CA2109654A1 - Vertical boat and wafer support - Google Patents
Vertical boat and wafer supportInfo
- Publication number
- CA2109654A1 CA2109654A1 CA002109654A CA2109654A CA2109654A1 CA 2109654 A1 CA2109654 A1 CA 2109654A1 CA 002109654 A CA002109654 A CA 002109654A CA 2109654 A CA2109654 A CA 2109654A CA 2109654 A1 CA2109654 A1 CA 2109654A1
- Authority
- CA
- Canada
- Prior art keywords
- wafer
- boat
- wafer support
- silicon carbide
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- 239000011819 refractory material Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 abstract description 39
- 238000010438 heat treatment Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241001300938 Brya Species 0.000 description 1
- 240000007049 Juglans regia Species 0.000 description 1
- 235000009496 Juglans regia Nutrition 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000020234 walnut Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Furnace Charging Or Discharging (AREA)
- Packaging Of Annular Or Rod-Shaped Articles, Wearing Apparel, Cassettes, Or The Like (AREA)
- Packaging Frangible Articles (AREA)
Abstract
ABSTRACT OF THE DISCLOSURE
A vertical rack or boat assembly for supporting and carrying semi-conductor material wafers in a vertical diffusion furnace, the assembly being made up of rack or boat and wafer support rings which fit into the boat.
A vertical rack or boat assembly for supporting and carrying semi-conductor material wafers in a vertical diffusion furnace, the assembly being made up of rack or boat and wafer support rings which fit into the boat.
Description
21~5~
Docket c-2s4a 93RTICAL BO~ ~?D WAFER SUPPORT
~tephen ~. Proia 13 Watson Avenue Worcester, Massachusetts 01606 Brya~ D. Foster 22 Walnut Street Holden, Massachusetts 01520 BACRGROUND OF THE INVENTION
Fi ~1 d ?~.,?~E the Invention The invention relates to vertical diffusion furnace~ used to manufacture semi-conductor devices and more particularly, racks or boats used to carry semi-conductor substrates and support means for such substrates.
Descri~tion of the Prior ~rt One phase in the manufacture of semi-conductor devices such as diodes, transistors, and integrated circuits involves the high temperature oxidation, diffusion and/or deposition of thin layers of materials on, for example, silicon wafers. Such processing has been carried out in a variety of equipment types such as those described in U.S.
Patents No. 3,436,255; No. 4,761,134; and No. 4,~02,842.
The first patent concerns the treatment of silicon wafers or the like by first placing the wafers in a refractory rack or boat, which is then located on a transporter or carriex which in turn is pla~ed into a process tube. This entire assembly is then moved into a horizontal muffle furnace which is supplied with heat and the appropriate gas.
The second pakent is a heating element, made of graphite, for an epitaxial deposition furnace. The heating element is essentially flat and rectangular in shape with 0~6~
the wafers to be treated being placed in recesses or depressions in the surface of the graphite heating element, the depressions having a diamater only slightly larger than the diameter of the wafers to be processed. In one embodiment, the recesses or depressions have a shoulder of a somewhat smaller diameter than that of the recess; in this embodiment the wafers rest on the shoulder. Support rings for holding the wafers are also disclosed, the support rings being of a size and configuration to fit into the recesses in the heating element.
U.S. Patent No. 4,802,842 relates to a rack or boat for holding semi-conductor wafer material in the newer type of diffusion furnace which is a vertically oriented furnace and reaction chamber rather than the older type horizontal furnace such as that described in U.S. Patent No.
4,761,134. As is evident from Figures 1, 2, and 3, the relevant disclosure of the reference is a boat or rack which stands vertically, made up of at least three posts with either slots in the posts into which silicon wafers are inserted, or protrusions on the posts upon which the wafers sit during processing, the boat or rack carrying the wafers having been inserted into a vertical furnace. While this vertical boat is clearly an improvement over the prior art, it does exhibit one serious shortcoming viz. because the wafers are supported only on three relatively small surfaces, the resulting wafers emer~e from the process at least substantially stressed/strained and sometimes even distorted as a result of such effectivaly point contact on the edge of the wafers. It is this specific problem which the present invention eliminates.
