CN110690134B - Method and device for detecting gas leakage of multi-station deposition process and readable storage medium - Google Patents
Method and device for detecting gas leakage of multi-station deposition process and readable storage medium Download PDFInfo
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Abstract
The invention provides a gas cross detection method, equipment and a readable storage medium for a multi-station deposition process, wherein the gas cross detection method comprises the following steps: providing a multi-station deposition device, and performing a multi-station deposition process on one or more wafers through the multi-station deposition device, wherein the multi-station deposition device is provided with a plurality of stations which are positioned in the same chamber and used for accommodating the wafers to perform the multi-station deposition process; carrying out film uniformity detection on the film deposited on the surface of the wafer; detecting the flow of the process gas supplied in the multi-station deposition process; and judging whether gas cross-over occurs in the process of the multi-station deposition process according to the results of the film uniformity detection and the gas supply flow detection. The invention introduces a new gas cross detection method, equipment and readable storage medium of the multi-station deposition process, and finds gas cross in the multi-station deposition process in time by performing film uniformity detection and gas supply flow detection, thereby ensuring the film deposition quality and the product yield.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a gas leakage detection method and device for a multi-station deposition process and a readable storage medium.
Background
In a semiconductor manufacturing process, a thin film deposition process is a critical process. The configuration of equipment in which multiple stations are provided in the same chamber to accommodate multiple wafers has found wide application due to its unique advantages in equipment cost control. The multi-station sequential deposition process (multi-station sequential deposition) is characterized in that a plurality of wafers are controlled to sequentially pass through each station for film deposition, the obtained film deposition uniformity is better, and the uniformity among the wafers is not influenced by the positions of the stations.
At present, in the multi-station deposition process, a spray header is arranged above each station to supply process gas, a film is deposited on the surface of a wafer, and the stations are isolated by gas curtains, so that the process atmosphere conditions of the stations are relatively independent, and the defects of poor film deposition uniformity and the like caused by gas leakage are avoided.
However, parameters such as the supply flow rate and the duration of the process gas are important adjustable parameters of the multi-station deposition process, and when a process menu (recipe) is adjusted, the pressure balance between each station may be broken along with the adjustment of the flow rate and the process time of the process gas, so that a gas cross-over phenomenon occurs between each station. If the gas cross-over phenomenon caused by menu debugging can not be found in time, the film deposition quality and the product yield of the product wafer can be influenced.
Therefore, there is a need for a new method, apparatus and readable storage medium for detecting cross-gas in a multi-station deposition process, which solves the above problems.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method, an apparatus and a readable storage medium for detecting out-of-gas in a multi-station deposition process, which are used to solve the problem that the out-of-gas phenomenon caused by menu debugging cannot be found in time in the prior art, and further the film deposition quality and the product yield of a product wafer are affected.
In order to achieve the above and other related objects, the present invention provides a cross gas detection method for a multi-station deposition process, comprising the steps of:
providing a multi-station deposition device, and performing the multi-station deposition process on one or more wafers through the multi-station deposition device, wherein the multi-station deposition device is provided with a plurality of stations which are positioned in the same chamber and used for accommodating the plurality of wafers to perform the multi-station deposition process;
carrying out film uniformity detection on the film deposited on the surface of the wafer after the multi-station type deposition process is completed;
detecting the gas supply flow of the process gas supplied in the multi-station deposition process;
and judging whether gas cross-over occurs in the process of the multi-station deposition process according to the results of the film uniformity detection and the gas supply flow detection.
As an alternative of the invention, the film uniformity test comprises a test of the thickness uniformity of the film.
As an alternative of the present invention, the thin film comprises a metal thin film, and the thin film uniformity test comprises a test of the sheet resistance uniformity of the thin film.
As an alternative of the present invention, when the multi-station deposition process is performed, the wafer at any station is divided into an adjacent area and a non-adjacent area according to the distance between the wafer and the wafer at other stations, and whether or not a cross gas occurs in the multi-station deposition process is determined according to the result of the film uniformity detection in the adjacent area and the non-adjacent area.
