TWI426569B - 包含具有釋放主動區的晶粒之積體電路封裝件系統 - Google Patents

包含具有釋放主動區的晶粒之積體電路封裝件系統 Download PDF

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TWI426569B
TWI426569B TW097137668A TW97137668A TWI426569B TW I426569 B TWI426569 B TW I426569B TW 097137668 A TW097137668 A TW 097137668A TW 97137668 A TW97137668 A TW 97137668A TW I426569 B TWI426569 B TW I426569B
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die
stacked
bottom die
substrate
wire
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TW097137668A
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TW200924085A (en
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Byung Tai Do
Sang-Ho Lee
Jong Wook Ju
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Stats Chippac Ltd
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Description

包含具有釋放主動區的晶粒之積體電路封裝件系統
本發明係關於積體電路封裝件系統，尤其係關於多晶片的封裝件系統。
於電子產業中，當如行動電話和攝錄相機的產品變得越來越小時，積體電路(IC)或晶片封裝件的微型化遂變得越來越重要。同時，較高效能與較低成本已成新產品不可或缺的要素。
通常，許多個別的積體電路元件是建構於一晶圓上，且成群組的積體電路元件則被分割成個別的積體電路晶粒(die)。
一種用以將更多積體電路晶粒放在單一封裝件內的方法是在堆疊的晶粒間具有連接導線的空間。該空間為以有機黏著劑的厚層或結合如：矽(Si)，陶瓷，或金屬的無機材料製成的墊片來產生。然而，堆疊的方法並不利於封裝件的效能，因為該等有機黏著劑及/或無機墊片無法散熱而令散熱效能減低。當所堆疊的晶粒數目增加，熱阻將會更快速的增加。再者，此種堆疊晶粒的製造成本高。
一般而言，半導體封裝件根據其結構而分類成數種形式。具體來說，半導體封裝件根據其組裝結構而分類為成列形式(in-line type)和表面接置形式(surface mount type)。成列形式半導體封裝件的例子包含雙列封裝件(dual in-line package(DIP))和針柵陣列(pin grid array(PGA))封裝件。表面接置形式半導體封裝件的例子包含四面扁平封裝件(quad flat package(QFP))和球柵陣列(ball grid array(BGA))封裝件。
堆疊晶粒已遭遇到許多形式的焊線焊接問題。一個潛在的問題是於焊線焊接頂部晶粒過程中焊線下垂所導致的焊線短路至該底部晶粒。焊線下垂所造成的電性短路的問題影響重大且頻繁地發生於量產上。這個問題於將焊線反向焊接到底部晶粒的頂面時特別嚴重。
另一種形式的潛在問題是在焊接至頂部晶粒時，因焊線之線弧(wire loop)高度較預期為高，而導致焊線短路至頂部晶粒。這個問題在將焊線以正常方式焊接到底部晶粒的頂面時特別嚴重。
