JP2015179787A - 半導体基板の製造方法、半導体基板および半導体装置 - Google Patents
半導体基板の製造方法、半導体基板および半導体装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 189
- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 93
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000012535 impurity Substances 0.000 claims description 44
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000001773 deep-level transient spectroscopy Methods 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000005092 sublimation method Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 178
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 171
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
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- 239000000463 material Substances 0.000 description 4
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- 230000001133 acceleration Effects 0.000 description 3
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- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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Abstract
【解決手段】実施形態の半導体基板の製造方法は、SiC基板を気相成長法により形成し、SiC基板表面にC(炭素)を導入し、SiC基板上にn型SiC層をエピタキシャル成長法により形成する。
【選択図】図4
Description
本実施形態の半導体基板は、DLTS(Deep Level Transient Specroscopy)により測定されるZ1/2準位密度が1×1011cm−3以下の領域を有するSiC基板を備える。
図3は、本実施形態の変形例の半導体基板の模式断面図である。半導体基板200は、SiC基板10が、p+型の単結晶SiC基板である点で、第1の実施形態の半導体基板100と異なっている。
本実施形態の半導体基板の製造方法は、SiC基板を気相成長法により形成し、SiC基板にC(炭素)を導入し、SiC基板上にn型SiC層をエピタキシャル成長法により形成する。本実施形態の半導体基板の製造方法は、第1の実施形態の半導体基板を用いる製造方法である。したがって、第1の実施形態と重複する内容については、一部記述を省略する。また、本実施形態の半導体基板は、上記製造方法を用いて製造される半導体基板である。
図5は、本実施形態の変形例の半導体基板の模式断面図である。半導体基板400は、SiC基板10が、p+型の単結晶SiC基板である点で、第2の実施形態の半導体基板100と異なっている。
本実施形態の半導体基板の製造方法は、SiC基板へのC(炭素)の導入が、SiC基板表面に選択的に行われること以外は、第2の実施形態と同様である。また、本実施形態の半導体基板は、上記領域が、SiC基板の表面に選択的に設けられること以外は、第2の実施形態と同様である。したがって、第2の実施形態と重複する内容については、一部記述を省略する。
11 高炭素濃度領域(領域)
12 n型SiC層
100 半導体基板
200 半導体基板
300 半導体基板
400 半導体基板
500 半導体基板
600 PINダイオード(半導体装置)
Claims (16)
- SiC基板を気相成長法により形成し、
前記SiC基板にC(炭素)を導入し、
前記SiC基板上にn型SiC層をエピタキシャル成長法により形成することを特徴とする半導体基板の製造方法。 - 前記n型SiC層の形成が、前記SiC基板の形成よりも低温で行われることを特徴とする請求項1記載の半導体基板の製造方法。
- 前記気相成長法が昇華法または高温CVD(Chemical Vapor Deposition)法であることを特徴とする請求項1または請求項2記載の半導体基板の製造方法。
- 前記C(炭素)の導入が、イオン注入法により行われることを特徴とする請求項1ないし請求項3いずれか一項記載の半導体基板の製造方法。
- 前記C(炭素)の導入が、前記SiC基板に選択的に行われることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体基板の製造方法。
- 前記SiC基板の形成が1700℃以上で行われることを特徴とする請求項1ないし請求項5いずれか一項記載の半導体基板の製造方法。
- 前記SiC基板中のn型またはp型不純物の不純物濃度が、5×1018cm−3以上であることを特徴とする請求項1ないし請求項6いずれか一項記載の半導体基板の製造方法。
- DLTS(Deep Level Transient Specroscopy)により測定されるZ1/2準位密度が1×1011cm−3以下の領域を有するSiC基板を備えることを特徴とする半導体基板。
- 前記SiC基板上に前記SiC基板のn型およびp型不純物の不純物濃度よりも、n型不純物の不純物濃度が低いn型SiC層を、さらに備えることを特徴とする請求項8記載の半導体基板。
- 前記SiC基板中のn型またはp型不純物の不純物濃度が、5×1018cm−3以上であることを特徴とする請求項8または請求項9記載の半導体基板。
- 前記n型SiC層の膜厚が50μm以上であることを特徴とする請求項9記載の半導体基板。
- 前記領域が、前記SiC基板に選択的に設けられることを特徴とする請求項8ないし請求項11いずれか一項記載の半導体基板。
- DLTS(Deep Level Transient Specroscopy)により測定されるZ1/2準位密度が1×1011cm−3以下の領域を有するSiC基板と、
前記SiC基板上に設けられ、前記SiC基板のn型およびp型不純物の不純物濃度よりも、n型不純物の不純物濃度が低いn型SiC層と、
を備えることを特徴とする半導体装置。 - 前記SiC基板中のn型またはp型不純物の不純物濃度が、5×1018cm−3以上であることを特徴とする請求項13記載の半導体装置。
- 前記n型SiC層の膜厚が50μm以上であることを特徴とする請求項13または請求項14記載の半導体装置。
- 前記領域が、前記SiC基板と前記n型SiC層との界面の前記SiC基板側に選択的に設けられることを特徴とする請求項13ないし請求項15いずれか一項記載の半導体装置。
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US14/614,699 US9941361B2 (en) | 2014-03-19 | 2015-02-05 | Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device |
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JP2016018861A (ja) * | 2014-07-07 | 2016-02-01 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
US10651280B2 (en) | 2018-03-02 | 2020-05-12 | Kabushiki Kaisha Toshiba | Silicon carbide semiconductor device |
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