CN1090344A - 立式舟形架和晶片支承件 - Google Patents
立式舟形架和晶片支承件 Download PDFInfo
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- CN1090344A CN1090344A CN93112769A CN93112769A CN1090344A CN 1090344 A CN1090344 A CN 1090344A CN 93112769 A CN93112769 A CN 93112769A CN 93112769 A CN93112769 A CN 93112769A CN 1090344 A CN1090344 A CN 1090344A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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- Packaging Of Annular Or Rod-Shaped Articles, Wearing Apparel, Cassettes, Or The Like (AREA)
Abstract
一种在立式扩散炉中支承和装载半导体晶片材
料用的立式支架或舟形架装置。该装置由支架或舟
形架以及装配到舟形架中的晶片支承环构成。
Description
本发明涉及用来制造半导体器件的立式扩散炉,更具体地说,关系到用于装载半导体基底的支架或舟形架和这种基底的支承机构。
在制造象二极管,三极管和集成电路那样的半导体器件的过程中牵涉到材料薄层,例如,在硅晶片上的材料薄层的高温氧化,扩散和/或沉积。这种加工已在美国专利号3,436,255,4,761,134和4,802,842中所述的各种类型设备中得到实现。
第一个专利涉及对硅晶片或类似物质的处理,这种处理首先将晶片置于一耐熔支架或舟形架上,接着,将支架或舟形架装在输送带或装载装置上并将它们依序放入到一加工管道中。然后,把整个装置运送入一提供加热和合适气体的卧式马弗炉中。
第二个专利是一外延(晶体取向接长的)沉积炉用的、由石墨制成的加热元件。加热元件形状基本上为扁平和矩形的,待处理的晶片被安放在石墨加热元件表面的凹槽或凹陷部中,凹陷部仅具有略大于待加工晶片的直径。在一个实施例中,凹槽或凹陷部设有一直径比凹槽直径略微小的台肩;这个实施例中,晶片搁靠在该台肩上。此外,公开了用于固定晶片的支承环,该支承环具有与加热元件的凹槽相配合的尺寸和形状。
美国专利号4,802,842涉及在更新型的扩散炉中固定半导体晶片材料的支架或舟形架,此扩散炉为一立式定向炉和反应室类型而不是美国专利4,761,134中所述那样的较旧的卧式炉类型。如从图1、2和3中可明显地看到,有关的参考材料所披露的是一种垂直放时,这些杆子具有将硅晶片插入其中的切槽或具有将晶片放在其上的突出部,因而,可将装有晶片的支架或舟形架放入一立式炉中。尽管这种方式舟形架比起现有技术来明显是一种改进,但是它的确呈现一严重的缺陷,也就是,因为晶片仅受到三个相当小的表面支持,由于在晶片的边缘上有效点接触的结果,在加工过程中所获得的晶片至少会显露出受相当大的压力/拉力,有时甚至会变形。这就是本发明将要消除的特殊问题。
本发明是一加工半导体材料的晶片用的耐熔舟形架和配套的支承件。舟形架是直立型的,即,适于装入-立式扩散炉中的构形,并且它由象高纯度烧结型碳化硅,渗硅的碳化硅,氮化硅,石英,氧化铝或氧化锆那样的高纯度难熔材料、以及包括前述任一涂有碳化硅,氮化硅或诸如此类的高纯度不渗透涂层材料所制成的。晶片支承件最好由同舟形架一样的材料构成,它特别适合于与立式舟形架相配合和承载象硅那样的半导体材料的晶片。晶片支承件最简便是难熔材料制的圆环,圆环可以是开口的或实心的。不过,支承件可以是一种实心盘且可以是除了圆以外的其它一些形状,例如,六角形,或甚至矩形,只要舟形架的结构能接受这种外形即可。
图1是-加工半导体晶片材料用的,包括晶片支承件在内的舟形架装置的立面侧视图;
图2是-以图1的2-2线所作的图1舟形架装置的截面俯视图。
请参阅附图,根据本发明,图1是-表示舟形架本身1和晶片支承环5的舟型架装置。舟形架1是由一顶板3,一底板4和至少二根而最好三根垂直杆或棒2构成的,诸杆或棒与底板4和顶板3连接(接合)。杆或棒2设有一系列切槽,它们与底板4等距离地隔开且具有基本上按水平位置可接纳和固定晶片支承环的尺寸。尽管附图示出了在杆2中作为切槽6的晶片支承环保持机构,但是这种保持机构也可是各杆上的突起或突出部,甚至是向内朝着舟形架1的中心的销钉。
图1中的晶片支承环5,其中设有一凹陷部7,凹陷部直径上只略大于待装载的晶片的直径。凹陷部(凹槽)最好有着足以防止晶片从支承件上移离的适当深度,而如果需要的话,凹陷部可以做得更深一些。图2表示一通过图1的舟形架1所作的截面图,它更为详尽地显示了晶片支承环5及其与舟形架1的相互配合情况。环5是一开口环。开口的目的是为了便于把晶片支承环5以及其上所安放的晶片自动装运到杆2的切槽6中。但是,开口环5可以是一种实心环,或者甚至是一种与环不同的盘构成。在图1和2中所示的最佳支承环5包括一所示的凹槽7。虽然这是一更符合需要的构形,但环的上表面可以是齐平的,也就是说,可不含有凹陷部或凹槽。假如晶片的两侧要进行处理,盘形结构就不是最适宜的支承件。一更加好的晶片支持件结构将包括一个或多个图2所示的晶片支承环5中的对准切口8。切口8的宽度必须略大于垂直棒或杆2的宽度。图1和2中所示的舟形架1,具有只能容纳8个晶片支承环5的尺寸。实际上,舟形架可以是已知立式炉可接受的任一长度。同样,图1和2的舟形架1和晶片支承环5相结合的简化结构不可看做在其方式上的限定。舟形架较好地具有一圆形横截面,也可以是六角形的,八角形的,甚至是矩形的带有互补形状的晶片支承件5。例如,舟形架1可以由作为顶板3的一部分或固定到顶板3上的一环组成,以便于将舟形架装置和晶片往下放到感应电炉的机械化。
Claims (10)
1、一种立式半导体晶片炉用的扩散炉舟形架装置包括晶片支承件、一立式舟形架以及以分离的方式固定多个所述晶片承件的装置,所述舟形架和晶片支承件是由高纯度难熔材料构成的。
2、根据权利要求1所述的舟形架装置,其特征在于所述晶片支承件是呈实心环的形状。
3、根据权利要求1所述的舟形架装置,其特征在于所述晶片支承件是呈开口环的形状。
4、根据权利要求1或2或3所述舟形架装置,其特征在于所述立式舟形架和所述晶片支承件是由选自由碳化硅,渗硅的碳化硅,其上涂有抗渗的难熔涂层的碳化硅,其上渗有硅且涂有抗渗难熔涂层的碳化硅,石英,氮化硅和氧化锆组成的组中的一种材料构成的。
5、一种在扩散炉中与舟形架一起使用的晶片支承件,其特征在于所述晶片支承件具有一与其宽度相比的薄的横断面。
6、根据权利要求5所述的晶片支承件,其特征在于所述晶片承件为一实心盘。
7、根据权利要求6所述的晶片支承件,其特征在于其中具有一放置晶片的凹槽。
8、根据权利要求5所述的晶片支承件,其特征在于所述晶片支承件为一连续环。
9、根据权利要求5所述的晶片支承件,其特征在于所述晶片支承件为一开口环。
10、根据权利要求5,6,7,8或9的任一的晶片支承件,其特征在于所述晶片支承件由选自由碳化硅,渗硅的碳化硅,其上带不渗透难熔涂层的碳化硅,渗硅及带有抗渗难熔涂层的碳化硅,石英,氮化硅及氧化锆的组成的组中的一种材料构成。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98616192A | 1992-12-03 | 1992-12-03 | |
US07/986,161 | 1992-12-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1090344A true CN1090344A (zh) | 1994-08-03 |
Family
ID=25532141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN93112769A Pending CN1090344A (zh) | 1992-12-03 | 1993-12-03 | 立式舟形架和晶片支承件 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0600516A1 (zh) |
JP (1) | JPH0778777A (zh) |
KR (1) | KR940016668A (zh) |
CN (1) | CN1090344A (zh) |
CA (1) | CA2109654A1 (zh) |
NO (1) | NO934238L (zh) |
TW (1) | TW242196B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101018885B (zh) * | 2004-08-24 | 2010-07-14 | 圣戈本陶瓷及塑料股份有限公司 | 半导体加工部件及用该部件进行的半导体加工 |
US7778556B2 (en) | 2006-03-27 | 2010-08-17 | Sharp Kabushiki Kaisha | Toner supply device, image forming apparatus and toner shortage detecting method |
CN102231406A (zh) * | 2011-06-24 | 2011-11-02 | 苏州凯西石英电子有限公司 | 一种用于太阳能电池硅片生产的石英舟 |
CN106298616A (zh) * | 2015-06-04 | 2017-01-04 | 有研半导体材料有限公司 | 一种硅片承载部件及降低高温退火片体金属含量的方法 |
CN107527971A (zh) * | 2017-08-14 | 2017-12-29 | 深圳市拉普拉斯能源技术有限公司 | 一种硅片扩散装置及硅片插片方法 |
CN107954719A (zh) * | 2017-10-31 | 2018-04-24 | 苏州纳朴材料科技有限公司 | 一种用于LED外延晶圆制程的SiC承载盘制备方法 |
CN108475650A (zh) * | 2015-12-04 | 2018-08-31 | 洛克系统私人有限公司 | 改善的基底加工和装置 |
CN108800953A (zh) * | 2018-08-24 | 2018-11-13 | 洛阳恒立窑炉有限公司 | 一种管式电窑炉的料舟与加热管配合结构 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2732224B2 (ja) * | 1994-09-30 | 1998-03-25 | 信越半導体株式会社 | ウエーハ支持ボート |
US5618351A (en) * | 1995-03-03 | 1997-04-08 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
KR100234530B1 (ko) * | 1996-08-23 | 1999-12-15 | 윤종용 | 반도체 웨이퍼 보트 |
US6395363B1 (en) * | 1996-11-05 | 2002-05-28 | Applied Materials, Inc. | Sloped substrate support |