近來，為了於封裝件板上獲得較高的元件接置密度，相較於成列形式半導體封裝件，表面接置形式半導體封裝件的使用已增加。傳統半導體封裝件的尺寸遠大於所使用的半導體晶粒的尺寸。因此，此種半導體封裝件無法滿足該當前對於輕、薄、簡單、微型化結構的需求。於是，傳統的半導體封裝件難以滿足高度集成化微型化結構的需求。
此外，用以製造習知半導體封裝件的製程需要相對較繁複的步驟。因此，存在著透過簡化製程來降低成本的需求。有鑒於對節省成本與改善效率的需求不斷增加，找出這些問題的解答遂越重要。
如何克服上述該些問題已為人們長期探討，但先前的開發並未教示或建議任何解決方案，所以，熟悉本領域者已長期盼望有解決該些問題的方法。
本發明包括一種積體電路封裝件系統，包括：提供基底(substrate)；將底部晶粒接合至該基底，該底部晶粒具有具成形截面的釋放區；以及，在該底部晶粒的主動面與該基底間連接焊線，該焊線延伸通過該釋放區的成形截面。
本發明某些實施例具有除以上所述之外或替代以上所述的其他態樣。藉由閱讀下列詳細說明並參考附圖後，本技術領域中具有通常知識者將明瞭該等態樣。
以下實施例為充分詳細描述以使熟悉本領域之技藝人士可製造及使用本發明，應瞭解基於此揭露內容可明瞭其他實施例，而且，系統、製程或機構上的變化可在不悖離本發明之範疇下進行。
以下說明將提供許多明確的細節，使能充分瞭解本發明。然而，本發明很顯然地，得於無該些明確細節下施行。為了避免模糊本發明，一些習知的電路、系統組態與製程步驟將不再詳細敘述。同樣地，用來例示本發明實施例的附圖，為局部示意圖而非按比例繪製，特別是某些圖中的尺寸，是為使說明清晰而被特別放大。
揭露及描述在多個實施例中的某些共同特徵，為清楚及容易說明、描述及理解，通常相似及相同的特徵將以相同附圖標記來描述。為便於描述，實施例是以第一實施例、第二實施例等予以編號，並非用以呈現其他意義或用以限定本發明。
為說明起見，本說明書中所用“水平面(horizontal)”一詞，定義成與本發明積體電路平行的平面或表面，而無關於其定向。“垂直”一詞，指與如前項所定義的水平面垂直的方向。其他用語諸如“上”、“以上(above)”、“以下(below)”、“底部”、“頂部”、“側(如“側壁”)”、“較高”、“較低”、“上面的(upper)”、“之上(over)”、以及“之下(under)”，是相對於該水平面而定義出的。
“上(on)”一詞是指在元件間有直接接觸者。本說明書中所用“處理(processing)”一詞，是在形成所述構造時所需步驟，包括：材料的沈積、圖案化、曝光、顯影、蝕刻、清理(cleaning)以及/或是材料的移除。而“系統(system)”一詞，是依照上下文意指本發明的方法及裝置。
參閱第1圖，顯示本發明第一實施例的積體電路封裝件系統100沿著第2圖中線1--1的剖面圖。該積體電路封裝件系統100宜包含釋放區102、具主動面106且該主動面106上具有焊墊108的底部晶粒104、以及具有主動面112的基底110。該釋放區102可藉由自底部晶粒104以及鄰近該焊墊108的主動面106移除材料而形成。
該釋放區102能包含垂直凹陷表面114，該垂直凹陷表面114平行於最接近該焊墊108的底部晶粒側面116。該釋放區102也包含水平凹陷表面118，該水平凹陷表面118平行於該主動面106並且位在該底部晶粒104的主動面106下方。該垂直凹陷表面114與該水平凹陷表面118的交接處能形成用以指示出該水平凹陷表面118低於該主動面106的預定深度，以及該垂直凹陷表面114到與其最接近的底部晶粒104的底部晶粒側面116的預定距離的直線。
具有該垂直凹陷表面114與該水平凹陷表面118的釋放區102能形成具有矩形幾何圖形的成形截面。釋放區102的成形截面是不受限的且可形成任何幾何圖形。該幾何圖形可由下列組合而得：直角、彎曲狀、有刻面(faceted)、有雕刻的(carved)、有紋理的(textured)或其他類似的表面形狀。
