CN109075089A - 电力用半导体装置及其制造方法 - Google Patents

电力用半导体装置及其制造方法 Download PDF

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Publication number
CN109075089A
CN109075089A CN201780028691.8A CN201780028691A CN109075089A CN 109075089 A CN109075089 A CN 109075089A CN 201780028691 A CN201780028691 A CN 201780028691A CN 109075089 A CN109075089 A CN 109075089A
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layer
electrode
copper
layers
polyimide layer
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CN109075089B (zh
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冈部博明
中西洋介
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

电极(1)设置于半导体层(11)上。聚酰亚胺层(12)具有配置于电极(1)上的开口部(OP)、且聚酰亚胺层(12)覆盖电极(1)的边缘而延伸至电极(1)上。铜层(13)在开口部(OP)内设置于电极(1)上，与电极(1)上的聚酰亚胺层(12)分离。铜引线(14)具有被接合于铜层(13)上的一端。

Description

电力用半导体装置及其制造方法
技术领域
本发明涉及电力用半导体装置及其制造方法，特别涉及具有铜引线的电力用半导体装置及其制造方法。
背景技术
以往，使用Si(硅)的功率半导体元件得到广泛使用。近年来，从节能的观点出发而要求功率半导体元件的特性改善。因此，作为下一代的高耐压、低损耗功率半导体元件，开始使用利用SiC(碳化硅)的功率半导体元件。在功率半导体元件中，有具有金属-氧化物-半导体(Metal-Oxide-Semiconductor：MOS)构造的场效应晶体管(Field-Effect-Transistor：FET)、以及肖特基二极管等。SiC-MOSFET能够应用依照Si-MOSFET的基本的元件构造的构造。这样虽然构造大致共同，但由于SiC具有比Si大的带隙，所以SiC-MOSFET能够比Si-MOSFET在更高的温度下动作。具体而言，Si-MOSFET通常在小于200℃的温度下动作，但SiC-MOSFET能够在其以上的温度下动作。这样，使用SiC的功率半导体元件能够比使用Si的功率半导体元件在更高的温度下动作。另外，通过使用SiC，还能得到低损耗以及高速动作这样的优点。
作为用于对功率半导体元件与外部电路之间进行电连接的典型的方法，进行引线键合。即，对设置于元件表面的电极，接合导体引线。以往，广泛使用铝(Al)引线作为导体引线，但近年来，对使用铜(Cu)引线进行研究。由于Cu的导电率比Al的导电率高，所以通过使用Cu引线，能够降低引线的电阻。另外，由于Cu的屈服强度比Al的屈服强度高，所以通过使用Cu引线，能够提高引线相对温度循环的可靠性。
相比于Al引线，Cu引线对其被接合的部位造成更强的冲击。特别，功率半导体元件对大的电流进行处理，所以与其对应地需要大的引线直径，因此引线键合时的冲击变得更强。
例如，根据日本特开2013-243166号公报(专利文献1)，公开了对使用SiC的功率半导体元件的电极接合铜引线的技术。电极具有钛层以及铝层。在提供超声波振动的同时，针对铝层接合铜引线。根据该公报，通过使用作为硬的材料的钛层，减小向功率半导体元件的电极的损害。在电极的周围，以与电极的边缘相接的方式设置聚酰亚胺层。该聚酰亚胺层具有作为电极的周围的保护膜的功能。通过设置保护膜，能提高功率半导体元件的可靠性。
