CN1084870A - 用辐照部分脱粘的自粘带 - Google Patents

用辐照部分脱粘的自粘带 Download PDF

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CN1084870A
CN1084870A CN93117373A CN93117373A CN1084870A CN 1084870 A CN1084870 A CN 1084870A CN 93117373 A CN93117373 A CN 93117373A CN 93117373 A CN93117373 A CN 93117373A CN 1084870 A CN1084870 A CN 1084870A
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adhesive tape
irradiation
wafer
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曼弗瑞德·斯皮斯
克里斯汀·哈德
冈特·古兹
克劳蒂亚·费尔特
罗伯特·梅亚
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Beiersdorf AG
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Abstract

本发明涉及一种用辐照可交链的自粘带(切割粘 带)，用其来固定晶片，用可透过辐照的薄膜和辐照交 链的粘结物作基材，其特征在于聚合的自粘物中含有 辐照引发剂。

Description

本发明涉及一种通过辐照部分脱粘的自粘带，也就是涉及一种应用于对晶片进行临时固定和加工的所谓的切割粘带。
在芯片的加工中，在把各电子元件和接线制作在晶片上以前，首先应使得晶片非常平整，这个工作可通过对晶片进行打磨来实现，这时，就需要一种切割粘带对晶片进行固定和保护。在此基础上，按一定的工艺（主要涉及照相制版工艺）对预先准备好的晶片进行处理，使电子元件和接线交叉。然后将预处理的晶片锯开，以得到芯片。在锯断工艺中也应将晶片固定，一般说来，每一种切割粘带均要求一定的初始粘结力，而锯断后粘结力应降低，从而得到单个的芯片。对于小的芯片可在背后剌孔钉销，然后用冲头取出。对于大的芯片，由于可能产生芯片的折断现象，因此不宜用此工艺。这里有必要采用一种切割粘带，但锯断后必须使粘结力降低到一定的数值，这样在工艺中可省去剌孔销钉的工序。
这种切割粘带是公知的，在欧洲专利局的专利申请公开说明书EP-OS  157508中描述了一种在半导体芯片加工中使用的薄自粘带，在这种薄自粘带的粘结剂中混有光敏剂。这种粘结带经延展和紫外辐照后其与晶片的粘结力将降低，以使得能用合适的工具或吸盘将晶片从粘结带上取下。
从欧洲专利申请公开说明书EP-OS  298448中也公开了一种经辐照交链的自粘结带，在粘结物中使用了氰尿盐和异氰尿盐未达到改善紫外辐照交链和达到降低粘结力的目的。
德国专利DE-PS  2743979也公开了一种使用了交链聚丙烯酸酯粘结物的自粘结带，在其粘结物中含有光引发剂，使粘结物涂到粘结带基带上后按预定的方式通过紫外辐照交链，在宽纲状态下防止如典型的自粘结物那样进行再交键，而形成稳定的结合键（第23-28页，第二栏）。
利用现有技术加工晶片的产品存在严重的缺陷。
因为用于电子领域的半导体，要求原材料晶片的纯度非常的高，为了满足这种特殊要求，不仅应从机械处理上，而且要从化学处理上给以极大的注意。应防止或绝对禁止与接触的异物中有低分子物或其他可能运移的组分进入晶片上或晶片中。这样的异物有可能限制其应用甚至使这种应用成为不可能。此外尚需考虑操作时粘合物有无毒性，因为要在此高度专业化的工作岗位上，每天要长时间的与这类物质接触。
对于上述提及的使用要求，从德国专利说明书DE-PS  2743979中见不到有任何的启示，因在那里只给出了预见的辐照提供典型的粘结物。而在这里则要求得到一个用上述的典型的自粘带所不能相比较的通过辐照使粘结力大大降低的性能。按该专利说明书的方法，通过辐照不会使自粘物的粘性降低，当其达到一定的交链极值后，再延长辐照也不会超过此值，其粘性几乎保持不变。
正如在权利要求书中将要详细地描述的，本发明的上述任务是通过用切割粘带的方法得解决的。
使专业人员惊讶的是采用本发明能使晶片的加工方法完善，由于自粘物中光敏剂的共价结构，在共聚反应中形成一种均匀的产品，从而得到本发明的切割粘带，这样也能使导致粘结力降低的所希望的交键作用更为均匀和有效。这一点也适用于透明的薄辐照膜。此外，也可采用不同的单体组合以及选择不同的辐照强度和时间未有目的地调整交键前后的粘结力的剖面图。由结晶形和非结晶形聚合体在共聚物中的预定的结构可以很有利地确定粘结力的剖面图。采用长键的丙烯酸酯，例如硬酯酸丙烯酸酯有特殊的优越性，因其侧链结晶性对粘性大有裨益。如在其中再补加具有反应活性的和有毒性的低分子化合物不仅没有必要，而且为了保持晶片的纯度，也要避免这种做法。