該釋放區102的成形截面可根據需求如：可利用的製程、成本、應用、或類似的考量而選擇。底部晶粒104相對於主動面106的一側可利用底部接合層120(如：晶粒黏著劑)而接合至該基底110的主動面112。該底部晶粒側面116以及該釋放區102是位於該主動面112上的底部接合層120的上方。焊墊108可利用焊線124以提供底部晶粒104的電路系統與基底110的主動面112間的連結(connectivity)。焊線124可利用針腳式焊接(stitch bond)122連接至焊墊108。
具有針腳式焊接122的焊線124可延伸遠離該針腳式焊接122，且平行於該主動面106，並行進於該釋放區102內側或穿過該釋放區102內側。可將焊線124置放於與該垂直凹陷表面114以及該水平凹陷表面118的預定距離內。該基底110能由印刷電路板所構成，且該印刷電路與其他部件，如：模組、連接器(connector)、顯示指示器(display indicator)、切換器(switche)、或通常與次一集成層(next level of integration)相關連的類似部件等有連結。應注意，該基底110並不受限，且能夠由封裝基底所構成以形成接合至次一集成層的元件。
具有用以提供電性連接的電路系統的堆疊晶粒126，利用堆疊接合層128，如堆疊黏著劑層板(laminate)或塗層(coating)，接置於該底部晶粒104的主動面106上。底部元件130由該基底110所構成，該基底110中部分主動面112為該底部接合層120所覆蓋。封裝膠體132可選擇地施用於該堆疊晶粒126、焊線124、以及鄰近底部晶粒104的主動面112上，以提供對該積體電路封裝系統100的保護。
如果在次一系統集成層提供保護，如：在該堆疊晶粒126以及基底110上其他鄰近的次一層次電路系統上具有金屬密封蓋，則可省略該封裝膠體132。底部晶粒組件134由接合於該底部元件130上的底部晶粒104所構成，該底部元件130利用焊線124以具有在該底部晶粒104以及該底部元件130間的連結。
意外地發現，由於焊線124的佈線使長度減短且與該底部晶粒104接近而造成電感效應減低，因而使該電路系統效能大大地改善。
參閱第2圖，顯示本發明第一實施例積體電路封裝件系統100的上視圖。顯示了封裝膠體132和主動面112。該基底110中部份該主動面112為該封裝膠體132所覆蓋。應注意，僅圖示出鄰近該封裝膠體132的部分基底110。為清楚例示，其他可被接合至該基底110上的部件並未顯示。
參閱第3圖，顯示本發明第二實施例積體電路封裝件系統300類似第1圖的剖面圖。該積體電路封裝件系統300宜包含釋放區102、具主動面106且主動面106上具有焊墊108的底部晶粒304、以及底部元件130。該釋放區102可藉由自底部晶粒304以及鄰近該焊墊108的主動面106移除材料而形成。
該釋放區102包含有角度的(angled)凹陷表面302，該凹陷表面302是由鄰近焊墊108處至最接近焊墊108的底部晶粒側面116。該有角度的凹陷表面302可形成為以預定角度向最接近焊墊108的底部晶粒側面116傾斜。具有該有角度的凹陷表面302的該釋放區102，可形成具有三角幾何圖形的成形截面。底部晶粒304相對於主動面106的一側可接合至該底部元件130的底部接合層120上。該底部晶粒側面116和該釋放區102是位於該底部元件130上方。
焊墊108可利用焊線124以提供底部晶粒304的電路系統與底部元件130間的連結。焊線124可利用針腳式焊接122連接至焊墊108。焊線124可行進於該釋放區102內側或穿過該釋放區102內側。可將焊線124置放於與該有角度的凹陷表面302的預定距離內。該堆疊晶粒126可利用堆疊接合層128而接置於該底部晶粒304的主動面106上方。該封裝膠體132可選擇地施用於該堆疊晶粒126、焊線124以及該底部元件130的周圍部份上。
