JPH01168030A - Low-pressure vapor growth method - Google Patents
Low-pressure vapor growth methodInfo
- Publication number
- JPH01168030A JPH01168030A JP32551787A JP32551787A JPH01168030A JP H01168030 A JPH01168030 A JP H01168030A JP 32551787 A JP32551787 A JP 32551787A JP 32551787 A JP32551787 A JP 32551787A JP H01168030 A JPH01168030 A JP H01168030A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- jig
- ring
- film
- shaped jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims abstract description 3
- 239000003779 heat-resistant material Substances 0.000 claims abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 abstract description 48
- 239000010408 film Substances 0.000 abstract description 13
- 239000010409 thin film Substances 0.000 abstract description 5
- 150000004767 nitrides Chemical class 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- WHOPEPSOPUIRQQ-UHFFFAOYSA-N oxoaluminum Chemical compound O1[Al]O[Al]1 WHOPEPSOPUIRQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、半導体製造過程に於いて基板ウェハー上に窒
化膜（Ｓ＋３Ｎ４） 、低温酸化膜（ＬＴＯ） 、高温
酸化膜（ＨＴＯ） 、 リンガラス（ＰＳＧ） 、ポ
ロンリンガラス（ＢＰＳＧ）、高融点金属（リフラクト
リメタル）、メタルシリサイド、５ｉ−Ｇｅエピタキシ
ャル成長、ｍ−ｖ族、Ｉｆ−ＩＶ族化合物エピタキシャ
ル成長、等を均一に成長させ半導体デバイスに使用でき
るようにした減圧気相成長法に関するものである「従来
技術及びその問題点」
一般に、半導体製造過程に於いて基板ウェハー上に前記
酸化膜や窒化膜を成長させるのに減圧気相成長装置が使
用されている。このような減圧気相成長装置としては、
第１３図に示すように、水平方向に配置した細長い反応
管ｌの外側にヒータ２を配設し、反応管１内に、多数の
基板ウェハー３をウェハーボート４に多数立設し、反応
管接続フランジのガス導入口５からガスを矢印で示すよ
うに流動させて、排出口６からガスを排出させる横型減
圧気相成長装置と、第１４図に示すように、垂直方向に
配置した反応管１ ′の外側にヒーター２′を配設し、
反応管ｌ ′内に多数の基板ウェハー３ ′をウェハー
ポート４ ′に多数水平装着し１反応管上部若しくは下
部の導入口５ ′からガスを矢印で示すように波動させ
て排出口６ ′からガスを排出させる縦型減圧気相成長
装置が知られている、これら従来の気相成長装置で特に
シラン（Ｓｉｎ４）ガスを使用し酸化膜や窒化膜の薄膜
を成長させた場合、ウェハーのエツジ部分が厚くなり、
膜厚を均一にすることが困難であった。このような欠点
を解消するため、ポートを多数の孔を穿設した円筒状に
形成することが行なわれている。しかして、この円筒状
のポート（商品名でケージポートと呼ばれている。）は
、二つ割に形成されており。[Detailed Description of the Invention] "Industrial Application Field" The present invention applies to nitride films (S+3N4), low-temperature oxide films (LTO), high-temperature oxide films (HTO), and phosphorus glass on substrate wafers in the semiconductor manufacturing process. (PSG), poronrin glass (BPSG), refractory metal, metal silicide, 5i-Ge epitaxial growth, m-v group, If-IV group compound epitaxial growth, etc., are grown uniformly and used in semiconductor devices. ``Prior art and its problems'', which relates to the low-pressure vapor phase epitaxy method that has made it possible to produce It is used. As such a reduced pressure vapor phase growth apparatus,
As shown in FIG. 13, a heater 2 is arranged outside a long and narrow reaction tube l arranged horizontally, a large number of substrate wafers 3 are placed upright in a wafer boat 4 inside the reaction tube 1, and the reaction tube A horizontal reduced pressure vapor phase growth apparatus that causes gas to flow as shown by the arrow from the gas inlet 5 of the connecting flange and discharges the gas from the outlet 6, and a reaction tube arranged vertically as shown in Fig. 14. Heater 2' is arranged outside of 1',
A large number of substrate wafers 3' are horizontally mounted in the wafer port 4' in the reaction tube l', and the gas is undulated from the inlet 5' at the top or bottom of the reaction tube as shown by the arrow, and the gas is discharged from the outlet 6'. Vertical low-pressure vapor phase growth apparatuses that emit becomes thicker,
It was difficult to make the film thickness uniform. In order to overcome these drawbacks, the port is formed into a cylindrical shape with a large number of holes. However, this cylindrical port (called a cage port in the product name) is formed in two parts.
