CN108962876B - Pop结构及其形成方法 - Google Patents

Pop结构及其形成方法 Download PDF

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CN108962876B
CN108962876B CN201810603222.0A CN201810603222A CN108962876B CN 108962876 B CN108962876 B CN 108962876B CN 201810603222 A CN201810603222 A CN 201810603222A CN 108962876 B CN108962876 B CN 108962876B
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molding material
die
redistribution structure
package
device die
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CN108962876A (zh
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陈旭贤
陈志华
叶恩祥
吕孟升
陈承先
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

POP结构及其形成方法。一种器件包括与底部封装件接合的顶部封装件。底部封装件包括模塑材料；在模塑材料中模制的器件管芯；穿透模塑材料的组件通孔(TAV)；以及位于器件管芯上方的再分配线。顶部封装件包括封装在其中的分立无源器件。分立无源器件与再分配线电连接。

Description

POP结构及其形成方法
本申请是于2013年05月06日提交的申请号为201310162895.4的名称为“POP结构及其形成方法”的发明专利申请的分案申请。
技术领域
本发明涉及POP结构及其形成方法。
背景技术
在集成电路应用中，越来越多的功能被集成到产品中。例如，可能需要将诸如3G视频元件、WiFi元件、蓝牙元件以及音频/视频元件的不同功能元件集成到一起来形成应用。
在传统的集成方案中，将不同的部件接合至中介层，该中介层进一步接合至封装衬底。例如，在移动应用中，可以使用这种方案接合电源管理集成电路芯片、收发器芯片以及多层陶瓷电容器。所得到的封装件在面积上通常很厚且很大。此外，由于与中介层接合的各种部件通过许多电气连接与中介层连接，因此中介层的电气连接的间距需要非常小，并且有时小至约40nm至50nm。如此小的间距要求中介层使用微凸块(u-凸块)，微凸块的形成仍然面临着技术挑战。
发明内容
为了解决现有技术中存在的问题，根据本发明的一方面，提供了一种器件，包括：底部封装件，所述底部封装件包括：模塑材料；在所述模塑材料中模制的第一器件管芯；穿透所述模塑材料的组件通孔(TAV)；和位于所述模塑材料上方的第一再分配线；以及顶部封装件，所述顶部封装件包括封装在所述顶部封装件中的分立无源器件，其中所述顶部封装件位于所述底部封装件上方并且与所述底部封装件接合，并且所述分立无源器件与所述再分配线电连接。
在所述的器件中，所述分立无源器件是分立电容器。
所述的器件进一步包括：在所述模塑材料中模制的第二器件管芯，其中所述第一器件管芯和所述第二器件管芯彼此齐平。在一个实施例中，所述第一器件管芯包括第一电连接件，所述第二器件管芯包括第二电连接件，并且所述第一电连接件的端部和所述第二电连接件的端部与所述模塑材料的表面齐平。在另一个实施例中，所述第一器件管芯和所述第二器件管芯选自基本上由电源管理集成电路(PMIC)管芯、收发器(TRX)管芯和基带管芯所组成的组。
所述的器件进一步包括：位于所述模塑材料的与所述第一再分配线相反的面上的第二再分配线，其中所述第二再分配线通过所述TAV与所述第一再分配线电连接。
所述的器件进一步包括：包含在所述顶部封装件中的另一器件管芯，其中所述另一器件管芯与所述底部封装件接合；以及位于所述模塑材料中并且与所述另一器件管芯电连接的另一TAV。