底部晶粒組件306可由接合於該底部元件130上的底部晶粒304所構成，該底部元件130利用焊線124以具有在該底部晶粒304以及該底部元件130間的連結。
參閱第4圖，顯示本發明之第三實施例積體電路封裝件系統400類似第1圖的剖面圖。該積體電路封裝系統400宜包含釋放區102、具主動面106且主動面106上具有焊墊108的底部晶粒404、以及底部元件130。該釋放區102可藉由自底部晶粒404以及鄰近該焊墊108的主動面106移除材料而形成。
該釋放區102包含有角度的(angled)彎曲狀凹陷表面(curved recess surface)402，該有角度的彎曲狀凹陷表面402是由鄰近焊墊108處至最接近焊墊108的底部晶粒側面116。該有角度的彎曲狀凹陷表面402可形成為以預定角度向最接近焊墊108的底部晶粒側面116傾斜。該有角度的彎曲狀凹陷表面402包含具有凹進該底部晶粒404中的表面，而形成一下陷的表面。具有該有角度的彎曲狀凹陷表面402的釋放區102，可形成具有圓弧幾何圖形的成形截面。
底部晶粒404相對於主動面106的一側可接合至該底部元件130的底部接合層120上。該底部晶粒側面116和該釋放區102是位於該底部元件130上方。焊墊108可利用焊線124以提供底部晶粒404的電路系統與底部元件130間的連結。焊線124可利用針腳式焊接122連接至焊墊108。焊線124可行進於該釋放區102內側或穿過該釋放區102內側。可將焊線124置放於與該有角度的彎曲狀凹陷表面402的預定距離內。該堆疊晶粒126可利用堆疊接合層128而接置於該底部晶粒404的主動面106上方。
該封裝膠體132可選擇地施用於該堆疊晶粒126、焊線124以及該底部元件130的周圍部份上。底部晶粒組件406可由接合於該底部元件130上的底部晶粒404所構成，該底部元件130利用焊線124以具有在該底部晶粒404以及該底部元件130間的連結。
參閱第5圖，顯示依據本發明第一實施例的晶粒集聚(aggregate dice)的頂面視圖。顯示未進行個別分割(individual singulation)的一部分晶圓(wafer)502，該晶圓502具有多套(replication)底部晶粒104中的一個，曝露的焊墊108鄰近於該主動面106、切割道(saw street)504、以及劃線密封件(scribe seal)506。該劃線密封件506於製造發展製程中對該晶圓502的電路系統提供隔離與保護。
該切割道504可在分割製程中用以分離個別的晶粒，可利用如：切割(sawing)、研磨(grinding)、雷射、水刀(water jet)、或任何其他可使用的分割方法。
第6圖顯示本發明第一實施例的製造步驟，為該晶圓502、該焊墊108、以及該切割道504的局部側視圖示。開口凹槽(open chamfer)602可藉由使用階段移除製程(step removal process)如：研磨、裁切(cutting)或等效之材料移除製程，自鄰近焊墊108的切割道504以及切割道504下方移除部份或全部材料而形成。材料的移除為達到該主動面106下方的預定深度。
參閱第7圖，圖示第一實施例的其他製造步驟，為顯示該晶圓502、開口凹槽602、以及該底部晶粒側面116的局部圖示。沿續該階段移除製程，包含：利用分割製程如：切割、研磨、或等效的裁切製程來實施垂直晶圓裁切702。該等垂直晶圓裁切702垂直地橫截該晶圓502，使該晶圓502隨著每一個垂直晶圓裁切702而被完全切割(complete singulation)。
第1圖中具有釋放區102的底部晶粒104可藉由對該晶圓502的開口凹槽602進行切割製程而於該晶圓502上形成。
參閱第8圖，顯示本發明第四實施例的積體電路封裝件系統800類似第1圖的剖面圖。該積體電路封裝件系統800宜包含底部晶粒組件134、堆疊接合層128、以及堆疊晶粒126，該堆疊晶粒126具有位於堆疊晶粒126後側表面802(backside surface)附近的釋放區102。該釋放區102可包含平行於該堆疊晶粒126的堆疊晶粒側面808的垂直凹陷表面804。
