CN110699570B - 一种高成球性的键合银丝材料及其制备方法 - Google Patents
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 239000000463 material Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000002844 melting Methods 0.000 claims abstract description 34
- 230000008018 melting Effects 0.000 claims abstract description 34
- 229910052709 silver Inorganic materials 0.000 claims abstract description 33
- 239000004332 silver Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 15
- 229910052737 gold Inorganic materials 0.000 claims abstract description 14
- 239000010931 gold Substances 0.000 claims abstract description 14
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 9
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 8
- 239000010941 cobalt Substances 0.000 claims abstract description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 7
- 239000011575 calcium Substances 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 7
- 239000011573 trace mineral Substances 0.000 claims abstract description 7
- 235000013619 trace mineral Nutrition 0.000 claims abstract description 7
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 4
- 239000011669 selenium Substances 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 9
- -1 silver nickel calcium Chemical compound 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 238000009749 continuous casting Methods 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000001291 vacuum drying Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000003064 anti-oxidating effect Effects 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 5
- 239000003575 carbonaceous material Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 238000007873 sieving Methods 0.000 claims description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- JEZHBSJTXKKFMV-UHFFFAOYSA-N calcium nickel Chemical compound [Ca].[Ni] JEZHBSJTXKKFMV-UHFFFAOYSA-N 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000003786 synthesis reaction Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000002194 synthesizing effect Effects 0.000 abstract description 4
- 238000003723 Smelting Methods 0.000 description 7
- 238000011161 development Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Abstract