SUMMARY OF THE INVENTION
The invention is a refractory boat and mating supports for the processing of wafers of semi-conductor materialO The boat is of the vertical type, i.e. configured to fit into a vertical diffusion furnace, and is made up of 2 ~
a high purity refractory material such as high purity sintered silicon carbide, silicon impregnated sili.con carbide, silicon nitride, quartz, alumina, or zirconia, and including any o~ the foregoing coated with a high purity impervious coating of silicon carbide, silicon nitride~ or the like. The wafer supports which are preferably composed of the same material as the boat, are especially adapted to fit into the vertical boat and to carry wafers of semi-conductor material such as silicon. The wafer supports are most conveniently round rings of refractory material which may be split or solid. However, the supports may be a solid disc and may be shapes other tha.n round, e.g. hexagonal, or even square, if the design of the boat will accept such configurations.
BRIEF DESCRIPTION OF THE DRAWING
Figure 1 is an elevated side view of a boat assembly for processing semi-conductor materials wafers, including wafer supports.
Figure 2 is a sectional top view of the boat assembly of Figure 1, taken on line 2-2 of Figure 1.
DETAILED DESCRIPTION OF THE INVENTION
Re~erring to the drawing, Figure 1 is a boat assembly according to the invention, showing the boat per se as 1, wafer supports 5. The boat 1 is made up of a top plate 3, a bottom plate 4, and at least two and preferably three vertical posts or rods 2 which are joined to both bottom plate 4 and top plate 3. The rods or posts 2 include a series of slots 6 which are spaced equidistantly from the ~ottom plate 4 and are of such a dimension that they will accept and retain wafer support rings 5 in an essentially horizontal position. While the drawing shows the wafer support ring retaining means in the post 2 as slots 6, these retaining means could also be protrusions or ledges on each post, or even pins directed inwardly toward the center of the boat lo 2:L0~6~
The wafer support ring 5 in Figure 1 has a depression 7 therein which is jUSt slightly larger in diameter than the wafer which it is to carry. The depth o~
the recess is preferably just deep enough to prevent the wafer from moving on the support but may be deeper if desired. Figure 2 shows a section through the boat 1 of Figure 1 which presents the wafer support 5 in more detail and its interaction with the boat 1. The ring 5 is a split ring. The purpose of the split is to facilitate the robotic loading of the wafer support 5, and a wafer positioned thereon, into the slots 6 in the posts 2. The split ring 5 could therefor be a solid ring or even a disc as opposed to a ring. The preferred support ring 5 shown in Figures 1 and 2 includes a recess 7 as shown. While this is the more desirable configuration, the ring may be flush on its upper surface, i.e. free of any depression or recess. If both sides of the wafer are to be treated, a disc would not be the most effective support. A still more preferable wafer support desiyn would include one or more aligning notches 8 shown in the wafer support ring 5 in Figure 20 The notches 8 must be slightly larger in width than the width of the vertical rods or posts 2.
The boat 1 shown in Figures 1 and 2 is of such a size as to accommodate only eight wafer support rings 5.
The boat, in fact, may be of any length that a given vertical furnace will accept. Similarly, the simple design of the boat 1 and wafer support 5 combination of Figur~s and 2 are not to be considered as limiting in any manner.
The boat which preferentially has a round cross section, could be hexagonal, octagonal, or even s~uare, with complimentarily shaped wafer supports. The boat 1 may include, ~or example, a ring as part of or attached to top plate 3 to facilitate mechanized lowering of the boat assembly and wafers into an induction furnace.
Docket c-2s4a 93RTICAL BO~ ~?D WAFER SUPPORT
~tephen ~. Proia 13 Watson Avenue Worcester, Massachusetts 01606 Brya~ D. Foster 22 Walnut Street Holden, Massachusetts 01520 BACRGROUND OF THE INVENTION
Fi ~1 d ?~.,?~E the Invention The invention relates to vertical diffusion furnace~ used to manufacture semi-conductor devices and more particularly, racks or boats used to carry semi-conductor substrates and support means for such substrates.
