the wafer W here. Next, the main wafer transfer mechanism 22 takes out the wafer W from the inside of the resist coating unit (COT), transfers the wafer W to the inside of the heat treatment unit, and sets the wafer W on the heat treatment board 58.

On the other hand, at the same time when the power to the heat treatment unit is turned on, the power is turned on to the heaters H1 to H5 in the heat treatment panel 58 to start heating. When a predetermined time has elapsed and the temperature of the heat treatment panel 58 has stabilized, the control device 90 operates to activate the heater H.
Adjust the output of 1-H5. That is, the sensors S1 and S2 disposed in the regions P2 and P4 control the temperature of the heat treatment panel 58 in the horizontal direction, and control the heat treatment panel 58 to maintain an appropriate and uniform temperature.

For example, if the temperature is low in the region P1,
In the case where the temperature is higher in the inner region and the highest temperature in the region P5, the output of the heater H1 is increased and H2, H
The output decreases as the position becomes closer to 3, and the output of the heater H5 is minimized.

On the other hand, when the temperature is high in the region P1, P2, P
In the case where the temperature is lower in the inner region and the temperature is lowest in the region P5, the output of the heater H1 is reduced to H2 and H2.
The output is increased toward the inside with 3 and the output of the heater H5 is maximized.

Similarly, the temperature is low in the regions P1 and P5,
When the temperature is high in the regions P2 to P4, the heaters H1 and H5
Is increased, while the outputs of the heaters H2 to H4 are decreased. Here, as for the output value of each heater in each of the above cases, the most appropriate value is obtained based on the above-mentioned table, and adjusted to this value.

The temperature distribution in the vertical direction of the heat treatment panel 58 is similarly estimated based on the temperatures detected from the sensors S3 and S4 and the above-mentioned table, and the entire surface of the heat treatment panel 58 is estimated. The outputs of the heaters H1 to H5 are controlled so that the temperature becomes appropriate and uniform.

In this embodiment, the temperature of the heat treatment panel 58 is controlled only by adjusting the outputs of the heaters H1 to H5. However, other methods, for example, nitrogen gas from the side of the heat treatment panel 58 may be used. It is also possible to control the temperature of the heat treatment panel 58 by adjusting the gas flow rate of a gas supply system that supplies such a gas.

As described above, in the heat treatment unit according to the present embodiment, the heat treatment board is divided into a plurality of areas and the heaters are provided for each area, while the sensors for detecting the temperature of the heat treatment board are provided only at predetermined portions. It was arranged. On the other hand, the thermal correspondence between the part where the sensor is disposed and the other part of the heat treatment panel regarding the heat propagation state is obtained from the measured value or the theoretical value and stored in the storage unit of the control device. In order to actually perform the temperature control of the heat treatment board, the temperature is actually detected by a sensor for the predetermined portion, and the other portions are estimated and obtained from the data of the thermal correspondence stored in the storage section. .

As a result of this estimation, when it is expected that the surface temperature of the heat treatment board becomes non-uniform, the output of the heater is controlled based on the above data so that the temperature of the heat treatment board becomes proper and uniform. Adjust.

As described above, in the heat treatment unit according to the present embodiment, the sensors are provided only at predetermined portions of the heat treatment panel, and the temperature distribution of other portions is calculated by a mathematical method using measured values or theoretical values. Since it is configured to estimate,
The temperature of the heat treatment panel can be controlled with a small number of sensors for a plurality of heaters.

Further, in the heat treatment unit according to the present embodiment, when there is a possibility that the temperature distribution of the heat treatment board may be unevenly distributed based on the above-described estimated result, the heater is determined based on the data of the thermal correspondence. Since the output is controlled and the temperature is adjusted so as to eliminate the thermal uneven distribution, the temperature can be controlled with high accuracy.

The present invention is not limited to the contents of the above embodiment.

For example, in the above embodiment, the temperature distribution of the entire heat treatment board is estimated from the temperature detected for a predetermined portion of the heat treatment board, but the amount of heat acting on the wafer W placed on the heat treatment board is further estimated. It is also possible to control the heater so as to make the amount of heat acting on the wafer W uniform.

Further, in the above embodiment, the heat treatment plate is described as an example in which the heat treatment plate is divided into a plurality of regions concentrically and a doughnut-shaped heater is built in each region. It is also possible to use one having various shapes such as a divided heater or a sector heater.

The number of sensors may be one provided with only one sensor, or one provided with the same number of heaters or more.

Further, in the above embodiment, the coating and developing system 1 for the wafer W has been described as an example. However, it is needless to say that the present invention can be applied to other processing apparatuses, for example, an LCD substrate processing apparatus. No.

