CN1085739C - 金合金细丝及其制造方法和应用 - Google Patents

金合金细丝及其制造方法和应用 Download PDF

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Publication number
CN1085739C
CN1085739C CN98122942A CN98122942A CN1085739C CN 1085739 C CN1085739 C CN 1085739C CN 98122942 A CN98122942 A CN 98122942A CN 98122942 A CN98122942 A CN 98122942A CN 1085739 C CN1085739 C CN 1085739C
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weight
alloy
earth metal
gold
filament
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Expired - Fee Related
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CN98122942A
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CN1224767A (zh
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C·西蒙斯
G·赫尔克罗茨
L·施雷普勒
J·罗伊尔
Y·C·仇
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WC Heraus GmbH and Co KG
Heraeus Deutschland GmbH and Co KG
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WC Heraus GmbH and Co KG
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Abstract

本发明涉及一种金合金细丝，该合金含有0.5-0.9%(重量)铜和少量铂或至少一种碱土金属和稀土金属族的元素，该细丝显示出与金相近的比电阻和良好的强度/拉伸比。因而适宜作连接丝以及制造倒装晶片中的接触凸点。

Description

金合金细丝及其制造方法和应用
本发明涉及一种联接半导体元件的金合金细丝以及该细丝的制造方法和应用。
适于联接半导体元件的丝，亦称联接丝，应具有良好的电学性质和力学强度。丝的直径约为10-200微米，通常为20-60微米，可根据应用目的作相应的选择。
联接丝的组成通常为高纯金或金合金，后者的优点在于强度较高，在合金组分份额较小的情况下，其电导率与金相近。
例如，DE 16 08 161 C公布一种由金和0.001-0.1％的一种或数种稀土金属的合金，特别是和铈-混合金属或钇的合金，该合金用于制造组合开关的导线。这种金和少量稀土金属或钇的合金在加热温度达500℃时具有较好的强度特性和膨胀特性，而金的其它性质，诸如硬度，化学稳定性或电阻，基本上不受影响。
金-稀土金属-合金作联接丝在DE 32 37 385 A(US 4 885 135)，DE39 36 281 A(US 4 938 923)，JP 5-179375 A，JP 5-179376 A，JP 6-112258 A，EP 0 743 679 A和EP 0 761 831 A中亦有描述。
DE 32 37 385 A涉及一种具有高拉伸强度的金合金细丝，其金合金含0.0003-0.01％(重量)稀土金属，特别是铈，同时还含有锗、铍和/或钙。
DE 39 36 281 A描述了一种联接半导体装置的较高纯金丝，该丝是金和少量镧、铍、钙和铂族元素，特别是铂和/或钯的合金。
JP 5-179375 A和JP 5-179376 A涉及一种联接用的金合金细丝，该丝由较高纯度的金和0.0003-0.005％(重量)铝或镓，0.0003-0.003％(重量)钙和0.0003-0.003％(重量)钇、镧、铈、钕、镝和/或铍组成。
化学文摘121卷，89287m提及，JP 6-112258 A公布了一种联接丝，其组成为一种金合金，该合金含有1-30％铂和0.0001-0.05％钪、钇和/或稀土金属，亦可能含有0.0001-0.05％铍、钙、锗、镍、铁、钴和/或银。
EP 0 743 679 A亦推荐了一种含铂的金-稀土金属合金联接丝，该合金由金和少量铂(0.0001-0.005％(重量))、银、镁和铕组成，有时亦可能含有0.0001-0.02％(重量)铈。