釋放區102也可包含平行於該後側表面802的水平凹陷表面810。該垂直凹陷表面804與該水平凹陷表面810的交接處能形成用以指示出該水平凹陷表面810高於該後側表面802的預定高度，以及該垂直凹陷表面804距離與其最接近的堆疊晶粒側面808的預定長度的直線。該垂直凹陷表面804距離該堆疊晶粒側面808的預定長度可大於該水平凹陷表面810高於該後側表面802的預定高度。
具有該垂直凹陷表面804和該水平凹陷表面810的該釋放區102可形成具有矩形幾何形狀的成形截面。該底部晶粒組件134的焊線124連接該底部晶粒104的主動面106和該基底110，且可延伸通過該堆疊晶粒126的釋放區102。可利用堆疊接合層128將該後側表面802接合至該底部晶粒組件134。封裝膠體132可選擇地施用於該堆疊晶粒126以及該底部晶粒組件134。
參閱第9圖，顯示本發明第五實施例積體電路封裝件系統900類似於第1圖的剖面圖。該積體電路封裝件系統900宜包含底部晶粒組件306、堆疊接合層128、以及堆疊晶粒126，該堆疊晶粒126具有位於該堆疊晶粒126後側表面802附近的釋放區102。該後側表面802可利用該堆疊接合層128而接合至該底部晶粒組件306。
釋放區102可包含自鄰近該堆疊晶粒側面808至該後側表面802的有角度的凹陷表面902。該有角度的凹陷表面902可形成為以預定角度向該後側表面802傾斜。具有該有角度的凹陷表面902的該釋放區102可形成具有三角幾何形狀的成形截面。封裝膠體132可選擇地施用於該堆疊晶粒126和該底部晶粒組件306上。
參閱第10圖，顯示本發明第六實施例積體電路封裝件系統1000類似於第1圖的剖面圖。該積體電路封裝系統1000宜包含該底部晶粒組件406、堆疊接合層128、以及堆疊晶粒126，該堆疊晶粒126具有位於該堆疊晶粒126後側表面802附近的釋放區102。該後側表面802可利用該堆疊接合層128而接合至該底部晶粒組件406。
該釋放區102可包含有角度的彎曲狀凹陷表面1002，該有角度的彎曲狀凹陷表面1002表面是由鄰近該堆疊晶粒側面808到該後側表面802。該有角度的彎曲狀凹陷表面1002可形成為以預定角度向堆疊晶粒側面808傾斜。該有角度的彎曲狀凹陷表面1002可包含包含具有凹進該堆疊晶粒126中的表面，而形成一下陷的表面。具有該有角度的彎曲狀凹陷表面1002的釋放區102，可形成具有圓弧幾何圖形的成形截面。
封裝膠體132可選擇地施用於該堆疊晶粒126和該底部晶粒組件406上。
參閱第11圖，顯示本發明第七實施例積體電路封裝件系統1100類似於第1圖的剖面圖。該積體電路封裝件系統1100宜包含底部晶粒組件134、堆疊接合層128、以及堆疊晶粒1102，該堆疊晶粒1102具有位於該堆疊晶粒1102後側表面802附近的釋放區102。該後側表面802可利用該堆疊接合層128而接合至該底部晶粒組件134。該堆疊晶粒1102中與該後側表面802相對的表面的周長實質上大於該底部晶粒組件134的底部晶粒104的周長。
焊墊108、針腳式焊接122、底部晶粒組件134的焊線124、以及釋放區102不具有堆疊接合層128，並且，鄰近底部晶粒104的焊墊108的部分主動面106實質上也不具有該堆疊接合層128。該釋放區102可包含平行於該堆疊晶粒1102的堆疊晶粒側面808的垂直凹陷表面804。該釋放區102也可包含平行於該後側表面802的水平凹陷表面810。
該垂直凹陷表面804與該水平凹陷表面810的交接處能形成用以指示出該水平凹陷表面810高於該後側表面802的預定高度，以及該垂直凹陷表面804距離與其最接近的堆疊晶粒側面808的預定長度的直線。該垂直凹陷表面804距離該堆疊晶粒側面808的預定長度實質上大於該水平凹陷表面810高於該後側表面802的預定高度。
具有該垂直凹陷表面804以及該水平凹陷表面810的釋放區102可形成具有矩形幾何形狀的成形截面。該釋放區102實質上不具有堆疊接合層128，且可延伸越過焊墊108、鄰近焊墊108的主動面106，針腳式焊接122、焊線124、以及鄰近焊線124的部分基底110。該封裝膠體132可選擇地施用於該堆疊晶粒1102和該底部晶粒組件134上。
參閱第12圖，顯示該第四實施例製造步驟的圖式。所示為用於製造多套(multiple replication)第8圖的堆疊晶粒126的晶圓1202。晶圓1202具有後側表面802的一側宜利用薄化製程(thinning process)如：研磨、磨光(sanding)、或類似的移除方法來進行材料移除。此處理步驟可減少該堆疊晶粒126的厚度並且提供調整過的(conditioned)表面，以改善與第8圖中該堆疊接合層128接合時的黏著特性。
參閱第13圖，圖示第12圖中第四實施例的其他製造步驟。該後側表面802可沿著預定的平面直角座標1302利用後背切割製程(rear dicing process)進行進一步處理。該後背切割製程宜包含寬局部貫穿切割(wide partial penetrating cut)以進入該晶圓1202以及窄分離切割(narrow segregating cut)，使該晶圓1202的切割沿著該預定的平面直角座標1302進行。
該後背切割製程可使第8圖中的堆疊晶粒126與堆疊晶粒126的釋放區102形成。延續該後背切割製程可使多套該堆疊晶粒126被切割且可用於個別單元的組合與整合。
參閱第14圖，圖示第12圖中第四實施例的其他製造步驟。已利用第12圖的薄化製程將材料移除的後側表面802可以利用該堆疊接合層128進行層化(layered)。該堆疊接合層128可施用於該晶圓1202的後側表面802上。
參閱第15圖，圖示第14圖中第四實施例的其他製造步驟。於該後側表面802上的堆疊接合層128可利用後背切割製程沿著預定的平面直角座標1302而作進一步處理。該後背切割製程宜包含寬局部貫穿切割進入該晶圓1202以及窄分離切割，使該晶圓1202沿著該預定的平面直角座標1302而被切割。
該後背切割製程可使第8圖中的堆疊晶粒126與該堆疊晶粒126的釋放區102形成。該後背切割製程之延續可使多套具有該堆疊接合層128的堆疊晶粒126被切割並且可用於個別單元的組合與整合。
參照第16圖，顯示本發明第八實施例積體電路封裝件系統1600類似於第1圖的剖面圖。該積體電路封裝件系統1600宜包含：具有底部晶粒104的底部晶粒組件134、堆疊晶粒126、堆疊接合層128、絕緣層1602以及焊線1604。該絕緣層1602可利用該堆疊接合層128而接合於該底部晶粒組件134上。
該堆疊晶粒126可接置於位元在堆疊接合層128上方的絕緣層1602上，且該堆疊晶粒126的電路系統可利用焊線1604連接至該底部晶粒組件134。封裝膠體132可選擇地施用於堆疊晶粒126、焊線1604、以及底部晶粒組件134上。
參閱第17圖，顯示用於製造本發明實施例積體電路封裝件系統之積體電路封裝件系統1700的流程圖。該系統1700包含：於方塊1702，提供基底；於方塊1704，將底部晶粒接合至該基底，該底部晶粒具有具成形截面的釋放區；以及，於方塊1706，在該底部晶粒的主動面與該基底間連接焊線，該焊線延伸通過該釋放區的成形截面。
更詳細地說，根據本發明實施例，提供積體電路封裝件系統100的方法與裝置之系統，是以下列方式實施：
1.提供具主動面的基底。
2.將底部晶粒接合至該基底，該底部晶粒具有釋放區，該釋放區具有在其周圍的成形截面。
3.在該底部晶粒的主動面與該基底間連接焊線，該焊線中的至少一者延伸通過該釋放區的成形截面。
