CN109075148B - 半导体封装体、安装有半导体封装体的模块及电气设备 - Google Patents

半导体封装体、安装有半导体封装体的模块及电气设备 Download PDF

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Publication number
CN109075148B
CN109075148B CN201780026378.0A CN201780026378A CN109075148B CN 109075148 B CN109075148 B CN 109075148B CN 201780026378 A CN201780026378 A CN 201780026378A CN 109075148 B CN109075148 B CN 109075148B
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China
Prior art keywords
electrode
parallel
semiconductor layer
electrode pad
semiconductor
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CN201780026378.0A
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English (en)
Chinese (zh)
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CN109075148A (zh
Inventor
河合弘治
八木修一
越后谷祥子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yuanshan New Material Technology Co Ltd
Original Assignee
Santian Co
Powdec KK
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Priority claimed from PCT/JP2017/034411 external-priority patent/WO2018056426A1/ja
Publication of CN109075148A publication Critical patent/CN109075148A/zh
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    • H10W72/5363—
    • H10W72/5475—
    • H10W74/00—
    • H10W90/753—
    • H10W90/756—

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Structure Of Printed Boards (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN201780026378.0A 2016-09-26 2017-09-25 半导体封装体、安装有半导体封装体的模块及电气设备 Active CN109075148B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2016186741 2016-09-26
JP2016-186741 2016-09-26
JP2017-018254 2017-02-03
JP2017018254A JP6304700B2 (ja) 2016-09-26 2017-02-03 半導体パッケージ、モジュールおよび電気機器
PCT/JP2017/034411 WO2018056426A1 (ja) 2016-09-26 2017-09-25 半導体パッケージ、モジュールおよび電気機器

Publications (2)

Publication Number Publication Date
CN109075148A CN109075148A (zh) 2018-12-21
CN109075148B true CN109075148B (zh) 2019-08-16

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Country Status (2)

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JP (2) JP6304700B2 (cg-RX-API-DMAC10.html)
CN (1) CN109075148B (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10912195B2 (en) * 2019-01-02 2021-02-02 The Boeing Company Multi-embedded radio frequency board and mobile device including the same
CN110113877B (zh) * 2019-06-06 2021-11-05 景旺电子科技(龙川)有限公司 一种激光切割法制作金属基线路板的方法
JP7562529B2 (ja) * 2019-07-01 2024-10-07 ローム株式会社 半導体装置
JP7088132B2 (ja) * 2019-07-10 2022-06-21 株式会社デンソー 半導体装置及び電子装置
JP7298467B2 (ja) * 2019-12-17 2023-06-27 三菱電機株式会社 半導体モジュールおよび半導体装置
WO2022055248A1 (ko) * 2020-09-08 2022-03-17 한양대학교에리카산학협력단 열전 복합체 및 그 제조방법, 그리고 열전 복합체를 포함하는 열전 소자 및 반도체 소자
KR102597072B1 (ko) * 2020-09-08 2023-11-01 한양대학교 에리카산학협력단 이성분계 산화물 2deg 및 2dhg 열전 소자 기반 능동 냉각 장치 및 그 제조방법
JP7337034B2 (ja) * 2020-09-15 2023-09-01 三菱電機株式会社 半導体パッケージおよび半導体装置
CN112687740B (zh) * 2020-12-30 2022-06-21 江苏大学 一种AlGaN/GaN高电子迁移率晶体管及制造方法
JP7571743B2 (ja) * 2022-02-04 2024-10-23 株式会社デンソー 半導体装置
CN115656298B (zh) * 2022-10-25 2025-09-30 电子科技大学 一种基于oect的人工神经突触及其制备方法
WO2025033552A1 (ja) * 2023-08-10 2025-02-13 京セラ株式会社 回路及び半導体素子

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06821Y2 (ja) * 1987-12-25 1994-01-05 シチズン時計株式会社 半導体装置の実装構造
JP2001168123A (ja) * 1999-12-09 2001-06-22 Seiko Epson Corp 半導体装置及びその製造方法、半導体装置の製造装置、回路基板並びに電子機器
JP2001358259A (ja) * 2000-06-15 2001-12-26 Seiko Epson Corp 半導体パッケージ
JP2003338519A (ja) * 2002-05-21 2003-11-28 Renesas Technology Corp 半導体装置及びその製造方法
JP3918681B2 (ja) * 2002-08-09 2007-05-23 カシオ計算機株式会社 半導体装置
JP4386239B2 (ja) * 2003-03-12 2009-12-16 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP2006049682A (ja) * 2004-08-06 2006-02-16 Toshiba Corp 半導体装置及びその製造方法
JP4549171B2 (ja) * 2004-08-31 2010-09-22 三洋電機株式会社 混成集積回路装置
JP2009081293A (ja) * 2007-09-26 2009-04-16 Oki Semiconductor Co Ltd 半導体チップ、及び複数の半導体チップが搭載された半導体装置
US8304915B2 (en) * 2008-07-23 2012-11-06 Nec Corporation Semiconductor device and method for manufacturing the same
JP2010050286A (ja) * 2008-08-21 2010-03-04 Toshiba Corp 半導体装置
JP2010283265A (ja) * 2009-06-08 2010-12-16 Mitsubishi Electric Corp 電気回路用気密パッケージ及び電気回路用気密パッケージの製造方法
JP5155989B2 (ja) * 2009-11-30 2013-03-06 旭化成エレクトロニクス株式会社 半導体装置及びその製造方法
JP2014143326A (ja) * 2013-01-24 2014-08-07 Transphorm Japan Inc 半導体装置、半導体装置の製造方法、リード、及びリードの製造方法
JP2015142077A (ja) * 2014-01-30 2015-08-03 株式会社東芝 半導体装置
JP5828435B1 (ja) * 2015-02-03 2015-12-09 株式会社パウデック 半導体素子、電気機器、双方向電界効果トランジスタおよび実装構造体
JP2016171197A (ja) * 2015-03-12 2016-09-23 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JP6744610B2 (ja) 2020-08-19
JP6304700B2 (ja) 2018-04-04
CN109075148A (zh) 2018-12-21
JP2018056538A (ja) 2018-04-05
JP2018093221A (ja) 2018-06-14

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Effective date of registration: 20201119

Address after: No.9 Haichuan Road, high tech Zone, Jining City, Shandong Province

Patentee after: Yuanshan New Material Technology Co., Ltd

Address before: Tochigi County, Japan

Patentee before: POWDEC Kabushiki Kaisha

TR01 Transfer of patent right