Next, a second embodiment according to the present invention will be described.

Note that the description of the same parts as those in the first embodiment will be omitted. FIG. 9 is a vertical sectional view of the heat treatment panel 158 and the cover 168 in the heat treatment unit according to the present embodiment, and FIG. 10 is a plan view showing the cover 168 viewed from below.

As shown in FIG. 9, the cover 168
Fan-shaped upper heaters h1 to h20 are disposed on a conical wall surface 168b formed on the lower surface side of the fan. As shown in FIG. 10, these upper heaters h1 to h20 are
8b are arranged such that five large and small concentric circles are each divided into four.

FIG. 11 is a block diagram showing a heating system of the heat treatment unit according to this embodiment. As shown in FIG. 11, each of the upper heaters h1 to h20 is independently wired, and the control device 1 to which each is connected is connected.
90 controls the operation and the amount of heat generated.

The heat treatment unit according to the present embodiment includes a heat treatment plate 158 having exactly the same structure as the heat treatment plate 58 according to the first embodiment, and a cover body 168 provided with upper heaters h1 to h20. I have.

In this heat treatment unit, heat treatment board 158
Sensors S11 and S1 disposed in the regions P12 and P14 of FIG.
2 and the temperatures of the regions P11 and P12 and the heaters H1
From the outputs of 1 to H15, it is determined whether or not the temperature distribution of the heat treatment board is appropriate and uniform.

That is, similarly to the first embodiment, the temperature distribution of the entire heat treatment panel 158 is estimated from the thermal correspondence between the respective regions of the heat treatment panel stored in the storage section of the control device 190 in advance. It is determined whether the state of the temperature distribution is appropriate or not.

If it is determined that the temperature distribution is inappropriate and there is a thermal uneven distribution, the heaters H11 to H15 are controlled so as to cancel the thermal uneven distribution. At the same time, upper heaters h1 to h disposed on the lower surface of the cover body 168.
The calorific value of 20 is also controlled and adjusted so as to eliminate the thermal uneven distribution.

For example, when the temperature of the outer peripheral edge of the heat treatment board is low, the amount of heat generated by the upper heaters h17 to h20 on the outer peripheral edge is increased. , The uniform heat treatment of the wafer W can be achieved.

When the cover 168 according to the present embodiment is employed, the heat value of the heat
Is controlled so as to be slightly lower than the heat treatment temperature of the wafer W, and the heat generation amount of the upper heaters h1 to h20 is controlled so as to be higher than the heat treatment temperature of the wafer W, so that the temperature rises from low to high in the vertical direction. It is preferable to perform the heat treatment in such a manner that the gradient is formed, since the heat convection does not occur in the upper portion near the center of the wafer W and the control of the heat treatment temperature becomes easy, which is unique to the present embodiment.

[0105]

As described above in detail, according to the first aspect of the present invention, the heater is provided in each of the two or more regions formed by dividing the heat treatment board, while the heat treatment board is provided with the heater. Since a sensor is provided at a predetermined portion and the temperature of each portion of the heat treatment panel is estimated based on the temperature detected by the sensor, accurate temperature management can be performed with a small number of sensors.

Further, since the outputs of the respective heaters are controlled based on the estimated temperature so that the temperature of the entire heat treatment board becomes uniform, uniform heat treatment can be performed over the entire substrate to be processed. .

According to the second aspect of the present invention, a first aspect is provided.
In addition to being able to perform accurate temperature management with a small number of sensors as in the heat treatment apparatus and performing a uniform heat treatment over the entire substrate to be processed, the arithmetic processing unit allows the heat treatment panel to be controlled based on the detected temperature. Since the temperature of each part is mathematically estimated, the temperature control when heat-treating the substrate to be processed can be performed with high accuracy.

According to the third aspect of the present invention, a heater is provided in each of two or more regions of the heat treatment board, and a sensor is provided in a predetermined portion of the heat treatment board, and the sensor detects the heat. Since the amount of heat supplied to each portion of the substrate to be processed is estimated based on the temperature, accurate temperature management can be performed with a small number of sensors.

Further, since the outputs of the heaters are controlled so that the amount of heat supplied to the substrate to be processed is uniform based on the estimated temperature, a uniform heat treatment is performed over the entire substrate to be processed. be able to.

According to the present invention described in claim 4, according to claim 3,
In addition to being able to perform accurate temperature management with a small number of sensors as in the heat treatment apparatus of the present invention and performing a uniform heat treatment over the entire substrate to be processed, the processing unit based on the detected temperature is used by an arithmetic processing unit. Since the amount of heat supplied to each part is mathematically estimated, the temperature control during the heat treatment of the substrate to be processed can be performed with high accuracy.