Descri~tion of the Prior ~rt One phase in the manufacture of semi-conductor devices such as diodes, transistors, and integrated circuits involves the high temperature oxidation, diffusion and/or deposition of thin layers of materials on, for example, silicon wafers. Such processing has been carried out in a variety of equipment types such as those described in U.S.
Patents No. 3,436,255; No. 4,761,134; and No. 4,~02,842.
The first patent concerns the treatment of silicon wafers or the like by first placing the wafers in a refractory rack or boat, which is then located on a transporter or carriex which in turn is pla~ed into a process tube. This entire assembly is then moved into a horizontal muffle furnace which is supplied with heat and the appropriate gas.
The second pakent is a heating element, made of graphite, for an epitaxial deposition furnace. The heating element is essentially flat and rectangular in shape with 0~6~
the wafers to be treated being placed in recesses or depressions in the surface of the graphite heating element, the depressions having a diamater only slightly larger than the diameter of the wafers to be processed. In one embodiment, the recesses or depressions have a shoulder of a somewhat smaller diameter than that of the recess; in this embodiment the wafers rest on the shoulder. Support rings for holding the wafers are also disclosed, the support rings being of a size and configuration to fit into the recesses in the heating element.
U.S. Patent No. 4,802,842 relates to a rack or boat for holding semi-conductor wafer material in the newer type of diffusion furnace which is a vertically oriented furnace and reaction chamber rather than the older type horizontal furnace such as that described in U.S. Patent No.
4,761,134. As is evident from Figures 1, 2, and 3, the relevant disclosure of the reference is a boat or rack which stands vertically, made up of at least three posts with either slots in the posts into which silicon wafers are inserted, or protrusions on the posts upon which the wafers sit during processing, the boat or rack carrying the wafers having been inserted into a vertical furnace. While this vertical boat is clearly an improvement over the prior art, it does exhibit one serious shortcoming viz. because the wafers are supported only on three relatively small surfaces, the resulting wafers emer~e from the process at least substantially stressed/strained and sometimes even distorted as a result of such effectivaly point contact on the edge of the wafers. It is this specific problem which the present invention eliminates.
SUMMARY OF THE INVENTION
The invention is a refractory boat and mating supports for the processing of wafers of semi-conductor materialO The boat is of the vertical type, i.e. configured to fit into a vertical diffusion furnace, and is made up of 2 ~
a high purity refractory material such as high purity sintered silicon carbide, silicon impregnated sili.con carbide, silicon nitride, quartz, alumina, or zirconia, and including any o~ the foregoing coated with a high purity impervious coating of silicon carbide, silicon nitride~ or the like. The wafer supports which are preferably composed of the same material as the boat, are especially adapted to fit into the vertical boat and to carry wafers of semi-conductor material such as silicon. The wafer supports are most conveniently round rings of refractory material which may be split or solid. However, the supports may be a solid disc and may be shapes other tha.n round, e.g. hexagonal, or even square, if the design of the boat will accept such configurations.
BRIEF DESCRIPTION OF THE DRAWING
Figure 1 is an elevated side view of a boat assembly for processing semi-conductor materials wafers, including wafer supports.
Figure 2 is a sectional top view of the boat assembly of Figure 1, taken on line 2-2 of Figure 1.