ウェハーを出し入れするのにこのポートを二つに開き、
ウェハーを一枚々ピンセットで挟んで行なっているが、
この方法だと作業能率が悪く、自動化も不可であり、し
かもポートを開く際にゴミが発生して、ウェハーに付着
する等の問題があったこの発明はこのような問題点を一
挙に解消しようとするものであり、ウェハー上に均一な
膜厚を形成し得るようにし、しかも自動化をも可能とし
た減圧気相成長方法を提供することを目的とするｒ問題
点を解決するための手段」
上記目的に沿う本発明の構成は、支柱にリング状治具を
固定し、基板ウェハーを該基板ウェハー表面が前記リン
グ状治具に面するように配置し、反応管内で気相成長さ
せることを要旨とする。Open this port in two to put in and take out wafers,
This is done by holding the wafers one by one with tweezers.
This method has poor work efficiency, cannot be automated, and has problems such as dust generated when opening the port and adhering to the wafer.This invention aims to solve these problems at once. The purpose of this method is to provide a low-pressure vapor phase growth method that can form a uniform film thickness on a wafer and can be automated. The structure of the present invention that meets the above object is to fix a ring-shaped jig to a support, arrange the substrate wafer so that the surface of the substrate wafer faces the ring-shaped jig, and perform vapor phase growth in a reaction tube. This is the summary.
本発明の効果の原因は、従来の方法ではガスがウェハー
上中央に均一に拡散せず、そのためウェハーのエツジ部
分が厚くなったウェハーが得られていたのに対し、基板
ウェハーをリング状治具に面するようにすることによっ
て、エツジ部分の温度を下げ、そのためウェハー上に均
一な薄膜が形成されるものと考えられる。The reason for the effect of the present invention is that in the conventional method, the gas did not diffuse uniformly to the center of the wafer, resulting in a wafer with thick edges. It is believed that by facing the wafer, the temperature at the edge is lowered and a uniform thin film is formed on the wafer.
「実施例」
以下に、この発明の望ましい実施例を図面を参照しなが
ら説明する。"Embodiments" Below, preferred embodiments of the present invention will be described with reference to the drawings.
第１図は横型減圧装置に適用する場合の側面図であり、
支柱１１の溝１２にリング状治具１３が固定され、各リ
ング状治具間には１枚若しくは２枚のウェハー１４がウ
ェハー表面がリング状治具１３に面するように支柱の溝
１４に支持されている。Figure 1 is a side view when applied to a horizontal decompression device.
A ring-shaped jig 13 is fixed in the groove 12 of the support 11, and one or two wafers 14 are placed between each ring-shaped jig in the groove 14 of the support with the wafer surface facing the ring-shaped jig 13. Supported.
第２図は、リング状治具１３間に１枚のウェハー１４を
支持させた例を示すものである。このように、１枚のウ
ェハーを支持させた場合は、各ウェハー表面は全て同一
方向を向いているので、第１図に示す場合のようにウェ
ハーを取り出す時に逆転させる必要がなくなる。FIG. 2 shows an example in which one wafer 14 is supported between ring-shaped jigs 13. When one wafer is supported in this way, the surfaces of each wafer are all facing in the same direction, so there is no need to reverse the wafer when taking it out, as in the case shown in FIG.