According to the fifth aspect of the present invention, a lower heater is provided in each of two or more regions formed by dividing the heat treatment board, and a sensor is provided in a predetermined portion of the heat treatment board. Since the temperature of each part of the heat treatment panel is estimated based on the temperature detected by this sensor, accurate temperature management can be performed with a small number of sensors.

Since the outputs of the lower heater and the upper heater are controlled based on the estimated temperature so that the temperature of the entire heat treatment board becomes uniform, uniform heat treatment is performed on the entire substrate to be processed. be able to.

Further, it is possible to set the temperature of the upper heater side to a higher temperature than the lower heater, and to control the lower heater and the upper heater so as to cancel the thermal imbalance. Temperature control during heat treatment can be performed with high accuracy.

According to the present invention, a lower heater is provided in each of two or more regions formed by dividing the heat treatment board, and a sensor is provided in a predetermined portion of the heat treatment board. Since the amount of heat supplied to each part of the substrate to be processed is estimated based on the temperature detected by this sensor, accurate temperature management can be performed with a small number of sensors.

Further, since the outputs of the lower heater and the upper heater are controlled based on the estimated temperature so that the amount of heat supplied to the substrate to be processed is uniform, the uniformity is obtained over the entire substrate to be processed. Heat treatment can be performed.

Further, it is possible to set the temperature of the upper heater side to a higher temperature than the lower heater, and to control the lower heater and the upper heater so as to cancel the thermal imbalance. Temperature control during heat treatment can be performed with high accuracy.

According to the seventh aspect of the present invention, the first aspect is provided.
In the heat treatment apparatus of any one of the above-described items 6, since the heaters arranged on the heat treatment board are arranged concentrically, fine temperature control can be performed in the radial direction of the heat treatment board where thermal uneven distribution easily occurs. Thus, a uniform heat treatment can be performed over the entire substrate to be processed. Further, temperature control when heat-treating the substrate to be processed can be performed with high accuracy.

Further, since the sensors are arranged in a line in the radial direction of the heat treatment board, the temperature can be accurately controlled with a small number of sensors.

According to the present invention described in claim 8, according to claim 1,
In the heat treatment apparatus of any one of the above-described items 6, since the heaters arranged on the heat treatment board are arranged concentrically, fine temperature control can be performed in the radial direction of the heat treatment board where thermal uneven distribution easily occurs. Thus, a uniform heat treatment can be performed over the entire substrate to be processed. Further, temperature control when heat-treating the substrate to be processed can be performed with high accuracy.

Further, since the sensors are arranged in the thickness direction of the heat treatment board, it is easy to correct the time lag in the thickness direction due to the propagation of heat, so that the heat treatment time can be controlled and the heat treatment of the substrate to be processed can be prevented. Temperature control can be performed with high accuracy.

According to the ninth aspect of the present invention, a first aspect is provided.
In the heat treatment apparatus of any one of the above-described items 6, since the heaters arranged on the heat treatment board are arranged concentrically, fine temperature control can be performed in the radial direction of the heat treatment board where thermal uneven distribution easily occurs. Thus, a uniform heat treatment can be performed over the entire substrate to be processed. Further, temperature control when heat-treating the substrate to be processed can be performed with high accuracy.

Further, since the sensors are arranged in a line in the radial direction of the heat treatment board, the temperature can be controlled accurately with a small number of sensors.

Further, since the sensors are also provided in the thickness direction of the heat treatment board, it is easy to correct the time lag in the thickness direction due to the propagation of heat. Temperature control can be performed with high accuracy.

[Brief description of the drawings]

FIG. 1 is a plan view showing the overall configuration of a coating and developing processing system according to an embodiment of the present invention.

FIG. 2 is a front view of the coating and developing system according to the embodiment of the present invention.

FIG. 3 is a rear view of the coating and developing processing system according to the embodiment of the present invention.

FIG. 4 is a plan view showing a configuration of a heat treatment unit according to the embodiment of the present invention.

FIG. 5 is a sectional view of a heat treatment unit according to the embodiment of the present invention.

FIG. 6 is a plan view of a heat treatment board according to the embodiment of the present invention.

FIG. 7 is a vertical sectional view of a heat treatment board according to the embodiment of the present invention.

FIG. 8 is a block diagram illustrating a control system of the heat treatment unit according to the embodiment of the present invention.

FIG. 9 is a vertical sectional view of a heat treatment unit according to another embodiment of the present invention.

