CN108630743A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN108630743A
CN108630743A CN201710728631.9A CN201710728631A CN108630743A CN 108630743 A CN108630743 A CN 108630743A CN 201710728631 A CN201710728631 A CN 201710728631A CN 108630743 A CN108630743 A CN 108630743A
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semiconductor device
substrate
chip
semiconductor element
modification band
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CN108630743B (zh
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藤田努
大野天颂
南中理
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Kioxia Corp
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Toshiba Memory Corp
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Abstract

本发明的实施方式提供一种提升了密接性和强度的半导体装置及其制造方法。实施方式的半导体装置具备半导体元件。所述半导体元件在基板的侧面具有至少两个弯曲部，所述弯曲部沿着设于所述基板的改质带形成。所述两个弯曲部在和所述基板表面垂直的方向及平行的方向，相互错开地形成。所述侧面之中和所述两个弯曲部相接的面的任一部分为解理面。所述两个弯曲部之中，从所述基板背面侧的弯曲部到所述基板背面为止的所述基板的侧面，和所述基板表面大体垂直。

Description

半导体装置及其制造方法
[关联申请]
本申请享有以日本专利申请2017-55128号(申请日：2017年3月21日)为基础申请的优先权。本申请通过参照该基础申请而包含基础申请的全部内容。
技术领域
本发明的实施方式涉及一种半导体装置及其制造方法。
背景技术
半导体装置是通过沿着半导体元件的外形，使激光在晶片内部聚光，分割成多个半导体元件进行单片化而形成。然后，在半导体元件上设置密封材料，并将半导体元件和密封材料密接固定。在这种半导体装置中，要求在提高半导体元件和密封材料的密接性的同时，提高半导体元件的强度。
发明内容
实施方式提供一种提高了密接性及强度的半导体装置及其制造方法。
实施方式的半导体装置具备半导体元件。所述半导体元件在基板侧面具有至少两个弯曲部，所述弯曲部沿着设于所述基板的改质带形成。所述两个弯曲部在和所述基板表面垂直的方向及平行的方向，相互错开地形成。所述侧面之中和所述两个弯曲部相接的面的任一部分为解理面。所述两个弯曲部之中位于所述基板背面侧的弯曲部，到所述基板背面为止的所述基板侧面，和所述基板表面大体垂直。
附图说明
图1是表示第1实施方式的半导体装置的俯视图。
图2是表示第1实施方式的半导体装置的前视图。
图3是表示第1实施方式的半导体装置的侧视图。
图4是表示第1实施方式的第1变化例的半导体装置的俯视图。
图5是表示第1实施方式的第1变化例的半导体装置的前视图。
图6是表示第1实施方式的第1变化例的半导体装置的侧视图。
图7是表示第1实施方式的第2变化例的半导体装置的俯视图。
图8是表示第1实施方式的第2变化例的半导体装置的前视图。
图9是表示第1实施方式的第2变化例的半导体装置的侧视图。
图10是表示第1实施方式的第3变化例的半导体装置的俯视图。
图11是表示第1实施方式的第3变化例的半导体装置的前视图。
图12是表示第1实施方式的第3变化例的半导体装置的侧视图。
图13是表示第1实施方式的半导体装置的制造方法的流程图。
图14是表示第1实施方式的半导体装置的制造方法的一部分的立体图。
图15是表示第1实施方式的半导体装置的制造方法的一部分的剖视图。
图16(a)及(b)是对半导体装置的定位进行说明的俯视图及前视图。
图17(a)及(b)是对半导体装置的引线焊接进行说明的俯视图及前视图。
具体实施方式
下面，一边参照附图一边说明本发明的各实施方式。
另外，附图是示意图或概念图，各部分的厚度和宽度的关系、部分间的大小比率等并非一定和实际相同。此外，即便在表示相同部分时，也有不同附图中相互尺寸、比率不同地表现的情况。
另外，本申请说明书和各图中，对已描述过的图的所述要素相同的要素，附加相同符号，且适当省略详细说明。
(实施方式)
图1～图3分别表示半导体装置1的俯视图、前视图及侧视图。
如图1～图3所示，在半导体装置1设有半导体元件2，所述半导体元件2具有晶片3及半导体层4。例如，半导体元件2为芯片，晶片3包含硅(Si)。半导体层4设于晶片3的表面上，具有配线层等。
如图2所示，在晶片3的侧面，设有弯曲点3c。通过设置弯曲点3c，形成阶差，从而形成和晶片3的表面大体垂直的面3f1、及倾斜面3f2。
通过弯曲点3c形成阶差时，理想的是形成为例如铅垂方向的宽度为32微米以上且80微米以下，水平方向的宽度为4微米以上且30微米以下。由此，当在半导体元件2上形成包含树脂等的密封材料时，能提升半导体元件2对密封材料的密接力。
如图3所示，在晶片3中，弯曲点3c例如为面3f1和倾斜面3f2的交界部分。位于弯曲点3c附近的面3f1的一部分、和倾斜面3f2的一部分相当于粗糙面。远离弯曲点3c的面3f1的一部分、和倾斜面3f2的一部分相当于平滑面。即，晶片3的侧面是由粗糙面和平滑面组合构成。
于此，所谓粗糙面，是指残留应力为特定范围的面，例如指-300MPa以下、或者300Mpa以上的面。即，粗糙面由改质带形成。
所谓平滑面，是指残留应力为特定范围的面，例如指-100MPa以上、100Mpa以下的面。即，平滑面为解理面(沿着结晶断裂的面)。
例如使用拉曼分光法测定粗糙面及平滑面的残留应力(Pa)。
