CN109280901A - 钨膜的成膜方法和成膜装置 - Google Patents

钨膜的成膜方法和成膜装置 Download PDF

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Publication number
CN109280901A
CN109280901A CN201811389808.8A CN201811389808A CN109280901A CN 109280901 A CN109280901 A CN 109280901A CN 201811389808 A CN201811389808 A CN 201811389808A CN 109280901 A CN109280901 A CN 109280901A
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China
Prior art keywords
film
gas
tungsten
chloride gas
process container
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CN201811389808.8A
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English (en)
Chinese (zh)
Inventor
堀田隼史
饗场康
前川浩治
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201811389808.8A 2014-03-25 2015-03-25 钨膜的成膜方法和成膜装置 Pending CN109280901A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014061929 2014-03-25
JP2014-061929 2014-03-25
JP2015-012922 2015-01-27
JP2015012922A JP6437324B2 (ja) 2014-03-25 2015-01-27 タングステン膜の成膜方法および半導体装置の製造方法
CN201510133979.4A CN104947064B (zh) 2014-03-25 2015-03-25 钨膜的成膜方法和半导体器件的制造方法

Related Parent Applications (1)

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Publication Number Publication Date
CN109280901A true CN109280901A (zh) 2019-01-29

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CN201811389808.8A Pending CN109280901A (zh) 2014-03-25 2015-03-25 钨膜的成膜方法和成膜装置
CN201510133979.4A Active CN104947064B (zh) 2014-03-25 2015-03-25 钨膜的成膜方法和半导体器件的制造方法

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US (1) US9536782B2 (enExample)
JP (1) JP6437324B2 (enExample)
KR (1) KR101785145B1 (enExample)
CN (2) CN109280901A (enExample)
TW (2) TWI703620B (enExample)

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JP6416679B2 (ja) * 2015-03-27 2018-10-31 東京エレクトロン株式会社 タングステン膜の成膜方法
JP6929790B2 (ja) 2015-05-27 2021-09-01 エーエスエム アイピー ホールディング ビー．ブイ． モリブデン又はタングステン含有薄膜のａｌｄ用前駆体の合成及び使用方法
JP6710089B2 (ja) * 2016-04-04 2020-06-17 東京エレクトロン株式会社 タングステン膜の成膜方法
US10087523B2 (en) * 2016-05-20 2018-10-02 Lam Research Corporation Vapor delivery method and apparatus for solid and liquid precursors
CN109563619A (zh) * 2016-07-26 2019-04-02 东京毅力科创株式会社 钨膜的成膜方法
JP6751631B2 (ja) * 2016-09-13 2020-09-09 東京エレクトロン株式会社 基板の凹部をタングステンで充填する方法
US10358407B2 (en) * 2016-10-12 2019-07-23 Asm Ip Holding B.V. Synthesis and use of precursors for vapor deposition of tungsten containing thin films
KR102254275B1 (ko) 2016-12-05 2021-05-20 제이엑스금속주식회사 고순도 5염화텅스텐 및 그 제조 방법
KR102361468B1 (ko) * 2016-12-15 2022-02-09 어플라이드 머티어리얼스, 인코포레이티드 핵형성을 사용하지 않는 갭 충전 ald 프로세스
US10460987B2 (en) * 2017-05-09 2019-10-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package device with integrated antenna and manufacturing method thereof
JP7018748B2 (ja) 2017-11-28 2022-02-14 東京エレクトロン株式会社 成膜方法及び成膜条件の算出方法
JP7072399B2 (ja) * 2018-02-21 2022-05-20 東京エレクトロン株式会社 タングステン膜の成膜方法、成膜システム及び記憶媒体
JP7149788B2 (ja) * 2018-09-21 2022-10-07 東京エレクトロン株式会社 成膜方法及び成膜装置
US11387112B2 (en) * 2018-10-04 2022-07-12 Tokyo Electron Limited Surface processing method and processing system
WO2020084852A1 (ja) 2018-10-25 2020-04-30 Ｊｘ金属株式会社 モリブデンオキシクロライド又はタングステンオキシクロライド及びそれらの製造方法
US12312678B2 (en) 2018-12-19 2025-05-27 Entegris, Inc. Methods for depositing a tungsten or molybdenum layer in the presence of a reducing co-reactant
JP7362258B2 (ja) 2019-02-08 2023-10-17 東京エレクトロン株式会社 基板処理方法及び成膜システム
KR20210144776A (ko) * 2019-03-28 2021-11-30 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법
JP2021001361A (ja) 2019-06-19 2021-01-07 東京エレクトロン株式会社 処理方法及び基板処理システム
KR102867763B1 (ko) 2019-11-21 2025-10-14 삼성전자주식회사 반도체 장치의 제조방법 및 반도체 장치의 제조 설비
JP7487538B2 (ja) * 2020-04-15 2024-05-21 東京エレクトロン株式会社 タングステン膜を形成する方法及び装置、並びにタングステン膜を形成する前の中間膜の形成を行う装置
US20240271274A1 (en) * 2023-01-12 2024-08-15 University Of Central Florida Research Foundation, Inc. Stress-controlled defect engineering in ceria nanostructures

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JP2015193908A (ja) 2015-11-05
TWI646582B (zh) 2019-01-01
US9536782B2 (en) 2017-01-03
TWI703620B (zh) 2020-09-01
CN104947064A (zh) 2015-09-30
CN104947064B (zh) 2018-11-13
US20150279735A1 (en) 2015-10-01
JP6437324B2 (ja) 2018-12-12
TW201545210A (zh) 2015-12-01
KR101785145B1 (ko) 2017-10-12
TW201909247A (zh) 2019-03-01
KR20150111302A (ko) 2015-10-05

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