As an alternative scheme of the invention, the number of the process gases is multiple, when the multi-station deposition process is performed, multiple process gases are sequentially introduced into each station, and whether gas cross-flow occurs in the process of the multi-station deposition process is judged by detecting whether different process gases are introduced into each station at any time.
The invention also provides a gas crosstalk detection device of the multi-station deposition process, which is characterized in that: the method comprises the following steps:
the film uniformity detection module is used for carrying out film uniformity detection on the film deposited on the surface of the wafer which completes the multi-station deposition process;
the gas supply flow detection module is used for detecting the gas supply flow of the process gas supplied in the multi-station deposition process;
the controller is used for judging whether gas cross-flow occurs in the process of the multi-station type deposition process according to the results of the film uniformity detection and the gas supply flow detection;
the controller comprises a memory and a processor, the memory storing a computer program, the computer program being executed by the processor for performing the detection method of the invention.
As an alternative of the present invention, the thin film uniformity detection module includes a film thickness detection unit for detecting thickness uniformity of the thin film.
As an alternative of the present invention, the thin film includes a metal thin film, and the thin film uniformity detection module includes a sheet resistance detection unit for detecting sheet resistance uniformity of the thin film.
As an alternative of the present invention, the film uniformity detection module includes a wafer partitioning unit, and the wafer partitioning comparison unit divides the wafer at any station into an adjacent area and a non-adjacent area according to the distance between the wafer and the wafer at other stations during the multi-station deposition process, and obtains the film uniformity detection results of the adjacent area and the non-adjacent area respectively.
As an alternative of the present invention, the process gas is a plurality of process gases, and the supply gas flow rate detection module includes a plurality of flow rate detection units, and the plurality of flow rate detection units correspond to the plurality of process gases one by one and detect flow rates of the process gases changing with time.
The present invention also provides a computer-readable storage medium having stored thereon a computer program characterized in that: the computer program, when executed by a processor, implements a cross-gas detection method of a multi-station deposition process according to the present invention.
As described above, the present invention provides a method, an apparatus and a readable storage medium for detecting cross gas in a multi-station deposition process, which have the following advantages:
the invention introduces a new gas cross detection method, equipment and readable storage medium of the multi-station deposition process, and finds gas cross in the multi-station deposition process in time by performing film uniformity detection and gas supply flow detection, thereby ensuring the film deposition quality and the product yield.
Drawings
Fig. 1 is a flowchart illustrating a cross gas detection method of a multi-station deposition process according to an embodiment of the present invention.
Fig. 2 is a schematic open-chamber view of a multi-station deposition apparatus according to an embodiment of the invention.
Fig. 3 is a schematic diagram illustrating various stations in a multi-station deposition apparatus according to a first embodiment of the invention.
Fig. 4 is a schematic diagram illustrating selected adjacent regions on a single wafer according to one embodiment of the present invention.
Fig. 5 is a schematic diagram illustrating the distribution of sheet resistance of a normal process wafer according to an embodiment of the invention.
Fig. 6 is a schematic diagram illustrating a distribution of sheet resistance of a cross-gas abnormal process wafer according to an embodiment of the invention.
FIG. 7 is a schematic diagram showing the process gas as a function of time during a normal process according to one embodiment of the present invention.
Fig. 8 is a schematic diagram showing a time-dependent change of the process gas during abnormal gas leakage according to the first embodiment of the present invention.
FIG. 9 is a schematic diagram showing the change of the argon flow rate with time according to the first embodiment of the present invention.
Description of the element reference
100 standing position
100a first station
100b second station
100c third station
100d fourth station
101 wafer
101a neighborhood
101b first distribution area
101c second distribution area
101d third distribution area
101e fourth distribution area
101f fifth distribution area
101g sixth distribution area
101h seventh distribution area
101i eighth distribution area
101j ninth distribution area
102 shower head
103 plasma
S1-S4 steps 1) -4)
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 9. It should be noted that the drawings provided in the present embodiment are only for schematically illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
Example one
Referring to fig. 1 to 9, the present embodiment provides a cross gas detection method for a multi-station deposition process, which includes the following steps:
1) providing a multi-station deposition device, and performing the multi-station deposition process on one or more wafers through the multi-station deposition device, wherein the multi-station deposition device is provided with a plurality of stations which are positioned in the same chamber and used for accommodating the plurality of wafers to perform the multi-station deposition process;
2) carrying out film uniformity detection on the film deposited on the surface of the wafer after the multi-station type deposition process is completed;
3) detecting the gas supply flow of the process gas supplied in the multi-station deposition process;
4) and judging whether gas cross-over occurs in the process of the multi-station deposition process according to the results of the film uniformity detection and the gas supply flow detection.
In step 1), please refer to S1 of fig. 1 and fig. 2 to 3, a multi-station deposition apparatus is provided, the multi-station deposition apparatus performs the multi-station deposition process on a plurality of wafers, and the multi-station deposition apparatus has a plurality of stations located in a same chamber for accommodating the plurality of wafers to perform the multi-station deposition process.
Fig. 2 is an open schematic view of a process chamber of the multi-station deposition apparatus provided in the present embodiment, in which an upper cover portion of the chamber is not shown. As can be seen from fig. 1, 4 stations 100 (stations) for placing wafers 101 for thin film deposition are provided in the same chamber. Specifically, the 4 station positions are a first station position 100a (STN1), a second station position 100b (STN2), a third station position 100c (STN3), and a fourth station position 100d (STN4), respectively. The 4 wafers 101 are respectively placed on the corresponding stations 100, and an area of any one of the wafers 101 near an adjacent station is defined as an adjacent area 101 a. In other embodiments, the number of stations provided in the chamber is not limited.
As shown in fig. 3, is a schematic view of the various stations in the multi-station deposition apparatus. Wherein, a shower head 102(shower) for supplying a process gas is further disposed on each of the first station 100a, the second station 100b, the third station 100c, and the fourth station 100 d. Air curtain isolation devices (not shown) for isolation are also provided around the locations of the stations. During the deposition process, the wafer is transferred to the first station 100a and sequentially passes through the stations to complete the deposition process. Each station supplies process gas through the showerhead 102 and forms plasma 103 through rf power to deposit a thin film on the surface of the wafer 101. The components and functions of the various stations are shown in fig. 3, and not a real deposition run of the wafer. The deposition process also includes a pre-nucleation and gas purge (purge) process. As the requirements of advanced processes for film quality are increasing, the corresponding deposition process generally includes a plurality of cycles of nucleation, deposition and rinsing processes, and the wafers are moved in the chamber while the above cycles are completed, so as to form a high quality film with good uniformity. However, although each station is isolated by the gas curtain during the process, when the process menu is debugged according to the process requirement, the gas pressure balance among the stations is easily broken, so that the gas cross phenomenon is caused, namely, the process gas supplied to a certain station abnormally flows to other stations, the normal process is influenced, and the film deposition quality is poor. It should be noted that the cross gas detection method provided by the present invention is not limited to the multi-station sequential deposition process in this embodiment, and the cross gas detection method of the present invention may be adopted for cross gas detection in any process that a plurality of stations are provided in the same chamber and process gases are independently supplied to each station.
In step 2), referring to S2 of fig. 1 and fig. 4 to 6, a film uniformity detection is performed on the film deposited on the surface of the wafer after the multi-station deposition process is completed. The quality and uniformity of the deposited film on the wafer surface are directly affected by the gas cross-over phenomenon. Therefore, whether the gas cross is generated in the multi-station deposition process can be accurately judged by detecting the quality and the uniformity of the film deposited on the surface of the wafer.