DETAILED DESCRIPTION OF THE INVENTION
Re~erring to the drawing, Figure 1 is a boat assembly according to the invention, showing the boat per se as 1, wafer supports 5. The boat 1 is made up of a top plate 3, a bottom plate 4, and at least two and preferably three vertical posts or rods 2 which are joined to both bottom plate 4 and top plate 3. The rods or posts 2 include a series of slots 6 which are spaced equidistantly from the ~ottom plate 4 and are of such a dimension that they will accept and retain wafer support rings 5 in an essentially horizontal position. While the drawing shows the wafer support ring retaining means in the post 2 as slots 6, these retaining means could also be protrusions or ledges on each post, or even pins directed inwardly toward the center of the boat lo 2:L0~6~
The wafer support ring 5 in Figure 1 has a depression 7 therein which is jUSt slightly larger in diameter than the wafer which it is to carry. The depth o~
the recess is preferably just deep enough to prevent the wafer from moving on the support but may be deeper if desired. Figure 2 shows a section through the boat 1 of Figure 1 which presents the wafer support 5 in more detail and its interaction with the boat 1. The ring 5 is a split ring. The purpose of the split is to facilitate the robotic loading of the wafer support 5, and a wafer positioned thereon, into the slots 6 in the posts 2. The split ring 5 could therefor be a solid ring or even a disc as opposed to a ring. The preferred support ring 5 shown in Figures 1 and 2 includes a recess 7 as shown. While this is the more desirable configuration, the ring may be flush on its upper surface, i.e. free of any depression or recess. If both sides of the wafer are to be treated, a disc would not be the most effective support. A still more preferable wafer support desiyn would include one or more aligning notches 8 shown in the wafer support ring 5 in Figure 20 The notches 8 must be slightly larger in width than the width of the vertical rods or posts 2.
The boat 1 shown in Figures 1 and 2 is of such a size as to accommodate only eight wafer support rings 5.
The boat, in fact, may be of any length that a given vertical furnace will accept. Similarly, the simple design of the boat 1 and wafer support 5 combination of Figur~s and 2 are not to be considered as limiting in any manner.
The boat which preferentially has a round cross section, could be hexagonal, octagonal, or even s~uare, with complimentarily shaped wafer supports. The boat 1 may include, ~or example, a ring as part of or attached to top plate 3 to facilitate mechanized lowering of the boat assembly and wafers into an induction furnace.
Claims (10)
1. A diffusion furnace boat assembly for a vertical semi-conductor wafer furnace comprising wafer supports and a vertical boat with means for maintaining a plurality of said wafer supports in a separated manner, said boat and wafer supports being composed of a high purity refractory material.
2. The boat assembly of Claim 1 wherein said wafer supports are in the form of a solid ring.
3. The boat assembly of Claim 1 wherein said wafer supports are in the form of a split ring.
4. The boat assembly of any one of Claims 1, 2, or 3, wherein said vertical boat and said wafer supports are composed of a material selected from the group consisting of silicon carbide, silicon impregnated silicon carbide, silicon carbide with an impervious refractory coating thereon, silicon impregnated silicon carbide with an impervious refractory coating thereon, quartz, silicon nitride, and zirconium oxide.
5. A wafer support for use in conjunction with a boat in a diffusion furnace said wafer support having a thin cross section relative to its width.