因此，可發現本發明積體電路封裝件系統方法與裝置提供了重要且且迄今為止尚未為人所知或使用的解決方法、性能、以及功能上的優點。
該所得的製程與架構為直接、經濟、不複雜、多用途且有效率，且能適用於習知技藝而容易應用以有效且經濟地製造大型晶粒積體電路封裝件裝置(large die IC package device)。
參照特定的最佳實施例，本說明書已經對本發明進行揭示。應明瞭，許多的改變、修飾與變化對熟悉本領域者而言，以上的說明將使其變得很明顯。因此，所有該些改變、修飾與變化皆涵蓋於以下的申請專利範圍內。本說明書中所揭示的內容或顯示的附圖是用於解釋本發明，而非用於限制本發明的範疇。
100．．．積體電路封裝件系統
102．．．釋放區
104．．．底部晶粒
106．．．主動面
108．．．焊墊
110．．．基底
112．．．主動面
114．．．垂直凹陷表面
116．．．底部晶粒側面
118．．．水平凹陷表面
120．．．底部接合層
122．．．針腳式焊接
124．．．焊線
126．．．堆疊晶粒
128．．．堆疊接合層
130．．．底部元件
132．．．封裝膠體
134．．．底部晶粒組件
300．．．積體電路封裝件系統
302．．．有角度的凹陷表面
304．．．底部晶粒
306．．．底部晶粒組件
400．．．積體電路封裝件系統
402．．．有角度的彎曲狀凹陷表面
404．．．底部晶粒
406．．．底部晶粒組件
502．．．晶圓
504．．．切割道
506．．．劃線密封件
602．．．開口凹槽
702．．．垂直晶圓裁切
800．．．積體電路封裝件系統
802．．．後側表面
804．．．垂直凹陷表面
808．．．堆疊晶粒側面
810．．．水平凹陷表面
900．．．積體電路封裝件系統
902．．．有角度的凹陷表面
1000．．．積體電路封裝件系統
1002．．．有角度的彎曲狀凹陷表面
1100．．．積體電路封裝件系統
1102．．．堆疊晶粒
1202．．．晶圓
1302．．．平面直角座標
1600．．．積體電路封裝件系統
1602．．．絕緣層
1604．．．焊線
1700．．．積體電路封裝件系統的流程圖
1702．．．步驟
1704．．．步驟
1706．．．步驟
第1圖為本發明第一實施例的積體電路封裝件系統沿著第2圖中線1--1的剖面圖；
第2圖為本發明第一實施例的積體電路封裝件系統的上視圖；
第3圖為本發明第二實施例的積體電路封裝件系統類似第1圖的剖面圖；
第4圖為本發明第三實施例的積體電路封裝件系統類似第1圖的剖面圖；
第5圖為依據本發明第一實施例的晶粒集聚(aggregate dice)的頂面視圖；
第6圖為圖示本發明第一實施例的製造步驟；
第7圖為圖示本發明第一實施例的其他製造步驟；
第8圖為本發明第四實施例的積體電路封裝件系統類似第1圖的剖面圖；
第9圖為本發明第五實施例的積體電路封裝件系統類似第1圖的剖面圖；
第10圖為本發明第六實施例的積體電路封裝件系統類似第1圖的剖面圖；
第11圖為本發明第七實施例的積體電路封裝件系統類似第1圖的剖面圖；
第12圖為圖示本發明第四實施例的製造步驟；
第13圖為圖示第12圖中本發明第四實施例的其他製造步驟；
第14圖為圖示第12圖中本發明第四實施例的其他製造步驟；
第15圖為圖示第14圖中本發明第四實施例的其他製造步驟；
第16圖為本發明第八實施例的積體電路封裝件系統類似第1圖的剖面圖；以及
第17圖為本發明實施例的積體電路封裝件系統的製造流程圖。
1700．．．積體電路封裝件系統的流程圖
1702、1704、1706．．．步驟

Claims (20)

  1. 一種積體電路封裝件系統，包括：提供基底；將底部晶粒接合至該基底，該底部晶粒具有具成形截面的釋放區；以及在該底部晶粒的主動面與該基底間連接焊線，該焊線延伸通過該釋放區的該成形截面。
  2. 如申請專利範圍第1項之系統，其中，連接該焊線包括在該底部晶粒的主動面與該基底間的針腳式焊接，該焊線延伸通過該釋放區的該成形截面。