As an example, the thin film uniformity detection includes detection of thickness uniformity of the thin film. Because the gas cross phenomenon can cause the film forming uniformity in the wafer surface to be influenced, whether the gas cross problem exists in the deposition process of the film can be accurately found by detecting the film thickness uniformity on the wafer surface. Specifically, for dielectric thin films such as silicon dioxide and silicon nitride or metal thin films such as aluminum and tungsten, the thickness of the thin film can be measured by interference or the like using light waves of different wavelength bands, or the thickness of the thin film can be calculated by using characteristic signals collected after the thin film is irradiated by x-rays. The thickness of the film at different positions in the wafer surface is measured, so that the uniformity of the thickness of the film in the wafer surface can be further obtained, and whether the gas leakage phenomenon exists or not is judged by comparing the uniformity with a standard specification.
As an example, the thin film comprises a metal thin film, and the thin film uniformity detection comprises detection of sheet resistance uniformity of the thin film. For the metal thin film of aluminum, tungsten, etc., the uniformity of the thin film can be determined by measuring the square resistance because of the conductivity.
As an example, in order to accurately determine whether the uniformity of the thin film is influenced by the gas cross phenomenon, but not caused by other process abnormalities, the thin films at different positions in the wafer plane may be compared and analyzed when determining the uniformity of the thin film. Optionally, the wafer at any station is divided into an adjacent area and a non-adjacent area according to the distance between the wafer and the wafer at other stations during the multi-station deposition process, and whether or not gas cross-over occurs in the multi-station deposition process is determined according to the result of the film uniformity detection of the adjacent area and the non-adjacent area.
As shown in fig. 4, the adjacent area 101a is selected on a single wafer. Referring to fig. 2, it can be seen that the neighboring area 101a corresponds to a position adjacent to other stations. And when the film uniformity is judged, judging whether gas cross-over occurs in the multi-station type deposition process according to the film uniformity detection results of the adjacent area and the non-adjacent area. As shown in fig. 5, the simulated distribution diagram of the wafer sheet resistance test data without occurrence of gas cross-talk is shown. In fig. 5, a distribution area of the sheet resistance is simulated according to the sheet resistance values measured by a plurality of test points in the wafer surface. The mean square resistance of the first distribution area 101b is 7.000ohm/sq, the mean square resistance of the second distribution area 101c is 6.675ohm/sq, the mean square resistance of the third distribution area 101d is 6.350ohm/sq, the mean square resistance of the fourth distribution area 101e is 6.025ohm/sq, the mean square resistance of the fifth distribution area 101f is 5.700ohm/sq, the mean square resistance of the whole wafer surface is 5.798ohm/sq, and the uniformity is 5.0%. As can be seen from fig. 5, the uniformity of the distribution of the sheet resistance values in the adjacent region 101a is good, and no anomaly occurs, which indicates that no gas cross occurs during the deposition process. As shown in fig. 6, a graph of simulated distribution of wafer sheet resistance test data with gas cross-talk anomaly. In fig. 6, the mean square resistance of the third distribution region 101d is 6.350ohm/sq, the mean square resistance of the fourth distribution region 101e is 6.025ohm/sq, the mean square resistance of the fifth distribution region 101f is 5.700ohm/sq, the mean square resistance of the sixth distribution region 101g is 5.375ohm/sq, the mean square resistance of the seventh distribution region 101h is 5.050ohm/sq, the mean square resistance of the eighth distribution region 101i is 4.725ohm/sq, the mean square resistance of the ninth distribution region 101j is 4.400ohm/sq, the mean square resistance of the entire wafer is 5.589ohm/sq, and the uniformity is 11.6%. As can be seen from fig. 6, the sheet resistance uniformity in the wafer plane drastically changes from the normal 5.0% to 11.6% due to abnormal outgassing, and the sheet resistance value distribution uniformity in the adjacent area 101a is significantly deteriorated. This indicates that the cross-gas phenomenon occurring during the deposition process will significantly affect the uniformity of the sheet resistance in the wafer surface, and particularly, the distribution of the sheet resistance values in the adjacent area 101a can characterize whether the wafer 101 has abnormal cross-gas phenomenon during the film deposition process.
