KR100657501B1 - Wafer Supporting Method and Wafer Holder for High-Temperature Semiconductor-Manufacture-Line - Google Patents

Abstract

In the present invention, a semiconductor manufacturing apparatus for processing a large diameter wafer at a high temperature process, by providing a holder of a combination of quartz as a fluid in the high temperature process and silicon carbide as a support in the high temperature process to suppress the slip and improve the productivity of the equipment Disclosed are a wafer supporting method and a wafer holder of a semiconductor manufacturing apparatus for high temperature processing.

To this end, the present invention has a holder body 10 of a ceramic series that maintains rigidity at a high temperature process, and a support body 12 having a quartz contact body 14 that is fluidly changed in a high temperature process. The support of the wafer in the high temperature process semiconductor manufacturing process, which maintains the contact position of the wafer in the high temperature process by avoiding direct contact between the silicon carbide and the wafer 100 by contacting the sieve with the support at the bottom of the wafer, and by fluidity at high temperature Method and its holder.

Here, the wafer support of the contact is supported as a fluid by including the heat zone of the high temperature process in the heat zone of the flow change of the contact as a physical property, and in the shape, the contact body 12 is provided in a ring shape and is concentric in its support position. In another embodiment, the support of the wafer 100 by the contact member 12 of quartz is characterized by performing three-point or four-point support in a radially concentric manner according to the support position. do.

Description

Wafer support method in semiconductor manufacturing process for high temperature process and wafer holder of semiconductor manufacturing apparatus for high temperature process {Wafer Supporting Method and Wafer Holder for High-Temperature Semiconductor-Manufacture-Line}

1 is an explanatory diagram showing a general semiconductor manufacturing apparatus;

2A is an external view illustrating a wafer holder according to the present invention;

2B is an enlarged conceptual view showing fluidly supporting a wafer in a high temperature process according to the wafer holder according to the present invention;

3 is a cutaway view showing a ring-shaped contact in the wafer holder according to the present invention,

4 is an explanatory view showing a three-point or four-point contact member in the wafer holder according to the present invention;

5 is an explanatory view showing a comparison of input material reduction according to the holder processing of the prior art and the present invention.

-Explanation of symbols for the main parts of the drawings-

100-wafer, 10-holder body,

12-support, 14-contact,

16-groove, 18-guide opening,

In the semiconductor manufacturing apparatus for processing a large diameter wafer at a high temperature process, the present invention provides a holder in which a quartz, which forms a fluid in a high temperature process, and a silicon carbide which forms a support in a high temperature process, suppresses slip and improves productivity of equipment. The wafer support method in the semiconductor manufacturing process for high temperature processes which were made, and the wafer holder of the semiconductor manufacturing apparatus for high temperature processes.

In general, a semiconductor manufacturing apparatus for processing a semiconductor substrate is generally a batch semiconductor manufacturing apparatus including a boat for loading the substrate for loading a large amount of the semiconductor substrate in order to improve the processing capability.

Exemplary Drawing FIG. 1 is a conceptual diagram for explaining this, and a conventional batch type semiconductor manufacturing apparatus includes a tubular reaction tube 1 forming an accommodating space therein and a plurality of semiconductor substrates 100 accommodated in the reaction tube. A slot (2) is formed to load the semiconductor substrate loading boat 3, the gas supply unit 4 for injecting the process gas and the gas discharge unit 5 for discharging the process gas; A heating heater 6 is formed to form a thin film on a semiconductor substrate through a process gas reacted by heat.

The thermal process in the reaction tube also includes a high temperature treatment process, for example, a heat treatment process to remove crystal originated particles (COP), and a diffusion process for diffusing a dopant added to a semiconductor into a wafer for doping. -in), oxide film forming process in wafer, SOI wafer making process, SOI heat treatment process, etc., and high temperature environment of 1200 ℃ or higher is mostly created.

On the other hand, in consideration of improving the productivity of the semiconductor, the large diameter of the wafer is active, and the wafer supporting method in the heat treatment reaction process is being changed according to the high temperature process and the large diameter.

In other words, the semiconductor substrate starts to deform at about 750 ° C., unless it creates a zero gravity environment, causing the wafer to sag locally through the slot in the substrate loading boat to the periphery of the wafer.

Particularly, slip, which is a crystal defect of a silicon lattice in a wafer during a high temperature heat treatment, is more likely to occur as the wafer is largely sized. To solve these problems, a holder is used, and the holder is positioned at the 0.7R (Radius) position of the wafer. The bottom is supported to structurally prevent sag.