FIG. 10 is a block diagram illustrating a control system of a heat treatment unit according to another embodiment of the present invention.

FIG. 11 is a plan view showing a cover according to another embodiment of the present invention as viewed from below.

FIG. 12 is a vertical sectional view of a conventional heat treatment unit.

[Explanation of symbols]

 W wafer 58 heat treatment board H1 to H12 heater S1 to S4 sensor 90 control device 68 cover body

Claims (9)

[Claims] 1. A heat treatment board on which a substrate to be processed is placed, two or more heaters for heating the heat treatment board for each of two or more divided areas, and at least a temperature for detecting a temperature of a predetermined portion of the heat treatment board. One sensor, means for estimating the temperature of each part of the heat treatment panel based on the detected temperature, and based on the estimated temperature of each part, so that the temperature of the entire heat treatment panel becomes uniform. And a means for controlling the output of each of the heaters. 2. A heat treatment board on which a substrate to be processed is mounted, two or more heaters for heating the heat treatment board for each of two or more divided areas, and at least a temperature for detecting a temperature of a predetermined portion of the heat treatment board. One sensor, connected to the sensor, based on the detected temperature,
An arithmetic processing unit for mathematically estimating the temperature of each part of the heat treatment panel; connected to the arithmetic processing unit, based on the estimated temperature of each part, so that the temperature of the entire heat treatment panel becomes uniform. And a controller for controlling the output of each of the heaters. 3. A heat treatment board on which a substrate to be processed is mounted, two or more heaters for heating the heat treatment board for each of two or more divided areas, and at least detecting a temperature of a predetermined portion of the heat treatment board. One sensor, a unit for estimating the amount of heat to be supplied to each part of the substrate to be processed based on the detected temperature, and the amount of heat supplied to the substrate to be processed is uniform based on the estimated amount of heat. Means for controlling the output of each of the heaters such that: 4. A heat treatment board on which a substrate to be processed is mounted, two or more heaters for heating the heat treatment board for each of two or more divided regions, and at least a temperature for detecting a temperature of a predetermined portion of the heat treatment board. One sensor, connected to the sensor, based on the detected temperature,
An arithmetic processing unit for mathematically estimating the amount of heat supplied to each part of the substrate to be processed; connected to the arithmetic processing unit, based on the estimated amount of heat supplied to each part, And a control unit for controlling the output of each of the heaters so that the amount of heat supplied becomes uniform. 5. A heat treatment board on which a substrate to be processed is placed, two or more lower heaters for heating the heat treatment board for each of two or more divided areas, and a heat treatment board facing the heat treatment board above the heat treatment board. A cover body arranged to exhaust the gas heated by the heat treatment board; a plurality of divided upper heaters arranged concentrically on a surface of the cover body facing the heat treatment board; At least one sensor for detecting a temperature of a predetermined portion of the sensor, the sensor being connected to the sensor, and
An arithmetic processing unit for mathematically estimating the temperature of each part of the heat treatment panel; connected to the arithmetic processing unit, based on the estimated temperature of each part, so that the temperature of the entire heat treatment panel becomes uniform. A heat treatment apparatus, comprising: a control unit that controls an output of each of the heaters. 6. A heat treatment board on which a substrate to be processed is placed, two or more lower heaters for heating the heat treatment board for each of two or more divided areas, and a heat treatment board facing the heat treatment board above the heat treatment board. A cover body arranged to exhaust the gas heated by the heat treatment panel; a plurality of upper heaters arranged concentrically on a surface facing the heat plate of the cover body; At least one sensor for detecting a temperature of a predetermined portion of the sensor, based on the detected temperature, connected to the sensor, and based on the detected temperature,
An arithmetic processing unit for mathematically estimating the amount of heat acting on each part of the substrate to be processed, and a temperature of the substrate to be processed based on the estimated amount of heat acting on each part connected to the arithmetic processing unit. And a control unit for controlling the output of each of the heaters so as to be uniform. 7. The heat treatment apparatus according to claim 1, wherein the heaters arranged on the heat treatment board are arranged concentrically, and the sensors are arranged in a line in the radial direction of the heat treatment board. A heat treatment apparatus, which is provided. 8. The heat treatment apparatus according to claim 1, wherein the heaters arranged on the heat treatment board are arranged concentrically, and the sensors are arranged in the thickness direction of the heat treatment board. A heat treatment apparatus, which is provided. 9. The heat treatment apparatus according to claim 1, wherein the heaters arranged on the heat treatment board are arranged concentrically, and the sensors are arranged in a row in the radial direction of the heat treatment board. A heat treatment apparatus, which is provided in a thickness direction.