粗糙面及平滑面理想的是形成为，粗糙面的粗糙度(Rz)为1微米以上且10微米以下，平滑面的粗糙度(Rz)为0.01微米以上且0.5微米以下。由此，能提高半导体元件2的强度，且提升半导体元件2和密封材料的密接力。
下面，说明本实施方式的变化例。
图4～图6分别表示半导体装置1A的俯视图、前视图及侧视图。
图7～图9分别表示半导体装置1B的俯视图、前视图及侧视图。
图10～图12分别表示半导体装置1C的俯视图、前视图及侧视图。
首先，说明本实施方式的第1变化例。
如图4～图6所示，在半导体装置1A，设有半导体元件2，所述半导体元件2具有晶片3及半导体层4。在第1实施方式中，是在半导体元件2的晶片3的4个侧面内的1个侧面，利用弯曲点3c设置阶差。另一方面，在本变化例中，是在半导体元件2的晶片3的4个侧面内的多个面，利用弯曲点3c设置阶差。
接下来，说明本实施方式的第2变化例。
如图7～图9所示，在半导体装置1B，设有半导体元件2，所述半导体元件2具有晶片3及半导体层4。在第1实施方式中，是在半导体元件2的晶片3的侧面，利用弯曲点3c设置2个阶差。另一方面，在本变化例中，是在半导体元件2的晶片3的侧面，利用弯曲点3c设置3个以上的阶差。
接下来，说明本实施方式的第3变化例。
如图10～图12所示，在半导体装置1C，设有半导体元件2，所述半导体元件2具有晶片3及半导体层4。在本变化例中，即便未利用弯曲点3c形成阶差时，也可以在面3f1内的一部分形成粗糙面。
下面，说明本实施方式的半导体装置的制造方法。
图13是表示半导体装置1的制造方法的流程图。
在本实施方式的半导体装置的制造方法中，通过沿着晶片3上的切割线进行切割，单片化为多个半导体元件2。
首先，作为单片化为多个半导体元件2的切割技术的一个例子，简单说明隐形切割技术。
如图13所示，首先在晶片3的表面贴附保护胶带(S110)。例如，在晶片3的表面设置半导体层4。
接着，从晶片3背面照射激光，使激光在硅内部聚光，形成改质带(S120)。通过使改质带膨胀，龟裂朝上下进展，在晶片3的表面形成半切。激光例如为红外区域的透射激光。例如，激光功率为0.1W。
接着，用研削磨石研磨晶片背面，进行薄化加工(S130)。研削薄了以后，半切部分露出，芯片被单片化。
接着，用粘结剂将胶带贴在晶片3背面，并用支撑体固定晶片3周围(S140)。于此，粘结剂例如为DAF(Die Attach Film，芯片贴装薄膜)。胶带例如包含基材和粘着剂。支撑体例如为固定晶片3周围的环。
然后，用挤压体从下往上将胶带及晶片3上顶(S150)。由此，芯片间的距离变大，粘结剂部分被分割。于此，挤压体例如为扩张环。
通过这样的S110～S150所示的切割步骤，单片化为多个半导体元件2。
下面，说明切割步骤中通过在半导体元件2的晶片3形成弯曲点3c而形成阶差的步骤。
图14及图15是表示切割步骤中的改质带的形成的立体图及剖视图。
于此，本说明书中，将和晶片3的表面平行的方向、且相互正交的两个方向设为X方向及Y方向。将和X方向及Y方向均正交的方向设为Z方向。
如图14及图15所示，改质带10A、10B是沿着切割线形成的。例如，改质带10A、10B是通过在光束头20的行进方向(X方向)照射激光而连续地形成的。
和改质带10B相比，改质带10A在铅垂方向(Z方向)上形成在靠近晶片3表面的位置。利用改质带10A，在光束头20的行进方向形成路径P1。
和改质带10A相比，改质带10B在铅垂方向形成在靠近晶片3背面的位置。此外，改质带10B在和光束头20的行进方向交叉的方向(例如Y方向)上，和改质带10A错开特定间隔地形成。利用改质带10B，在光束头20的行进方向形成路径P2。光束头20的行进方向(X方向)是路径P1、P2的形成方向。
例如，从铅垂方向观察，路径P1及路径P2(即改质带10A及改质带10B)相互不重叠地形成。例如，路径P1及路径P2在铅垂方向的间隔(路径间隔D)为4微米左右。例如，路径P1在改质带10A间的间隔、及路径P2在改质带10B间的间隔(脉冲间距Pi)为1微米左右。
这样，在切割步骤的改质带的形成步骤(图13的S120)中，通过形成路径P1、和在Y方向与路径P1错开特定间隔的路径P2，在路径P1及路径P2(即改质带10A及改质带10B)上，解理分别在铅垂方向(Z方向)、及与铅垂方向倾斜的方向上行进。由此，在切割步骤之后，像图1～图3所示的那样，在半导体元件2的晶片3形成弯曲点3c。即，在晶片3形成阶差，形成和X-Y平面大体垂直的面3f1、及倾斜面3f2。
下面，说明本实施方式的效果。
图16(a)及图16(b)是半导体装置1的定位的说明图。
图17(a)及图17(b)是半导体装置1的引线焊接的说明图。
在本实施方式中，在半导体元件2的晶片3设有弯曲点3c。由此，在晶片3形成阶差，形成和X-Y平面大体垂直的面3f1、及倾斜面3f2。因此，通过使位于弯曲点3c附近的面3f1的一部分、及倾斜面3f2的一部分为粗糙面，在半导体元件2上形成密封材料时，能提升半导体元件2和密封材料的密接力。另一方面，在晶片3，粗糙面以外的部分形成为平滑面，因此抑制半导体元件2的强度下降。
而且，如图4～图9的变化例所示，通过增加弯曲点3c形成的阶差的数量，能进一步提升半导体元件2和密封材料的密接力。
此外，在本实施方式中，如图16(a)及图16(b)所示，能提升在半导体元件2上形成焊盘30时的位置精度。焊接时，利用相机40识别半导体元件2的位置，如图16(b)的箭头所示，利用半导体元件2的晶片3的侧面的阶差形状，能加强半导体元件2的端部的显示。由此，相机40的视认性提升，形成焊盘30时的位置精度提升。
此外，在本实施方式中，如图17(a)及图17(b)所示，在半导体元件2上形成焊盘30，并形成连接焊盘30的导线50时，焊盘30和半导体元件2的端部之间的距离变短，因此能抑制导线50和半导体元件2的端部的接触不良。
根据本实施方式，能提供一种提升了密接性和强度的半导体装置及其制造方法。
虽对本发明的若干实施方式进行了说明，但这些实施方式是作为示例而提示的，并不意图限定发明的范围。这些新颖的实施方式能以其他各种形态实施，且在不脱离发明主旨的范围内，能进行各种省略、置换、变更。这些实施方式或其变化包含在发明的范围及主旨，且包含在权利要求所记载的发明及其均等范围内。
[符号的说明]
1、1A、1B、1C 半导体装置
2 半导体元件
3 晶片
3c 弯曲点
3f1 面
3f2 倾斜面
4 半导体层
10A、10B 改质带
20 光束头
30 焊盘
40 相机
50 导线
D 路径间隔
P1、P2 路径
Pi 脉冲间距