可用一般的含囟素的薄膜，如PVC;也可用不含囟素的薄膜做基带材料;从生态学观点看后者较优。可用单层的，也可用双层的薄膜做基带，但是以单层为主。由于UV-引发剂有选择性，没有必要在薄膜系统中再用紫外滤光器。
也可考虑用可透过辐照的，尤其是可透过UV-光的薄膜作为基带材料;既可为均聚体，也可为共聚体，例如聚乙烯，聚丙烯，聚氯乙烯。聚酯或乙烯酸酯乙烯共聚体;主要为高弹性体膜，如软PVC，和聚丁烯，或者为1，2-聚丁二烯或乙基-丁基丙烯酸酯共聚体做为不含囟素的基带。某些软PVC和乙基-丁基丙烯酸酯-共聚体作基带的优点是，可实现X和Z方向上延伸率均匀地达到800%，膜厚为5到400微米，主要为20至80微米。以乙基丁基丙烯酸酯共聚体为基带材料，用聚丙烯酸酯为粘结物证明也是特别好的粘结材料。
所有商业的引发剂系统均可用於此聚合反应中，特别是含有自由基的引发剂，如过氧化物，叠氮化合物和碳酸氢盐，例如过氧化苯甲酰，二叔丁基过氧化物，二戊基过氧化物，叠氮二异丁腈，2  2′-叠氮双（2-甲基丁腈），二（4-叔丁基环己基）-过氧化二碳酸盐，二醋酸过氧化二碳酸盐，尤以二过苯甲酰为主要的。
可以单独地使用这些化合物，也可使用含这些化合物的混合物。
取下切割粘带上已锯好的芯片前，应进行辐照交键，特别是用紫外辐照以降低粘结力。已采用的紫外增敏剂都是由可聚合的单元与对紫外敏感的基团结合而形成的化合物。例如，2-丙烯酸（2-氧化-1，2-二苯基-乙基）酯，（苯甲酰丙烯酸酯）和4-（2-丙烯酰氧乙基）-苯基-（2-羟基-2-丙基）酮，而尤以苯甲酸丙烯酸酯为最好。这种光敏剂的加入量为0.1-5%（重量），尤以1-3%（重量）为主。
可单独地加入这些化合物，也可以加入它们的混合物。
用于粘合剂系统合成的适宜的单体为丙烯酸和属于
H2C＝CR1-CO-OR2类型的丙烯酸酯，其中：
R1＝H1-CH3， R2＝C1-C24，
其在酯单元中，乙基二乙二醇中，4-叔丁基环己基中，2-羟基乙基中，羟基丙基中，羟基丁基中，二甲基氨基乙基中，特别是正-丁基至硬酸基中，具有线性的和无侧链的碳键。
以甲基丙烯酸和甲基丙烯酸酯为基础的相应的变体也同样适用。
也可用醋酸乙烯和属于H2＝CH-O-R类型的乙烯基烷基醚类，
其中：R为甲基，乙基，丙基，异丁基，十八（烷）基，环己基，4-羟基丁基，都可采用。
同样也可采用乙烯基吡咯烷酮，乙烯基己内酰胺，乙烯基咔唑以及1-2烯基咪唑。
实例：
聚合物的制备
将192克2-乙基己基丙烯酸酯，200克硬酯酸丙烯酸酯，8克苯甲酰丙烯酸酯和226克丙酮加到一个2升的玻璃或钢制的聚合反应器中，反应器带有搅拌器，回流冷凝器，温度计和进气口。溶液首先在搅拌下（约120转/分），通入氮气将反应器中的氧气冲洗置换完毕，然后加热至沸腾。
在分批加入占总重量0.4%（重量）的过氧化苯甲酰后发生聚合反应，反应约经20小时。按粘度情况多次加入溶剂（汽油60/95）进行稀释使聚合后的聚合物溶液中含固态成份为30-60%。
吸收率：[%]  99.4
K-值：[]  83.1
涂层
对上述聚合物溶液继续使用如下：
基带：EBA-薄膜，70微米厚
第一道工序：
用1.85KW，以10米/分（相当于约38mN/m）的速度将胶带一侧进行电晕预处理，以改善粘合物的固定性。
第二道工序：
经电晕处理后，尽可能快地在预处理侧进行涂复（速度1米/分，涂复物重量约为10-15克/米2，分六个区进行干燥：60/70/70/80/80/90C）。用隔离薄膜/隔离纸将涂复胶带复盖。
第三道工序：
用ES-辐照制备好的胶带（170KV，4-5米/分的速度，达到剂量约为10kGy），以改善薄膜性能和粘合物的附着性。
产品性能
由上法制成切割带在硅晶片上的初始粘结力显示为1.1N/cm。
紫外辐照后（静态：30  sec  HANAU  Q  1200）样品的粘结力降低到0.15N/cm）。
可用商业上惯用的紫外辐照源进行辐照。用通常的延伸法处理粘结晶片和用上述紫外辐照后，可实现无损伤，无问题地取下晶片。
检验方法
K-值：
用通常的毛细管粘度计测定K-值（用UBBELOHDE-粘度计）。测试是在1克聚合物/100毫升甲苯的溶液和25℃下进行的。
粘结力：
将未辐照的试验条（宽20mm）粘在晶片表面（未抛光面）的粗糙面上，粘结中要求无空气泡，用手小心挤压。粘合后用电动拉力机在一分钟内测定（拉力角：180°，拉力速度：300米/分）。