JP3377996B1 (ja) * | 2001-12-27 | 2003-02-17 | 東京エレクトロン株式会社 | 熱処理用ボート及び縦型熱処理装置 |
KR100492977B1 (ko) * | 2002-12-12 | 2005-06-07 | 삼성전자주식회사 | 다공성 실리카 박막의 소결을 위한 웨이퍼 보트 |
US7727588B2 (en) * | 2003-09-05 | 2010-06-01 | Yield Engineering Systems, Inc. | Apparatus for the efficient coating of substrates |
KR100657501B1 (ko) * | 2004-08-19 | 2006-12-13 | 주식회사 테라세미콘 | 고온공정용 반도체 제조공정에서의 웨이퍼 지지방법 및고온공정용 반도체 제조장치의 웨이퍼 홀더 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4386255A (en) * | 1979-12-17 | 1983-05-31 | Rca Corporation | Susceptor for rotary disc reactor |
JPS60152675A (ja) * | 1984-01-20 | 1985-08-10 | Toshiba Mach Co Ltd | 縦型拡散炉型気相成長装置 |
JPS61191015A (ja) * | 1985-02-20 | 1986-08-25 | Hitachi Ltd | 半導体の気相成長方法及びその装置 |
-
1993
- 1993-11-22 TW TW082109804A patent/TW242196B/zh active
- 1993-11-22 CA CA002109654A patent/CA2109654A1/en not_active Abandoned
- 1993-11-23 NO NO934238A patent/NO934238L/no unknown
- 1993-11-30 KR KR1019930025771A patent/KR940016668A/ko not_active Application Discontinuation
- 1993-12-02 JP JP5302491A patent/JPH0778777A/ja active Pending
- 1993-12-03 EP EP93119553A patent/EP0600516A1/en not_active Withdrawn
- 1993-12-03 CN CN93112769A patent/CN1090344A/zh active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101018885B (zh) * | 2004-08-24 | 2010-07-14 | 圣戈本陶瓷及塑料股份有限公司 | 半导体加工部件及用该部件进行的半导体加工 |
US7778556B2 (en) | 2006-03-27 | 2010-08-17 | Sharp Kabushiki Kaisha | Toner supply device, image forming apparatus and toner shortage detecting method |
CN102231406A (zh) * | 2011-06-24 | 2011-11-02 | 苏州凯西石英电子有限公司 | 一种用于太阳能电池硅片生产的石英舟 |
CN106298616A (zh) * | 2015-06-04 | 2017-01-04 | 有研半导体材料有限公司 | 一种硅片承载部件及降低高温退火片体金属含量的方法 |
CN108475650A (zh) * | 2015-12-04 | 2018-08-31 | 洛克系统私人有限公司 | 改善的基底加工和装置 |
CN108475650B (zh) * | 2015-12-04 | 2022-07-12 | 洛克系统私人有限公司 | 改善的基底加工和装置 |
CN107527971A (zh) * | 2017-08-14 | 2017-12-29 | 深圳市拉普拉斯能源技术有限公司 | 一种硅片扩散装置及硅片插片方法 |
CN107954719A (zh) * | 2017-10-31 | 2018-04-24 | 苏州纳朴材料科技有限公司 | 一种用于LED外延晶圆制程的SiC承载盘制备方法 |
CN108800953A (zh) * | 2018-08-24 | 2018-11-13 | 洛阳恒立窑炉有限公司 | 一种管式电窑炉的料舟与加热管配合结构 |
CN108800953B (zh) * | 2018-08-24 | 2024-05-17 | 宁波市北仑区汉朝模具科技有限公司 | 一种管式电窑炉的料舟与加热管配合结构 |
Also Published As
Publication number | Publication date |
---|---|
TW242196B (zh) | 1995-03-01 |
EP0600516A1 (en) | 1994-06-08 |
NO934238L (no) | 1994-06-06 |
CA2109654A1 (en) | 1994-06-04 |
KR940016668A (ko) | 1994-07-23 |
NO934238D0 (no) | 1993-11-23 |
JPH0778777A (ja) | 1995-03-20 |
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