EP 0 761 831 A描述了一种含铂和/或钯的金-稀土金属合金细丝，该合金的组成为0.1-2.2％(重量)铂和/或钯，0.0001-0.005％(重量)铍、锗、钙、镧、钇和/或铕，其余为金。该丝的制造过程是，将合金的组成元素在坩锅中熔化，将坩锅中熔化的合金从下至上冷却成铸锭，再经轧制、拉制和退火。该丝的拉伸率为3-8％，杨氏弹性模数为6.664×107kPa-8.82×107kPa(6800-9000kg f/mm2)。
EP 0 288 776 A2涉及由铝金属化的联接，其掺杂有铜，以改善硬度和强度，因此它不太适合于具有较低硬度的掺杂铍的标准金联接丝。所以推荐用一种合金联接丝联接由掺杂铜的铝形成的接触焊盘，其组成为金和0.01-1％(重量)铜，该丝的硬度与掺杂过的铝的硬度相匹配。
DE 39 90 432 C2(＝US 5 491 034 A)公布了一种含铜联接丝。该联接丝用于联接半导体元件的电极和外部接头，该丝由含至少1-＜5％(重量)的铜的金合金制成。该联接丝还可添加0.0003-0.01％(重量)的钙、锗、铍、镧和/或铟以及至少1％(重量)和最多5％(重量)的铂。联接丝的制造是将金合金在一个真空熔化炉中熔化、拉丝，然后在200-600℃下热处理(退火)。热处理按常规进行，其目的在于改善由于拉制产生的不良的变形性和延伸率。由于随改善变形性而会出现降低强度，因此要选择影响强度的合金组分的种类和数量及热处理条件，使变形性和强度两者皆满足各自的要求。联接丝的强度将随铜组分的提高而增大。
JP 01-87734 A(日本专利文摘)公布了一种细丝，它由金和含0.05-0.3％(重量)的至少一种下列元素组成：铜、铝、钇、镍、钴、钛、钨、硅、锆、钙、钯、钌、铱、铂、银、和锇。该细丝具有良好的拉伸性和很好的力学性质。
JP 08-199261 A(日本专利局-日本专利文摘)描述了一种联接丝，它由高纯金和含0.1-2％(重量)铜、0.01-0.1％(重量)钯、还可能含0.0001-0.01％(重量)锡和/或0.0001-0.01％(重量)的至少一种下列金属组成：钙、铍、锗、稀土金属、锶、钡、铟、和钛。联接丝的强度足够避免嵌入有塑料的半导体元件中相邻联接回路的接触缺陷。
在选择联接丝时，除了特殊的化学和物理性质外，在给定拉伸率下要求强度尽可能高。
因此，本发明之目的在于找出一种具有前言所述特性金合金细丝，该细丝具有尽可能好的强度/拉伸比，而且其电导性与纯金细丝的差别尽量小。此外，还要提出一种方法，使其能以经济上有利的方法连续制造细丝。该细丝应既适于作联接丝又适于制造倒装晶片技术中所谓的球状凸缘(Ball-Bumps)，例如DE 44 42 960 C中所述。
上述目的是通过一种金合金细丝来达到的，按本发明之特征在于，金合金是由0.5-0.9％(重量)铜、0.5-0.95％(重量)铂、其余为金所组成。
上述目的亦可通过一种金合金细丝来达到，按本发明其特征在于，该金合金由0.5-0.9％(重量)铜、0.0001-0.1％(重量)的至少一种选自碱土金属和稀土金属族的元素、0-1％(重量)铂、其余为金所组成。
按本发明之含义，“碱土金属”系指铍、镁、钙、钡和锶，“稀土金属”系指镧(原子序数57)和镧之后的14个元素即从铈(原子序数58)至镥(原子序数71)，在专业文献中亦称“镧系元素”。
碱土金属含量和/或稀土金属的含量宜在0.001-0.01％(重量)，如含有铂，则铂含量宜在0.1-0.9％(重量)。
碱土金属优选铍、镁、钙或至少由两种上述碱土金属的混合物组成。如由铍和钙组成混合物，则铍和钙各占50％(重量)尤为适宜。
稀土金属优选铈或由铈和一种或数种原子序数为57和59-71的稀土金属所组成的混合物，铈-混合金属尤为适宜。铈-混合金属通常系指50-60％铈、25-30％镧、10-15％钕、4-6％镨、和1％铁以及少量其它稀土金属(“吕姆普化学百科全书”(Rmpp Chemie Lexikon)，Georg Thieme VerlagStuttgart-New York，Band 1，10.Auflage(1996)，647)。
与普通联接丝直径相同的本发明的细丝，其性质能完全满足作联接丝的要求，它的突出特点在于其电导性高，电导用比电阻量度(见表VIII)，另一特点为与拉伸有关的强度非常高。(见图)。令人惊异的是，本发明所选择的合金组分铜和碱土金属和/或稀土金属的种类和数量还能使由退火带来的强度损失减小。(见表IX)。细丝很适宜的强度/拉伸比有助于获得高质量的联接。
