CN108511511B - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN108511511B CN108511511B CN201710684537.8A CN201710684537A CN108511511B CN 108511511 B CN108511511 B CN 108511511B CN 201710684537 A CN201710684537 A CN 201710684537A CN 108511511 B CN108511511 B CN 108511511B
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
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- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Abstract
Description
Claims (25)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110651130.1A CN113380815B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
CN202110646626.XA CN113380814B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
CN202110651129.9A CN113394225B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017036973A JP2018142654A (ja) | 2017-02-28 | 2017-02-28 | 半導体装置及びその製造方法 |
JP2017-036973 | 2017-02-28 |
Related Child Applications (3)
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CN202110651129.9A Division CN113394225B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
CN202110646626.XA Division CN113380814B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
CN202110651130.1A Division CN113380815B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
Publications (2)
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CN108511511A CN108511511A (zh) | 2018-09-07 |
CN108511511B true CN108511511B (zh) | 2021-06-29 |
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CN202110651129.9A Active CN113394225B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
CN202110651130.1A Active CN113380815B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
CN202110646626.XA Active CN113380814B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
CN201710684537.8A Active CN108511511B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置及其制造方法 |
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CN202110651129.9A Active CN113394225B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
CN202110651130.1A Active CN113380815B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
CN202110646626.XA Active CN113380814B (zh) | 2017-02-28 | 2017-08-11 | 半导体装置 |
Country Status (3)
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JP (1) | JP2018142654A (zh) |
CN (4) | CN113394225B (zh) |
TW (1) | TWI663714B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2020043189A (ja) * | 2018-09-10 | 2020-03-19 | キオクシア株式会社 | 半導体記憶装置 |
CN111276486B (zh) | 2018-12-07 | 2021-03-12 | 长江存储科技有限责任公司 | 新型3d nand存储器件及其形成方法 |
EP3853902B1 (en) * | 2019-01-08 | 2024-03-06 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory device and manufacturing method thereof |
JP2020141008A (ja) | 2019-02-27 | 2020-09-03 | キオクシア株式会社 | 半導体記憶装置及びその製造方法 |
JP2020150199A (ja) | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
US10985252B2 (en) * | 2019-08-26 | 2021-04-20 | Micron Technology, Inc. | Integrated assemblies, and methods of forming integrated assemblies |
JP2021136346A (ja) * | 2020-02-27 | 2021-09-13 | キオクシア株式会社 | 半導体記憶装置およびその製造方法 |
JP2021136412A (ja) * | 2020-02-28 | 2021-09-13 | キオクシア株式会社 | 半導体記憶装置およびその製造方法 |
JP2021145053A (ja) | 2020-03-12 | 2021-09-24 | キオクシア株式会社 | 半導体記憶装置 |
CN111370413B (zh) * | 2020-03-19 | 2022-11-04 | 长江存储科技有限责任公司 | 三维存储器的制备方法及三维存储器 |
CN116034637A (zh) * | 2020-10-26 | 2023-04-28 | 铠侠股份有限公司 | 半导体存储装置以及半导体存储装置的制造方法 |
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- 2017-07-19 TW TW106124066A patent/TWI663714B/zh active
- 2017-08-11 CN CN202110651129.9A patent/CN113394225B/zh active Active
- 2017-08-11 CN CN202110651130.1A patent/CN113380815B/zh active Active
- 2017-08-11 CN CN202110646626.XA patent/CN113380814B/zh active Active
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Also Published As
Publication number | Publication date |
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TWI663714B (zh) | 2019-06-21 |
CN113380815B (zh) | 2024-04-16 |
CN108511511A (zh) | 2018-09-07 |
CN113380815A (zh) | 2021-09-10 |
CN113380814A (zh) | 2021-09-10 |
JP2018142654A (ja) | 2018-09-13 |
TW201834218A (zh) | 2018-09-16 |
CN113394225B (zh) | 2023-11-21 |
CN113380814B (zh) | 2024-04-12 |
CN113394225A (zh) | 2021-09-14 |
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