CN108597997A - GaN基器件欧姆接触电极的制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 229910001449 indium ion Inorganic materials 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims abstract description 10
- 239000007924 injection Substances 0.000 claims abstract description 10
- 230000026267 regulation of growth Effects 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 238000002513 implantation Methods 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000006641 stabilisation Effects 0.000 abstract description 2
- 238000011105 stabilization Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 92
- 239000000243 solution Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
本发明适用于半导体技术领域,提供了一种GaN基器件欧姆接触电极的制备方法,该方法包括以下步骤:在器件的上表面生长第一介质层;在所述第一介质层与欧姆接触电极区对应的区域和所述器件的所述欧姆接触电极区注入硅离子和/或铟离子;在所述第一介质层的上表面生长第二介质层;通过高温退火工艺激活所述硅离子和/或所述铟离子,形成N型重掺杂;分别去除所述第一介质层和所述第二介质层与所述欧姆接触电极区对应的部分;在所述器件的所述欧姆接触电极区的上表面生长金属层,形成欧姆接触电极。本发明制备的欧姆接触电极能够保证金属层表面平整、边缘光滑整齐,器件击穿电压稳定、可靠性和寿命长。
Description
技术领域
本发明属于半导体技术领域,尤其涉及一种GaN基器件欧姆接触电极的制备方法。
背景技术
宽禁带半导体GaN具有禁带宽度大、与AlGaN结合二维电子气密度高、击穿场强高、电子饱和漂移速度高等优点,在高温微波功率器件以及高速电力电子器件制造领域具有很大的潜力。在GaN基器件中,良好的欧姆接触电极不仅可以改善器件的性能,而且还利于提高器件的使用寿命。传统的形成欧姆接触电极的方法是将金属层在高于800℃的温度下经快速热退火形成欧姆接触电极,但是,这种方法形成的欧姆接触电极质量差,在退火后存在金属表面形貌粗糙、金属边缘不齐整等缺点,会造成器件容易发生电击穿现象、器件可靠性和寿命降低等问题。
发明内容
有鉴于此,本发明实施例提供了一种GaN基器件欧姆接触电极的制备方法,以解决现有技术中形成的欧姆接触电极质量差的问题。
本发明实施例的提供了一种GaN基器件欧姆接触电极的制备方法,包括以下步骤:
步骤S1:在器件的上表面生长第一介质层;
步骤S2:在所述第一介质层与欧姆接触电极区对应的区域和所述器件的所述欧姆接触电极区注入硅离子和/或铟离子;
步骤S3:在所述第一介质层的上表面生长第二介质层;
步骤S4:通过高温退火工艺激活所述硅离子和/或所述铟离子,形成N型重掺杂;
步骤S5:分别去除所述第一介质层和所述第二介质层与所述欧姆接触电极区对应的部分;
步骤S6:在所述器件的所述欧姆接触电极区的上表面生长金属层,形成欧姆接触电极。
可选的,所述步骤S2具体包括以下步骤:
步骤S21:在所述第一介质层与第一区域对应的部分的上表面涂覆第一光刻胶层,其中,所述第一区域为所述器件除所述欧姆接触电极区以外的区域;
步骤S22:通过离子注入法注入所述硅离子和/或所述铟离子;
步骤S23:去除所述第一光刻胶层。
可选的,所述步骤S3和步骤S4具体包括以下步骤:
步骤S31:在所述第二介质层与所述第一区域对应的部分的上表面涂覆第二光刻胶层;
步骤S32:通过干法刻蚀工艺分别去除所述第一介质层和所述第二介质层与所述欧姆接触电极区对应的部分;
步骤S33:通过电子束蒸发工艺在所述器件的上表面蒸发所述金属层;
步骤S34:去除所述第二光刻胶层。
可选的,所述第一介质层为SiN层或SiO2层;所述第一介质层的厚度为 10纳米至50纳米。
可选的,所述第二介质层为SiN层或AlN层;所述第二介质层的厚度为10 纳米至200纳米。
可选的,所述硅离子的注入能量为30keV至200keV,注入剂量为1014cm-2至1016cm-2;所述铟离子的注入能量为30keV至200keV,注入剂量为1013cm-2至1016cm-2;
可选的,所述金属层包括Ti/Au层、Ti/Pt/Au层、Ti/Al层或Ti/Al/Ni/Au 层。
可选的,所述硅离子和/或铟离子的注入深度为80纳米至120纳米。
可选的,所述高温退火工艺的工艺条件为:退火温度为850℃至1400℃,时间为10分钟至60分钟。
本发明实施例与现有技术相比存在的有益效果是:本发明实施例通过在器件的上表面生长第一介质层作为离子注入散射层,在器件的欧姆接触电极区和第一介质层与欧姆接触电极区对应的部分注入硅离子和/或铟离子,在第一介质层的上表面生长第二介质层作为保护层,并通过高温退火工艺激活硅离子和/ 或铟离子,形成N型重掺杂,最后,去除第一介质层和第二介质层与欧姆接触电极区对应的部分,露出器件的欧姆接触电极区,在器件的欧姆接触电极区的上表面生长金属层,即可形成欧姆接触电极,由于金属层不需要经过高温退火工艺,从而制备出质量良好的欧姆接触电极,能够保证金属层表面平整、边缘光滑整齐,器件击穿电压稳定、可靠性和寿命长。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的GaN基器件欧姆接触电极的制备方法的实现流程示意图;
图2是本发明实施例提供的GaN基器件欧姆接触电极的制备方法的结构实现流程示意图。
具体实施方式
以下描述中,为了说明而不是为了限定,提出了诸如特定系统结构、技术之类的具体细节,以便透彻理解本发明实施例。然而,本领域的技术人员应当清楚,在没有这些具体细节的其它实施例中也可以实现本发明。在其它情况中,省略对众所周知的系统、装置、电路以及方法的详细说明,以免不必要的细节妨碍本发明的描述。
为了说明本发明所述的技术方案,下面通过具体实施例来进行说明。
请参考图1,GaN基器件欧姆接触电极的制备方法包括以下步骤:
步骤S1,在器件的上表面生长第一介质层。
在本发明实施例中,第一介质层为SiN层或SiO2层,厚度为10纳米至50 纳米,作为后续工艺中离子注入的散射层。
请参考图2(1),本发明实施例中的GaN基器件包括GaN衬底201和AlGaN 层202,GaN基器件分为欧姆接触电极区和第一区域,其中第一区域为所述器件除欧姆接触电极区以外的区域,在GaN基器件的欧姆接触电极区制备欧姆接触电极。请参考图2(2),通过化学气相沉积法(chemical vapor deposition,CVD) 在AlGaN层202的上表面淀积第一介质层203,作为离子注入的散射层。
步骤S2,在所述第一介质层与欧姆接触电极区对应的区域和所述器件的所述欧姆接触电极区注入硅离子和/或铟离子。
在本发明实施例中,硅离子的注入能量为30keV至200keV,注入剂量为 1014cm-2至1016cm-2。铟离子的注入能量为30keV至200keV,注入剂量为1013cm-2至1016cm-2。
可选的,步骤S2的具体实现方式为:在所述第一介质层与第一区域对应的部分的上表面涂覆第一光刻胶层,其中,所述第一区域为所述器件除所述欧姆接触电极区以外的区域;通过离子注入法注入所述硅离子和/或所述铟离子;去除所述第一光刻胶层。
请参考图2(3)至图2(5),通过涂胶、曝光、显影、坚膜工艺,在第一介质层203与第一区域对应的部分的上表面覆盖第一光刻胶层204,露出第一介质层203与欧姆接触电极区对应的部分,其中,第一光刻胶层204的厚度为2微米至5微米。再通过离子注入法在器件中注入硅离子和/或铟离子,其中,只有露出的第一介质层204与欧姆接触电极区对应的部分和器件的欧姆接触电极区被注入离子,如图2(5)中205所示的虚线区域,其余部分由于有第一光刻胶层204保护不会被注入离子,最后,去除第一光刻胶层204。
步骤S3,在所述第一介质层的上表面生长第二介质层。
在本发明实施例中,请参考图2(6),第二介质层206包括SiN层或AlN 层,第二介质层206的厚度为10纳米至200纳米。第二介质层206作为后续高温退火工艺的保护层。通过CVD在第一介质层203的上表面生长第二介质层 206。
步骤S4,通过高温退火工艺激活所述硅离子和/或所述铟离子,形成N型重掺杂。
在本发明实施例中,退火温度为850℃至1400℃,时间为10分钟至60分钟。通过高温退火工艺激活注入的硅离子和/或铟离子,形成N型重掺杂。
步骤S5,分别去除所述第一介质层和所述第二介质层与所述欧姆接触电极区对应的部分。
步骤S6,在所述器件的所述欧姆接触电极区的上表面生长金属层,形成欧姆接触电极。
在本发明实施例中,金属层为Ti/Au层、Ti/Pt/Au层、Ti/Al层或Ti/Al/Ni/Au 层。
请参考图2(7)至图2(10),步骤S5和步骤S6的具体实现方式为:在所述第二介质层206的与所述第一区域对应的部分的上表面域涂覆第二光刻胶层207;通过干法刻蚀工艺分别去除所述第一介质层203和所述第二介质层206 与所述欧姆接触电极区对应的部分;通过电子束蒸发工艺蒸发所述金属层208;去除所述第二光刻胶层207。
在本发明实施例中,通过涂胶、曝光、显影、坚膜工艺,在第二介质层206 与第一区域对应的部分的上表面覆盖第二光刻胶层207,露出第二介质层206 与欧姆接触电极区对应的部分,其中,第二光刻胶层207的厚度为1微米至2 微米。通过干法刻蚀工艺分别去除第一介质层203和第二介质层206与欧姆接触区域对应的部分,露出器件的欧姆接触区域。通过电子束蒸发工艺蒸发金属层208,最后去除第二光刻胶层207。金属层208与N型重掺杂的AlGaN层202 接触形成欧姆接触。
本发明实施例通过在器件的上表面生长第一介质层203作为离子注入散射层,在器件的欧姆接触电极区和与欧姆接触电极区对应的第一介质层203中注入硅离子和/或铟离子,在第一介质层203的上表面生长第二介质层206作为保护层,并通过高温退火工艺激活硅离子和/或铟离子,形成N型重掺杂,最后,去除第一介质层203和第二介质层206与欧姆接触电极区对应的部分,露出器件的欧姆接触电极区,在器件的欧姆接触电极区的上表面生长金属层208,即可形成欧姆接触电极,由于金属层不需要经过高温退火工艺,从而制备出质量良好的欧姆接触电极,能够保证金属层表面平整、边缘光滑整齐,器件击穿电压稳定、可靠性和寿命长。
应理解,上述实施例中各步骤的序号的大小并不意味着执行顺序的先后,各过程的执行顺序应以其功能和内在逻辑确定,而不应对本发明实施例的实施过程构成任何限定。
以上所述实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围,均应包含在本发明的保护范围之内。
Claims (9)
1.一种GaN基器件欧姆接触电极的制备方法,其特征在于,包括以下步骤:
步骤S1:在器件的上表面生长第一介质层;
步骤S2:在所述第一介质层与欧姆接触电极区对应的区域和所述器件的所述欧姆接触电极区注入硅离子和/或铟离子;
步骤S3:在所述第一介质层的上表面生长第二介质层;
步骤S4:通过高温退火工艺激活所述硅离子和/或所述铟离子,形成N型重掺杂;
步骤S5:分别去除所述第一介质层和所述第二介质层与所述欧姆接触电极区对应的部分;
步骤S6:在所述器件的所述欧姆接触电极区的上表面生长金属层,形成欧姆接触电极。
2.如权利要求1所述的GaN基器件欧姆接触电极的制备方法,其特征在于,所述步骤S2具体包括以下步骤:
步骤S21:在所述第一介质层与第一区域对应的部分的上表面涂覆第一光刻胶层,其中,所述第一区域为所述器件除所述欧姆接触电极区以外的区域;
步骤S22:通过离子注入法注入所述硅离子和/或所述铟离子;
步骤S23:去除所述第一光刻胶层。
3.如权利要求1所述的GaN基器件欧姆接触电极的制备方法,其特征在于,所述步骤S3和步骤S4具体包括以下步骤:
步骤S31:在所述第二介质层与所述第一区域对应的部分的上表面涂覆第二光刻胶层;
步骤S32:通过干法刻蚀工艺分别去除所述第一介质层和所述第二介质层与所述欧姆接触电极区对应的部分;
步骤S33:通过电子束蒸发工艺在所述器件的上表面蒸发所述金属层;
步骤S34:去除所述第二光刻胶层。
4.如权利要求1所述的GaN基器件欧姆接触电极的制备方法,其特征在于,所述第一介质层为SiN层或SiO2层;所述第一介质层的厚度为10纳米至50纳米。
5.如权利要求1所述的GaN基器件欧姆接触电极的制备方法,其特征在于,所述第二介质层为SiN层或AlN层;所述第二介质层的厚度为10纳米至200纳米。
6.如权利要求1所述的GaN基器件欧姆接触电极的制备方法,其特征在于,所述硅离子的注入能量为30keV至200keV,注入剂量为1014cm-2至1016cm-2;所述铟离子的注入能量为30keV至200keV,注入剂量为1013cm-2至1016cm-2。
7.如权利要求1所述的GaN基器件欧姆接触电极的制备方法,其特征在于,所述金属层包括Ti/Au层、Ti/Pt/Au层、Ti/Al层或Ti/Al/Ni/Au层。
8.如权利要求1所述的GaN基器件欧姆接触电极的制备方法,其特征在于,所述硅离子和/或铟离子的注入深度为80纳米至120纳米。
9.如权利要求1至8任一项所述的GaN基器件欧姆接触电极的制备方法,其特征在于,所述高温退火工艺的工艺条件为:退火温度为850℃至1400℃,时间为10分钟至60分钟。
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