附图表示本发明的数种细丝(例1-6)及作为比较的非本发明之细丝(例7)的强度(抗拉强度)[N/mm2]与拉伸(断裂拉伸)[％]的关系。本发明之细丝在给定拉伸下具有较高的强度。表VIII给出了例中所述的本发明的细丝及用作比较的非本发明的细丝的化学组成及其比电阻。表IX列出在拉伸硬化状态(ziehharten Zustand)和拉伸约为4％的例1-7所述之细丝的强度值，并表明添加铍，钙和铈对强度的影响。铍、钙和铈减少了退火带来的强度损失。
本发明之细丝，由于其性质适宜，特别适用于作联接丝，也可用于发展中的高频联接以及倒装晶片生产的接触凸点。
上述目的的实现还在于，本发明提出了一种制造联接半导体元件的金合金细丝的方法，其特征在于，将组成为a)0.5-0.9％(重量)铜、0.05-0.95％(重量)铂、其余为金或b)0.5-0.9％(重量)铜、0.0001-0.1％(重量)的至少一种碱土金属和稀土金属族元素、0-1％(重量)铂、其余为金，将该熔化的合金铸成条，并将条拉成直径与通用的连接丝相等的丝，以及将丝退火。
在本发明方法的一种实施方案中，将该熔化的合金铸成圆形截面的条。
在本发明方法的另一种实施方案中，将含有碱土金属铍、镁和/或钙的金合金熔化。
在本发明方法的又一种实施方案中，将含铈作为稀土金属的金合金熔化。
如果将熔化的合金铸成圆棒和将丝在300-700℃下退火，则本发明的方法特别有效。通过退火可使起始的拉伸硬化丝(ziehharte Draht)获得需要的拉伸。合金的熔化，浇铸可在空气中、保护气例如氩中或真空中进行。
本发明的方法最好熔化其中碱土金属和/或稀土金属的含量为0.001-0.01％(重量)以及如果有铂存在，则铂的含量为0.1-0.9％(重量)的金合金。
作为碱土金属，可采用铍、镁、钙、锶、钡或至少两种这些元素的混合物，特别适宜的是铍、镁、钙或至少两种这些碱土金属的混合物。如果使用由铍和钙组成的混合物，则优选是铍和钙各占50％(重量)。
作为稀土金属，宜采用铈或铈和原子序数为57和59-71中的一种或数种稀土金属组成的混合物，在这些混合物中优选市售的铈-混合金属。
本发明之方法的特点在于，它能进行连续生产，工艺产品即铸条和拉成的丝非常均匀且质量稳定。
下面用例子对本发明加以详细说明，其中例1-6为按本发明的细丝及其制造，例7作为比较例，它是根据DE 16 08 161 C所公布的为现有技术已知的细丝。这几种细丝的特性将通过其拉伸率(断裂拉伸)[％]、强度(抗拉强度)[N/mm2]和比电阻[Ohm mm2/m]表征。
例1
含0.8％(重量)铜和0.8％(重量)铂的金合金细丝。
将含0.8％(重量)铜，0.8％(重量)铂，其余为金的合金熔化体在浇铸装置中铸成圆形截面的铸条。再将铸条拉成直径为30微米的丝，对每一达到予期拉伸的丝在300-700℃的空气中退火。不同拉伸率[％]下所测得的强度值[N/mm2]列于表I。
一根直径为275微米的丝在室温下测得的比电阻为0.041Ohm mm2/m。
              表I
拉伸率[％]    强度[N/mm2]
拉伸硬化2,62,73,65,36,88,59,19,711,4     600301281263245232219209197194
例2
含0.8％(重量)铜、0.001％(重量)铍、0.001％(重量)钙和0.8％(重量)铂的金合金细丝。
将含0.8％(重量)铜、0.001％(重量)铍、0.001％(重量)钙、0.8％(重量)铂、其余为金的合金熔化体在浇铸装置中铸成圆形截面的铸条。再将铸条拉成直径为30微米的丝，对每一达到予期拉伸的丝在300-700℃的空气中退火。不同拉伸率[％]下测得的强度值[N/mm2]列于表II。
一根直径为275微米的丝在室温下测得的比电阻为0.041Ohm mm2/m。
            表II
拉伸率[％]     强度[N/mm2]
拉伸硬化3,63,84,24,44,65,97,38,710,1     585375354337318308293281267255
例3
含0.8％(重量)铜、0.001％(重量)铍、0.001％(重量)钙和0.3％(重量)铂的金合金细丝。
将含0.8％(重量)铜、0.001％(重量)铍、0.001％(重量)钙、0.3％(重量)铂、其余为金的合金熔化体在浇铸装置中铸成圆形截面的铸条，再将铸条拉成直径为30微米的丝，对每一达到予期拉伸的丝在300-700℃的空气中退火。不同拉伸率[％]下测得的强度值[N/mm2]列于表III。
一根直径为275微米的丝在室温下测得的比电阻为0.036Ohm mm2/m。
              表III
拉伸率[％]     强度[N/mm2]
拉伸硬化3,63,84,25,26,17,18,710,110,7     614367343319308294281270257246
例4
含0.9％(重量)铜、0.001％(重量)铍和0.001％(重量)钙的金合金细丝。