Such a holder is disclosed in, for example, an ultra-high temperature semiconductor substrate holder (Application No. 10-2002-0055421), and in order to cope with a high temperature environment and a chemical environment of a reaction process, a ceramic series such as silicon carbide (SiC) is used. Is formed.

However, even when using such a holder, there is a problem that can cause mechanical damage of the wafer due to the nature of the material.

In other words, the thermal expansion of the wafer and the thermal expansion of the silicon carbide as a holder in the high temperature process is different, the thermal expansion of the wafer is generally large.

This difference in thermal properties makes it difficult to maintain the initial contact position in the high temperature process, and the wafer is mechanically damaged at the slip between the two materials, which may affect the yield of the semiconductor.

In addition, contamination of the wafer due to contact between the holder and the wafer may be caused.

To explain this in more detail, the presence of impurities in the wafer causes a fatal problem for the semiconductor.

Therefore, in the boat including the holder, an oxide film is formed in addition to the process of removing the residual material, thereby preventing contamination of the wafer by impurities.

However, even 100% chemical vapor deposition (CVD) silicon carbide cannot avoid the presence of trace amounts of metal impurities (Fe, Na, Cu, Ni, ...) in it. Direct contact of the wafer is also unavoidable.

In addition, expensive equipment composition cannot be avoided due to the material properties of the ceramic series, and thus, the maintenance is difficult, and in particular, silicon carbide is difficult to precisely process its properties.

In particular, in the contact surface of the wafer and the holder, it is difficult to planar processing for maintaining the contact surface, nevertheless there is a planar tolerance of the actual wafer, it is difficult to maintain a sufficient contact state.

Accordingly, the present invention has been made to solve the above problems, in the semiconductor manufacturing apparatus for processing a large diameter wafer at a high temperature process, a combination of quartz forming a fluid deformed in a high temperature environment and silicon carbide forming a support without deformation in a high temperature environment. The purpose of the present invention is to provide a wafer holder and a wafer holder for the semiconductor manufacturing process for a high temperature process by improving the yield of semiconductors by providing a holder to which the contact member is subjected to deformation of the wafer in a high temperature environment. will be.

In addition, a wafer holder which minimizes the residual amount of impurities to support the wafer prevents contamination of the wafer during the process, and saves input materials by assembling the support and the contactor in the processing of the holder, thereby improving the productivity of the manufacturing apparatus. There is another purpose in providing it.

DETAILED DESCRIPTION Hereinafter, the most preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention. . Other objects, features, and operational advantages, including the purpose, working effects, and the like of the present invention will become more apparent from the description of the preferred embodiment.

For reference, the embodiments disclosed herein are presented by selecting the most preferred examples to help those skilled in the art from understanding various embodiments, and the technical spirit of the present invention is not necessarily limited or limited by the embodiments. Various changes and modifications are possible within the scope without departing from the spirit of the invention, as well as other equivalent embodiments.

Exemplary drawings Figure 2 is an external view showing a wafer holder according to the present invention, Figure 3 is an enlarged explanatory view showing each embodiment of the wafer holder according to the present invention.

The present invention is a wafer support method of a high temperature process semiconductor manufacturing process in which the bottom portion of a large diameter wafer is contacted and supported by a holder to prevent sagging of the large diameter wafer 100 in a high temperature process, the holder body of a ceramic series that maintains rigidity at a high temperature process A quartz-based contact body 14 is provided as a support fluid 12 and an elastic fluid body that shows a flow state in a heat zone that is an intermediate region between a liquid state and a supercooled state according to a thermal characteristic thereof. The heat zone in which the contact body 14 is in a flow state while the 14 is in contact with the bottom of the wafer 100 with the support 10 as the direct contact between the holder body 10 and the wafer 100 is avoided. The wafer support of the high temperature semiconductor manufacturing process includes heat zones of the high temperature process of the semiconductor manufacturing process and maintains the contact position of the wafer by the fluidity of the contact 14 in the high temperature process of the semiconductor manufacturing process Way.

Here, the wafer support by the contact is characterized in that the contact body 14 is provided in a ring shape, and the contact body is supported in a concentric manner at the support position.

In another embodiment, the wafer 100 support by the contact 14 is characterized by performing three-point or four-point support in a radially concentric manner depending on the support position.

The present invention for this purpose provides a wafer holder of a semiconductor manufacturing apparatus for high temperature process, the present invention is a wafer holder in the wafer holder of the semiconductor manufacturing apparatus for high temperature process that is in contact with the bottom surface of a large diameter wafer in a high temperature process to support it during the process, the wafer holder The main body 10 is divided into a support 12 holding the main body and a contact body 14 contacting and supporting the bottom of the wafer 100, and a groove 16 is formed in the support 12 to form a groove part ( 16 is a wafer holder of a semiconductor manufacturing apparatus for a high temperature process, characterized in that the contact body 14, which is changed into a fluid in the heat zone of the high temperature process and is brought into contact with the bottom of the wafer 100, is detachably coupled.