6. The wafer support of Claim 5, said wafer support being a solid disc.
7. The wafer support of Claim 6, having a recess therein which accommodates a wafer.
8. The wafer support of Claim 5, said wafer support being a continuous ring.
9. The wafer support of Claim 5, said wafer support being a split ring.
10. The wafer support of any one of Claims 5, 6, 7, 8, or 9, wherein said wafer support is composed of a material selected from the group consisting of silicon carbide, silicon impregnated silicon carbide, silicon carbide with an impervious refractory coating thereon, silicon impregnated silicon carbide with an impervious refractory coating thereon, quartz, silicon nitride, and zirconium oxide.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98616192A | 1992-12-03 | 1992-12-03 | |
| US07/986,161 | 1992-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2109654A1 true CA2109654A1 (en) | 1994-06-04 |
Family
ID=25532141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002109654A Abandoned CA2109654A1 (en) | 1992-12-03 | 1993-11-22 | Vertical boat and wafer support |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0600516A1 (en) |
| JP (1) | JPH0778777A (en) |
| KR (1) | KR940016668A (en) |
| CN (1) | CN1090344A (en) |
| CA (1) | CA2109654A1 (en) |
| NO (1) | NO934238L (en) |
| TW (1) | TW242196B (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2732224B2 (en) * | 1994-09-30 | 1998-03-25 | 信越半導体株式会社 | Wafer support boat |
| US5618351A (en) * | 1995-03-03 | 1997-04-08 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
| KR100234530B1 (en) * | 1996-08-23 | 1999-12-15 | 윤종용 | Semiconductor wafer boat |
| US6395363B1 (en) * | 1996-11-05 | 2002-05-28 | Applied Materials, Inc. | Sloped substrate support |
| JP3377996B1 (en) | 2001-12-27 | 2003-02-17 | 東京エレクトロン株式会社 | Heat treatment boat and vertical heat treatment equipment |
| KR100492977B1 (en) * | 2002-12-12 | 2005-06-07 | 삼성전자주식회사 | Wafer boats for consolidation of porous silica layer |
| US7727588B2 (en) * | 2003-09-05 | 2010-06-01 | Yield Engineering Systems, Inc. | Apparatus for the efficient coating of substrates |
| KR100657501B1 (en) * | 2004-08-19 | 2006-12-13 | 주식회사 테라세미콘 | Wafer Supporting Method and Wafer Holder for High-Temperature Semiconductor-Manufacture-Line |
| KR100953707B1 (en) * | 2004-08-24 | 2010-04-19 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | Semiconductor processing components and semiconductor processing utilizing same |
| JP4368356B2 (en) | 2006-03-27 | 2009-11-18 | シャープ株式会社 | Image forming apparatus and toner container removing method for image forming apparatus |
| CN102231406A (en) * | 2011-06-24 | 2011-11-02 | 苏州凯西石英电子有限公司 | Quartz boat used in solar energy cell silicon chip production |
| CN106298616B (en) * | 2015-06-04 | 2019-12-13 | 有研半导体材料有限公司 | Silicon wafer bearing part and method for reducing metal content of high-temperature annealing sheet |
| SG10201509996UA (en) * | 2015-12-04 | 2017-07-28 | Rokko Systems Pte Ltd | Improved substrate processing and apparatus |
| CN107527971A (en) * | 2017-08-14 | 2017-12-29 | 深圳市拉普拉斯能源技术有限公司 | A kind of silicon chip disperser and silicon chip inserted sheet method |
| CN107954719A (en) * | 2017-10-31 | 2018-04-24 | 苏州纳朴材料科技有限公司 | A kind of SiC carrier preparation methods for LED epitaxial wafer processing procedures |
| CN108800953B (en) * | 2018-08-24 | 2024-05-17 | 宁波市北仑区汉朝模具科技有限公司 | Material boat and heating pipe cooperation structure of tubular electric kiln |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4386255A (en) * | 1979-12-17 | 1983-05-31 | Rca Corporation | Susceptor for rotary disc reactor |
| JPS60152675A (en) * | 1984-01-20 | 1985-08-10 | Toshiba Mach Co Ltd | Vertical diffusion furnace type vapor growth device |
| JPS61191015A (en) * | 1985-02-20 | 1986-08-25 | Hitachi Ltd | Semiconductor vapor growth and equipment thereof |
-
1993
- 1993-11-22 CA CA002109654A patent/CA2109654A1/en not_active Abandoned
- 1993-11-22 TW TW082109804A patent/TW242196B/zh active
- 1993-11-23 NO NO934238A patent/NO934238L/en unknown
- 1993-11-30 KR KR1019930025771A patent/KR940016668A/en not_active Application Discontinuation
- 1993-12-02 JP JP5302491A patent/JPH0778777A/en active Pending
- 1993-12-03 CN CN93112769A patent/CN1090344A/en active Pending
- 1993-12-03 EP EP93119553A patent/EP0600516A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| TW242196B (en) | 1995-03-01 |
| EP0600516A1 (en) | 1994-06-08 |
| NO934238L (en) | 1994-06-06 |
| KR940016668A (en) | 1994-07-23 |
| JPH0778777A (en) | 1995-03-20 |
| NO934238D0 (en) | 1993-11-23 |
| CN1090344A (en) | 1994-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |