CN108603113B - 荧光体及其制造方法、含荧光体构件以及发光装置或投影仪 - Google Patents

荧光体及其制造方法、含荧光体构件以及发光装置或投影仪 Download PDF

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CN108603113B
CN108603113B CN201780009385.XA CN201780009385A CN108603113B CN 108603113 B CN108603113 B CN 108603113B CN 201780009385 A CN201780009385 A CN 201780009385A CN 108603113 B CN108603113 B CN 108603113B
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phosphor
single crystal
light
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yag
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CN108603113A (zh
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猪股大介
新井祐辅
岛村清史
恩卡纳西翁·安东尼亚·加西亚·比略拉
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National Institute for Materials Science
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Tamura Corp
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    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/30—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6
    • C01F17/32—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6 oxide or hydroxide being the only anion, e.g. NaCeO2 or MgxCayEuO
    • C01F17/34—Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
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    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
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    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
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    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
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    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties
    • C01P2006/37—Stability against thermal decomposition

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  • Engineering & Computer Science (AREA)
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  • Inorganic Chemistry (AREA)
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CN201780009385.XA 2016-02-02 2017-02-02 荧光体及其制造方法、含荧光体构件以及发光装置或投影仪 Active CN108603113B (zh)

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JP2016018448A JP6871665B2 (ja) 2016-02-02 2016-02-02 蛍光体含有部材及びその製造方法、及び発光装置又はプロジェクター
JP2016-018448 2016-02-02
PCT/JP2017/003793 WO2017135373A1 (ja) 2016-02-02 2017-02-02 蛍光体及びその製造方法、蛍光体含有部材、及び発光装置又はプロジェクター

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CN108603113A CN108603113A (zh) 2018-09-28
CN108603113B true CN108603113B (zh) 2022-07-05

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US (1) US11525082B2 (enExample)
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JP6917244B2 (ja) * 2017-08-23 2021-08-11 日本特殊陶業株式会社 蛍光体ホイール、ホイールデバイスおよびプロジェクター
JP7224579B2 (ja) * 2018-02-09 2023-02-20 株式会社タムラ製作所 波長変換部材
JP7037082B2 (ja) * 2019-09-27 2022-03-16 日亜化学工業株式会社 希土類アルミン酸塩蛍光体の製造方法、希土類アルミン酸塩蛍光体及び発光装置
JP7429346B2 (ja) * 2019-10-03 2024-02-08 国立研究開発法人物質・材料研究機構 波長変換部材
EP4443120A3 (en) 2020-02-13 2024-12-25 Hamamatsu Photonics K.K. Imaging unit and measurement device
JP2022039095A (ja) 2020-08-27 2022-03-10 セイコーエプソン株式会社 蛍光体粒子、波長変換素子、光源装置、蛍光体粒子の製造方法、波長変換素子の製造方法、及びプロジェクター

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CN1560332A (zh) * 2004-02-23 2005-01-05 中国科学院上海光学精密机械研究所 掺三价铈离子的钇铝石榴石闪烁晶体的制备方法
CN103820859A (zh) * 2013-12-31 2014-05-28 西南技术物理研究所 掺杂钇铝石榴石陶瓷转变为单晶的制备方法
WO2015060254A1 (ja) * 2013-10-23 2015-04-30 株式会社光波 単結晶蛍光体及び発光装置
CN105283526A (zh) * 2013-10-23 2016-01-27 株式会社光波 单晶荧光体、含荧光体构件以及发光装置

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JP4583076B2 (ja) * 2004-06-11 2010-11-17 スタンレー電気株式会社 発光素子
US20150083967A1 (en) * 2012-04-24 2015-03-26 Koha Co., Ltd. Phosphor, Method for Manufacturing same, and light-emitting device
DE112016003272T5 (de) * 2015-07-22 2018-04-05 Panasonic Intellectual Property Management Co., Ltd. Granatverbindung und Verfahren zu deren Herstellung, lichtemittierende Vorrichtung und Dekorgegenstand, bei denen die Granatverbindung verwendet wird, und Verfahren zur Verwendung der Granatverbindung
JP2017120864A (ja) * 2015-12-28 2017-07-06 株式会社タムラ製作所 発光装置
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WO2015060254A1 (ja) * 2013-10-23 2015-04-30 株式会社光波 単結晶蛍光体及び発光装置
CN105283526A (zh) * 2013-10-23 2016-01-27 株式会社光波 单晶荧光体、含荧光体构件以及发光装置
CN103820859A (zh) * 2013-12-31 2014-05-28 西南技术物理研究所 掺杂钇铝石榴石陶瓷转变为单晶的制备方法

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WO2017135373A1 (ja) 2017-08-10
EP3412752B1 (en) 2024-11-13
JP6871665B2 (ja) 2021-05-12
US20210122975A1 (en) 2021-04-29
EP3412752A1 (en) 2018-12-12
US11525082B2 (en) 2022-12-13
JP2017137394A (ja) 2017-08-10
CN108603113A (zh) 2018-09-28
EP3412752A4 (en) 2019-09-25

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