将含0.9％(重量)铜、0.001％(重量)铍、0.001％(重量)钙、其余为金的合金熔化体在浇铸装置中铸成圆形截面的铸条，再将铸条拉成直径为30微米的丝，对每一达到予期拉伸的丝在300-700℃的空气中退火。不同拉伸率[％]下测得的强度值[N/mm2]列于表IV。
一根直径为275微米的丝在室温下测得的比电阻为0.034Ohm mm2/m。
           表IV
拉伸率[％]     强度[N/mm2]
拉伸硬化4,44,65,36,27,910,8     673352330316298273255
例5
含0.9％(重量)铜、0.001％(重量)铍、0.001％(重量)钙和0.9％(重量)铂的金合金细丝。
将含0.9％(重量)铜、0.001％(重量)铍、0.001％(重量)钙、0.9％(重量)铂、其余为金的合金熔化体在浇铸装置中铸成圆形截面的铸条，再将铸条拉成直径为30微米的丝，对每一达到予期拉伸的丝在300-700℃的空气中退火。不同拉伸率[％]下测得的强度值[N/mm2]列于表V。
一根直径为275微米的丝在室温下测得的比电阻为0.043Ohm mm2/m。
          表V
拉伸率[％]     强度[N/mm2]
拉伸硬化4,04,24,65,26,2     648373358339323308
例6
含0.8％(重量)铜、0.01％(重量)铈的金合金细丝。
将含0.8％(重量)铜、0.01％(重量)铈、其余为金的合金熔化体在浇铸装置中铸成圆形截面的铸条，再将铸条拉成直径为30微米的丝，对每一达到予期拉伸的丝在300-700℃的空气中退火。不同拉伸率[％]下测得的强度值[N/mm2]列于表VI。
一根直径为275微米的丝在室温下测得的比电阻为0.034Ohm mm2/m。
           表VI
拉伸率[％]     强度[N/mm2]
拉伸硬化2,73.54,98,7     585328288268249
例7(对比例)
按照DE 16 08 161 C的含铈-混合金属金合金细丝。
将含金和铈-混合金属的合金熔化体在浇铸装置中铸成圆形截面的铸条。再将铸条拉成直径为30微米的丝，对每一达到予期拉伸的丝在300-700℃的空气中退火。不同拉伸率[％]下测得的强度值[N/mm2]列于表VII。
一根直径为275微米的丝在室温下测得的比电阻为0.023Ohm mm2/m。
           表VII
拉伸率[％]     强度[N/mm2]
拉伸硬化2,93,13,64,05,78,110,1     375263253243230220209198
                                          表VIII
例                          组成％(重量)     比电阻
  Au   Be   Ca   Ce   Cu   Pt
    1 其余   0,8   0,8     0,041
    2 其余 0,001  0,001   0,8   0,8     0,041
    3 其余 0,001  0,001   0,8   0,3     0,036
    4 其余 0,001  0,001   0,9     0,034
    5 其余 0,001  0,001   0,9   0,9     0,043
    6 其余   0,01   0,8     0,034
  7对比*     0,023
  8对比 100     0,023
  9对比 其余   2,0     0,048
 10对比 其余   2,0     0,043
 11对比 其余   5,0     0,073
 12对比 其余   2,0   2,0     0,068
*根据DE 16 08 161 C的金-铈-混合金属合金
                                     表IX
例                  组成％(重量)             强度
  Au   Be   Ca   Ce   Cu   Pt   拉伸硬化   4％，拉伸
    1 其余   0,8   0,8     600     260
    2 其余 0,001  0,001   0,8   0,8     585     335
    3 其余 0,001  0,001   0,8   0,3     614     330
    4 其余 0,001  0,001   0,9     673     365
    5 其余 0,001  0,001   0,9   0,9     648     373
    6 其余   0,01   0,8     585     280
 7对比*     375     230
*根据DE 16 08 161 C的金-铈-混合金属合金