本发明属于键合丝材料的技术领域,涉及一种高成球性的键合银丝材料及其制备方法,该材料的组成成分包括银99%±0.2%、镍0.4%±0.04%、钴0.4%±0.05%、钙0.01%±0.001%、铜0.01%±0.001%、金0.03%±0.004%、钯0.03%±0.004%、镧0.01%±0.001%以及铅0.0025%±0.0005%,还包括其它微量元素包括铟、铈、钇、硒中的一种或以上。本发明键合银丝材料的制备方法,通过分步使得各个金属成分分开熔融合成,提高键合银丝材料合成过程中各成分晶粒的充分吻合,改善合成的键合银丝的成球性,以此提高合金丝材料的化学稳定性和机械性能等。
Description
技术领域
本发明属于键合丝材料的技术领域,具体涉及一种高成球性的键合银丝材料及其制备方法。
背景技术
近年来,半导体的发展越来越受到关注,其发展也越来越迅速,集成电路的集成化需求越来越高,因此对键合金丝材料的化学性能和机械性能的要求也很高,一般情况下,键合金丝需要具有较高的电导率、优异的化学稳定性以及可塑性,还必须具有规定的抗拉强度和伸长率,理想的键合金丝材料一般具备以下特点:键合金丝能够与焊盘外引线材料实现良好的键合;键合过程具有较小的键合温度、键合力和键合时间;化学性能稳定,不形成有害的金属间化合物;可塑性好,易成丝及卷绕;尺寸精度高等。
键合银丝由于具有优良的化学稳定性而广泛应用于集成电路(IC)封装行业及LED行业,但经过几十年的研究,键合银丝的开发已趋于极限,封装行业不断寻求新的性能优异且价格低廉的键合银丝材料。
目前对键合丝材料的研究进展中,键合铜丝产品的发展比较好,虽然键合铜丝产品的价格有优势,但其存在抗氧化性能差且机械性能不够优异等问题,会影响使用元件的稳定性和工作效率,增加了生产成本和使用成本,硬度大会造成芯片的损坏,影响成品率。
金属银具有导电性能优异的特点,其电阻率为1.586μΩ·cm在所有金属中最小,还具有比较好的散热性能,但是纯银在大气中容易氧化,熔化成球时,球的表面不光滑导致其使用寿命不长,且纯银的机械性能比较差,延展性较差等问题。
发明内容
针对以上问题,为了使得金属银更好地用于合成键合银丝材料,充分发挥金属银的优势,本发明欲在减少金的使用量,通过添加其它稀有金属物质合成性能优异、成本价格低的高成球性的键合银丝材料,本发明的目的在于提供一种高成球性的键合银丝材料及其制备方法。
本发明的技术内容如下:
一种高成球性的键合银丝材料,该材料的组成成分包括银99%±0.2%、镍0.4%±0.04%、钴0.4%±0.05%、钙0.01%±0.001%、铜0.01%±0.001%、金0.03%±0.004%、钯0.03%±0.004%、镧0.01%±0.001%以及铅0.0025%±0.0005%;
还包括其它微量元素0.001%±0.0001%,微量元素包括铟、铈、钇、硒中的一种或以上。
其中,各组成成分的粒径为10~15μm;各组成分的纯度大于99%。
本发明还提供了一种高成球性的键合银丝材料的制备方法,包括如下步骤:
1)预处理:分别将各个金属物质磨成粉过筛,之后预热至50~60℃进行真空干燥,同时采用还原碳材料给金属物质进行除氧处理;
2)制备银镍钙熔融物:取金属银、镍和钙混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至780~810℃并维持10~30分钟,再升温至900~950℃并维持10~50分钟,再升温至1300~1400℃并维持20~60分钟,整个过程的升温速度为110~350℃/h,熔解完成即得到银镍钙熔融物;
3)制备银钯镧熔融物:取金属银、钯和镧混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至890~910℃并维持10~30分钟,再升温至940~960℃并维持10~50分钟,再升温至1500~1550℃并维持20~60分钟,整个过程的升温速度为90~400℃/h,熔解完成即得到银钯镧熔融物;
4)连铸键合棒材料:取金属钴、铜、金、铅、其他微量元素、剩余的银以及银镍钙熔融物和银钯镧熔融物混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至1030~1100℃并维持15~30分钟,再升温至1480~1510℃并维持20~50分钟,整个过程的升温速度为90~400℃/h,熔融之后进行连铸的速度25~50mm/min,形成键合棒材料;
5)拉丝:将键合棒材料进行拉拔制得细丝,每道次平均变形量为10~15%,形成预定线径的合金线材料;
6)退火:细丝在570~620℃温度条件下退火3~6小时,退火处理可消除合金丝冷加工应力,优化了合金晶粒尺寸,进一步提高合金丝的综合性能,退火之后的合金丝表面涂覆混合醇进行防氧化处理,之后进行真空干燥即得键合银丝;
其中,步骤1)所述的还原碳材料包括一氧化碳以及活性炭,能够实现合成过程中的除氧处理;
步骤2)至步骤4)所述坩埚为氮化硅坩埚或者碳化硅坩埚,氮化硅或者碳化硅材质的坩埚能够促进合金材料的熔融结合,提高键合性,还能够进一步达到防氧化的效果;
所述真空熔炼的真空压力条件为10-2~10-4Pa,采用真空能够降低金属材料的熔点,减少成本,也是进一步达到合成过程中的材料的防氧化;