  3. 如申請專利範圍第1項之系統，其中，將該底部晶粒接合至該基底，該底部晶粒包含具該成形截面的該釋放區，具該成形截面的該釋放區係成形為矩形、三角形或彎曲狀。
  4. 如申請專利範圍第1項之系統，進一步包括：在該底部晶粒上接置堆疊晶粒；以及在該堆疊晶粒與該底部晶粒間接合堆疊接合層，該堆疊接合層覆蓋一部份該焊線。
  5. 如申請專利範圍第1項之系統，進一步包括：在該底部晶粒上接置堆疊晶粒，該堆疊晶粒包含具成形截面的釋放區延伸越過該焊線與該底部晶粒的該主動面的連接。
  6. 一種積體電路封裝件系統，包括：提供具有主動面的基底；將底部晶粒接合至該基底，該底部晶粒具有釋放區，該釋放區具有在其周圍的成形截面；以及在該底部晶粒的主動面與該基底間連接焊線，該焊線中的至少一者延伸通過該釋放區的該成形截面。
  7. 如申請專利範圍第6項之系統，進一步包括針腳式焊接，連接平行於該底部晶粒的該主動面之該焊線。
  8. 如申請專利範圍第6項之系統，進一步包括：在該底部晶粒上接置堆疊晶粒；以及在該堆疊晶粒上接合絕緣層，該絕緣層位於該堆疊晶粒與該底部晶粒間。
  9. 如申請專利範圍第6項之系統，進一步包括：在該底部晶粒上接置堆疊晶粒，該堆疊晶粒包含具成形截面的釋放區；在該堆疊晶粒與該底部晶粒間接合堆疊接合層，該堆疊接合層覆蓋一部份該焊線；以及其中：在該底部晶粒的主動面與該基底間連接焊線，該焊線中的至少一者延伸通過該堆疊晶粒的該釋放區的該成形截面。
  10. 如申請專利範圍第6項之系統，進一步包括：在該底部晶粒上接置堆疊晶粒，該堆疊晶粒包含具成形截面的釋放區延伸越過部份的該主動面、該焊線與部份鄰近該焊線的該基底。
  11. 一種積體電路封裝件系統，包括：基底；接合至該基底的底部晶粒，該底部晶粒包含具成形截面的釋放區；以及連接在該底部晶粒的主動面與該基底間的焊線，該焊線延伸通過該釋放區的該成形截面。
  12. 如申請專利範圍第11項之系統，其中，該焊線包括連接在該底部晶粒的主動面與該基底間的針腳式焊接，該焊線延伸通過該釋放區的該成形截面。
  13. 如申請專利範圍第11項之系統，其中，該底部晶粒係接合至該基底，該底部晶粒包含具該成形截面的該釋放區，具該成形截面的該釋放區係成形為矩形、三角形或彎曲狀。
  14. 如申請專利範圍第11項之系統，復包括：堆疊晶粒，其係接置在該底部晶粒上；以及堆疊接合層，其係將該堆疊晶粒與該底部晶粒接合，該堆疊接合層覆蓋一部份該焊線。
  15. 如申請專利範圍第11項之系統，復包括接置在該底部晶粒上之堆疊晶粒，該堆疊晶粒包含具成形截面的釋放區延伸越過該焊線與該底部晶粒的該主動面的連接。
  16. 如申請專利範圍第11項之系統，其中：該基底具有主動面；該底部晶粒接合至該基底，該底部晶粒具有釋放區，該釋放區具有在其周圍的成形截面；以及該焊線連接在該底部晶粒的主動面與該基底間，該焊線中的至少一者延伸通過該釋放區的該成形截面。
  17. 如申請專利範圍第16項之系統，進一步包括針腳式焊接，連接平行於該底部晶粒的該主動面之該焊線。
  18. 如申請專利範圍第16項之系統，復包括：接置於該底部晶粒上之堆疊晶粒；以及接合於該堆疊晶粒上的絕緣層，該絕緣層位於該堆疊晶粒與該底部晶粒間。
  19. 如申請專利範圍第16項之系統，復包括：接置於該底部晶粒上之堆疊晶粒，該堆疊晶粒具有具成形截面之釋放區；堆疊接合層，將該堆疊晶粒與該底部晶粒接合，該堆疊接合層覆蓋一部份該焊線；以及其中：連接在該底部晶粒的主動面與該基底間的焊線，該焊線中的至少一者延伸通過該堆疊晶粒的該釋放區的該成形截面。
  20. 如申請專利範圍第16項之系統，復包括接置在該底部晶粒上的堆疊晶粒，該堆疊晶粒包含具成形截面的釋放區延伸越過部份的該主動面、該焊線與部份鄰近該焊線的該基底。
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