CN108630743B - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN108630743B CN108630743B CN201710728631.9A CN201710728631A CN108630743B CN 108630743 B CN108630743 B CN 108630743B CN 201710728631 A CN201710728631 A CN 201710728631A CN 108630743 B CN108630743 B CN 108630743B
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- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 238000000034 method Methods 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000003776 cleavage reaction Methods 0.000 abstract description 4
- 230000007017 scission Effects 0.000 abstract description 4
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- 239000003566 sealing material Substances 0.000 description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/85121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/85122—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors by detecting inherent features of, or outside, the semiconductor or solid-state body
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- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
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- Health & Medical Sciences (AREA)
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- Chemical & Material Sciences (AREA)
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Abstract
Description
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-055128 | 2017-03-21 | ||
JP2017055128A JP2018157168A (ja) | 2017-03-21 | 2017-03-21 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108630743A CN108630743A (zh) | 2018-10-09 |
CN108630743B true CN108630743B (zh) | 2022-04-01 |
Family
ID=63581204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710728631.9A Active CN108630743B (zh) | 2017-03-21 | 2017-08-23 | 半导体装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10741650B2 (zh) |
JP (1) | JP2018157168A (zh) |
CN (1) | CN108630743B (zh) |
TW (1) | TWI729174B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022108406A (ja) * | 2021-01-13 | 2022-07-26 | 三菱電機株式会社 | 半導体チップ、半導体装置、および半導体装置の製造方法 |
US11784050B2 (en) * | 2021-04-27 | 2023-10-10 | Micron Technology, Inc. | Method of fabricating microelectronic devices and related microelectronic devices, tools, and apparatus |
WO2023176370A1 (ja) * | 2022-03-17 | 2023-09-21 | ローム株式会社 | 半導体素子および半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005051007A (ja) * | 2003-07-28 | 2005-02-24 | Tokyo Electron Ltd | 半導体チップの製造方法 |
JP2006140356A (ja) * | 2004-11-12 | 2006-06-01 | Hamamatsu Photonics Kk | レーザ加工方法及びレーザ加工装置 |
JP4471852B2 (ja) * | 2005-01-21 | 2010-06-02 | パナソニック株式会社 | 半導体ウェハ及びそれを用いた製造方法ならびに半導体装置 |
JP2007134454A (ja) * | 2005-11-09 | 2007-05-31 | Toshiba Corp | 半導体装置の製造方法 |
JP4923874B2 (ja) * | 2005-11-16 | 2012-04-25 | 株式会社デンソー | 半導体ウェハ |
JP5446325B2 (ja) | 2009-03-03 | 2014-03-19 | 豊田合成株式会社 | レーザ加工方法および化合物半導体発光素子の製造方法 |
JP5585267B2 (ja) * | 2009-08-26 | 2014-09-10 | コニカミノルタ株式会社 | ガスバリア性フィルム、その製造方法、及びそれを用いた有機光電変換素子 |
CN103444271A (zh) | 2011-05-12 | 2013-12-11 | 株式会社藤仓 | 贯通布线基板、电子器件封装以及电子部件 |
EP3024616B1 (de) | 2013-07-23 | 2019-04-10 | 3D-Micromac AG | Verfahren und vorrichtung zur trennung eines flachen werkstücks in mehrere teilstücke |
JP6452490B2 (ja) | 2015-02-25 | 2019-01-16 | キヤノン株式会社 | 半導体チップの生成方法 |
US20160276535A1 (en) * | 2015-03-19 | 2016-09-22 | Epistar Corporation | Light emitting device and method of fabricating the same |
-
2017
- 2017-03-21 JP JP2017055128A patent/JP2018157168A/ja active Pending
- 2017-07-25 TW TW106124838A patent/TWI729174B/zh active
- 2017-08-23 CN CN201710728631.9A patent/CN108630743B/zh active Active
- 2017-09-04 US US15/694,934 patent/US10741650B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20180277640A1 (en) | 2018-09-27 |
JP2018157168A (ja) | 2018-10-04 |
TW201843713A (zh) | 2018-12-16 |
CN108630743A (zh) | 2018-10-09 |
TWI729174B (zh) | 2021-06-01 |
US10741650B2 (en) | 2020-08-11 |
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