TWI729174B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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TWI729174B
TWI729174B TW106124838A TW106124838A TWI729174B TW I729174 B TWI729174 B TW I729174B TW 106124838 A TW106124838 A TW 106124838A TW 106124838 A TW106124838 A TW 106124838A TW I729174 B TWI729174 B TW I729174B
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semiconductor device
substrate
wafer
semiconductor element
semiconductor
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TW201843713A (zh
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藤田努
大野天頌
南中理
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日商東芝記憶體股份有限公司
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Abstract

本發明之實施形態提供一種提昇密接性及強度之半導體裝置及其製造方法。 實施形態之半導體裝置具備半導體元件。上述半導體元件於基板之側面具有至少兩個彎曲部，上述彎曲部沿著設於上述基板之改質帶而形成。上述兩個彎曲部係於與上述基板表面垂直之方向及平行之方向相互錯開地形成。上述側面之中與上述兩個彎曲部相接之面之任一部分為解理面。上述兩個彎曲部之中自上述基板背面側之彎曲部至上述基板背面之上述基板之側面係與上述基板表面大致垂直。

Description

半導體裝置及其製造方法
本發明之實施形態係關於一種半導體裝置及其製造方法。
半導體裝置係藉由沿著半導體元件之外形，使雷射於晶圓內部聚光，分割成複數個半導體元件進行單片化而形成。然後，於半導體元件上設置密封材料，並將半導體元件與密封材料密接固定。於此種半導體裝置中，要求於提高半導體元件與密封材料之密接性之同時，提高半導體元件之強度。
實施形態提供一種提高密接性及強度之半導體裝置及其製造方法。 實施形態之半導體裝置具備半導體元件。上述半導體元件於基板側面具有至少兩個彎曲部，上述彎曲部沿著設於上述基板之改質帶形成。上述兩個彎曲部係於與上述基板表面垂直之方向及平行之方向相互錯開地形成。上述側面之中與上述兩個彎曲部相接之面之任一部分為解理面。上述兩個彎曲部之中位於上述基板背面側之彎曲部至上述基板背面之上述基板側面係與上述基板表面大致垂直。
以下，一面參照圖式一面說明本發明之各實施形態。 再者，圖式係示意圖或概念圖，各部分之厚度與寬度之關係、部分間之大小較率等並非一定與實際相同。又，即便於表示相同部分時，亦有不同圖式中相互尺寸、較率不同地表現之情形。 再者，本案說明書與各圖中，對已描述過之圖之上述要素相同之要素，附加相同符號，且適當省略詳細說明。 (實施形態) 圖1〜圖3分別表示半導體裝置1之俯視圖、前視圖及側視圖。 如圖1〜圖3所示，於半導體裝置1設有半導體元件2，上述半導體元件2具有晶圓3及半導體層4。例如，半導體元件2為晶片，晶圓3包含矽(Si)。半導體層4設於晶圓3之表面上，具有配線層等。 如圖2所示，於晶圓3之側面，設有彎曲點3c。藉由設置彎曲點3c，形成階差，從而形成與晶圓3之表面大致垂直之面3f1、及傾斜面3f2。 藉由彎曲點3c形成階差時，較理想形成為例如鉛垂方向之寬度為32微米以上且80微米以下，水平方向之寬度為4微米以上且30微米以下。藉此，當於半導體元件2上形成包含樹脂等之密封材料時，能提昇半導體元件2對密封材料之密接力。 如圖3所示，於晶圓3中，彎曲點3c例如為面3f1與傾斜面3f2之交界部分。位於彎曲點3c附近之面3f1之一部分、與傾斜面3f2之一部分相當於粗糙面。遠離彎曲點3c之面3f1之一部分、與傾斜面3f2之一部分相當於平滑面。即，晶圓3之側面係由粗糙面與平滑面組合構成。 此處，所謂粗糙面，係指殘留應力為特定範圍之面，例如指-300 MPa以下、或者300 Mpa以上之面。