Claims (15)

1.一种用于半导体元件连接的金合金细丝，其特征在于，该金合金由0.5-0.9重量％铜、0.05-0.95重量％铂、其余为金所组成，或者其特征在于，该金合金由0.5-0.9重量％铜、0.0001-0.1重量％的至少一种碱土金属和稀土金属族的元素、0-1重量％铂、其余为金所组成。
2.权利要求1的细丝，其特征在于，该金合金的碱土金属和/或稀土金属的含量为0.001-0.01重量％。
3.权利要求1或2的细丝，其特征在于，该金合金的铂含量为0.1-0.9重量％。
4.权利要求1或2的细丝，其特征在于，该碱土金属为铍、镁和/或钙。
5.权利要求1或2的细丝，其特征在于，该稀土金属为铈。
6.一种制备权利要求1-5中之一的用于半导体元件连接的金合金细丝的方法，其特征在于，将组成为a)0.5-0.9重量％铜、0.05-0.95重量％铂、其余为金或b)0.5-0.9重量％铜、0.0001-0.1重量％的至少一种碱土金属和稀土金属族的元素、0-1重量％铂、其余为金的金合金熔化，将该熔化的合金铸条，并将条拉成直径与通用的连接丝相等的丝，以及将丝退火。
7.权利要求6的方法，其特征在于，将该熔化的合金铸成圆形截面的条。
8.权利要求6或7的方法，其特征在于，将碱土金属和/或稀土金属含量为0.001-0.01重量％的金合金熔化。
9.权利要求6或7的方法，其特征在于，铂含量为0.1-0.9重量％的金合金熔化。
10.权利要求6或7的方法，其特征在于，将含有碱土金属铍、镁和/或钙的金合金熔化。
11.权利要求6或7的方法，其特征在于，将含铈作为稀土金属的金合金熔化。
12.权利要求6或7的方法，其特征在于，将该细丝在300-700℃下退火。
13.权利要求1-5的细丝作为连接丝的应用。
14.权利要求13的应用，在高频技术中作为连接丝。
15.权利要求1-5中之一的细丝在倒装晶片技术中用作半导体元件的连接的应用。
CN98122942A 1997-11-29 1998-11-27 金合金细丝及其制造方法和应用 Expired - Fee Related CN1085739C (zh)

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KR20030096985A (ko) * 2002-06-18 2003-12-31 헤라우스오리엔탈하이텍 주식회사 본딩용 금합금 세선
JP4596467B2 (ja) * 2005-06-14 2010-12-08 田中電子工業株式会社 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線
JP4726205B2 (ja) * 2005-06-14 2011-07-20 田中電子工業株式会社 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線
JP4726206B2 (ja) * 2005-06-14 2011-07-20 田中電子工業株式会社 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線
KR101451361B1 (ko) * 2012-12-04 2014-10-15 희성금속 주식회사 반도체 패키지용 동 합금 본딩 와이어
CH707537B1 (fr) 2013-02-06 2017-01-13 Rolex Sa Alliage d'or rose pour pièce d'horlogerie.
WO2018178998A1 (en) * 2017-03-27 2018-10-04 Pethe Subodh Hard gold alloy with zirconium, titanium and magnesium for jewelry manufacture
CN107974571B (zh) * 2017-11-22 2019-06-14 有研亿金新材料有限公司 一种金瓷合金丝材及其制备方法
CN108922876B (zh) * 2018-06-27 2020-05-29 汕头市骏码凯撒有限公司 一种金合金键合丝及其制造方法
CN111394606B (zh) * 2020-05-06 2021-03-16 贵研铂业股份有限公司 一种金基高阻合金、合金材料及其制备方法
CN114214538B (zh) * 2021-11-12 2022-07-26 中国科学院金属研究所 一种空间引力波探测惯性传感器用金铂合金检验质量材料及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885135A (en) * 1981-12-04 1989-12-05 Mitsubishi Kinzoku Kabushiki Kaisha Fine gold alloy wire for bonding of a semi-conductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE674933C (de) * 1934-08-17 1939-04-25 Heraeus Gmbh W C Beryllium-Gold-Legierungen
JPS63145729A (ja) * 1986-03-28 1988-06-17 Nittetsu Micro Metal:Kk 半導体素子ボンデイング用金線
JP2613224B2 (ja) * 1987-09-29 1997-05-21 田中貴金属工業株式会社 金極細線用材料
JP2745065B2 (ja) * 1988-05-02 1998-04-28 新日本製鐵株式会社 半導体素子用ボンディングワイヤ
JPH04291748A (ja) * 1991-03-20 1992-10-15 Sumitomo Electric Ind Ltd 配線基板
JP3586909B2 (ja) * 1995-01-20 2004-11-10 住友金属鉱山株式会社 ボンディングワイヤ
JP3367544B2 (ja) * 1995-08-23 2003-01-14 田中電子工業株式会社 ボンディング用金合金細線及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885135A (en) * 1981-12-04 1989-12-05 Mitsubishi Kinzoku Kabushiki Kaisha Fine gold alloy wire for bonding of a semi-conductor device

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