In step 3), please refer to S3 of fig. 1 and fig. 7 to 8, the gas supply flow rate of the process gas supplied in the multi-station deposition process is detected. The gas cross phenomenon generated among all stations in the film deposition process influences the pressure balance of process gas supply, so that the pressure balance is reflected to the supply flow change of the process gas, and whether the abnormal gas cross phenomenon occurs in the film deposition process can be timely found by monitoring the flow of the process gas used in the deposition process.
As an example, the process gas is a plurality of process gases, when the multi-station deposition process is performed, a plurality of process gases are sequentially introduced into each station, and whether or not gas cross-over occurs in the process of the multi-station deposition process is determined by detecting whether or not different process gases are introduced into each station at any time.
Fig. 7 is a schematic diagram showing the time-varying relationship of the process gases supplied to each station in the multi-station deposition process without the gas cross-over phenomenon as exemplified in the present embodiment. In fig. 7, the trough position in the graph for each process gas indicates that the gas is being supplied to the corresponding station. In this example, the deposition process used was a pulsed nucleation deposition process with sequential B-injections in a single pulse cycle2H6、WF6And NH3And (4) processing gas to complete the nucleation and growth process of the film. Each process gas inlet interval also comprises a gas flushing (purge) process to prevent the cross influence of different process gases. In addition, because a multi-station sequential deposition process is employed, wafers are initially loaded into the process chamber from the first station STN1 and moved sequentially through the stations. The first station STN1 is primarily responsible for nucleation of the initial wafer surface, thus B at the first station STN12H6The gas supply duration is different from the other stations. As can be seen in FIG. 7, the first site STN1 has a different B than the other sites STN2-42H6Supply time of B2H6And WF6A gas flushing (purge) process is also provided between the supply intervals. At WF6Prior to supply, the first station STN1 was set to a different gas washout time of 2.15s and 2.65s from the other stations STN2-4, respectively, which ensured a subsequent WF between the first station STN1 and the other stations STN2-46The supply intervals have the same initial time, so that the gas supply of each station is not influenced by each other in each subsequent cycle, and the gas leakage abnormality cannot occur.
Fig. 8 is a schematic diagram showing the time-varying relationship of the process gas supplied to each station in the multi-station deposition process in which the cross-gas phenomenon occurs as exemplified in the present embodiment. Since the gas pressure balance between the stations in the multi-station deposition process is easily broken to cause gas cross-talk, it is necessary to pay attention to whether the gas cross-talk is abnormal due to the adjustment of the gas supply setting during the debugging of the process menu related to the process gas supply. In particular, the amount of the solvent to be used,in fig. 8, to improve the deposition process conditions, the gas purging times of the first station STN1 and the other stations STN2-4 were adjusted to 8.0s and 8.0 s. However, as can be seen in FIG. 8, after changing the flush (purge) time, the subsequent WF6The start of the feed is misaligned and becomes increasingly noticeable after the accumulation of a number of cycles. At the locations indicated by the bold black boxes in fig. 8, the first station STN1 and the other stations STN2-4 are supplied with different process gases at the same time. For example, the two black boxes at the front of the time indicate that the first station STN1 has NH supplied3Gas and other station STN2-4 supplies B2H6Gas, two black boxes later in time indicate that the first station STN1 is supplying WF6Gas and other station STN2-4 is supplied with NH3A gas. This will seriously affect the balance of air supply pressure among stations, and further cause abnormal air leakage. Therefore, whether the deposition process has the risk of abnormal gas cross-over or not can be judged by detecting and analyzing the supply flow of each process gas in the deposition process.