所述步骤2)至步骤6)的操作均置于氢氮气环境中进行,所述氢氮气为氢气和氮气的混合气体,氢气的含量大于3.5%且小于5%,形成效果较好的防氧化保护;
步骤5)所述拉丝包括粗拉、中拉、细拉和微细拉,粗拉的目标直径为1~2mm,中拉的目标直径为0.5~0.8mm,细拉的目标直径为0.06~0.07mm,微细拉的目标直径为0.01~0.05mm。
本发明的有益效果如下:
本发明的高成球性的键合银丝材料,相比现有技术,采用较高的银含量以及较低的金含量,并加入了不同比例的镍、钴、钯等稀有金属合成制得,不仅成本价格低、还具有比较优异的延伸率和断裂负荷,满足其应用需求,金属镍和钯的加入提高了材料的抗氧化性、耐腐蚀性以及抗变色性,金属镧的加入提高了合金丝材料的键合性能、可焊接性、金属铅增加了合成过程中的晶粒流动性,使得球形更圆润,相比现有技术,各个金属物质的合成提高了本发明的键合银丝成球性,同时不降低合金丝材料的电学性能;
本发明的高成球性的键合银丝材料的制备方法,主要通过分步使得各个金属成分分开熔融合成,使得金属晶粒能够充分分布均匀,提高键合银丝材料合成过程中各成分晶粒的充分吻合,以此提高合金丝材料的化学稳定性和机械性能等,合成的键合银丝材料具有优异的成球性,球体表面光滑无杂质、无纹路,所采用的的原料成本价格低且能够制得性能优异的高成球性的键合银丝材料,能够适于工业化生产且能满足应用于IC集成电路、半导体分立器件、LED等高端电路产品的性能需求。
附图说明
图1为本发明的键合银丝的SEM扫描图;
图2为银金键合材料的SEM扫描图。
具体实施方式
以下通过具体的实施案例以及附图说明对本发明作进一步详细的描述,应理解这些实施例仅用于说明本发明而不用于限制本发明的保护范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定。
若无特殊说明,本发明的所有原料和试剂均为常规市场的原料、试剂。
实施例1
一种高成球性的键合银丝材料的制备方法:
1)预处理:分别将各个金属物质磨成粉过筛,之后预热至50~60℃进行真空干燥,同时采用一氧化碳给金属物质进行除氧处理;
2)制备银镍钙熔融物:取金属银20%±0.2%、镍0.4%±0.04%和钙0.01%±0.001%混合放入氮化硅坩埚中,采用真空熔炼,真空压力为10-2~10-4Pa,一开始的熔炼温度升至780~810℃并维持10~30分钟,再升温至900~950℃并维持10~50分钟,再升温至1300~1400℃并维持20~60分钟,整个过程的升温速度为110~350℃/h,熔解完成即得到银镍钙熔融物;
3)制备银钯镧熔融物:取金属银20%±0.2%、钯0.03%±0.004%和镧0.01%±0.001%混合放入氮化硅坩埚中,采用真空熔炼,真空压力为10-2~10-4Pa,一开始的熔炼温度升至890~910℃并维持10~30分钟,再升温至940~960℃并维持10~50分钟,再升温至1500~1550℃并维持20~60分钟,整个过程的升温速度为90~400℃/h,熔解完成即得到银钯镧熔融物;
4)连铸键合棒材料:取金属钴0.4%±0.05%、铜0.01%±0.001%、金0.03%±0.004%、铅0.0025%±0.0005%、铟和/或铈0.001±0.0001%、剩余的银59%±0.2%以及银镍钙熔融物和银钯镧熔融物混合放入氮化硅坩埚中,采用真空熔炼,真空压力为10-2~10-4Pa,一开始的熔炼温度升至1030~1100℃并维持15~30分钟,再升温至1480~1510℃并维持20~60分钟,整个过程的升温速度为90~400℃/h,熔融之后进行连铸的速度25~50mm/min,形成键合棒材料;
5)拉丝:将键合棒材料进行拉拔制得细丝,每道次平均变形量为10~15%,形成预定线径的合金线材料;
6)退火:细丝在570~620℃温度条件下退火3~6小时,退火之后的合金丝表面涂覆混合醇进行防氧化处理,之后进行真空干燥即得键合银丝。
所述步骤2)至步骤6)的操作均置于氢氮气环境中进行,所述氢氮气为氢气和氮气的混合气体,氢气的含量大于3.5%且小于5%;
步骤5)所述拉丝包括粗拉、中拉、细拉和微细拉,粗拉的目标直径为1~2mm,中拉的目标直径为0.5~0.8mm,细拉的目标直径为0.06~0.07mm,微细拉的目标直径为0.01~0.05mm。
实施例2
一种高成球性的键合银丝材料的制备方法:
1)预处理:分别将各个金属物质磨成粉过筛,之后预热至50~60℃进行真空干燥,同时采用活性炭给金属物质进行除氧处理;
2)制备银镍钙熔融物:取金属银20%±0.2%、镍0.4%±0.04%和钙0.01%±0.001%混合放入碳化硅坩埚中,采用真空熔炼,真空压力为10-2~10-4Pa,一开始的熔炼温度升至780~810℃并维持10~30分钟,再升温至900~950℃并维持10~50分钟,再升温至1300~1400℃并维持20~60分钟,整个过程的升温速度为110~350℃/h,熔解完成即得到银镍钙熔融物;
3)制备银钯镧熔融物:取金属银20%±0.2%、钯0.03%±0.004%和镧0.01%±0.001%混合放入碳化硅坩埚中,采用真空熔炼,真空压力为10-2~10-4Pa,一开始的熔炼温度升至890~910℃并维持10~30分钟,再升温至940~960℃并维持10~50分钟,再升温至1500~1550℃并维持20~60分钟,整个过程的升温速度为90~400℃/h,熔解完成即得到银钯镧熔融物;