根据本发明的另一方面，提供了一种器件，包括：底部封装件，所述底部封装件包括：模塑材料；在所述模塑材料中模制的第一器件管芯；在所述模塑材料中模制的第二器件管芯，其中所述第一器件管芯和所述第二器件管芯的电连接件的端部与所述模塑材料的表面齐平；穿透所述模塑材料的多个组件通孔(TAV)，其中所述第一器件管芯和所述第二器件管芯的电连接件的端部与所述多个TAV的端部齐平；位于所述模塑材料的第一面上的第一再分配层，其中所述第一再分配层包括多条第一再分配线；和位于所述模塑材料的与所述第一面相反的第二面上的第二再分配层，其中所述第二再分配层包括多条第二再分配线；以及位于所述底部封装件上方的顶部封装件，其中所述顶部封装件包括封装在所述顶部封装件中的分立电容器，并且所述分立电容器与所述底部封装件接合。
在所述的器件中，所述顶部封装件进一步包括与所述底部封装件接合的第三器件管芯。
在所述的器件中，所述顶部封装件进一步包括另一模塑材料，并且所述分立电容器在所述另一模塑材料中模制。在一个实施例中，所述另一模塑材料与所述底部封装件接触。
在所述的器件中，所述分立电容器是多层陶瓷电容器(MLCC)。
在所述的器件中，所述第一器件管芯和所述第二器件管芯的电连接件的端部与所述模塑材料的底面齐平。
在所述的器件中，所述第一器件管芯是电源管理集成电路(PMIC)管芯，而所述第二器件管芯是收发器(TRX)管芯。
根据本发明的又一方面，提供了一种方法，包括：形成底部封装件，形成底部封装件的步骤包括：在载具上方放置第一器件管芯和第二器件管芯；在所述载具上方形成多个组件通孔(TAV)；在模塑材料中模制所述第一器件管芯、所述第二器件管芯和所述多个TAV；减薄所述模塑材料，其中在所述减薄的步骤之后，通过所述模塑材料暴露出所述多个TAV的顶端以及所述第一器件管芯和所述第二器件管芯的电连接件的顶端；和在所述模塑材料的第一面上形成多条第一再分配线(RDL)，其中所述多条第一RDL与所述多个TAV电连接；以及形成顶部封装件，形成顶部封装件的步骤包括：将分立无源器件接合至所述底部封装件。
在所述的方法中，形成所述顶部封装件的步骤进一步包括将第三器件管芯接合至所述底部封装件。
所述的方法进一步包括：在所述模塑材料中模制所述分立无源器件。在一个实施例中，在将所述分立无源器件接合至所述底部封装件的步骤之后，执行模制所述分立无源器件的步骤。
所述的方法进一步包括：实施管芯切割以将所述顶部封装件和所述底部封装件与其他封装件分开。
所述的方法进一步包括：在所述模塑材料的第二面上形成多条第二RDL，其中所述多条第二RDL通过所述多个TAV与所述多条第一RDL电连接。
附图说明
为更充分地理解本实施例及其优点，现在将结合附图所作的如下描述作为参考，其中：
图1至图10是根据一些示例性实施例处于制造堆叠封装(POP)结构的中间阶段的截面图，其中在POP封装件中嵌有器件管芯。
具体实施方式
在下面详细讨论本发明实施例的制造和使用。然而，应该理解，实施例提供了许多可以在各种具体环境中实现的可应用的发明构思。所讨论的具体实施例仅仅是示例性的，而不用于限制本发明的范围。
根据各个示例性实施例提供了堆叠封装(POP)结构及其形成方法。示出了形成封装结构的中间阶段。论述了实施例的变化。在所有各个附图和示例性实施例中，相同的编号用于表示相同的元件。
图1至图10是根据一些示例性实施例处于制造POP结构的中间阶段的截面图。图1示出载具20以及位于载具20上的粘着层22。载具20可以是玻璃载具、陶瓷载具等。粘着层22可以由诸如紫外线(UV)胶的粘着剂形成。
图2示出器件管芯24和25的放置以及导电柱28的形成。例如通过粘着层22在载具20上方放置器件管芯24和25，并且使其彼此齐平。器件管芯24和25可以是其中包括逻辑晶体管的逻辑器件管芯。例如，在一些示例性实施例中，器件管芯24和25是设计用于移动应用的管芯并且可以包括电源管理集成电路(PMIC)管芯和收发器(TRX)管芯。尽管示出两个管芯24和25，但是在载具20的上方可以放置更多的管芯并且使其彼此齐平。
