JPWO2007032214A1 - 炭化珪素半導体素子の製造方法 - Google Patents
炭化珪素半導体素子の製造方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 202
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 190
- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 44
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
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- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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Abstract
Description
前記バイポーラ型炭化珪素半導体素子の製造工程の最後に、該バイポーラ型炭化珪素半導体素子を300℃以上の温度で加熱することを特徴とする。
前記炭化珪素半導体または炭化珪素半導体素子を300℃以上の温度で加熱する工程と、
を含むことを特徴とする。
2 炭化珪素エピタキシャル膜
2a n型エピタキシャル膜
2b p型エピタキシャル膜(またはp型注入層)
3 ベーサルプレーン転位
4 スレッディングエッジ転位
5 結晶面
6 線状欠陥
7 点欠陥
8 環状欠陥
11a 積層欠陥(不完全転位ループ)
11b 積層欠陥(完全転位ループ)
12 SiCエピタキシャル膜の表面
13 (0001)Si面
21 炭化珪素単結晶基板
23 ドリフト層
24 p型接合層
25 p+型コンタクト層
26 JTE
27 酸化膜
28 カソード電極
29 アノード電極
θ オフ角
実施例
以下、実施例により本発明を説明するが、本発明はこれらの実施例に限定されるものではない。
[実施例1]
図2に示したpnダイオードを試験用に作製した。改良レーリー法により成長させたインゴットをオフ方向[11−20]、オフ角度8°でスライスし、表面を鏡面処理したn型の4H−炭化珪素(0001)基板(キャリア密度8×1018cm-3、厚さ400μm)の上にCVD法によって窒素ドープn型炭化珪素層(ドナー密度5×1014cm-3、膜厚40μm)とアルミニウムドープp型炭化珪素層(p型接合層:アクセプタ密度5×1017cm-3、厚さ1.5μm、およびp+コンタクト層:アクセプタ密度1×1018cm-3、厚さ0.5μm)を順次エピタキシャル成長させた。
[実施例2〜4]
実施例1で作製したものと同様のpnダイオードに対して、加熱温度を変えた以外は実施例1と同様の条件にて、400℃(実施例2)、500℃(実施例3)、600℃(実施例4)の加熱処理を行った。その後、実施例1と同様の電流通電試験を行った。続いて、これらのpnダイオードのフォトルミネッセンス像を観察したところ、図4に示したように、400℃の加熱では積層欠陥の明らかな低減が見られ、加熱温度を高めると共に積層欠陥はさらに低減した。
[比較例1]
実施例1で作製したものと同様のpnダイオードに対して、加熱処理を行わないで、実施例1と同様の電流通電試験を行った。続いて、これらのpnダイオードのフォトルミネッセンス像を観察したところ、図4に示したように、面積が大きい多数の積層欠陥が観察された。
[比較例2、3]
実施例1で作製したものと同様のpnダイオードに対して、加熱温度を200℃(比較例2)、250℃(比較例3)とした以外は実施例1と同様の条件にて加熱処理を行った。その後、実施例1と同様の電流通電試験を行った。続いて、これらのpnダイオードのフォトルミネッセンス像を観察したところ、加熱処理を行わなかった比較例1の場合と同程度の面積が大きい多数の積層欠陥が観察された。
[実施例5]
実施例1で作成したものと同様のpnダイオードに対して、加熱処理を行う前に、1mW以上の光強度を有する波長350nm〜365nmのレーザー光またはLED光を、これらのpnダイオードの動作領域となるSiC単結晶領域に対して照射した。その後、実施例1と同様の条件にて加熱処理を行った。
Claims (10)
- 炭化珪素単結晶基板の表面から成長させた炭化珪素エピタキシャル膜の内部で電流通電時に電子と正孔が再結合するバイポーラ型炭化珪素半導体素子の製造方法であって、
前記バイポーラ型炭化珪素半導体素子の製造工程の最後に、該バイポーラ型炭化珪素半導体素子を300℃以上の温度で加熱することを特徴とするバイポーラ型炭化珪素半導体素子の製造方法。 - 前記バイポーラ型炭化珪素半導体素子を300℃以上の温度で加熱する工程を、電極を形成する工程の後に行うことを特徴とする請求項1に記載のバイポーラ型炭化珪素半導体素子の製造方法。
- 前記バイポーラ型炭化珪素半導体素子を300℃以上の温度で加熱する工程を、少なくとも全てのイオン注入工程よりも後に行うことを特徴とする請求項1に記載のバイポーラ型炭化珪素半導体素子の製造方法。
- 前記バイポーラ型炭化珪素半導体素子を300℃以上の温度で加熱する工程を、少なくとも素子表面を保護するための酸化膜を形成した当該素子表面における電極を形成する部位を含む各部位の酸化膜を除去し、当該部位においてエピタキシャル膜を露出させる工程よりも後に行うことを特徴とする請求項1に記載のバイポーラ型炭化珪素半導体素子の製造方法。
- 前記バイポーラ型炭化珪素半導体素子は、パッケージに実装されるバイポーラ型半導体素子であり、
前記バイポーラ型炭化珪素半導体素子を300℃以上の温度で加熱する工程によって該バイポーラ型炭化珪素半導体素子の製造を完了し、その後、得られたバイポーラ型炭化珪素半導体素子はパッケージに実装されることを特徴とする請求項1〜4のいずれかに記載のバイポーラ型炭化珪素半導体素子の製造方法。 - 六方晶の炭化珪素単結晶基板の表面から六方晶の炭化珪素エピタキシャル膜を成長させることを特徴とする請求項1〜5のいずれかに記載のバイポーラ型炭化珪素半導体素子の製造方法。