4)连铸键合棒材料:取金属钴0.4%±0.05%、铜0.01%±0.001%、金0.03%±0.004%、铅0.0025%±0.0005%、钇和/或硒0.001±0.0001%、剩余的银59%±0.2%以及银镍钙熔融物和银钯镧熔融物混合放入碳化硅坩埚中,采用真空熔炼,真空压力为10-2~10-4Pa,一开始的熔炼温度升至1030~1100℃并维持15~30分钟,再升温至1480~1510℃并维持20~60分钟,整个过程的升温速度为90~400℃/h,熔融之后进行连铸的速度25~50mm/min,形成键合棒材料;
5)拉丝:将键合棒材料进行拉拔制得细丝,每道次平均变形量为10~15%,形成预定线径的合金线材料;
6)退火:细丝在570~620℃温度条件下退火3~6小时,退火之后的合金丝表面涂覆混合醇进行防氧化处理,之后进行真空干燥即得键合银丝。
所述步骤2)至步骤6)的操作均置于氢氮气环境中进行,所述氢氮气为氢气和氮气的混合气体,氢气的含量大于3.5%且小于5%;
步骤5)所述拉丝包括粗拉、中拉和细拉,粗拉的目标直径为1~2mm,中拉的目标直径为0.5~0.8mm,细拉的目标直径为0.06~0.07mm,微细拉的目标直径为0.01~0.05mm。
键合银丝材料的性能检测:
选取实施例1中的不同粗细的键合银丝做延伸率计算以及断裂负荷测定,结果如表一:
表一
选取实施例2中的不同粗细的键合银丝做延伸率计算以及断裂负荷测定,结果如表二:
表二
选取本发明实施例中的键合银丝做SEM电镜扫描图,如图1所示,本实施例中制备得到的键合银丝的成球性比较优异,球面光滑无痕,可见其会有较为优异的导电性能以及键合性能,而图2为纯银和纯金制得的键合银丝,可见其成球性较差。
Claims (5)
1.一种高成球性的的键合银丝材料的制备方法,其特征在于,所述键合银丝材料的组成成分包括银99%±0.2%、镍0.4%±0.04%、钴0.4%±0.05%、钙0.01%±0.001%、铜0.01%±0.001%、金0.03%±0.004%、钯0.03%±0.004%、镧0.01%±0.001%以及铅0.0025%±0.0005%;该材料的组成成分还包括其它微量元素0.001%±0.0001%,微量元素包括铟、铈、钇、硒中的一种或以上;
包括如下步骤:
1)预处理:分别将各个金属物质磨成粉过筛,之后预热至50~60℃进行真空干燥,同时采用还原碳材料给金属物质进行除氧处理;
2)制备银镍钙熔融物:取金属银、镍和钙混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至780~810℃并维持10~30分钟,再升温至900~950℃并维持10~50分钟,再升温至1300~1400℃并维持20~60分钟,整个过程的升温速度为110~350℃/h,熔解完成即得到银镍钙熔融物;
3)制备银钯镧熔融物:取金属银、钯和镧混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至890~910℃并维持10~30分钟,再升温至940~960℃并维持10~50分钟,再升温至1500~1550℃并维持20~60分钟,整个过程的升温速度为90~400℃/h,熔解完成即得到银钯镧熔融物;
4)连铸键合棒材料:取金属钴、铜、金、铅、其它微量元素、剩余的银以及银镍钙熔融物和银钯镧熔融物混合放入坩埚中,采用真空熔炼,一开始的熔炼温度升至1030~1100℃并维持15~30分钟,再升温至1480~1510℃并维持20~50分钟,整个过程的升温速度为90~400℃/h,熔融之后进行连铸的速度25~50 mm/min,形成键合棒材料;
5)拉丝:将键合棒材料进行拉拔制得细丝,每道次平均变形量为10~15%,形成预定线径的合金线材料;
6)退火:细丝在570~620℃温度条件下退火3~6小时,退火之后的合金丝表面涂覆混合醇进行防氧化处理,之后进行真空干燥即得键合银丝;
步骤1)所述的还原碳材料包括一氧化碳以及活性炭;
所述真空熔炼的真空压力条件为10-2~10-4 Pa;
所述步骤2)至步骤6)的操作均置于氢氮气环境中进行,所述氢氮气为氢气和氮气的混合气体,氢气的含量大于3.5%且小于5%。
2.由权利要求1所述的键合银丝材料的制备方法,其特征在于,步骤2)至步骤4)所述坩埚为氮化硅坩埚或者碳化硅坩埚。
3.由权利要求1所述的键合银丝材料的制备方法,其特征在于,步骤5)所述拉丝包括粗拉、中拉、细拉和微细拉,粗拉的目标直径为1~2 mm,中拉的目标直径为0.5~0.8 mm,细拉的目标直径为0.06~0.07 mm,微细拉的目标直径为0.01~0.05 mm。
4.由权利要求1所述的键合银丝材料的制备方法,其特征在于,所述键合银丝材料的各组成成分的粒径为10~15μm。
5.由权利要求1所述的键合银丝材料的制备方法,其特征在于,所述键合银丝材料的各组成成分的纯度大于99%。
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