即，粗糙面由改質帶形成。 所謂平滑面，係指殘留應力為特定範圍之面，例如指-100 MPa以上、100 Mpa以下之面。即，平滑面為解理面(沿著結晶斷裂之面)。 例如使用拉曼光譜法測定粗糙面及平滑面之殘留應力(Pa)。 粗糙面及平滑面較理想形成為，粗糙面之粗糙度(Rz)為1微米以上且10微米以下，平滑面之粗糙度(Rz)為0.01微米以上且0.5微米以下。藉此，能提高半導體元件2之強度，且提昇半導體元件2與密封材料之密接力。 以下，說明本實施形態之變化例。 圖4〜圖6分別表示半導體裝置1A之俯視圖、前視圖及側視圖。 圖7〜圖9分別表示半導體裝置1B之俯視圖、前視圖及側視圖。 圖10〜圖12分別表示半導體裝置1C之俯視圖、前視圖及側視圖。 首先，說明本實施形態之第1變化例。 如圖4〜圖6所示，於半導體裝置1A，設有半導體元件2，上述半導體元件2具有晶圓3及半導體層4。於第1實施形態中，係於半導體元件2之晶圓3之4個側面中之1個側面，設有由彎曲點3c而成之階差。另一方面，於本變化例中，於半導體元件2之晶圓3之4個側面內之複數個面，設有由彎曲點3c而成之階差。 接下來，說明本實施形態之第2變化例。 如圖7〜圖9所示，於半導體裝置1B，設有半導體元件2，上述半導體元件2具有晶圓3及半導體層4。於第1實施形態中，於半導體元件2之晶圓3之側面，設有由彎曲點3c而成之2個階差。另一方面，於本變化例中，於半導體元件2之晶圓3之側面，設有由彎曲點3c而成之3個以上之階差。 接下來，說明本實施形態之第3變化例。 如圖10〜圖12所示，於半導體裝置1C，設有半導體元件2，上述半導體元件2具有晶圓3及半導體層4。於本變化例中，即便在未形成由彎曲點3c而成之階差的情況下，亦可於面3f1內之一部分形成粗糙面。 以下，說明本實施形態之半導體裝置之製造方法。 圖13係表示半導體裝置1之製造方法之流程圖。 於本實施形態之半導體裝置之製造方法中，沿著晶圓3上之切割線進行切割，而單片化為複數個半導體元件2。 首先，作為單片化為複數個半導體元件2之切割技術之一例，簡單說明隱形切割技術。 如圖13所示，首先於晶圓3之表面貼附保護膠帶(S110)。例如，於晶圓3之表面設置半導體層4。 其次，自晶圓3背面照射雷射，使雷射於矽內部聚光而形成改質帶(S120)。藉由改質帶膨脹，龜裂朝上下進展，於晶圓3之表面形成半切。雷射例如為紅外區域之透過雷射。例如，雷射輸出為0.1 W。 其次，用研削磨石研磨晶圓背面，進行薄化加工(S130)。研削薄化後，半切部分露出，將晶片單片化。 其次，藉由接著劑將膠帶貼於晶圓3背面，藉由支持體固定晶圓3周圍(S140)。此處，接著劑例如為DAF(Die Attach Film，晶粒附著膜)。膠帶例如由基材與黏著劑構成。支持體例如為固定晶圓3周圍之環。 然後，藉由擠壓體自下往上將膠帶及晶圓3上頂(S150)。藉此，將晶片間之距離擴大，而將接著劑部分分割。此處，擠壓體例如為擴張環。 藉由此種S110〜S150所示之切割步驟，單片化為複數個半導體元件2。 以下，說明切割步驟中藉由於半導體元件2之晶圓3形成彎曲點3c而形成階差之步驟。 圖14及圖15係表示切割步驟中之改質帶之形成之立體圖及剖視圖。 此處，本說明書中，將與晶圓3之表面平行之方向、且相互正交之兩個方向設為X方向及Y方向。將與X方向及Y方向均正交之方向設為Z方向。 如圖14及圖15所示，改質帶10A、10B係沿著切割線形成。例如，改質帶10A、10B係藉由於光束頭20之行進方向(X方向)照射雷射而連續地形成。 與改質帶10B相比，改質帶10A於鉛垂方向(Z方向)上形成於靠近晶圓3表面之位置。利用改質帶10A，於光束頭20之行進方向形成路徑P1。 與改質帶10A相比，改質帶10B於鉛垂方向形成於靠近晶圓3背面之位置。又，改質帶10B於與光束頭20之行進方向交叉之方向(例如Y方向)上，與改質帶10A錯開特定間隔地形成。利用改質帶10B，於光束頭20之行進方向形成路徑P2。光束頭20之行進方向(X方向)係路徑P1、P2之形成方向。 例如，自鉛垂方向觀察，路徑P1及路徑P2(即改質帶10A及改質帶10B)相互不重疊地形成。例如，路徑P1及路徑P2於鉛垂方向之間隔(路徑間隔D)為4微米左右。例如，路徑P1於改質帶10A間之間隔、及路徑P2於改質帶10B間之間隔(脈衝間距Pi)為1微米左右。 如此，於切割步驟之改質帶之形成步驟(圖13之S120)中，藉由形成路徑P1、及於Y方向與路徑P1錯開特定間隔之路徑P2，於路徑P1及路徑P2(即改質帶10A及改質帶10B)各者上，解理係於鉛垂方向(Z方向)、及與鉛垂方向傾斜之方向行進。