In the holder body 10 of the present invention as a ceramic-based material, it is characterized in that the silicon carbide or graphite or silicon nitride or bronze nitride or one of the titanium nitride.

In addition, the contact body 14 is characterized in that the high temperature process heat zone of semiconductor manufacturing is provided in the quartz series included in the temperature zone where the contact body 14 changes as a fluid.

On the other hand, the contact 14 is characterized in that it is provided in a ring shape, in another embodiment, the contact 14 is a plurality of to perform the three-point support or four-point support of the wafer in the radially concentric with the support position It is divided and bonded to the support.

And, in general, the contact member 14 is a lower light cross section, the cross section of which has a sharp portion, the same thickness and both ends are characterized in that it has a curved portion connected to the side wall, or a circular cross section.

In addition, the groove portion 16 is characterized in that the guide opening portion 18 is formed to extend to the outside for detachment of the support 12 at its end.

As described above, the present invention relates to a semiconductor manufacturing apparatus for processing a large-diameter wafer in high temperature in more detail, comprising a holder in which a quartz forming a fluid in a high temperature process and a ceramic forming a support in a high temperature process are provided. A wafer support method in which a wafer is fluidly supported and a holder therefor are provided.

In general, most of the bituminous minerals are complex solid solutions, while quartz is very chemically pure because there are few other components, and for this reason, quartz has been used in semiconductor manufacturing equipment.

However, in high temperature processes, quartz is difficult to be used as a built-in device of the furnace, because deformation occurs as the quartz approaches about 1040 ° C.

The deformation is quartz, and more specifically, quartz glass is not a solid in the three states of the material due to its characteristics, but is a liquid in a supercooled state.

This is due to the change of viscosity with temperature, and unlike ordinary minerals, when cooled from a liquid state, the viscosity gradually increases, so that it does not generate heat at a solidification point, and is cooled and solidified without a regular ordered atomic arrangement.

Therefore, there is an elastic and fluid state in the middle region between the supercooled state of the solid state and the liquid state, as if the rubber is jelly.

In particular, the heat zone in the high temperature process of the semiconductor manufacturing apparatus is included in the heat zone forming the fluid, which is this intermediate region, and such physical properties make it difficult to hold the structure of the semiconductor manufacturing apparatus in the high temperature process.

This disadvantage is that although quartz is close to a pure material, it is difficult to be used due to process characteristics requiring a process temperature of about 1200 ° C. In the present invention, the wafer is locally supported by using the disadvantage of quartz deformation as an advantage. It is so long.

That is, as described above, the slip generated on the wafer in the high temperature process occurs at the portion in contact with the wafer. In order to prevent this, it is necessary to maintain the contact position by flexibly supporting the thermal expansion of the wafer.

To this end, a material with a certain amount of elasticity and fluidity is required.In the high temperature process, the elasticity and fluidity of quartz performs rather optimal conditions as a wafer holder. It can be minimized.

This is because the fluid support of quartz is also flexible in the planar processing, and the fluid support is flexible in accordance with the shape of the wafer 100 in the high temperature process.

On the other hand, in addition to the fluid support of the wafer 100, the combination structure needs to correspond sufficiently to a high temperature environment, and thus the present invention supports the wafer holder body 10 made of a ceramic series without deformation in high temperature fixing And a quartz-based contact body 14 which is fluidly deformed in the high temperature process and directly supports the bottom of the wafer 100.

The support body 12 of the holder body is fitted in the slit of the above-mentioned substrate loading boat, thereby providing a disc shape.

The contact body 14 is mounted on the support 12 to protrude and contact the wafer 100. The contact body 14 is divided into a plurality of embodiments according to the supporting method of the wafer 100 according to the contact body. A ring-shaped contact is shown to be coupled, and an exemplary view FIG. 4 shows a contact for radial local support coupled to a wafer support position.

First, a ring-shaped contact is provided to support the 0.7R position of the wafer on a concentric circle as described above.

Due to the physical properties of the contact 14, a high temperature process in this process is included in a thermal zone representing the flow region of this contact.

That is, the heat zone of the high temperature process is included in the critical region of the liquid phase and the solid phase, and does not exceed the critical temperature for changing the quartz into the liquid phase in the high temperature process.