- 六方晶四回周期型の炭化珪素単結晶基板の表面から六方晶四回周期型の炭化珪素エピタキシャル膜を成長させるか、六方晶六回周期型の炭化珪素単結晶基板の表面から六方晶六回周期型の炭化珪素エピタキシャル膜を成長させるか、または六方晶二回周期型の炭化珪素単結晶基板の表面から六方晶二回周期型の炭化珪素エピタキシャル膜を成長させることを特徴とする請求項6に記載のバイポーラ型炭化珪素半導体素子の製造方法。
- 菱面十五回周期型の炭化珪素単結晶基板の表面から菱面十五回周期型の炭化珪素エピタキシャル膜を成長させることを特徴とする請求項1〜5のいずれかに記載のバイポーラ型炭化珪素半導体素子の製造方法。
- 前記バイポーラ型炭化珪素半導体素子を300℃以上の温度で加熱する前に、該バイポーラ型炭化珪素半導体素子の動作領域に対して、電子−正孔対の生成が可能な波長における光照射を行うことを特徴とする請求項1〜8のいずれかに記載のバイポーラ型炭化珪素半導体素子の製造方法。
- 素子形成過程にある炭化珪素半導体における素子の動作領域となる位置、または、素子形成が完了した炭化珪素半導体素子における当該素子の動作領域へ、電子−正孔対生成が可能な波長における光照射を行う工程と、
前記炭化珪素半導体または炭化珪素半導体素子を300℃以上の温度で加熱する工程と、
を含むことを特徴とする炭化珪素半導体素子の製造方法。
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JP2015179787A (ja) * | 2014-03-19 | 2015-10-08 | 株式会社東芝 | 半導体基板の製造方法、半導体基板および半導体装置 |
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JP4964672B2 (ja) * | 2007-05-23 | 2012-07-04 | 新日本製鐵株式会社 | 低抵抗率炭化珪素単結晶基板 |
JP5678622B2 (ja) * | 2010-12-03 | 2015-03-04 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
JP2014154666A (ja) * | 2013-02-07 | 2014-08-25 | Sumitomo Electric Ind Ltd | 炭化珪素半導体基板の製造方法および炭化珪素半導体装置の製造方法 |
JP5649152B1 (ja) * | 2013-04-30 | 2015-01-07 | パナソニック株式会社 | 半導体装置及びその製造方法 |
ES2641188T3 (es) | 2014-05-09 | 2017-11-08 | Reemtsma Cigarettenfabriken Gmbh | Envase para artículos relacionados con fumar y/o con tabaco |
US10283595B2 (en) | 2015-04-10 | 2019-05-07 | Panasonic Corporation | Silicon carbide semiconductor substrate used to form semiconductor epitaxial layer thereon |
WO2017061154A1 (ja) * | 2015-10-07 | 2017-04-13 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
US10526699B2 (en) * | 2017-09-08 | 2020-01-07 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device |
JP7163587B2 (ja) * | 2018-02-07 | 2022-11-01 | 富士電機株式会社 | 炭化珪素エピタキシャル基板の製造方法及び半導体装置の製造方法 |
JP7023882B2 (ja) * | 2019-02-04 | 2022-02-22 | 株式会社東芝 | 半導体装置の製造方法、基板の製造方法、半導体装置、基板、及び、基板の製造装置 |
CN114093765B (zh) * | 2022-01-18 | 2023-02-28 | 浙江大学杭州国际科创中心 | 一种提高碳化硅薄膜少子寿命的方法 |
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Cited By (2)
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JP2015179787A (ja) * | 2014-03-19 | 2015-10-08 | 株式会社東芝 | 半導体基板の製造方法、半導体基板および半導体装置 |
US10312330B2 (en) | 2014-03-19 | 2019-06-04 | Kabushiki Kaisha Toshiba | Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device |
Also Published As
Publication number | Publication date |
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EP1933386A1 (en) | 2008-06-18 |
EP1933386A4 (en) | 2010-01-27 |
WO2007032214A1 (ja) | 2007-03-22 |
JP5011493B2 (ja) | 2012-08-29 |
US8367510B2 (en) | 2013-02-05 |
US20090317983A1 (en) | 2009-12-24 |
EP1933386B1 (en) | 2012-11-07 |
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