在整个说明书中，导电柱28被可选地称为组件通孔(Through AssemblyVia，TAV)28。在一些实施例中，预先形成TAV 28，然后将其放置在粘着层22上。在可选的实施例中，TAV 28可以通过镀法形成。可以在放置管芯24和25之前实施镀TAV 28，并且镀TAV 28可以包括在载具20上方形成晶种层(未示出)，形成并且图案化光刻胶(未示出)，以及在通过光刻胶暴露的晶种层部分上镀TAV 28。然后可以去除光刻胶和被光刻胶覆盖的晶种层部分。然后可以将器件管芯24和25放置在载具20上方。TAV28的材料可以包括铜、铝等。在图2中的所得到的结构中，TAV 28的底端与器件管芯24和25的底面基本上齐平。
在一些示例性实施例中，金属柱26(诸如铜柱)形成为器件管芯24和25的顶部并且与器件管芯24和25中的器件电连接。在一些实施例中，介电层27形成在器件管芯24和25的顶面，其中金属柱26的至少下部位于介电层27中。介电层27的顶面还可以与金属柱26的顶端基本上齐平。可选地，不形成介电层27，并且金属柱26在器件管芯24和25的剩余部分的上方伸出。
参考图3，在器件管芯24和25以及TAV 28上模制模塑材料40。模塑材料40填充器件管芯24和25以及TAV 28之间的间隙并且可以与粘着层22接触。而且，模塑材料40可以填充到金属柱26之间的间隙中。模塑材料40可以包括模塑料、模塑底部填充物、环氧树脂或者树脂。模塑材料40的顶面高于金属柱26和TAV 28的顶端。接下来，实施减薄步骤(其可以是研磨步骤)以减薄模塑材料40直至暴露出金属柱26和TAV 28。所得到的结构在图4中示出。由于减薄步骤，TAV 28的顶端28A与金属柱26的顶端26A基本上齐平并且与模塑材料40的顶面40A基本上齐平。
接下来，参考图5，在模塑材料40上方形成再分配线(RDL)42用于连接金属柱26和TAV 28。RDL 42还可以互连金属柱26和TAV 28。RDL形成在介电层44中。在一些实施例中，通过沉积金属层、图案化金属层并且用介电层44填充RDL 42之间的间隙形成RDL 42。在可选的实施例中，使用镶嵌工艺形成RDL 42和介电层44。RDL 42可以包含金属或者金属合金，包括铝、铜、钨和/或它们的合金。
图5还示出根据一些示例性实施例的电连接件46的形成。连接件46的形成可以包括在RDL 42的暴露部分上放置焊料球，然后回流焊料球。在可选的实施例中，连接件46的形成包括执行镀层步骤以在RDL 42上方形成焊料区，然后回流焊料区。连接件46还可以包括金属柱或者金属柱和焊料盖顶(solder cap)，其也可以通过镀法形成。在整个说明书中，包括器件管芯24和25、TAV 28、模塑材料40以及上覆的RDL 42和介电层44的组合结构被称为封装件48，其在该步骤中可以具有晶圆形式。在可选的实施例中，不是在该制造阶段形成电连接件46，而是在封装部件58和60接合之后形成电连接件46，该接合步骤在图9中示出。
参考图6，实施载具交换(carrier switch)。在载具交换工艺中，首先将载具49接合至封装件48，其中载具20和49位于封装件48的相反面上。可以通过粘着剂50将载具49接合至封装件48，粘着剂50可以是UV胶、胶带等。然后通过使粘着层22失去粘着性将载具20从封装件48卸离。然后去除粘着层22。例如，当粘着层22由UV胶形成时，可以将粘着层22暴露于UV光，从而使得粘着层22失去粘着性，并因此可以从封装件48去除载具20和粘着层22。
参考图7，在载具交换之后，暴露出TAV 28的后端28B。在示出的结构中，TAV 28的后端28B与器件管芯24的背面24A和器件管芯25的背面25A齐平。TAV 28的后端28B还可以与模塑材料40的表面40B基本上齐平。在一些实施例中，实施研磨以轻微地研磨器件管芯24和25以及TAV28的背面。作为研磨的结果，TAV 28可以在器件管芯24和25的背面上方略微伸出，或者使TAV 28的端部28B与表面40B、24A和25A齐平。可选地，可以省略研磨步骤。
如图8所示，形成介电层52和RDL 54。在一些实施例中，介电层52由诸如氧化物、氮化物、碳化物、碳氮化物、它们的组合和/或它们的多层的介电材料形成。RDL 54形成在介电层52中并且与TAV 28连接。一些RDL 54可以在器件管芯24和25上方延伸并且与器件管芯24和25对准。因此，RDL 54具有扇入结构。例如，可以将RDL 54的位于器件管芯24和25上方并且与器件管芯24和25对准的部分与RDL 54的位于TAV 28上方并且与TAV 28对准的部分连接。