例如，根据日本特开2014-082367号公报(专利文献2)，对SiC单晶芯片上的电极，接合Cu或者Cu合金的引线(以下还简称为“铜引线”或者“Cu引线”)。电极包括由Cu或者Cu合金构成的最上层、和具有高的硬度的保护层。根据该公报，通过设置保护层，防止在引线键合时芯片发生裂纹。另外，通过引线以及最上层都由Cu或者Cu合金构成，能良好地保持两者之间的接合。
现有技术文献
专利文献
专利文献1：日本特开2013-243166号公报
专利文献2：日本特开2014-082367号公报
发明内容
当针对上述专利文献2的结构应用了上述专利文献1的聚酰亚胺层作为保护膜时，使用由Cu或者Cu合金构成的层(以下还简称为“铜层”或者“Cu层”)与聚酰亚胺层接触的结构。在该情况下，在伴随半导体元件的动作而温度上升时，Cu原子扩散到聚酰亚胺层中。由此，元件特性以及可靠性可能发生劣化。特别，在半导体元件是作为处理大电流的元件的功率半导体元件的情况下，半导体元件的温度容易变高，所以容易产生上述扩散。另外，在半导体元件是作为能够在高温下动作的元件的SiC半导体元件的情况下，如果利用该特征而在高温下动作，则有可能显著发生上述扩散。
本发明是为了解决如以上的课题而完成的，其目的在于提供一种能够保持Cu引线的良好的接合、并且抑制Cu向作为保护膜的聚酰亚胺层中扩散所导致的可靠性劣化的电力用半导体装置及其制造方法。
本发明的电力用半导体装置具有半导体层、电极、聚酰亚胺层、铜层以及铜引线。电极设置于半导体层上。聚酰亚胺层具有配置于电极上的开口部、并且该聚酰亚胺层覆盖电极的边缘并延伸至电极上。铜层在开口部内设置于电极上，远离电极上的聚酰亚胺层。铜引线具有被接合到铜层上的一端。
本发明的电力用半导体装置的制造方法具有如下工序。在半导体层上形成电极。形成具有配置于电极上的开口部、并且、覆盖电极的边缘并延伸至电极上的聚酰亚胺层。在开口部内在电极上，形成远离电极上的聚酰亚胺层的铜层。在铜层上接合100μm以上的直径的铜引线的一端。针对从聚酰亚胺层离开比铜层的厚度的一半还大的距离的铜层，进行接合铜引线的一端的工序。
根据本发明的电力用半导体装置，铜引线被接合到铜层，所以能够保持良好的接合。另外，在引线键合后进行动作时，铜层远离聚酰亚胺层。由此，抑制在高温动作下Cu原子向聚酰亚胺层中的扩散。因此，能够抑制Cu扩散所导致的可靠性劣化。
根据本发明的电力用半导体装置的制造方法，铜引线被接合到铜层，所以能够保持良好的接合。另外，在引线键合前的时间点，铜层从聚酰亚胺层离开比铜层的厚度的一半还大的距离。由此，即使由于引线键合的冲击而铜层变形，仍能防止铜层接触到聚酰亚胺层。因此，抑制在高温动作下Cu原子向聚酰亚胺层中的扩散。因此，能够抑制Cu扩散所导致的可靠性劣化。
本发明的目的、特征、方案以及优点通过以下的详细的说明和附图将变得更加明确。
附图说明
图1是概略地示出本发明的实施方式1中的电力用半导体装置的结构的剖面图。
图2是概略地示出图1的电力用半导体装置具有的半导体元件的结构的部分剖面图。
图3是概略地示出图1的电力用半导体装置的制造方法的结构的一个例子的流程图。
图4是示出图1的变形例的剖面图。
图5是概略地示出本发明的实施方式2中的电力用半导体装置的结构的剖面图。
图6是概略地示出本发明的实施方式3中的电力用半导体装置的结构的剖面图。
(符号说明)
20：功率MOSFET(功率半导体元件)；1：Al电极(电极)；11：外延基板(半导体层)；12：聚酰亚胺层；13：Cu层(铜层)；14：Cu引线(铜引线)；15、15V：密封部；18、18V：氮化硅层；31、31V、32、33：功率模块。
具体实施方式
以下，根据附图，说明本发明的实施方式。
<实施方式1>
(结构)