支柱１１は、上記実施例に於いては３本配設し、従って
、リング状治具１３及びウェハー１４は３箇所で支持さ
れているが、これは特にこのようでなくとも差し仕えな
い、しかしながら、支柱の本数を多くしても特に利点は
ない、リング状治具は、支柱１１の溝に爆接等により固
定されており、固定するとリング状治具を洗浄したりす
る場合に支柱からはずれることがないので便利である。In the above embodiment, three pillars 11 are provided, and therefore, the ring-shaped jig 13 and the wafer 14 are supported at three locations, but this need not be the case. However, there is no problem. , There is no particular advantage in increasing the number of columns.The ring-shaped jig is fixed to the groove of the column 11 by explosion welding, etc., and if it is fixed, it will come off from the column when cleaning the ring-shaped jig. It is convenient because there is no problem.
本発明に使用するリング状治具の材質は、耐熱性であれ
ば特に限定されないが、例えば炭化ケイン（Ｓｉｎ）
、 アルミナ（Ａｌ２Ｏ２） 、セラミック等の耐熱性
材料が好適に使用される。The material of the ring-shaped jig used in the present invention is not particularly limited as long as it is heat resistant, but for example, cane carbide (Sin) is used.
, alumina (Al2O2), ceramic, and other heat-resistant materials are preferably used.
第１図及び第２図に示すように支持したウェハーは、横
型減圧気相装置内で、常法により酸化膜、窒化膜等の薄
膜を形成させればよい。A thin film such as an oxide film or a nitride film may be formed on the wafer supported as shown in FIGS. 1 and 2 by a conventional method in a horizontal reduced pressure vapor phase apparatus.
第３図は、縦型減圧装置に適用する場合の側面図であり
、支柱１１に固定されたリング状治具１３上に、ウェハ
ー１４がａ置されている。この場合ウェハーポートは回
転可能になっている。FIG. 3 is a side view when applied to a vertical pressure reducing device, in which a wafer 14 is placed a on a ring-shaped jig 13 fixed to a support 11. In this case, the wafer port is rotatable.
リング状治具１３は、中央部が開口したリング状に形成
されていればその形状は特に限定されず、例えば第４図
〜第１１図に示す各種の形状のものが使用される。尚、
第４図中１５はリング状治具のすべり止めのため突起で
あるが、これは特になくとも差し仕えない。The shape of the ring-shaped jig 13 is not particularly limited as long as it is formed into a ring shape with an open center, and for example, various shapes shown in FIGS. 4 to 11 may be used. still,
In Fig. 4, reference numeral 15 indicates a protrusion to prevent the ring-shaped jig from slipping, but this is not necessary.
第１２図は、本考案のリング状治具の斜視図を示すもの
であり、リング状治具１３は、中央が開口した略円形に
形成され、上面には、ウェハー支持用突起１６が形成さ
れた例を示す。FIG. 12 shows a perspective view of the ring-shaped jig 13 of the present invention, and the ring-shaped jig 13 is formed into a substantially circular shape with an open center, and a wafer supporting protrusion 16 is formed on the upper surface. Here is an example.
このようにウェハー支持用突起１６を形成させると、ウ
ェハーとリング状治具との間に隙間が形成され、この隙
間に薄い板状物を挿入し、ウェハーを真空吸着させて出
し入れすることができる。従って、ウェハーの出し入れ
を自動化によって行なうことができる。尚、上記リング
状治具の一端１７は平坦に形成されているが、これは、
ウェハーの結晶軸を示すオリエンテーションフラットの
部分に合わせるためであり、このようにすることにより
オリエンテーションフラットの部分も均一な成長膜が形
成される。尚、真空吸着のための薄板は、リング状治具
の一端１７の平坦部若しくはその逆側から出し入れし、
ウェハーを出し入れする。When the wafer support protrusion 16 is formed in this way, a gap is formed between the wafer and the ring-shaped jig, and a thin plate-shaped object can be inserted into this gap, and the wafer can be taken in and out by vacuum suction. . Therefore, loading and unloading of wafers can be performed automatically. Note that one end 17 of the ring-shaped jig is formed flat;
This is to align the crystal axis of the wafer with the orientation flat portion, and by doing so, a uniform growth film can be formed even on the orientation flat portion. Note that the thin plate for vacuum suction is inserted or removed from the flat part of one end 17 of the ring-shaped jig or from the opposite side.
Load and unload wafers.
「発明の効果」
以上述べた如く本発明によるときは、ウェハー表面はリ
ング状治具に面して気相成長させるようになっているの
で、ウェハーのエツジ部分が冷却され、ウェハー周辺部
の界面での反応ガスの分解が抑えられるので、極端に周
辺部が厚くなる膜形成の時に使用してもウェハー上に均
一な薄膜を形成させることができる。また、リング状治
具の上面にウェハー支持用突起を形成させれば、ウェハ
ーの出し入れを自動化によって行なうことができ、生産
性が向上する。``Effects of the Invention'' As described above, according to the present invention, the wafer surface is grown in a vapor phase while facing the ring-shaped jig, so the edge portion of the wafer is cooled and the interface around the wafer is cooled. Since the decomposition of the reactive gas is suppressed, a uniform thin film can be formed on the wafer even if it is used to form a film that is extremely thick at the periphery. Furthermore, if a wafer supporting protrusion is formed on the top surface of the ring-shaped jig, wafers can be loaded and unloaded automatically, improving productivity.
第１図及び第２図は、横型減圧気相成長装置に適用する
場合の本発明の実施例を示す側面図、第３図は、縦型減
圧気相成長装置に適用する場合の本発明の実施例を示す
側面図。
第４図〜第１１図は、縦型減圧装置に適用する場合の本
発明の他の実施例を示す側面図、第１２図は、未発明に
使用するリング状治具の実施例を示す斜視図、
第１３図は、従来の縦型減圧気相成長装置を示す断面図
、
第１４図は、従来の横型減圧気相成長装置を示す断面図
である。
図中。
１１・・・支柱、１３・・・リング状治具、１４・・・
ウェハー。
特許出願人 東横化学株式会社
第１図
第３図
嬉４図
第５区 、１図
第６図 菓８図
第９図
１５１０図
第１２図
箆′１３図1 and 2 are side views showing an embodiment of the present invention applied to a horizontal reduced pressure vapor phase growth apparatus, and FIG. 3 is a side view showing an embodiment of the present invention applied to a vertical reduced pressure vapor growth apparatus. FIG. 2 is a side view showing an example. FIGS. 4 to 11 are side views showing other embodiments of the present invention when applied to a vertical pressure reducing device, and FIG. 12 is a perspective view showing an embodiment of a ring-shaped jig used in the non-invention. 13 is a sectional view showing a conventional vertical reduced pressure vapor phase growth apparatus, and FIG. 14 is a sectional view showing a conventional horizontal reduced pressure vapor growth apparatus. In the figure. 11... Support column, 13... Ring-shaped jig, 14...
wafer. Patent applicant: Toyoko Kagaku Co., Ltd.
Claims (2)
基板ウェハー表面が前記リング状治具に面するように配
置し、反応管内で気相成長させることを特徴とする減圧
気相成長方法。(1) Reduced pressure vapor phase growth characterized by fixing a ring-shaped jig to a support, arranging the substrate wafer so that the surface of the substrate wafer faces the ring-shaped jig, and performing vapor phase growth in a reaction tube. Method.