图9示出封装部件58和60与封装件48的接合。封装部件58和60可以是封装件、器件管芯和/或无源器件等。在一些示例性实施例中，封装部件58是器件管芯，而封装部件60是分立无源器件，其并没有与诸如晶体管的有源器件集成在相同的芯片上。例如，当相应的封装件用于移动应用时，封装部件58可以是基带管芯，而封装部件60是多层陶瓷电容器(MLCC)。例如，可以使用倒装芯片接合通过连接件62来实施接合，其中连接件62可以包含焊料。应该理解，可以将器件管芯24、25和58布置成不同于所示出的示例性实施例。例如，PMIC管芯或者TRX管芯可以是器件管芯58，而基带管芯可以是器件管芯24和25中的一种。
在封装部件58和60接合之后，例如在模塑材料64中模制封装部件58和60。模塑材料64可以与底部封装件48接触。所得到的封装部件58和60与模塑料64因而形成顶部封装件66，其接合至下方的底部封装件48。因此，所得到的结构是POP结构。接下来，从载具49卸下顶部封装件66和底部封装件48。所得到的结构在图10中示出。然后可以将晶圆级封装件48切割成多个POP结构68，其中每一个POP结构68包括与一个底部封装件48接合的一个顶部封装件66。
在这些实施例中，将多个器件管芯连同TAV 28一起嵌入到底部封装件48中。嵌入式底部封装件48的厚度小于典型的封装衬底的厚度，并且小于中介层和封装衬底的合并厚度。因此，与其中器件管芯和封装部件接合至中介层，该中介层进一步接合在封装衬底上的传统结构相比，所得到的POP结构68具有减小的厚度。而且，将器件管芯24和25与封装部件58和60(图10)堆叠起来，而不是接合在同一中介层上(如在传统的结构中)。因此，与传统结构相比，器件管芯24和25以及封装部件58和60占据的总面积减小。
根据实施例，一种器件包括与底部封装件接合的顶部封装件。底部封装件包括模塑材料；在模塑材料中模制的器件管芯；穿透模塑材料的TAV；以及位于器件管芯上方的再分配线。顶部封装件包括封装在其中的分立无源器件。分立无源器件与再分配线电连接。
根据其他实施例，一种器件包括顶部封装件和底部封装件。底部封装件包括模塑材料；在模塑材料中模制的第一器件管芯；以及在模塑材料中模制的第二器件管芯。第一和第二器件管芯的电连接件的端部与模塑材料的表面齐平。底部封装件进一步包括穿透模塑材料的多个TAV，其中第一和第二器件管芯的电连接件的端部与多个TAV的端部齐平。底部封装件进一步包括位于模塑材料的第一面上的第一再分配层，其中第一再分配层包括多条第一再分配线，以及位于模塑材料的与第一面相反的第二面上的第二再分配层，其中第二再分配层包括多条第二再分配线。顶部封装件包括封装在其中的分立电容器，其中分立电容器与底部封装件接合。
根据又一些实施例，一种方法包括形成底部封装件，其包括在载具上方放置第一器件管芯和第二器件管芯；在载具上方形成多个TAV；在模塑材料中模制第一器件管芯、第二器件管芯和多个TAV；以及减薄模塑材料。在减薄步骤之后，通过模塑材料暴露出多个TAV的顶端以及第一器件管芯和第二器件管芯的电连接件的顶端。底部封装件的形成进一步包括在模塑材料的一面上形成多条RDL，其中多条RDL与多个TAV电连接。该方法进一步包括形成顶部封装件，其包括将分立无源器件接合至底部封装件。
尽管已经详细地描述了实施例及其优势，但应该理解，可以在不背离所附权利要求限定的实施例的构思和范围的情况下，进行各种改变、替换和更改。而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员根据本发明应很容易理解，根据本发明可以利用现有的或今后开发的用于执行与本文所述相应实施例基本上相同的功能或者获得基本上相同的结果的工艺、机器、制造、材料组分、装置、方法或步骤。因此，所附权利要求预期在其范围内包括这样的工艺、机器、制造、材料组分、装置、方法或步骤。此外，每条权利要求构成单独的实施例，并且多个权利要求和实施例的组合在本发明的范围内。

Claims (17)

1.一种半导体器件，包括：
底部封装件，包括：
模塑材料；
在所述模塑材料中模制的第一器件管芯，其中，所述第一器件管芯包括第一电连接件，