In particular, the fluidity in the present invention includes the restorability (elasticity) thereby, corresponding to the contact of the wafer 100 while maintaining the basic shape of the contact body 14 like jelly.

Next, the cross-section in the shape of the contact body may have a sharp portion in the lower light reciprocation, and may have the same thickness, and both ends thereof may be finished with a curved surface leading to the side wall.

In addition, it may be provided in a circular or elliptical cross section.

Next, the contact for local support is mounted in a divided manner for support of three or four points radially along the concentric circle along the 0.7R position of the wafer, resulting in a manner in which only a portion of the contact in the ring is mounted. The cross section forms a sharp portion or a curved cross section like the ring shape.

A groove portion 16 is formed for detaching any of the contacts for the ring or local support, and the groove portion is formed with a guide opening 18 for insertion of the contact body 14.

On the other hand, the adoption of the contact body 14 in the present invention provides benefits in terms of productivity and maintenance of the device, apart from the fluid support of the wafer under the high temperature process as described above.

First, since the detachment of the contact 14 is a result of the replacement of the holder by performing only the replacement of the contact in the replacement of the holder, it is possible to see the reduction of expensive silicon carbide replacement and the benefits of maintenance accordingly. have.

In particular, when the first holder body 10 is prepared, the reduction of the input material and the gain of precision processing can be seen, an exemplary view Figure 5 is a conceptual diagram to explain the holder of the present invention compared with the prior art.

That is, as shown in the related art, in order to process the protrusion corresponding to the contact body of the present invention in the holder, the upper surface of the disc-shaped silicon carbide is processed with the protrusion remaining.

This is followed by a waste of the portion to be processed and deleted (dotted lines), and in particular the end of the protrusion must be in contact with the wafer so that the plane processing must be precise.

On the other hand, in the present invention, since there is no processing of the protrusions in the silicon carbide, the material to be discarded is only a portion by processing of the grooves.

In addition, by providing the flexibility of the processing according to the fluidity as described above in contact with the support to be mounted, it is possible to sufficiently secure the productivity when preparing the holder.

As described above, according to the present invention, by providing a holder of a combination of quartz, which forms a fluid that is deformed in a high temperature environment and silicon carbide, which forms a support without deformation in a high temperature environment, the contact is made in accordance with the deformation of the wafer in a high temperature environment By supporting it, there is an effect that the wafer slip is prevented during the high temperature process.

In addition, the quartz that is not provided in the high temperature process is introduced into the contact with the wafer, thereby preventing the contamination of the wafer.

In addition, the holder and the support are separated and the holder is exchanged by exchanging the contact, so the maintenance of the holder is easy, and when preparing the holder, the input material is saved in the processing thereof, and the contact is fluid at high temperatures. The burden of precision machining is reduced, thereby improving the productivity and maintenance of the holder.

Claims (9)

In the wafer supporting method of the high temperature process semiconductor manufacturing process in which the bottom part of the large diameter wafer is contacted and supported by the holder so as to prevent sagging of the large diameter wafer 100 in the high temperature process, the holder body 10 of the ceramic series that maintains rigidity in the high temperature process Is a support body 12 having a quartz-based contact body 14 as a fluid representing a fluid state in a thermal zone, which is an intermediate region between a liquid state and a solid state, according to thermal characteristics. Direct contact between the holder body and the wafer is avoided by contacting the bottom of the wafer with the support 10 as a point, and the heat zone of the semiconductor manufacturing process is included in the heat zone where the contact body is in a fluid state. A wafer supporting method of a high temperature semiconductor manufacturing process which maintains a contact position of a wafer by fluidity of the contact body 14 in a high temperature process. (delete) (delete) In a wafer holder of a semiconductor manufacturing apparatus for a high temperature process, which is in contact with the bottom surface of a large diameter wafer in a high temperature process and supports the same during the process: The wafer holder body 10 is divided into a support 12 holding the main body and a contact body 14 contacting and supporting the bottom of the wafer 100 to support the main body in the thermal zone of a high temperature process. The support 12 is made of one of silicon carbide, graphite, silicon nitride, bronze nitride, or titanium nitride, and a groove 16 is formed in the support 12, and the groove portion ( 16) is detachably coupled to the contact member 14, which is formed of a quartz series which is changed into a fluid in the heat zone of the high temperature process and holds the contact position as an elastic fluid at the bottom of the wafer 100. The wafer holder of the semiconductor manufacturing apparatus for high temperature process. (delete) 5. The wafer holder of a high temperature process semiconductor manufacturing apparatus according to claim 4, wherein the groove portion (16) is formed at its end with a guide opening portion (18) extending outward for detachment of the support (12). (delete) (delete) (delete)

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