ミナ（Ａｌ＿２Ｏ＿３）、セラミック等の耐熱性材料で
形成してなる特許請求の範囲第１項に記載の減圧気相成
長方法。(2) The reduced pressure vapor phase growth method according to claim 1, wherein the ring-shaped jig is formed of a heat-resistant material such as silicon carbide (SiC), alumina (Al_2O_3), or ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62325517A JPH0727870B2 (en) | 1987-12-24 | 1987-12-24 | Low pressure vapor deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62325517A JPH0727870B2 (en) | 1987-12-24 | 1987-12-24 | Low pressure vapor deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01168030A true JPH01168030A (en) | 1989-07-03 |
| JPH0727870B2 JPH0727870B2 (en) | 1995-03-29 |
Family
ID=18177760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62325517A Expired - Lifetime JPH0727870B2 (en) | 1987-12-24 | 1987-12-24 | Low pressure vapor deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0727870B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0247029U (en) * | 1988-09-28 | 1990-03-30 | ||
| JPH0350324U (en) * | 1989-09-21 | 1991-05-16 | ||
| US5169453A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
| US5192371A (en) * | 1991-05-21 | 1993-03-09 | Asm Japan K.K. | Substrate supporting apparatus for a CVD apparatus |
| JP2018011011A (en) * | 2016-07-15 | 2018-01-18 | クアーズテック株式会社 | Vertical wafer boat |
| JP2021015870A (en) * | 2019-07-11 | 2021-02-12 | 三菱電機株式会社 | Manufacturing method of SiC semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5522140U (en) * | 1978-07-28 | 1980-02-13 | ||
| JPS58169906A (en) * | 1982-01-18 | 1983-10-06 | Nec Corp | Vapor growth device |
-
1987
- 1987-12-24 JP JP62325517A patent/JPH0727870B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5522140U (en) * | 1978-07-28 | 1980-02-13 | ||
| JPS58169906A (en) * | 1982-01-18 | 1983-10-06 | Nec Corp | Vapor growth device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0247029U (en) * | 1988-09-28 | 1990-03-30 | ||
| US5169453A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
| JPH0350324U (en) * | 1989-09-21 | 1991-05-16 | ||
| JPH06818Y2 (en) * | 1989-09-21 | 1994-01-05 | 日本エー・エス・エム株式会社 | Substrate support apparatus for CVD apparatus |
| US5192371A (en) * | 1991-05-21 | 1993-03-09 | Asm Japan K.K. | Substrate supporting apparatus for a CVD apparatus |
| JP2018011011A (en) * | 2016-07-15 | 2018-01-18 | クアーズテック株式会社 | Vertical wafer boat |
| JP2021015870A (en) * | 2019-07-11 | 2021-02-12 | 三菱電機株式会社 | Manufacturing method of SiC semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0727870B2 (en) | 1995-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5169684A (en) | Wafer supporting jig and a decompressed gas phase growth method using such a jig | |
| US5709543A (en) | Vertical heat treatment apparatus | |
| US5169453A (en) | Wafer supporting jig and a decompressed gas phase growth method using such a jig | |
| JPS61191015A (en) | Semiconductor vapor growth and equipment thereof | |
| US6051512A (en) | Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers | |
| JP2004022571A (en) | Wafer supporting tool and semiconductor device manufacturing method using the same | |
| JPH01168030A (en) | Low-pressure vapor growth method | |
| WO2004003995A1 (en) | Substrate treating apparatus and method for manufacturing semiconductor device | |
| JPH1087394A (en) | Susceptor for vapor phase growth device | |
| JP2009071210A (en) | Susceptor and epitaxial growth system | |
| JP2000150402A (en) | Substrate supporting jig | |
| JP4086242B2 (en) | Semiconductor manufacturing apparatus and semiconductor substrate thin film forming method using the same | |
| JP3388668B2 (en) | Heat treatment boat and vertical heat treatment equipment | |
| TWI548016B (en) | A substrate stage, a substrate processing apparatus, and a semiconductor device | |
| JP2537563Y2 (en) | Vertical vacuum deposition equipment | |
| JP3357311B2 (en) | Wafer support device in semiconductor manufacturing equipment | |
| WO2004112113A1 (en) | Semiconductor wafer heat-treatment method and vertical boat for heat treatment | |
| JPH0758029A (en) | Susceptor | |
| JPH0661331A (en) | Substrate transfer system | |
| JP2996355B2 (en) | Vertical storage jig | |
| JPS6318618A (en) | Susceptor cover | |
| JP3473263B2 (en) | Low pressure CVD equipment | |
| JP2004172374A (en) | Holding jig, manufacturing method of semiconductor wafer, and method for mounting semiconductor substrate and holding jig | |
| JP3575567B2 (en) | Semiconductor wafer vapor phase growth deposition method and vertical heat treatment apparatus | |
| JPH01205076A (en) | Coating device for silicon carbide film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080329 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080329 Year of fee payment: 13 |