参照图1，功率模块31(电力用半导体装置)具有功率MOSFET20(功率半导体元件)、聚酰亚胺层12、Cu层13(铜层)、Cu引线14(铜引线)以及密封部15。另外，在本实施方式中，功率模块31还具有隔着接合部16支撑功率MOSFET20的基体板17。功率MOSFET20具有外延基板11(半导体层)、和Al电极1(铝电极)。进而参照图2，在本实施方式中，功率MOSFET20具有背面电极4、栅极绝缘膜8、栅电极7以及层间绝缘膜6。
外延基板11由SiC制成。Al电极1设置于外延基板11上。
聚酰亚胺层12覆盖Al电极1的边缘，延伸至Al电极1上。聚酰亚胺层12具有配置于Al电极1上的开口部OP。聚酰亚胺层12从功率MOSFET20的芯片端延伸到Al电极1上。因此，聚酰亚胺层12还形成于功率MOSFET20的表面中的、Al电极1的周围的、未形成Al电极1的部分。换言之，聚酰亚胺层12形成于包围Al电极1的中心部的周围的元件周边区域上。聚酰亚胺层12具有作为保护元件周边区域的保护膜的功能。
Cu层13在聚酰亚胺层12的开口部OP内，设置于Al电极1上。Cu层13远离Al电极1上的聚酰亚胺层12。因此，Cu层13的宽度(在图中横向的尺寸)小于开口部OP的宽度。换言之，Cu层13在俯视时，小于开口部OP、并且包含于开口部OP。Cu层13的厚度(在图中纵向的尺寸)优选为10μm以上100μm以下。
Cu引线14具有一端、和另一端(未图示)。一端被接合在Cu层13上。另一端与功率MOSFET20的外部接合。由此，功率MOSFET20与外部电连接。能够根据电流的大小任意地决定Cu引线14的数量以及直径。作为面向功率MOSFET20等功率半导体元件的键合引线的Cu引线14为了能处理大的电流，通常具有100μm以上的直径。
密封部15对聚酰亚胺层12与Cu层13之间进行密封。优选，密封部15由硅酮系、环氧系以及酚系中的任意材料制成。
Al电极1由纯铝或者以铝为主成分的导体材料制成。“以铝为主成分的导体材料”是指，具体而言含有50重量％以上的Al的导体材料，典型地是铝合金。作为Al以外的元素、换言之添加元素，能够使用Si以及Cu等。Cu层13由纯铜或者以铜为主成分的导体材料制成。“以铜为主成分的导体材料”是指，具体而言含有50重量％以上的Cu的导体材料，典型地是铜合金。Cu引线14由纯铜或者以铜为主成分的导体材料制成。此外，也可以在Cu引线14的表面附加Al等金属或者有机物的涂层。
外延基板11具有单晶基板3、和设置于其上的外延层。该外延层具有漂移层2、基极区域9、源极区域5以及基极接触区域10。基极区域9设置于漂移层2的表面。源极区域5以及基极接触区域10设置于基极区域9内。基极区域9、源极区域5以及基极接触区域10能够通过向漂移层2进行离子注入、之后活性化退火来形成。
隔着栅极绝缘膜8，在外延基板11上，以与基极区域9相向的方式配置栅电极7。基极区域9中的隔着栅极绝缘膜8而与栅电极7相向的部分作为沟道区域发挥功能。在沟道区域中在ON(导通)动作时感应反型层。栅极绝缘膜8能够由氧化硅制成。栅电极7能够由多晶硅制成。
层间绝缘膜6覆盖栅电极7并且具有接触孔。Al电极1设置于层间绝缘膜6上，通过接触孔到达源极区域5以及基极接触区域10。层间绝缘膜6能够由氧化硅制成。
背面电极4设置于外延基板11的背面上、换言之单晶基板3的背面上。在功率MOSFET20中，作为漏电极的背面电极4和作为源电极的Al电极1沿着外延基板11的厚度方向、即纵向相向。因此，功率MOSFET20是垂直型半导体元件。
(制造方法)
以下，说明功率模块31的制造方法。
首先，功率MOSFET20通过通常的方法制造。此时，在外延基板11上形成Al电极1(图3：步骤S10)。
接下来，形成具有开口部OP并且覆盖Al电极1的边缘的聚酰亚胺层12(图3：步骤S20)。另外，在开口部OP内在Al电极1上，形成远离聚酰亚胺层12的Cu层13(图3：步骤S30)。这些工序的顺序是任意的。聚酰亚胺层12以及Cu层13相互分离地配置。具体而言，Cu层13与聚酰亚胺层12之间的距离DS(最短距离)设为比Cu层13的厚度的一半还大。
接下来，形成密封部15(图3：步骤S40)。此外，密封部15的形成可以省略。即，步骤S40可以省略。另外，步骤S40可以在后述步骤S50或者步骤S60之后进行。
接下来，进行功率MOSFET20的安装(图3：步骤S50)。具体而言，功率MOSFET20通过由焊料等构成的接合部16来与基体板17电气性并且机械性地接合。
接下来，进行功率MOSFET20的引线键合(图3：步骤S60)。由此，在Cu层13上接合Cu引线14的一端。针对从聚酰亚胺层12离开距离DS的Cu层，进行Cu引线14的一端的接合。距离DS如上所述大于Cu层13的厚度的一半。
由于引线键合的冲击，Cu层13可能朝向功率MOSFET20的端部变形。换言之，Cu层13可能以使Cu层13的边缘接近聚酰亚胺层12的方式变形。单纯地估算该变形量，最大为Cu层13的厚度程度。然而，本发明人在反复进行实验和评价后发现，该变形量小于Cu层13的厚度的一半。具体而言，为了研究Cu层的厚度和对其接合Cu引线时的Cu层的变形量的关系，进行针对隔开间隔配置的2个Cu层的一方键合Cu引线的实验。Cu层的厚度设为20μm以及30μm。间隔设为5、10、15、20、25以及30μm。在上述键合之后，根据有无电气导通，评价2个Cu层是否相互接触。表1示出其结果。
[表1]
根据上述结果可知，如果在厚度是20μm的情况下间隔设为10μm以上，在厚度是30μm的情况下间隔设为15μm以上，则能够避免由于变形所导致的接触。因此，通过使进行引线键合的Cu层13从聚酰亚胺层12离开比Cu层13的厚度的一半还大的距离，即使在产生引线键合所导致的变形之后，也能够避免Cu层13和聚酰亚胺层12的接触。因此，距离DS优选大于Cu层13的厚度的一半，但小于Cu层13的厚度为好。
此外，距离DS在键合后的时间点、即在功率模块31的完成后的时间点也大于Cu层13的厚度的一半为好。只要距离DS的设计具有充分的冗余，则满足该条件。
(效果)
根据本实施方式，Cu引线14与Cu层13接合，所以保持良好的接合。另外，在引线键合前的时间点，Cu层13从聚酰亚胺层12离开比Cu层13的厚度的一半还大的距离DS。由此，即使由于引线键合的冲击而Cu层13变形，仍能防止Cu层13与聚酰亚胺层12接触。因此，抑制在高温动作下Cu原子向聚酰亚胺层12中的扩散。因此，能够抑制Cu扩散所导致的可靠性劣化。具体而言，能够防止聚酰亚胺层12的保护性能劣化、发生元件漏电流等。因此，在功率模块31的制造中，成品率以及生产率提高。
功率模块31一般是处理比较大的电流的半导体装置。因此，功率模块31、特别是功率MOSFET20的温度容易变高。在这样的高温下，假设Cu层与聚酰亚胺层12接触，则Cu原子容易扩散到聚酰亚胺层12中。根据本实施方式，能够防止这样的扩散。
由于外延基板11由SiC制成，能够在高温下动作。在这样的高温下，假设Cu层与聚酰亚胺层12接触，则Cu原子可能显著扩散到聚酰亚胺层12中。根据本实施方式，能够防止这样的扩散。
通过设置密封部15，即使起因于与高温动作相伴的热应力或者外力等而Cu层13发生变形，仍能更可靠地防止Cu层13与聚酰亚胺层12接触。优选密封部15由硅酮系、环氧系以及酚系中的任意材料构成。Cu原子不易向这些材料中扩散。因此，能抑制Cu原子经由密封部15向聚酰亚胺层12的扩散。
由于Cu层13的厚度是10μm以上，能够有效地缓和在通过引线键合接合Cu引线14时对功率MOSFET20施加的冲击。由此，防止在键合时功率MOSFET20被破坏。即使Cu层13的厚度是100μm程度以下，仍能充分地得到该效果。在Cu层13的厚度超过100μm程度时，Cu层13的成膜所需的时间变得过度长，所以担心生产率的降低。
(变形例)
参照图4，变形例的功率模块31V(电力用半导体装置)具有密封部15V来代替密封部15(图1)。密封部15V不仅对聚酰亚胺层12与Cu层13之间进行密封，而且还覆盖功率MOSFET20的表面以及侧面的整体。另外，密封部15V覆盖Cu引线14的一端、即与Cu层13接合的端。在应用密封部15V的情况下，在步骤S60之后进行用于形成该密封部15V的步骤S40(图3)。此外，密封部15V的优选的材料与密封部15的情况相同。
也可以在功率模块31(图1)或者功率模块31V(图4)中，在Al电极1与Cu层13之间设置阻挡金属层。阻挡金属层例如能够由Ti、TiN、Ta、TaN、W、WN、或者TiW制成。
外延基板11(半导体层)的一部分或者整体也可以由SiC以外的半导体材料制成。例如，作为半导体材料，也可以使用Si。
在功率模块31(图1)或者功率模块31V(图4)中，不限于功率MOSFET，而能够设置任意的功率半导体元件。作为功率半导体元件，例如有晶体管以及二极管。作为晶体管，例如有具有绝缘栅电极的晶体管，具体而言，有MOSFET等MISFET(Metal InsulatorSemiconductor Field Effect Transisotor，金属绝缘体半导体场效应晶体管)以及IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极晶体管)。作为二极管，例如有肖特基势垒二极管、PN二极管等。
此外，上述变形例还能够应用于以下的实施方式2以及3。
<实施方式2>
参照图5，功率模块32(电力用半导体装置)具有氮化硅层18。在Al电极1上，部分地设置氮化硅层18。氮化硅层18从功率MOSFET20的芯片端延伸到Al电极1上。因此，氮化硅层18还形成于功率MOSFET20的表面中的、Al电极1的周围的、未形成Al电极1的部分。换言之，氮化硅层18形成于包围Al电极1的中心部的周围的元件周边区域上。氮化硅层18覆盖Al电极1的边缘。氮化硅层18具有配置于Al电极1上的开口部OQ。开口部OQ的宽度小于开口部OP的宽度。换言之，开口部OQ在俯视时，小于开口部OP并且被包含于开口部OP。
Cu层13在氮化硅层18上具有边缘。Cu层13的宽度大于开口部OQ的宽度。换言之，开口部OQ在俯视时小于铜层13并且被包含于铜层13。铜层13在开口部OQ内与Al电极1相接。聚酰亚胺层12配置于氮化硅层18上。
为了制造功率模块32，在用于制造功率模块31(图1)的工序中，追加形成氮化硅层18的工序即可。在Al电极1形成之后、且聚酰亚胺层12以及Cu层13形成之前，进行形成氮化硅层18的工序。
功率MOSFET20一般是处理比较大的电流的半导体元件。因此，具有比较大的元件面积。与其对应地，Cu层13的面积也比较大。另外，Cu层13的厚度需要大到足够缓和引线键合的冲击。因此，Cu层13具有大的面积和大的厚度。其结果，Cu层13易于具有大的应力。该应力特别易于集中到Cu层13的边缘之下。在假设该应力集中直接施加到Al电极1时，Al电极1可能发生裂纹。
根据本实施方式，在Cu层13的边缘与Al电极1之间设置氮化硅层18。由此，避免Al电极1发生上述应力集中。因此，能够防止Al电极1发生裂纹。
氮化硅层18的厚度优选为50nm以上2000nm以下。在厚度过小时，无法充分地保护Al电极1。相逆地，在厚度过大时，氮化硅层18的应力过度变大，其结果，外延基板11的翘曲变大。具有大的翘曲的外延基板11在自动搬送时引起问题等而难以处置。另外，具有外延基板11的功率MOSFET20也大幅翘曲，所以在功率MOSFET20的装配时易于发生不良。
上述以外的结构与上述实施方式1的结构大致相同，所以对同一或者对应的要素附加同一符号，不反复其说明。此外，在本实施方式中，也得到与实施方式1大致同样的效果。
<实施方式3>
参照图6，功率模块32(电力用半导体装置)具有氮化硅层18V。氮化硅层18V与氮化硅层18(图5：实施方式2)同样地，具有开口部OQ。因此，Cu层13在氮化硅层18V上具有边缘。氮化硅层18V的优选的厚度与氮化硅层18相同。
在俯视时，氮化硅层18V具有与氮化硅层18同样的配置。另一方面，在剖面视时(图6的视场)，两者的配置不同。具体而言，氮化硅层18配置于聚酰亚胺层12之下，但氮化硅层18V覆盖聚酰亚胺层12的上表面和侧面。由此，氮化硅层18V隔开聚酰亚胺层12与Cu层13之间。
为了制造功率模块33，在形成聚酰亚胺层12之后且形成Cu层13之前，进行形成氮化硅层18V的工序即可。除此以外的工序与制造功率模块31的情况相同即可。
根据本实施方式，在Cu层13与聚酰亚胺层12之间设置氮化硅层18V。由此，更可靠地防止Cu层13与聚酰亚胺层12接触。因此，更可靠地抑制在高温动作下Cu原子向聚酰亚胺层12中的扩散。因此，能够更可靠地抑制Cu扩散所导致的可靠性劣化。
上述以外的结构与上述实施方式2的结构大致相同，所以对同一或者对应的要素附加同一符号，不反复其说明。此外，在本实施方式中，也得到与实施方式2大致同样的效果。
本发明能够在该发明的范围内，自由地组合各实施方式或者将各实施方式适宜地变形、省略。虽然详细说明了本发明，但上述说明在所有方案中仅为例示，本发明不限于此。未例示的无数的变形例应被理解为不脱离本发明的范围而能被想到的方案。

Claims (8)

1.一种电力用半导体装置(31、31V、32、33)，具备：
半导体层(11)；
电极(1)，设置于所述半导体层(11)上；
聚酰亚胺层(12)，具有配置于所述电极(1)上的开口部(OP),且该聚酰亚胺层(12)覆盖所述电极(1)的边缘而延伸至所述电极(1)上；
铜层(13)，在所述开口部(OP)内设置于所述电极(1)上，与所述电极(1)上的所述聚酰亚胺层(12)分离；以及
铜引线(14)，具有被接合于所述铜层(13)上的一端。
2.根据权利要求1所述的电力用半导体装置(31、31V、32、33)，其特征在于，
所述铜层(13)与所述聚酰亚胺层(12)的距离(DS)大于所述铜层(13)的厚度的一半。
3.根据权利要求1或者2所述的电力用半导体装置(32、33)，其特征在于，
还具备氮化硅层(18、18V)，该氮化硅层(18、18V)部分地设置在所述电极(1)上，所述铜层(13)在所述氮化硅层(18、18V)上具有边缘。
4.根据权利要求1至3中的任意一项所述的电力用半导体装置(33)，其特征在于，
还具备氮化硅层(18V)，该氮化硅层(18V)将聚酰亚胺层(12)与铜层(13)之间隔开。
5.根据权利要求1至4中的任意一项所述的电力用半导体装置(31、31V、32、33)，其特征在于，
所述铜引线(14)具有100μm以上的直径。
6.根据权利要求1至5中的任意一项所述的电力用半导体装置(31、31V、32、33)，其特征在于，
还具备密封部,该密封部对所述聚酰亚胺层(12)与所述铜层(13)之间进行密封，所述密封部由硅酮系、环氧系以及酚系中的任意材料制成。
7.根据权利要求1至6中的任意一项所述的电力用半导体装置(31、31V、32、33)，其特征在于，
所述半导体层(11)的至少一部分由碳化硅制成。
8.一种电力用半导体装置(31、31V、32、33)的制造方法，具备：
在半导体层(11)上形成电极(1)的工序；
形成聚酰亚胺层(12)的工序，该聚酰亚胺层(12)具有配置于所述电极(1)上的开口部(OP)，且该聚酰亚胺层(12)覆盖所述电极(1)的边缘而延伸至所述电极(1)上；
在所述开口部(OP)内在所述电极(1)上，形成与所述电极(1)上的所述聚酰亚胺层(12)分离的铜层(13)的工序；以及
在所述铜层(13)上接合100μm以上的直径的铜引线(14)的一端的工序，
针对从所述聚酰亚胺层(12)离开比所述铜层(13)的厚度的一半还大的距离(DS)的所述铜层(13)，进行接合所述铜引线(14)的所述一端的工序。
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