It should be noted that the above is only an example of the process gas flow rate detection, and B is the same as that of the above2H6、WF6And NH3The flow rate of (2) is detected. Besides, the invention can also detect the change of the gas flow rate of other participating processes. For example, as shown in fig. 9, the flow rate of the inert gas argon (Ar) is shown as a graph showing a change with time. In the thin film deposition process, argon may be used as WF6And the carrier gas of the process gas. As can be seen in fig. 9, the flow rates of the two argon ArY and ArE originally continuously and smoothly supplied in the process suddenly drop during a certain period of time, which indicates that the pressure balance of the process gas is damaged during the period of time, and reveals that abnormal gas cross-flow occurs between the stations in the chamber at the moment.
In step 4), please refer to S4 of fig. 1, determine whether cross-gas occurs in the multi-station deposition process according to the results of the film uniformity detection and the gas supply flow detection. And (3) integrating the film uniformity detection result in the step 2) and the gas supply flow detection result in the step 3), verifying each other, accurately judging whether the gas mixing occurs in the multi-station deposition process, and eliminating the influence caused by other process abnormalities. For example, the result of the film uniformity detection in step 2) shows that the film uniformity in the neighboring area is not good, but the supply gas flow rate detection in step 3) shows an abnormality that the supply flow rates of the respective process gases do not affect each other. At this time, the process maintenance personnel can judge that the poor uniformity of the film is not necessarily caused by the gas leakage phenomenon, and further investigate the abnormal source by combining other technical analysis means. On the other hand, if the film uniformity detection in step 2) is not abnormal, but the supply gas flow detection in step 3) shows that the supply flow of each process gas has a risk of mutual influence, it indicates that the current process has no gas cross or uniformity problem caused by gas cross, but in order to ensure the process stability, a process maintenance worker also needs to further monitor and optimize the process.
It should be further noted that, in this embodiment, for the purpose of clearly illustrating the method for detecting the cross gas, the detection of the uniformity of the film in step 2) and the detection of the flow rate of the supplied gas in step 3) are labeled in sequence. However, the present invention is not limited to the sequence of the above two steps, and in other embodiments of the present invention, the supply air flow rate detection may be performed first, and then the film uniformity detection may be performed, or both may be performed simultaneously.
Example two
The embodiment provides a gas leakage detection device of a multi-station deposition process, which is characterized in that: the method comprises the following steps:
the film uniformity detection module is used for carrying out film uniformity detection on the film deposited on the surface of the wafer after the multi-station deposition process is finished;
the gas supply flow detection module is used for detecting the gas supply flow of the process gas supplied in the multi-station deposition process;
the controller is used for judging whether gas cross-flow occurs in the process of the multi-station type deposition process according to the results of the film uniformity detection and the gas supply flow detection; the controller comprises a memory and a processor, wherein the memory stores a computer program, and the computer program is executed by the processor to execute the method for detecting the gas leakage.
Based on the cross gas detection device of the multi-station deposition process described in this embodiment, the cross gas detection method described in the first embodiment may be implemented. Optionally, the gas leakage detection device provided in this embodiment may be fully or partially integrated in the existing multi-station deposition apparatus, so as to save the plant area and simplify the product operation process.
As an example, the thin film uniformity detection module includes a film thickness detection unit for detecting thickness uniformity of the thin film. Specifically, the film thickness detection unit comprises a film thickness measuring instrument for measuring the film thickness in the wafer surface, and is used for measuring the film thickness of dielectric films such as silicon dioxide and silicon nitride and metal films such as aluminum and tungsten.
As an example, the thin film includes a metal thin film, and the thin film uniformity detection module includes a sheet resistance detection unit for detecting sheet resistance uniformity of the thin film. Specifically, the sheet resistance detection unit includes a four-probe tester and other devices capable of measuring sheet resistance of the thin film.
