NO934238D0 - Stativ for skiver av halvledere - Google Patents

Stativ for skiver av halvledere

Info

Publication number
NO934238D0
NO934238D0 NO934238A NO934238A NO934238D0 NO 934238 D0 NO934238 D0 NO 934238D0 NO 934238 A NO934238 A NO 934238A NO 934238 A NO934238 A NO 934238A NO 934238 D0 NO934238 D0 NO 934238D0
Authority
NO
Norway
Prior art keywords
semiconductor disc
disc stand
stand
semiconductor
disc
Prior art date
Application number
NO934238A
Other languages
English (en)
Other versions
NO934238L (no
Inventor
Stephen E Proia
Bryan D Foster
Original Assignee
Saint Gobain Norton Ind Cerami
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Norton Ind Cerami filed Critical Saint Gobain Norton Ind Cerami
Publication of NO934238D0 publication Critical patent/NO934238D0/no
Publication of NO934238L publication Critical patent/NO934238L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Packaging Of Annular Or Rod-Shaped Articles, Wearing Apparel, Cassettes, Or The Like (AREA)
NO934238A 1992-12-03 1993-11-23 Stativ for skiver av halvledere NO934238L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98616192A 1992-12-03 1992-12-03

Publications (2)

Publication Number Publication Date
NO934238D0 true NO934238D0 (no) 1993-11-23
NO934238L NO934238L (no) 1994-06-06

Family

ID=25532141

Family Applications (1)

Application Number Title Priority Date Filing Date
NO934238A NO934238L (no) 1992-12-03 1993-11-23 Stativ for skiver av halvledere

Country Status (7)

Country Link
EP (1) EP0600516A1 (no)
JP (1) JPH0778777A (no)
KR (1) KR940016668A (no)
CN (1) CN1090344A (no)
CA (1) CA2109654A1 (no)
NO (1) NO934238L (no)
TW (1) TW242196B (no)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2732224B2 (ja) * 1994-09-30 1998-03-25 信越半導体株式会社 ウエーハ支持ボート
US5618351A (en) * 1995-03-03 1997-04-08 Silicon Valley Group, Inc. Thermal processing apparatus and process
KR100234530B1 (ko) * 1996-08-23 1999-12-15 윤종용 반도체 웨이퍼 보트
US6395363B1 (en) * 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
JP3377996B1 (ja) * 2001-12-27 2003-02-17 東京エレクトロン株式会社 熱処理用ボート及び縦型熱処理装置
KR100492977B1 (ko) * 2002-12-12 2005-06-07 삼성전자주식회사 다공성 실리카 박막의 소결을 위한 웨이퍼 보트
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
KR100657501B1 (ko) * 2004-08-19 2006-12-13 주식회사 테라세미콘 고온공정용 반도체 제조공정에서의 웨이퍼 지지방법 및고온공정용 반도체 제조장치의 웨이퍼 홀더
CN101018885B (zh) * 2004-08-24 2010-07-14 圣戈本陶瓷及塑料股份有限公司 半导体加工部件及用该部件进行的半导体加工
JP4368356B2 (ja) 2006-03-27 2009-11-18 シャープ株式会社 画像形成装置および画像形成装置のトナー容器離脱方法
CN102231406A (zh) * 2011-06-24 2011-11-02 苏州凯西石英电子有限公司 一种用于太阳能电池硅片生产的石英舟
CN106298616B (zh) * 2015-06-04 2019-12-13 有研半导体材料有限公司 一种硅片承载部件及降低高温退火片体金属含量的方法
SG10201509996UA (en) * 2015-12-04 2017-07-28 Rokko Systems Pte Ltd Improved substrate processing and apparatus
CN107527971A (zh) * 2017-08-14 2017-12-29 深圳市拉普拉斯能源技术有限公司 一种硅片扩散装置及硅片插片方法
CN107954719A (zh) * 2017-10-31 2018-04-24 苏州纳朴材料科技有限公司 一种用于LED外延晶圆制程的SiC承载盘制备方法
CN108800953B (zh) * 2018-08-24 2024-05-17 宁波市北仑区汉朝模具科技有限公司 一种管式电窑炉的料舟与加热管配合结构

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4386255A (en) * 1979-12-17 1983-05-31 Rca Corporation Susceptor for rotary disc reactor
JPS60152675A (ja) * 1984-01-20 1985-08-10 Toshiba Mach Co Ltd 縦型拡散炉型気相成長装置
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置

Also Published As

Publication number Publication date
TW242196B (no) 1995-03-01
NO934238L (no) 1994-06-06
KR940016668A (ko) 1994-07-23
JPH0778777A (ja) 1995-03-20
CN1090344A (zh) 1994-08-03
CA2109654A1 (en) 1994-06-04
EP0600516A1 (en) 1994-06-08

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