藉此，於切割步驟之後，如圖1〜圖3所示，於半導體元件2之晶圓3形成彎曲點3c。即，於晶圓3形成階差，形成與X-Y平面大致垂直之面3f1、及傾斜面3f2。 以下，說明本實施形態之效果。 圖16(a)及圖16(b)係半導體裝置1之定位之說明圖。 圖17(a)及圖17(b)係半導體裝置1之打線接合之說明圖。 於本實施形態中，於半導體元件2之晶圓3設有彎曲點3c。藉此，於晶圓3形成階差，形成與X-Y平面大致垂直之面3f1、及傾斜面3f2。因此，藉由使位於彎曲點3c附近之面3f1之一部分、及傾斜面3f2之一部分為粗糙面，於半導體元件2上形成密封材料的情形時，能提昇半導體元件2與密封材料之密接力。另一方面，於晶圓3，除粗糙面以外之部分形成為平滑面，因此抑制半導體元件2之強度下降。 進而，如圖4〜圖9之變化例所示，藉由增加由彎曲點3c而成之階差之數量，能進而提昇半導體元件2與密封材料之密接力。 又，於本實施形態中，如圖16(a)及圖16(b)所示，能提昇於半導體元件2上形成焊墊30時之位置精度。焊接時，以相機40識別半導體元件2之位置，如圖16(b)之箭頭所示，利用半導體元件2之晶圓3之側面之階差形狀，能加強半導體元件2之端部之顯示。藉此，相機40之視認性提昇，形成焊墊30時之位置精度提昇。 又，於本實施形態中，如圖17(a)及圖17(b)所示，於半導體元件2上形成焊墊30，且形成連接焊墊30之導線50時，焊墊30與半導體元件2之端部之間之距離變短，因此能抑制導線50與半導體元件2之端部之接觸不良。 根據本實施形態，能提供一種提昇了密接性及強度之半導體裝置及其製造方法。 雖對本發明之若干實施形態進行了說明，但該等實施形態係作為示例而提示者，並不意圖限定發明之範圍。該等新穎之實施形態能以其他各種形態實施，且於不脫離發明主旨之範圍內，能進行各種省略、置換、變更。該等實施形態或其變化包含於發明之範圍及主旨，且包含於申請專利範圍所記載之發明及其均等範圍內。 [相關申請] 本案享有以日本專利申請2017-55128號(申請日：2017年3月21日)為基礎申請案之優先權。本案藉由參照該基礎申請案而包含基礎申請案之全部內容。
1、1A、1B、1C‧‧‧半導體裝置2‧‧‧半導體元件3‧‧‧晶圓3c‧‧‧彎曲點3f1‧‧‧面3f2‧‧‧傾斜面4‧‧‧半導體層10A、10B‧‧‧改質帶20‧‧‧光束頭30‧‧‧焊墊40‧‧‧相機50‧‧‧導線D‧‧‧路徑間隔P1、P2‧‧‧路徑Pi‧‧‧脈衝間距S110～S150‧‧‧步驟
圖1係表示第1實施形態之半導體裝置之俯視圖。 圖2係表示第1實施形態之半導體裝置之前視圖。 圖3係表示第1實施形態之半導體裝置之側視圖。 圖4係表示第1實施形態之第1變化例之半導體裝置之俯視圖。 圖5係表示第1實施形態之第1變化例之半導體裝置之前視圖。 圖6係表示第1實施形態之第1變化例之半導體裝置之側視圖。 圖7係表示第1實施形態之第2變化例之半導體裝置之俯視圖。 圖8係表示第1實施形態之第2變化例之半導體裝置之前視圖。 圖9係表示第1實施形態之第2變化例之半導體裝置之側視圖。 圖10係表示第1實施形態之第3變化例之半導體裝置之俯視圖。 圖11係表示第1實施形態之第3變化例之半導體裝置之前視圖。 圖12係表示第1實施形態之第3變化例之半導體裝置之側視圖。 圖13係表示第1實施形態之半導體裝置之製造方法之流程圖。 圖14係表示第1實施形態之半導體裝置之製造方法之一部分之立體圖。 圖15係表示第1實施形態之半導體裝置之製造方法之一部分之剖視圖。 圖16(a)及(b)係對半導體裝置之定位進行說明之俯視圖及前視圖。 圖17(a)及(b)係對半導體裝置之打線接合進行說明之俯視圖及前視圖。
1‧‧‧半導體裝置
2‧‧‧半導體元件
3‧‧‧晶圓
4‧‧‧半導體層

Claims (3)

  1. 一種半導體裝置，其具備半導體元件，上述半導體元件於基板之側面具有至少兩個彎曲部，上述彎曲部沿著設於上述基板之改質帶形成，上述兩個彎曲部係於與上述基板表面垂直之方向及平行之方向相互錯開地形成，上述側面之中與上述兩個彎曲部相接之面之任一部分為解理面，上述兩個彎曲部之中自上述基板背面側之彎曲部至上述基板背面之上述基板之側面係與上述基板表面垂直，上述兩個彎曲部之中自上述基板表面側之彎曲部至上述基板表面之上述基板之側面係與上述基板表面垂直。
  2. 如請求項1之半導體裝置，其中上述兩個彎曲部間之面之一部分為解理面。
  3. 如請求項1或2之半導體裝置，其中上述基板之改質帶之殘留應力為-300MPa以下、或者300Mpa以上。
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