As an example, the film uniformity detection module includes a wafer partitioning unit, and the wafer partitioning comparison unit divides the wafer at any station into an adjacent area and a non-adjacent area according to a distance between the wafer and the wafer at another station when the multi-station deposition process is performed, and obtains the film uniformity detection results of the adjacent area and the non-adjacent area respectively. As shown in fig. 1 and 4, the adjacent area 101a is divided in the first embodiment, and is an area portion of the wafer 101 near other stations during the deposition process. And the controller judges whether gas cross-over occurs in the process of the multi-station deposition process according to the film uniformity detection data. For example, if the difference between the mean values of the detection data of the adjacent region and the non-adjacent region exceeds a specification set value, it is determined that the film uniformity detection result is abnormal, and gas cross-over may occur during the multi-station deposition process.
As an example, the process gas is a plurality of process gases, and the supply gas flow rate detection module includes a plurality of flow rate detection units, which correspond to the plurality of process gases one by one and detect the flow rate of the process gas changing with time. Specifically, the flow rate detection unit includes mass flow control devices (MFCs) that are provided on respective lines through which process gas is supplied, and control and measure the flow rate of the gas flowing through the lines. The gas supply flow detection module detects the gas flow through the flow detection unit to obtain the data of the change of the gas flow of each path along with the time. And the controller judges whether gas mixing occurs in the process of the multi-station deposition process according to the gas supply flow detection data. For example, when a plurality of paths of process gases are supplied to different process gases at different stations at a certain time, it is determined that the gas supply flow detection result is abnormal, and gas cross-over may occur in the multi-station deposition process. Further, according to the judgment standard in step 4), the controller comprehensively compares the film uniformity detection result and the gas supply flow detection result, provides a process treatment suggestion, and timely sends an alarm to notify related personnel when gas cross is determined.
As an example, the controller comprises a memory and a processor, the memory stores a computer program, and the computer program is executed by the processor to perform the cross gas detection method according to the first embodiment. The processor and the memory may be interconnected by a bus or otherwise by a communication interface. Specifically, the processor may be any available device with information processing function, such as a central processing unit or a digital signal processor, etc., for implementing the memory programming method according to the first embodiment; the memory, coupled to the processor, may be any of a variety of available storage media for storing instructions executable by the processor.
EXAMPLE III
The present embodiment provides a computer-readable storage medium having a computer program stored thereon, wherein: the computer program, when executed by a processor, implements a cross-gas detection method for a multi-station deposition process as described in example one.
As an example, it can be understood by those skilled in the art that all or part of the processes in the methods of the embodiments described above can be implemented by a computer program to instruct related hardware, and the program can be stored in a computer readable storage medium, and when executed, the program can include the processes of the embodiments of the methods described above. The storage medium may be a magnetic Disk, an optical Disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a Flash Memory (Flash Memory), a Hard Disk (Hard Disk Drive, HDD), a Solid-State Drive (SSD), or the like; the storage medium may also comprise a combination of memories of the kind described above.
In summary, the present invention provides a method, an apparatus and a readable storage medium for detecting cross gas in a multi-station deposition process, wherein the method comprises the following steps: providing a multi-station deposition device, and performing the multi-station deposition process on a plurality of wafers through the multi-station deposition device, wherein the multi-station deposition device is provided with a plurality of stations which are positioned in the same chamber and used for accommodating the plurality of wafers to perform the multi-station deposition process; carrying out film uniformity detection on the film deposited on the surface of the wafer after the multi-station type deposition process is completed; detecting the gas supply flow of the process gas supplied in the multi-station deposition process; and judging whether gas cross-over occurs in the process of the multi-station deposition process according to the results of the film uniformity detection and the gas supply flow detection. The invention introduces a new gas cross detection method, equipment and readable storage medium of the multi-station deposition process, and finds gas cross in the multi-station deposition process in time by performing film uniformity detection and gas supply flow detection, thereby ensuring the film deposition quality and the product yield.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (11)
1. A gas cross detection method of a multi-station deposition process is characterized by comprising the following steps:
providing a multi-station deposition device, and performing the multi-station deposition process on one or more wafers through the multi-station deposition device, wherein the multi-station deposition device is provided with a plurality of stations which are positioned in the same chamber and used for accommodating the plurality of wafers to perform the multi-station deposition process;
carrying out film uniformity detection on the film deposited on the surface of the wafer after the multi-station type deposition process is completed;
detecting the gas supply flow of the process gas supplied in the multi-station deposition process;
and integrating the results of the film uniformity detection and the gas supply flow detection, mutually verifying, and judging whether gas cross-over occurs in the process of the multi-station deposition process.