Claims (5)

1.一种半导体装置，其特征在于：
在基板的侧面具备半导体元件，所述半导体元件具有至少两个弯曲部，所述弯曲部沿着设于所述基板的改质带形成，
所述两个弯曲部在和所述基板表面垂直的方向及平行的方向相互错开地形成，
所述侧面之中和所述两个弯曲部相接的面的任一部分为解理面，
所述两个弯曲部之中，从所述基板背面侧的弯曲部到所述基板背面为止所述基板的侧面，和所述基板表面大体垂直。
2.根据权利要求1所述的半导体装置，其特征在于：
所述两个弯曲部间的面的一部分为解理面。
3.根据权利要求1或2所述的半导体装置，其特征在于：
所述基板的改质带的残留应力为-300MPa以下、或者300Mpa以上。
4.一种半导体装置的制造方法，其特征在于具备以下步骤：
将对晶片具有透射性的激光，照射到所述晶片，形成第1改质带；及
对所述晶片照射所述激光，形成第2改质带；且
所述第1改质带及所述第2改质带沿着和所述晶片的表面平行的第1方向分别形成，
所述第1改质带及所述第2改质带在和所述晶片的表面平行的方向、即和所述第1方向交叉的第2方向、和所述晶片上表面的方向正交的第3方向上，相互远离。
5.根据权利要求4所述的半导体装置的制造方法，其特征在于：
从所述第3方向观察时，所述多个第1改质带不与所述多个第2改质带重叠。
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