介电层，形成在所述第一器件管芯上方，其中，至少所述第一电连接件的下部位于所述介电层中，所述模塑材料设置在所述第一电连接件的突出于所述介电层的部分之间的间隙中；
穿透所述模塑材料的组件通孔(TAV)，其中，所述组件通孔的顶端突出于所述模塑材料的顶面；和
位于所述模塑材料上方的第一再分配结构，其中，通过所述第一再分配结构将所述组件通孔与所述第一器件管芯电连接，所述第一再分配结构包括彼此堆叠和接触形成的多个水平介电层以及形成在所述多个水平介电层的每个介电层中的金属线；以及
顶部封装件，包括封装在所述顶部封装件中的分立无源器件和电连接至所述分立无源器件的外部电连接件，其中所述顶部封装件位于所述底部封装件上方并且与所述底部封装件接合，并且所述外部电连接件与所述第一再分配结构直接电连接。
2.根据权利要求1所述的器件，其中，所述分立无源器件是分立电容器。
3.根据权利要求1所述的器件，进一步包括：在所述模塑材料中模制的第二器件管芯，其中所述第一器件管芯和所述第二器件管芯彼此齐平。
4.根据权利要求3所述的器件，其中，所述第一器件管芯包括第一金属柱，所述第二器件管芯包括第二金属柱，并且所述第一金属柱的端部和所述第二金属柱的端部与所述模塑材料的表面齐平。
5.根据权利要求3所述的器件，其中，所述第一器件管芯和所述第二器件管芯选自基本上由电源管理集成电路(PMIC)管芯、收发器(TRX)管芯和基带管芯所组成的组。
6.根据权利要求1所述的器件，进一步包括：位于所述模塑材料的与所述第一再分配结构相反的面上的第二再分配结构，其中所述第二再分配结构通过所述组件通孔与所述第一再分配结构电连接。
7.根据权利要求1所述的器件，进一步包括：
包含在所述顶部封装件中的另一器件管芯，其中所述另一器件管芯通过焊料区与所述底部封装件接合，所述焊料区位于所述第一再分配结构的上方；以及
位于所述模塑材料中并且与所述另一器件管芯电连接的另一组件通孔。
8.根据权利要求1所述的器件，其中，所述第一电连接件的底面与所述模塑材料的底面共面。
9.根据权利要求1所述的器件，其中，所述第一电连接件包括竖直边缘。
10.根据权利要求1所述的器件，其中，所述分立无源器件位于所述第一再分配结构上方并且与所述第一再分配结构通过焊料接缝接合，并且其中所述器件还包括位于所述焊料接缝之间的另一模塑材料。
11.一种半导体器件，包括：
底部封装件，包括：
模塑材料；
在所述模塑材料中模制的第一器件管芯；
穿透所述模塑材料的组件通孔(TAV)，其中，所述组件通孔的顶端突出于所述模塑材料的顶面；和
位于所述模塑材料下方的第一再分配结构，其中，通过所述第一再分配结构将所述组件通孔与所述第一器件管芯电连接，所述第一再分配结构包括彼此堆叠和接触形成的在水平方向上延伸的第一多个水平介电层以及形成在所述第一多个水平介电层的每个介电层中的金属互连件；以及
顶部封装件，位于所述底部封装件上方并且与所述底部封装件接合，其中所述顶部封装件包括：
另一电器件，电连接至所述第一再分配结构；
外部电连接件，电连接至所述另一电器件；和
另一模塑料，在所述另一模塑料中模制所述另一电器件和所述外部电连接件，其中，所述外部电连接件与位于所述模塑材料上方的第二再分配结构直接接触，所述第二再分配结构包括堆叠形成的第二多个介电层以及形成在所述第二多个介电层的每个介电层中的金属互连件。
12.根据权利要求11所述的器件，其中，所述另一电器件为分立无源器件。
13.根据权利要求11所述的器件，进一步包括：在所述模塑材料中模制的第二器件管芯，其中所述第一器件管芯和所述第二器件管芯彼此齐平。
14.根据权利要求11所述的器件，其中，所述第一器件管芯包括金属柱，并且其中，所述模塑材料设置在所述金属柱之间的间隙中。
15.根据权利要求14所述的器件，其中，所述金属柱的底面与所述模塑材料的底面共面。
16.根据权利要求11所述的器件，其中，所述另一电器件为另一器件管芯，并且其中，所述另一器件管芯通过所述外部电连接件接合所述第二再分配结构。
17.根据权利要求11所述的器件，其中，所述另一电器件位于所述第二再分配结构上方，并且其中，所述外部电连接件包括位于所述另一电器件和所述第二再分配结构之间并且与二者电互连的焊球。
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