Claims (9)

1、一种用于临时固定晶片的能藉助于辐照部分去粘的自粘带，由一种可通过辐照的薄膜和一种辐照-交链的自粘物作为基带，
其特征在于：
聚合的自粘物含有共聚的辐照敏感剂。
2、根据权利要求1的自粘带，其特征在于：
辐照为紫外辐照，其中，基带薄膜是可透过紫外辐照的，自粘物是通过紫外交链的，共聚的敏感剂是紫外敏感剂。
3、根据权利要求2的自粘带，其特征在于，
所说的共聚敏感剂是苯甲酰丙烯酸酯。
4、根据权利要求1的自粘带，其特征在于，基带薄膜的材质是软PVC，聚丁烯，1，2聚丁二烯或乙基丁基丙烯酸酯的共聚物。
5、根据权利要求1的自粘带，其特征在于，
基带的两个方向都是可延伸的，薄膜的厚度为5-400微米，主要为20-80微米。
6、根据权利要求1的自粘带，其特征在于，
基带薄膜是乙基丁基丙烯酸酯共聚物，其自粘物是一种聚丙烯酸酯共聚物。
7、根据权利要求1的自粘带，其特征在于，
自粘物为一种带侧链的结晶性的聚丙烯酸酯共聚物。
8、根据权利要求1至7之一的自粘带的应用，其特征在于，
所说的自粘带应用于晶片的临时固定。
9、根据权利要求8的自粘带的应用，其特征在于，晶片可重新取下，其方法是将自粘带中基带进行辐照，使自粘物交链从而使粘结力下降，再用吸盘或相似的设备取下晶片。
CN93117373A 1992-09-15 1993-09-13 用辐照部分脱粘的自粘带 Pending CN1084870A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4230784A DE4230784A1 (de) 1992-09-15 1992-09-15 Durch Strahlung partiell entklebendes Selbstklebeband (Dicing Tape)
DEP4230784.8 1992-09-15

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CN1084870A true CN1084870A (zh) 1994-04-06

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EP (1) EP0588180B1 (zh)
JP (1) JPH06218879A (zh)
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CN (1) CN1084870A (zh)
AT (1) ATE135033T1 (zh)
DE (2) DE4230784A1 (zh)
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ATE135033T1 (de) 1996-03-15
JPH06218879A (ja) 1994-08-09
DE4230784A1 (de) 1994-03-17
EP0588180B1 (de) 1996-03-06
DE59301780D1 (de) 1996-04-11
SG43295A1 (en) 1997-10-17
ES2085085T3 (es) 1996-05-16
US5525422A (en) 1996-06-11
EP0588180A1 (de) 1994-03-23
KR940007150A (ko) 1994-04-26

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