2. The cross-gas detection method of the multi-station deposition process of claim 1, wherein: the film uniformity detection includes detection of thickness uniformity of the film.
3. The cross-gas detection method of the multi-station deposition process as claimed in claim 1, wherein: the film comprises a metal film, and the film uniformity detection comprises detection of the sheet resistance uniformity of the film.
4. The cross-gas detection method of the multi-station deposition process as claimed in claim 1, wherein: dividing the wafer of any station into an adjacent area and a non-adjacent area according to the distance between the wafer and the wafers on other stations when the multi-station deposition process is carried out, and judging whether gas cross occurs in the process of the multi-station deposition process according to the film uniformity detection results of the adjacent area and the non-adjacent area.
5. The cross-gas detection method of the multi-station deposition process as claimed in claim 1, wherein: the process gas is in various types, when the multi-station type deposition process is carried out, various types of process gas are sequentially introduced into each station, and whether the gas mixing occurs in the process of the multi-station type deposition process is judged by detecting whether different types of process gas are introduced into each station at any time.
6. A gas crosstalk check out test set of multistation formula deposition process which characterized in that: the method comprises the following steps:
the system comprises a film uniformity detection module, a film uniformity detection module and a control module, wherein the film uniformity detection module is used for performing film uniformity detection on a film deposited on the surface of a wafer which completes a multi-station type deposition process, the multi-station type deposition process is performed in multi-station type deposition equipment, and the multi-station type deposition equipment is provided with a plurality of stations which are positioned in the same chamber and used for accommodating a plurality of wafers to perform the multi-station type deposition process;
the gas supply flow detection module is used for detecting the gas supply flow of the process gas supplied in the multi-station deposition process;
the controller is used for integrating the results of the film uniformity detection and the gas supply flow detection, mutually verifying and judging whether gas cross occurs in the process of the multi-station deposition process;
the controller includes a memory and a processor.
7. The cross-gas detection apparatus of the multi-station deposition process of claim 6, wherein: the film uniformity detection module comprises a film thickness detection unit for detecting the thickness uniformity of the film.
8. The cross-gas detection apparatus of the multi-station deposition process of claim 6, wherein: the thin film comprises a metal thin film, and the thin film uniformity detection module comprises a square resistance detection unit for detecting the square resistance uniformity of the thin film.
9. The cross-gas detection apparatus of the multi-station deposition process of claim 6, wherein: the film uniformity detection module comprises a wafer partition unit, wherein the wafer partition unit divides the wafer of any station into an adjacent area and a non-adjacent area according to the distance between the wafer of the other station and the wafer of the multi-station type deposition process, and respectively obtains the film uniformity detection results of the adjacent area and the non-adjacent area.
10. The cross-gas detection apparatus of the multi-station deposition process of claim 6, wherein: the process gas is various, the gas supply flow detection module comprises a plurality of flow detection units, and the flow detection units correspond to the process gas in various manners one by one and detect the flow of the process gas changing along with time.
11. A computer-readable storage medium having stored thereon a computer program, characterized in that: the computer program, when executed by a processor, implements a method of cross gas detection for a multi-station deposition process as claimed in any one of claims 1-5.
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